Majority Carrier Transport Research Articles

A study of activated phosphorus distribution within silicon substrate for polysilicon passivating contacts based on an in-line PVD system

An in-line PVD system consisting of plasma oxidation chamber and phosphorus-doped amorphous silicon deposition chamber was used to fabricate highly-doped polysilicon passivating contact structure for commercial TOPCon solar cells, which can help to achieve simple fabrication process and excellent electrical properties. In this paper, we studied how the doping profiles of ionized phosphorus atoms in the passivating contact formed by this method varies with the deposition conditions, especially the in-diffusion profile in the silicon substrate. Increasing the RF power of plasma oxidation can prevent phosphorus from penetrating through SiOx to form a shallow profile, and reducing the power is conducive to the formation of more pinholes on SiOx, resulting in a wide profile following the shallow profile. The shallow profile effectively inhibits the surface recombination rate and thus achieve good passivation quality, while the emergence of the following wide profile helps to reduce the contact resistivity by providing more majority carrier transport channels. The 100 W condition constructed a shallow and gradually widening doping profile, exhibiting a low recombination current density of 16.5 fA/cm2 and a low contact resistivity of 1.87 mΩ·cm2. However, the SiOx thickness and density obtained at 80 W are insufficient for achieving a shallow-first-then-widen doping profile, even with adjustments to thermal activation conditions. Additionally, we found the engineering of surface microstructure on silicon wafers also has an impact on the doping profile.

Numerical simulation of germanium selenide heterojunction solar cell

One of the research hotspots in thin film solar cell technology is to seek the suitable absorber layer materials to replace cadmium telluride and copper indium gallium selenium. Recently, germanium selenide (GeSe) with excellent photoelectric property has entered the field of vision of photovoltaic researchers. The main factors affecting the performance of heterojunction solar cell are the material properties of each functional layer, the device configuration, and the interface characteristics at the heterostructure. In this study, we utilize GeSe as the absorber layer, and assemble it with stable TiO<sub>2</sub> as electron transport layer and with Cu<sub>2</sub>O as hole transport layer, respectively, into a heterojunction solar cell with the FTO/TiO<sub>2</sub>/GeSe/Cu<sub>2</sub>O/Metal structure. The TiO<sub>2</sub> and Cu<sub>2</sub>O can form small spike-like conduction band offset and valence band offset with the absorber layer, respectively, which do not hinder majority carrier transport but can effectively suppress carrier recombination at the heterointerface. Subsequently, the wxAMPS software is used to simulate and analyze the effects of functional layer material parameters, heterointerface characteristics, and operating temperature on the performance parameters of the proposed solar cell. Considering the practical application, the relevant material parameters are selected carefully. After being optimized at 300 K, the proposed GeSe heterojunction solar cell can reach an open circuit voltage of 0.752 V, a short circuit current of 40.71 mA·cm<sup>–2</sup>, a filling factor of 82.89%, and a conversion efficiency of 25.39%. It is anticipated from the results that the GeSe based heterojunction solar cell with a structure of FTO/TiO<sub>2</sub>/GeSe/Cu<sub>2</sub>O/Au has the potential to become a high-efficiency, low toxicity, and low-cost photovoltaic device. Simulation analysis also provides some references for designing and preparing the heterojunction solar cells.

Radiation stability of mixed tin–lead halide perovskites: Implications for space applications

Mixed organic-inorganic halide perovskite solar cells (PSCs) have received considerable attention in recent years for their impressive solar to electrical power efficiency gains and potentially lower material and processing costs for optoelectronic applications. In addition to terrestrial applications, PSCs are of interest to the space power markets for their low cost, low weight, adaptability to flexible architectures, and tolerance to high energy particle irradiation (mainly protons and electrons). Here we investigate the properties of mixed formamidinium-methylammonium tin-lead iodide (FASn)0.6(MAPb)0.4I3 perovskites which lower the lead content as well as the bandgap, making them attractive for the low bandgap absorber material in tandem PSCs. Through current density-voltage (JV) characterization at lower temperatures, majority carrier transport is hindered and a barrier to photogenerated carrier extraction is evident. This is attributed to the thermally induced change of the bandgap of the absorber layer relative to the energy selective contacts in the device. We find that although the architecture used here hinders the performance at temperatures below 225 K, the tolerance to high energy (3.7 MeV) protons is impressive, considerably out-performing commercially available thin-film CIGS. These results suggest further improvements to structural and interface stability as well as lightweight encapsulation could lead to all perovskite flexible tandem arrays deployed for power generation on missions to low Earth orbit, the moon, Mars, and beyond.

