Tri-gate Nanowire MOSFETs Research Articles

Trigate nanowire MOSFETs analog figures of merit

This work studies, for the first time to our best knowledge, the perspectives of trigate nanowire (TGNW) MOSFETs for analog applications. An effect of nanowire width, length and orientation as well as frequency (up to 4GHz) and temperature (up to 225°C) on analog figures-of-merit (FoM) is analyzed. Benchmarking with other advanced devices such as ultra-thin body and BOX (UTBB) MOSFETs and SOI-based FinFETs is presented. TGNW MOSFETs are shown to be very promising for analog applications featuring high transconductance combined with high intrinsic gain. Only a slight reduction of device performance over the frequency and temperature ranges is observed.

Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry

Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power consumption. This is because the heat generated by the drain current is spread to the area larger than the NW channel. Dependences of temperature rise on other parameters such as gate oxide or buried oxide thickness suggest that heat dissipates mainly via source/drain or substrate not via the gate electrode.