For solar energy to provide a significant contribution to the energy needs of our society, the development of more efficient and less expensive photovoltaic cells is critical. Producing energy on a global scale—the so-called terawatt challenge—makes it essential to use a minimum amount of rare or costly photoactive elements. Photovoltaic cells based on thin semiconductor films are well placed to meet these criteria and have the potential to replace the dominant photovoltaic technology based on expensive bulk silicon wafers. To do this, their efficiency needs to be increased beyond current values, and the required thickness of the semiconductor film should be minimized as much as possible. However, ultra-thin semiconductor layers are less effective at absorbing sunlight, unless smart light-trapping techniques can be designed and implemented. Such techniques aim at increasing the optical path of light in the semiconductor, which enhances the absorption efficiency for the same material thickness. The ultimate limit to light trapping in thick semiconductor layers was determined by Yablonovitch and Cody1, 2 for the case of weak absorption, and was later generalized by Green3 to the case of arbitrary absorption. It is based on the concept of a Lambertian scatterer, i.e., a rough interface that randomizes the direction of propagation of incoming light when it enters the sample. This limit to light trapping is called the Lambertian limit. Such treatments assume a ray-optics approach and are rigorously valid only when the film thickness is much larger than the wavelength of visible light, which amounts to a few hundreds of nanometers. When the film thickness is less than this, a wave-optics approach becomes necessary and the light-trapping limit to absorption is not known. While it is generally agreed that wavelength-scale or nanophotonic structures should be employed, the optimal geometry for such structures is yet to be determined. A point of debate is whether ordered structures, Figure 1. Short-circuit current density (Jsc) under air mass 1.5 solar spectrum as a function of thickness for materials with (indirect bandgap) crystalline silicon (c-Si), and (direct bandgap) amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Solid lines refer to the single-pass case, while dashed lines indicate the Lambertian light-trapping limit.
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