Charge Trapping Research Articles

Scalable Synaptic Transistor Memory from Solution-Processed Carbon Nanotubes for High-Speed Neuromorphic Data Processing.

Neural networks as a core information processing technology in machine learning and artificial intelligence demand substantial computational resources to deal with the extensive multiply-accumulate operations. Neuromorphic computing is an emergent solution to address this problem, allowing the computation performed in memory arrays in parallel with high efficiencies conforming to the neural networks. Here, scalable synaptic transistor memories are developed from solution-sorted carbon nanotubes. The transistors exhibit a large switching ratio of over 105, a significant memory window of ≈12V arising from charge trapping, and low response delays down to tens of nanoseconds. These device characteristics endow highly stabilized reconfigurable conductance states, successful emulation of synaptic functions, and a high data processing speed. Importantly, the devices exhibit uniform characteristic metrics, e.g., with a 1.8% variation in the memory window, suggesting an industrial-scale manufacturing capability of the fabrication. Using the memories, a hardware convolution kernel is designed and parallel image processing is demonstrated at a speed of 1M bit per second per input channel. Given the efficacy of the convolution kernel, a promising prospect of the memories in implementing neuromorphic computing is envisaged. To explore the potential, large-scale convolution kernels are simulated and high-speed video processing is realized for autonomous driving.

Synergistic Passivation of Bulk and Interfacial Defects Improves Efficiency and Stability of Inverted Perovskite Solar Cells

Defects both in bulk and at the interfaces serve as charge trapping sites for nonradiative recombination and as ion migration pathways, resulting in degradation of perovskite solar cell efficiency and stability. In this work, a strategy for simultaneous passivation of both bulk and interfacial defects is reported. For bulk passivation polystyrene (PS) is used as an additive in the perovskite precursor which reduces the structural defects by forming larger defect‐free grains. While the F‐PEAI cation is used to passivate the interfacial defects, present at both perovskite HTL/ETL interfaces. Furthermore, by conducting control measurements with just bulk modification (PS), just interface modification (F‐PEAI), and a combination of both, the role of individual defect passivation strategies is decoupled. As a result of simultaneous bulk as well as interfacial passivation, the modified perovskite solar cell shows the highest efficiency of 22.32% with a high Voc of 1.14 V and fill factor of 80%. Moreover, the cells have excellent stability retaining 92% and 99% of their initial efficiency after 1008 h and 560 h under ISOS‐ D1 and D2 storage conditions. These results highlight the importance of simultaneous bulk and interfacial passivation for improving solar cell efficiency and stability.

Flexible p-Type WSe2 Transistors with Alumina Top-Gate Dielectric.

Tungsten diselenide (WSe2) field-effect transistors (FETs) are promising for emerging electronics because of their tunable polarity, enabling complementary transistor technology, and their suitability for flexible electronics through material transfer. In this work, we demonstrate flexible p-type WSe2 FETs with absolute drain currents |ID| up to 7 μA/μm. We achieve this by fabricating flexible top-gated FETs with a combined WSe2 and metal contact transfer approach using WSe2 grown by metal-organic chemical vapor deposition on sapphire. Despite moderate WSe2 crystal grain size, our devices show similar or higher |ID| and ID on/off ratio (∼105) compared to most devices with exfoliated single-crystal WSe2 from the literature. We analyze charge trapping in our devices using pulsed and bias stress measurements. Notably, the high |ID| values are preserved during pulsing, where charge trapping is minimized. Overall, we demonstrate a fabrication approach advantageous for high drain currents in flexible 2D transistors.

The Fabrication of Polyimide-Based Tunable Charge Traps Ternary Memristors Doped with Ni-Co Coated Carbon Composite Nanofibers

In the dynamic fields of information science and electronic technology, there is a notable trend towards leveraging carbon materials, favored for their ease of synthesis, biocompatibility, and abundance. This trend is particularly evident in the development of memristors, benefiting from the unique electronic properties of carbon to enhance device performance. This study utilizes sensitized chemical evaporation and spin-coating carbonization techniques to fabricate nickel-cobalt coated carbon composite nanofibers (SC-NCMNTs). Novel polyimide (PI) matrix composite memory devices were fabricated using in situ polymerization technology. Transmission electron microscopy (TEM) and micro-Raman spectroscopy analyses validated the presence of dual interface structures located between the Ni-Co-MWNTs, carbon composite nanofibers, and PI matrix, revealing a significant number of defects within the SC-NCMNTs/PI composite films. Consequently, this results in a tunable charge trap-based ternary resistive switching behavior of the composite memory devices, exhibiting a high ON/OFF current ratio of 104 and a retention time of 2500 s at an operating voltage of less than 3 V. The mechanism of resistive switching is thoroughly elucidated through a comprehensive charge transport model, incorporating molecular orbital energy levels. This study provides valuable insights for the rational design and fabrication of efficient memristors characterized by multilevel resistive switching states.

