Triggered Single-photon Emission Research Articles

Correlation Measurements for Carbon Nanotubes with Quantum Defects.

Single-photon sources are essential building blocks for the development of photonic quantum technology. Regarding potential practical application, an on-demand electrically driven quantum-light emitter on a chip is notably crucial for photonic integrated circuits. Here, we propose functionalized single-walled carbon nanotube field-effect transistors as a promising solid-state quantum-light source by demonstrating photon antibunching behavior via electrical excitation. The sp3 quantum defects were formed on the surface of (7, 5) carbon nanotubes by 3,5-dichlorophenyl functionalization, and individual carbon nanotubes were wired to graphene electrode pairs. Filtered electroluminescent defect-state emission at 77 K was coupled into a Hanbury Brown and Twiss experiment setup, and single-photon emission was observed by performing second-order correlation function measurements. We discuss the dependence of the intensity correlation measurement on electrical power and emission wavelength, highlighting the challenges of performing such measurements while simultaneously analyzing acquired data. Our results indicate a route toward room-temperature electrically triggered single-photon emission.

A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 μm with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton–exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g(2)(0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot.

We report on the experimental demonstration of triggered single-photon emission at the telecom O-band from In(Ga)As/GaAs quantum dots (QDs) grown by metal-organic vapor-phase epitaxy. Micro-photoluminescence excitation experiments allowed us to identify the p-shell excitonic states in agreement with high excitation photoluminescence on the ensemble of QDs. Hereby we drive an O-band-emitting GaAs-based QD into the p-shell states to get a triggered single photon source of high purity. Applying pulsed p-shell resonant excitation results in strong suppression of multiphoton events evidenced by the as measured value of the second-order correlation function at zero delay of 0.03 (and ~0.005 after background correction).

Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<107 cm−2). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g(2)(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.

Single Photons on Demand from Novel Site-Controlled GaAsN/GaAsN:H Quantum Dots

We demonstrate triggered single-photon emission from a novel system of site-controlled quantum dots (QDs), fabricated by exploiting the hydrogen-assisted, spatially selective passivation of N atoms in dilute nitride semiconductors. Evidence of this nonclassical behavior is provided by the observation of strong antibunching in the autocorrelation histogram of the QD exciton emission line. This class of site-controlled quantum emitters can be exploited for the fabrication of new hybrid QD-nanocavity systems of interest for future quantum technologies.

High temperature single photon emitter monolithically integrated on silicon

We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations.

Electrically Driven Quantum Dot Micropillar Light Sources

We report on light sources based on electrically pumped quantum dot (QD) micropillar cavities. The low-mode-volume high-quality microstructures feature pronounced cavity quantum electrodynamics (cQED) effects that are exploited for the realization of efficient single-photon sources and low-threshold microlasers. The compact and electrically driven devices are of special interest for applications in the field of quantum communication. In particular, operated as electrically triggered single-photon sources, the QD micropillars can act as building blocks for quantum key distribution and quantum repeaters. On the other hand, the electrically pumped microlasers with in-plane emission via whispering gallery modes or emission normal to the sample's surface are predestinated for integrated light sources in future photonic networks. The devices are based on doped high-quality factor GaAs/AlAs microcavity structures with InGaAs QDs in the active layer. A lateral injection scheme leaves the upper facet of the micropillars free of any absorbing metal and allows for efficient light output under electrical pumping of low-mode-volume micropillars with diameters between 1 and 20 μm. Due to cQED effects, triggered single-photon emission with high photon extraction efficiency up to 62% and a low multiphoton emission probability (g <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(2)</sup> (0) = 0.16) are realized for moderate-quality (Q ) factor samples. The efficient coupling of spontaneous emission into the lasing mode in high- Q micropillars results in ultralow laser threshold currents of less than 10 μA at cryogenic temperatures. Our paper demonstrates the high potential of electrically driven QD micropillars to act as integrated light sources in future communication systems.

Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K

Systematic excitation power and temperature-dependent measurements on the emission lines of single self-assembled InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in micropillars have been performed. The quantum dots were excited optically via a pulsed laser and their luminescence was collected using a micro-photoluminescence setup. The exciton and biexciton intensity, linewidth, and spectral position was investigated in a temperature range from 4 K up to 130 K. Single-photon emission from the quantum dots is presented up to a temperature of 100 K, confirmed by photon-statistics measurements.

Quantum dots as single-photon sources: Antibunching via two-photon excitation

Two-photon excitation induced photoluminescence (2PE-PL) microscopy of CdSe colloidal quantum dots at the single-entity level is demonstrated. We provide evidence for single nanoparticle microscopy in the two-photon excitation regime by varying the laser excitation average power, as well as by measuring the confocal point spread function in three dimensions with a single quantum dot. Model calculations of the point spread function are in good agreement with our experimental findings in the 2PE-PL nonsaturation regime. Ultimately, we observe photon antibunching and triggered single-photon emission at room temperature from those quantum nanostructures under two-photon excitation in a well-defined three-dimensional photonic volume.