(Invited) Surface Photovoltage Spectroscopy Observes Junctions and Carrier Separation in Gallium Nitride Nanowire Arrays for Overall Water-Splitting

Gallium nitride (GaN) nanowire arrays on silicon are able to drive the overall water-splitting reaction with up to 3.3% solar-to-hydrogen efficiency. Photochemical charge separation is key to the operation of these devices, but details are difficult to observe experimentally because of the number of components and interfaces. Here we use surface photovoltage spectroscopy (SPS) to study charge transfer in i- and n- and p-GaN nanowire arrays on n+-Si wafers in the presence and absence of Rh/Cr2O3 co-catalysts. The effect of the space charge layer and sub-bandgap defects on majority and minority carrier transport can be clearly observed and estimates of the built-in potential of the junctions can be made. Transient illumination of the p-GaN/n+-Si junction generates up to -1.4 V surface photovoltage by carrier separation along the GaN nanowire axis. This process is central to the overall water-splitting function of n+-Si/p-GaN/Rh/Cr2O3 nanowire array. These results improve our understanding of photochemical charge transfer and separation in group III-V semiconductor nanostructures for the conversion of solar energy into fuels. Figure 1

Back-contact barrier analysis to develop flexible and bifacial Cu(In,Ga)Se2 solar cells using transparent conductive In2O3: SnO2 thin films

The presence of a back-contact (BC) barrier disturbs the current density-voltage (J-V) characteristics of solar cells by limiting the majority carrier transport, which is commonly referred as “rollover effect”. In this study, the majority barrier height as high as 131 meV at the Cu(In,Ga)Se2 (CIGS)/Mo-BC interface was calculated using the temperature dependent J-V characteristics. Subsequently, the lift-off process was applied to peel off the substrate-type solar cells from Mo-BC to investigate the origin of the rollover effect. The MoSe2 layer was detected on lift-off Mo samples using energy dispersive X-ray spectroscopy and the grazing-incidence X-ray diffraction measurements. Finally, optically transparent In2O3:SnO2 (ITO) thin films were deposited on the lift-off CIGS samples to fabricate flexible and bifacial solar cells. The solar cell with ITO-BC showed improved fill factor and efficiency without rollover effect, owing to highly Ohmic-contact at CIGS/ITO interface. In this contribution, it has been demonstrated that MoSe2 layer, i.e. with unreferred crystallographic orientation, can be removed by lift-off process to develop bifacial CIGS solar cells on flexible substrates. The bifacial cell with ITO-BC showed efficiencies of 10.1% and 2.8% for frontside and backside illuminations, respectively.

High Interfacial Hole‐Transfer Efficiency at GaFeO3 Thin Film Photoanodes

AbstractThe photoelectrochemical properties of polycrystalline GaFeO3 (GFO) thin films are investigated for the first time. Thin films prepared by sol–gel methods exhibit phase‐pure orthorhombic GFO with the Pc21n space group, as confirmed by X‐ray diffraction and Raman spectroscopy. Optical responses are characterized by a 2.72 eV interband transition and sub‐bandgap d–d transitions associated with octahedral and tetrahedral coordination of Fe3+ sites. DFT‐HSE06 electronic structure calculations show GFO is highly ionic with very low dispersion in the valence band maximum (VBM) and conduction band minimum (CBM). Electrochemical impedance spectroscopy reveals n‐type conductivity with a flat band potential (Ufb) of 0.52 V versus reversible hydrogen electrode, indicating that GFO has the most positive CBM reported of any ferrite. The photoelectrochemical oxidation of SO32− shows an ideal semiconductor–electrolyte interfacial behavior with no evidence of surface recombination down to the Ufb. Surprisingly, the onset potential for the oxygen evolution reaction also coincides with the Ufb, showing interfacial hole‐transfer efficiency above 50%. The photoelectrochemical properties are limited by bulk recombination due to the short‐diffusion length of minority carriers as well as slow transport of majority carriers. Strategies towards developing high‐efficiency GFO photoanodes are briefly discussed.

Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting.

Gallium nitride (GaN) nanowire arrays on silicon are able to drive the overall water-splitting reaction with up to 3.3% solar-to-hydrogen efficiency. Photochemical charge separation is key to the operation of these devices, but details are difficult to observe experimentally because of the number of components and interfaces. Here, we use surface photovoltage spectroscopy to study charge transfer in i-, n-, and p-GaN nanowire arrays on n+-Si wafers in the presence and absence of Rh/Cr2O3 co-catalysts. The effect of the space charge layer and sub-bandgap defects on majority and minority carrier transport can be clearly observed, and estimates of the built-in potential of the junctions can be made. Transient illumination of the p-GaN/n+-Si junction generates up to -1.4 V surface photovoltage by carrier separation along the GaN nanowire axis. This process is central to the overall water-splitting function of the n+-Si/p-GaN/Rh/Cr2O3 nanowire array. These results improve our understanding of photochemical charge transfer and separation in group III-V semiconductor nanostructures for the conversion of solar energy into fuels.

Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T-Junction.

Metal-based electronics is attractive for fast and radiation-hard electronic circuits and remains one of the long-standing goals for researchers. The emergence of 1T-TaS2, a layered material exhibiting strong charge density wave (CDW)-driven resistivity switching that can be controlled by an external stimulus such as electric field and optical pulses, has triggered a renewed interest in metal-based electronics. Here we demonstrate a negative differential resistor (NDR) using electrically driven CDW phase transition in an asymmetrically designed T-junction made up of 1T-TaS2/2H-MoS2 van der Waals heterojunction. The principle of operation of the proposed device is governed by majority carrier transport and is distinct from usual NDR devices employing tunneling of carriers; thus it avoids the bottleneck of weak tunneling efficiency in van der Waals heterojunctions. Consequently, we achieve a peak current density in excess of 105 nA μm-2, which is about 2 orders of magnitude higher than that obtained in typical layered material based NDR implementations. The peak current density can be effectively tuned by an external gate voltage as well as photogating. The device is robust against ambiance-induced degradation, and the characteristics repeat in multiple measurements over a period of more than a month. The findings are attractive for the implementation of active metal-based functional circuits.

Photogenerated Carrier Transport Properties in Silicon Photovoltaics

Electrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally “dark” conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm−3, (7.6 ± 0.1) × 1015 cm−3]; μ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under “light” 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (μh or μe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm−3, (2.2 ± 0.2) × 1014 cm−3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

MonoPoly™ cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces

Successful integration of carrier selective contacts (so-called passivated contacts) in p-type and n-type front-and-back contact (FAB) silicon solar cells could lift cell efficiencies to above 24% in mass production. In this work, we introduce one of SERIS’ monoPoly FAB cell structures, which features the monofacial (single-sided) application of a polysilicon (poly-Si) layer. Using industrial tools, doped poly-Si on an ultrathin interface oxide is shown to provide extremely low recombination current density of 4 fA/cm2 and implied open-circuit voltage of about 745 mV that are able to withstand the high-temperature firing process of screen-printed metal contacts. The interface oxide and the doping concentration of the poly-Si film are of great importance for the surface passivation quality and the transport of majority carriers, especially for fire-through screen-printed contacts as used in this work. Our initial pilot-line results show a very promising cell efficiency of 21.4% on large-area (244.3 cm2) n-type monocrystalline wafers with screen-printed and fire-through metal contacts on both sides. A roadmap for nFAB monoPoly cells towards 24% efficiency is presented on the basis of an optimisation of the device architecture and various processing steps.