Strain-dependent charge trapping and its impact on the operational stability of polymer field-effect transistors

Despite recent dramatic improvements in the electronic characteristics of stretchable organic field-effect transistors (FETs), their low operational stability remains a bottleneck for their use in practical applications. Here, the operational stability, especially the bias-stress stability, of semiconducting polymer-based FETs under various tensile strains is investigated. Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs. Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content, which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain. The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules. This work provides new insights for the development of bias-stable stretchable OFETs.

Phase Reconstruction‐Directed Synthesis of Oxalate‐Functionalized Nickel Hydroxide Electrocatalyst for High‐Yield H2O2 Generation at Industrial Currents

AbstractThe electrochemical oxygen reduction reaction (2e− ORR) offers a promising approach for H2O2 production, yet developing highly active, selective, and stable electrocatalysts remains a challenge. In this work, a phase reconstruction strategy is presented to synthesize an oxalate‐adsorbed nickel hydroxide electrocatalyst (Ni(OH)2‐C2O4) through the self‐dissociation of nickel oxalate in an alkaline medium, leading to a notable enhancement in H2O2 yield at elevated current densities. Remarkably, Ni(OH)2‐C2O4 exhibits a 2e− selectivity exceeding 93% across a broad voltage range (0.0 to 0.5 V vs RHE) in 0.1 M KOH, outperforming pristine Ni(OH)2. When deployed as a gas diffusion electrode in a flow cell, the Ni(OH)2‐C2O4 catalyst demonstrates stable operation for 50 h at 200 mA cm−2, with a Faradaic efficiency surpassing 90% and a peak H2O2 yield of 6.2 mol g−1cat h−1. Comprehensive advanced characterizations, including in situ Raman spectroscopy, transient photovoltage spectra, and transient potential scanning spectra, coupled with post‐ORR analyses, reveal that surface‐adsorbed oxalate groups on Ni(OH)2 enhance the interfacial reaction kinetics between active Ni sites and reactants by inducing a charge trapping effect and forming a hydrogen‐bonded network, facilitating robust and high‐yield H2O2 production.

Improvement of charge trapping memory performance by modulating band alignment with oxygen plasma

Metal-oxide charge trapping memory (CTM) integration into amorphous and organic flexible devices encounters challenges due to high-temperature treatment. Our approach enhances memory performance via room-temperature oxygen plasma treatment, subtly adjusting surface band alignment without changing the original material structure and surface roughness. Infiltration of oxygen plasma induces band alignment bending, creating a barrier for charge trapping. The device with oxygen plasma treatment exhibits an impressive 19.06 V memory window and a charge trapping density of 3.58 × 1013/cm2. In comparison, the memory window of untreated device only has 5.56 V, demonstrating that oxygen plasma treatment significantly improves memory characteristics. The charge retention rate exhibits outstanding stability, potentially reaching 94% after a decade. It should be noted that careful control during plasma treatment is crucial to maintaining optimal memory effects. This facile, efficient technique, applicable to various oxide layers, offers a way for future advancements in metal-oxide CTM technology.

Structural and morphological studies of g-C3N4-functionalized MWCNTs nanocomposite for sunlight-responsive photocatalytic activity