Triggered single-photon emission from electrically excited quantum dots in the red spectral range

Pulsed electrical excitation was used to excite single InP/Ga0.51In0.49P quantum dots and obtain triggered single-photon emission in the red spectral range at an excitation repetition rate of up to 200 MHz. Increased repetition rates are prevented by the finite decay-time, and autocorrelation measurements look similar to what is expected for dc injection above 1 GHz. Finally, it is shown that negative voltage pulses can increase the decay-rate considerably such that 1 GHz excitation rates should be possible.

Quantum transduction of telecommunications-band single photons from a quantum dot by frequency upconversion

The ability to transduce non-classical states of light from one wavelength to another is a requirement for integrating disparate quantum systems that take advantage of telecommunications-band photons for optical fiber transmission of quantum information and near-visible, stationary systems for manipulation and storage. In addition, transducing a single-photon source at 1.3 {\mu}m to visible wavelengths for detection would be integral to linear optical quantum computation due to the challenges of detection in the near-infrared. Recently, transduction at single-photon power levels has been accomplished through frequency upconversion, but it has yet to be demonstrated for a true single-photon source. Here, we transduce the triggered single-photon emission of a semiconductor quantum dot at 1.3 {\mu}m to 710 nm with a total detection (internal conversion) efficiency of 21% (75%). We demonstrate that the 710 nm signal maintains the quantum character of the 1.3 {\mu}m signal, yielding a photon anti-bunched second-order intensity correlation, g^(2)(t), that shows the optical field is composed of single photons with g^(2)(0) = 0.165 < 0.5.

Electrically driven quantum dot-micropillar single photon source with 34% overall efficiency

We report on triggered single photon emission from low mode volume electrically driven quantum dot-micropillar cavities at repetition rates of up to 220 MHz. Due to an optimized layout of the doped planar microcavity and an advanced lateral current injection scheme, highly efficient single photon sources are realized. While g(2)(0)-values as low as 0.13±0.05 and a Purcell factor of 4 are observed for a 2.0 μm diameter micropillar, single photon emission at a rate of (35±7) MHz and an overall efficiency of (34±7)% are demonstrated for a 3.0 μm device.

Wavelength Tunable Triggered Single-Photon Source from a Single CdTe Quantum Dot on Silicon Substrate

Triggered single-photon emission from a single CdTe quantum dot (QD) grown on Si(001) substrate is demonstrated for the first time. The emission wavelength of QDs can be tuned in a wide spectral range (more than 8 meV) using a focused laser beam. A nearly perfect single-photon emission from the exciton lines is preserved even after energy tuning. The lifetime is also measured before and after laser processing, and no appreciable change is observed.

A gallium nitride single-photon source operating at 200 K

Fundamentally secure quantum cryptography has still not seen widespread application owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot structures have recently shown great promise as practical single-photon sources, and devices with integrated optical cavities and electrical-carrier injection have already been demonstrated. However, a significant obstacle for the application of commonly used III-V quantum dots to quantum-information-processing schemes is the requirement of liquid-helium cryogenic temperatures. Epitaxially grown gallium nitride quantum dots embedded in aluminium nitride have the potential for operation at much higher temperatures. Here, we report triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling. Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources.

Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot

Triggered single-photon generation from InAlAs quantum dot (QD) was demonstrated for the first time. Emitted photon energy coincides with high detection efficiency range of Si single-photon detectors, which is highly suitable for free-space communication. Single-QD spectroscopy and crossed photon correlation measurements unambiguously revealed that several emitting lines observed in a single mesa structure originated from the identical QD, and two temporary competing decay processes associated with neutral states and charged states were identified. Presence of the competing process is also inferred from an analysis of steady-state photoluminescence intensities. Formation process of charged exciton in QD is also discussed.

Correlated photon-pair emission from a charged single quantum dot

The optical creation and recombination of charged biexciton and trion complexes in an $(\mathrm{In},\mathrm{Ga})\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum dot is investigated by microphotoluminescence spectroscopy. Under the condition of quasiresonant pulsed excitation into the $p$ shell we find nearly background-free photoluminescence from single quantum dots where multiple-photon $(&gt;1)$ emission is fully suppressed. This reflects almost perfect triggered single-photon emission. Photon cross-correlation measurements demonstrate the temporally correlated decay of charged biexciton and trion states. Our calculations provide strong evidence for radiative decay from the excited trion state, thus indicating a long-lived $p$-electron spin configuration.