Surface passivation of crystalline silicon solar cells: Present and future

In the first part of this paper, we review the developments which led to the present state-of-the-art in the surface passivation of today's industrially predominant dopant-diffused crystalline silicon (c-Si) solar cells, based on dielectric layers such as silicon oxide, silicon nitride, aluminum oxide and stacks thereof. In the second part of this review, we focus on the future developments in the field of c-Si solar cells based on carrier-selective passivation layers. Whereas the dielectric layers are insulating and are hence applied only for passivating the non-contacted areas of the silicon surface, the carrier-selective passivation layers are intended to provide an effective passivation of non-contacted as well as contacted areas of a c-Si solar cell, thereby increasing the efficiency potential of c-Si solar cells significantly. Due to the fact that the carrier-selective layers are implemented in a contact, besides the good passivation properties for minorities, these layers must also provide a good majority carrier transport, i.e. they have to provide a low contact resistance. Both properties, i.e. suppression of minority-carrier recombination as well as good majority-carrier transport, define the selectivity of the carrier-selective contact, which is an important figure of merit for the assessment and comparison of different types of carrier-selective contacts. One very promising type of carrier-selective passivation layer is based on heavily doped polycrystalline silicon layers deposited on a thin silicon oxide layer, the latter providing the excellent passivation while enabling efficient majority-carrier transport via pin-holes and/or tunneling. Moreover, we discuss metal oxides and conductive polymers, which have only recently been applied to c-Si photovoltaics, but seem to have a promising potential as low-cost selective contact materials. We finally compare combinations of the various options of carrier-selective layers concerning their combined selectivities and efficiency potentials.

Low work function intermetallic thin film as a back surface field material for hybrid solar cells

In this study, MgNd intermetallic is deposited as a thin film using magnetron sputtering. Ultraviolet photoelectron spectroscopy (UPS) is employed to determine the work function of the MgNd thin film. It is found that the MgNd thin film has a low work function of 3.5 eV, leading to its application in hybrid poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS)/n-Si solar cells as a back surface field (BSF) material. By introducing a MgNd thin film into the back Si/electrode interface of a hybrid solar cell, obvious improvements in the open circuit voltage (Voc) and fill factor (FF) of the device are observed, leading to an increase by more than 26% in power conversion efficiency (PCE). Temperature-dependent current density–voltage (J-V) and Voc-light intensity measurements demonstrate that the introduction of a MgNd thin layer increases the built-in voltage at the rear interface and decreases the recombination current in the device. These improvements are attributed to the efficacy of the MgNd thin film as a BSF by reducing minority carrier recombination and enhancing majority carrier transport.

Impact of carrier doping on electrical properties of laser-induced liquid-phase-crystallized silicon thin films for solar cell application

Large-grain-size (>1 mm) liquid-phase-crystallized silicon (LPC-Si) films with a wide range of carrier doping levels (1016–1018 cm−3 either of the n- or p-type) were prepared by irradiating amorphous silicon with a line-shaped 804 nm laser, and characterized for solar cell applications. The LPC-Si films show high electron and hole mobilities with maximum values of ∼800 and ∼200 cm2 V−1 s−1, respectively, at a doping level of ∼(2–4) × 1016 cm−3, while their carrier lifetime monotonically increases with decreasing carrier doping level. A grain-boundary charge-trapping model provides good fits to the measured mobility–carrier density relations, indicating that the potential barrier at the grain boundaries limits the carrier transport in the lowly doped films. The open-circuit voltage and short-circuit current density of test LPC-Si solar cells depend strongly on the doping level, peaking at (2–5) × 1016 cm−3. These results indicate that the solar cell performance is governed by the minority carrier diffusion length for the highly doped films, while it is limited by majority carrier transport as well as by device design for the lowly doped films.

ZnS thin film functionalized as back surface field in Si solar cells

A good quality ZnS thin film has been functionalized as back surface field (BSF) in Si solar cells. Compared to Si solar cells without BSF, the solar cells with ZnS BSF presents about 50% increase of the power conversion efficiency (PCE). This improvement stems from a downward energy band at the c-Si (n)/ZnS interface, which forms an interfacial field-effect. This field impedes the minority carrier recombination and favors the majority carrier transport, so that open circuit voltage and fill factor of the device are increased. Additional electrode of low work function (e.g. Mg) can further enhance the performance of the solar cell with the ZnS BSF thanks to second downward energy band at ZnS/electrode interface. This work demonstrates that the compound thin film can act as a candidate for a functional layer in Si solar cells.