Photocatalytic degradation of organic contaminants has been proven to be one of the greatest economical and efficient techniques to address environmental pollution problems. Multi-walled carbon nanotubes (MWCNTs)/g-C3N4 (GCN) nanocomposites (NCs) were synthesized by a hydrothermal process aided by ultrasound to produce active photocatalysts. The effective synthesis of GCN, MWCNTs, and MWCNTs/GCN NCs was confirmed by X-ray diffraction (XRD) patterns. The fabrication of GCN nanosheets (NSs), the nanotubular structure of MWCNTs, and a network of neuron-like structures for MWCNTs/GCN NCs were all revealed by structural and morphological characterization. The elemental mapping of NCs containing the suitable quantity of MWCNTs revealed a uniform distribution of the sample's component elements. When the optical properties of the fabricated nanomaterials were examined by employing UV–visible spectroscopy, the results revealed a blue shift (a shift of maximum absorption to the UV region), which suggests that the addition of MWCNTs increased the band-gap energy. The behaviour of e––h+ pair recombination was revealed by measuring the charge carrier movement and trapping efficiency using photoluminescence (PL) spectroscopy. Crystal violet (CV) dye was photocatalytically degraded using prepared NCs in the presence of sunlight, and the synergistic effects of GCN and MWCNTs were examined. With a degradation efficiency of 99.32 %, MWCNTs/GCN NCs demonstrated the best sunlight-irradiated photocatalytic activity for CV degradation. The degradation of CV was discovered to follow pseudo-first-order kinetics. Throughout five consecutive studies, the NCs demonstrated the highest levels of catalytic efficiency and recyclability, with 5 % reduced degrading activities. The trapping tests showed that the primary reactive species involved in the breakdown of CV were the •O2– and •OH radicals.

Improved Charge Recombination Efficiency in Organic Light‐Emitting Transistors via Luminescent Radicals

AbstractLuminescent radicals are attracting attention as emitters in electroluminescent devices thanks to the exploitation of doublet excitons. Recent studies reveal that exciton formation in radical organic light‐emitting diodes (OLEDs) primarily occurs through a charge trapping mechanism. Although typically detrimental for OLEDs, this might be a key process to elucidate light emission in organic light‐emitting transistors (OLETs). Here, a unipolar n‐type architecture suitable for the implementation of radical emitters is introduced, designed based on computational calculations. The operation of the as‐realized devices incorporating the newly synthesized [2,6‐dichloro‐4‐(2,6‐dimethoxyphenyl)phenyl](3,5‐dichloro‐4‐pyridyl) (2,4,6‐trichlorophenyl)methyl radical is investigated via transient electroluminescence measurements to demonstrate the occurrence of long‐living emission ascribed to the charge trapping mechanisms. Moreover, a comprehensive understanding of the processes governing radical‐OLET is obtained by recording complete 2D maps of both optical and electrical response of the device as a function of applied voltages. Notably, the trapping of electrons by radical moieties is demonstrated to generate a negative charge density in the emissive layer that facilitates holes to be injected: increasing the balance of opposite charge carriers, a tenfold enhancement of the external quantum efficiency (EQE) at the proper source‐drain and source‐gate voltage conditions is reported to reach a maximum EQE value of 0.2%.

High output performance leather-based triboelectric nanogenerator by tuning charge trapping and transport

Improving the output performance of triboelectric nanogenerators (TENGs) is a key to developing commercial applications. Here, a leather-based positive friction layer (LCF-PCOOH@PPy) was proposed by introducing carboxyl grafted polyhedral oligomeric silsesquioxane (PCOOH) as active charge trapping sites and Polypyrrole (PPy) to improve charge transport properties. Then, a high-performance leather-based TENG was successfully fabricated. With the addition of PCOOH and PPy, the open circuit voltage of the leather-based TENG showed a sharp enhancement, rising from 75 V to 350 V. Leather-based TENG exhibited strong robustness, and the current attenuation was only 3.5 % after running 15, 000 cycles continuously. The output performance of the leather-based TENG remained stable after 30 days of use. Besides, the fabricated device exhibited an extremely short response time and high sensitivity of 81 ms and 3.10 V × kPa−1, when used as a self-powered sensing device. For hygiene issues of wearable devices, the antibacterial rate of LCF-PCOOH@PPy to S. aureus reached 99.5 %. In this study, PCOOH was proposed for the first time as the charge trapping site of the friction layer material to improve the output performance of TENG, which provided a new idea for the selection of functional materials.

SAW-driven directional clearance of bacteria on submerged surfaces

The process of bacterial film formation on submerged surfaces commences with the attachment of bacteria to the substrate. Appropriate combinations of topology and surface chemistry have been explored to prevent biofilm anchoring at the solid–liquid interface. However, the failure to actively remove bacteria from solid surfaces within a fluid in a directional manner results in bacterial backflow onto those surfaces, thus leading to secondary contaminations. Herein, inspired by the biology broom of the ciliary beating system, we propose an active surface sweeper mechanism assisted by charged particles and surface acoustic waves (SAW) to facilitate the directional clearance of bacteria. Through the synergistic effect of charge trapping and acoustic propelling, the sweeper system demonstrates an effective inhibition of bacterial adhesion in the initial stage of biofilm formation. Utilizing SAW for twenty seconds yields a remarkable 94.8% efficiency in bacterial clearance, with antibacterial adhesion efficiency up to 92.4% and 98.8% for Escherichia coli and Staphylococcus aureus, respectively. Moreover, the accompanying theoretical force modeling offers a comprehensive mechanistic insight into the relationship between acoustic streaming and bacteria repelling. The motion analysis of bacteria-loaded particles suggests that the acoustic radiation force, rather than the Strokes force, determines the clearance direction of bacteria.

Optimal performance of silicon nanowire solar cells under low sunlight concentration and their integration as bottom cells in III–V multijunction systems

Nanostructured silicon solar cells are designed to minimize costs through reduced material usage while enhancing power conversion efficiency via superior light trapping and shorter charge separation distances compared to traditional planar cells. This study identifies the optimal conditions for nanoimprinted silicon nanowire (SiNW) solar cells to achieve maximum efficiency under low sunlight concentration and evaluates their performance as bottom cells in III–V multijunction solar cell systems. The findings indicate that the SiNW solar cell reaches its peak performance at a concentration factor of 7.5 suns and a temperature of 40°C or lower. Specifically, the absolute conversion efficiency under these conditions is 1.05% higher than that under unconcentrated light. Compared to a planar silicon solar cell under identical conditions, the SiNW solar cell exhibits a 3.75% increase in conversion efficiency. Additionally, the SiNW single-junction solar cell, when integrated in series with a commercial lattice-matched InGaP/GaAs dual-junction solar cell, was tested under unconcentrated sunlight, specifically at one-sun, global air mass 1.5 condition, to assess its viability in one-sun multi-junction solar cell applications. The results suggest that a III–V upper subcell with a smaller active area than that of the SiNW subcell is optimal for maximizing current production, which is favorable to the cost reduction of the device. This hybrid configuration is particularly advantageous for terrestrial applications, such as electric vehicles, which demand lightweight, high-performance multijunction solar cell devices. Although the weight reduction of the characterized SiNW solar cell with a full silicon substrate compared to its planar solar cell counterpart is 1.8%, recommendations to increase this reduction to as much as 64.5% are discussed to conclude this paper.

Advanced spectroscopic methods for probing in-gap defect states in amorphous SiNx for charge trap memory applications

Silicon nitride (SiNx) serves as the charge trap layer in current 3D NAND flash memory devices. The precise formation mechanism and electronic structure of localized defect trap states in SiNx remain elusive. Here, we present a refined experimental methodology to elucidate the in-gap defect states and the band gaps in amorphous SiNx thin films. Our approach integrates high-resolution reflection electron energy loss spectroscopy (REELS) and spectroscopic ellipsometry (SE) for comprehensive analysis. By systematical analysis, we aim to provide a robust method for determining in-gap electronic states in SiNx. We investigated two different SiNx films prepared by plasma-enhanced chemical vapor deposition and sputtering. Our analysis revealed several distinct in-gap states and determined band gap energies. This approach not only provide advanced spectroscopic methods to characterize the defect electronic states in SiNx, but also applicable to other large band gap semiconductors or dielectrics to predict device-level characteristics for future devices.

Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency

Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory Window, and Negligible Read Latency

Elucidating the time-dependent charge neutrality point modulation of polymer-coated graphene field-effect transistors in an ambient environment.

The charge neutrality point (CNP) is one of the essential parameters in the development of graphene field-effect transistors (GFETs). For GFET with an intrinsic graphene channel layer, the CNP is typically near-zero-volt gate voltage, implying that a well-balanced density of electrons and holes exists in the graphene channel layer. Fabricated GFET, however, typically exhibits CNP that is either positively or negatively shifted from the near-zero-volt gate voltage, implying that the graphene channel layer is unintentionally doped, leading to a unipolar GFET transfer characteristic. Furthermore, the CNP is also modulated in time, indicating that charges are dynamically induced in the graphene channel layer. In this work, understanding and mitigating the CNP shift were attempted by introducing passivation layers made of polyvinyl alcohol and polydimethylsiloxane onto the graphene channel layer. The CNP was found to be negatively shifted, recovered back to near-zero-volt gate voltage, and then positively shifted in time. By analyzing the charge density, carrier mobility, and correlation between the CNP and the charge density, it can be concluded that positive CNP shifts can be attributed to the charge trapping at the graphene/SiO2interface. The negative CNP shift, on the other hand, is caused by dipole coupling between dipoles in the polymer layer and carriers on the surface of the graphene layer. By gaining a deeper understanding of the intricate mechanisms governing the CNP shifts, an ambiently stable GFET suitable for next-generation electronics could be realized.

Reliability Improvement of 2-D WSe₂ FETs by Regulating Charge Trapping: An Ab Initio Demonstration

Reliability Improvement of 2-D WSe₂ FETs by Regulating Charge Trapping: An <i>Ab Initio</i> Demonstration

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

This paper reports a non-recessed normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a charge trapping gate dielectric stack. The charge trapping gate dielectric stack featuring a low density of fixed positive charges consists of an O3-based Al2O3 tunneling layer and an O3-based HfO2 blocking layer, both deposited via atomic layer deposition. For HEMT with a 15 nm AlGaN barrier layer, a threshold voltage of 2.57 V and an on-resistance of 8.50 Ω × mm are achieved. For positive bias temperature instability (PBTI) testing, the electric field provided by the 15 nm AlGaN layer serves as a barrier to channel carriers, significantly enhancing the PBTI test stability. The optimized gate dielectric stack enables the fabrication of the non-recessed normally off metal–insulator–semiconductor-HEMT with enhanced threshold voltage (Vth) stability.

Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy

Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role in determining device performance, while its spatial-temporal mapping remains lacking. In this study, we employ scanning ultrafast electron microscopy (SUEM), an emerging technique that combines high spatial-temporal resolution and surface sensitivity, to investigate photocarrier dynamics across a Si/Ge heterojunction. Charge dynamics are selectively examined across the junction and compared to far bulk areas, through which the impact of the built-in potential, band offsets, and surface effects is directly visualized. In particular, we find that the heterojunction drastically modifies the hot photocarrier diffusivities in both Si and Ge regions due to charge trapping. These findings are further elucidated with insights from the band structure and surface potential measured by complementary techniques. This work demonstrates the tremendous effect of heterointerfaces on hot photocarrier dynamics and showcases the potential of SUEM in characterizing realistic optoelectronic devices.

Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field

AbstractThe insulating properties of silicone gel used for silicon carbide‐insulated gate bipolar transistors encapsulation may deteriorate seriously under ultra‐fast pulsed electric fields. The essence of insulation degradation lies in the deterioration of materials caused by dynamic phenomena at microscopic scale, such as charge trapping and detrapping. Different from the steady‐state operating condition, insulating materials exhibit a sharp decrease in their insulating properties when subjected to a rapidly changing electric field. To investigate the insulation failure of silicone gel materials under an ultra‐fast pulsed electric field, Marcus hopping mechanism for charge response is proposed. By calculating the relaxation time with different defects, we characterise the degradation of the materials. According to the force analysis of space charge, the authors establish a relationship between insulation failures and charge relaxation time. Combined with the experimental results on electrical treeing in silicone gel, the feasibility of the theory is verified. The experimental phenomenon can be well explained, that is, the initial voltage of the electrical trees decreased sharply with shortening the edge time of the pulsed electric field, especially on the nanosecond time scale.

Hydrogen-bond enhanced interior charge transport and trapping in all-fiber triboelectric nanogenerators for human motion sensing and communication

Maximizing charge density output within confined tribolayer areas is crucial for advancing triboelectric nanogenerator (TENG) performance. While conventional methods primarily focus on enhancing current density by modifying the surface properties of tribo-surfaces, the impact of dipole-dipole interactions between polymer molecular chains in the fibrous tribomaterials has been underexplored. This study reveals that intermolecular dipole-dipole interactions, mediated by hydrogen bonding between chitosan and nylon66 molecular chains, serve as effective bridging mechanisms that substantially boost TENG current density. Furthermore, we developed a breathable and antibacterial electrode by depositing silver nanowires (AgNWs) on the tribolayer surfaces. To prevent air breakdown resulting from excessively high current density, multiwalled carbon nanotubes (MWCNTs) were integrated to enhance electron transfer and storage. The structure we constructed achieved an optimized performance with a high voltage of 335 V, current density of 194.5 mA m−2 and power density of 65.1 W m−2, which demonstrates outstanding performance compared to previously obtained results. Finally, the prepared SWS-TENG was attached to the fingertips, wrist, and neck to track the physiological signals of the human state during standing, walking, and running. In addition, the integration of Morse code functionality introduces new possibilities for healthcare, particularly for non-verbal patients, enabling non-invasive communication of symptoms and emotions. This technology demonstrates significant potential as a versatile and non-invasive tool for point-of-care (PoC) and biomedical applications when deployed on various parts of the human body.