Humidity sensitive polymers In solution processed adjustable pore-volume Cu(In,Ga)S2 photocathodes for solar hydrogen production

P-type Cu(In,Ga)S2 semiconductors are promising candidates to be used as photocathodes for solar water splitting. Porous structures have been widely used to improve the performances of photoelectrodes due to good minority carrier transport. However, a porous photoelectrode has longer transport distance of majority carriers, which limits its performance. Controlling pore volume of a photoelectrode can balance minority and majority carrier transport and improve the performance. Here, a porous Cu(In,Ga)S2 film is prepared by facile spin-coating method. The pore volume of Cu(In,Ga)S2 film is controlled by adjusting relative humidity (RH) of air during spin-coating process. Further studies suggest that polyvinyl acetate (PVAc) in precursor solution is a humidity sensitive polymer and plays a key role to form different pore volume. The 40% RH sample has the best performance due to its optimum pore volume. After further coated with CdS surface passivation layer and Pt electrocatalyst on the surface, a 40% RH Cu(In,Ga)S2 photocathode indicates a photocurrent density of 8.6 mA cm−2 at 0 VRHE, which is one of the highest photocurrents of Cu(In,Ga)S2 photocathodes. This new strategy for adjusting pore volume is also suitable to prepare other solution-processed inorganic materials.

Organic doped/undoped interface based diode structure: Distinct mechanisms underlying forward and reverse bias

Abstract Organic semiconductor diodes fabricated using doped/undoped (high-low) homojunction has the potential of providing controlled and high quality current density-voltage (J-V) characteristics based on majority carrier transport. We study mechanisms of transport underlying such characteristics both in forward and reverse bias regimes of typical doped/undoped homojunction organic diodes fabricated using 4,4′,4″-tris( N -3-methylphenyl- N -phenyl-amino) triphenylamine ( m -MTDATA). We study the J-V characteristics over a wide temperature range (200–300 K), and by varying the intrinsic layer thickness between 10 and 100 nm. The forward bias current, before entering into the space charge limited regime, is exponential over several orders of magnitude with the slope being temperature independent for all intrinsic layer thickness down to 10 nm. The reverse bias characteristics, on the other hand, are highly sensitive to the thickness of the intrinsic layer. While the forward bias is controlled by tunneling at the homojunction interface, the reverse bias is controlled by the interface of cathode (aluminum in this case) and the intrinsic layer. We show that the reverse current is due to Fowler-Nordheim tunneling across a barrier height, which is temperature independent but is sensitive to the layer thickness of the intrinsic layer. The origin of the thickness dependence of barrier height (0.45–0.72 eV for 10–20 nm) is attributed to the change in background carrier concentration in the intrinsic layer due to diffusion of carriers from the highly doped side. The results clearly show that the diffusion length of the majority carriers is approximately 1 nm and is comparable to the nearest neighbor jump distance.

Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices.

Transition metal dichalcogenide (TMDC) monolayers are considered to be potential materials for atomically thin electronics due to their unique electronic and optical properties. However, large-area and uniform growth of TMDC monolayers with large grain sizes is still a considerable challenge. This report presents a simple but effective approach for large-scale and highly crystalline molybdenum disulfide monolayers using a solution-processed precursor deposition. The low supersaturation level, triggered by the evaporation of an extremely thin precursor layer, reduces the nucleation density dramatically under a thermodynamically stable environment, yielding uniform and clean monolayer films and large crystal sizes up to 500 µm. As a result, the photoluminescence exhibits only a small full-width-half-maximum of 48 meV, comparable to that of exfoliated and suspended monolayer crystals. It is confirmed that this growth procedure can be extended to the synthesis of other TMDC monolayers, and robust MoS2 /WS2 heterojunction devices are easily prepared using this synthetic procedure due to the large-sized crystals. The heterojunction device shows a fast response time (≈45 ms) and a significantly high photoresponsivity (≈40 AW-1 ) because of the built-in potential and the majority-carrier transport at the n-n junction. These findings indicate an efficient pathway for the fabrication of high-performance 2D optoelectronic devices.

Bias\u2013selectable nBn dual\u2013band long\u2013/very long\u2013wavelength infrared photodetectors based on InAs/InAs1\u2212xSbx/AlAs1\u2212xSbx type\u2013II superlattices

Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/InAs1−xSbx T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high–performance dual–band photodetectors based on InAs/InAs1−xSbx T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging. We report the demonstration of high–performance bias–selectable dual–band long–wavelength infrared photodetectors based on new InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattice design. Our design uses two different bandgap absorption regions separated by an electron barrier that blocks the transport of majority carriers to reduce the dark current density of the device. As the applied bias is varied, the device exhibits well–defined cut–off wavelengths of either ∼8.7 or ∼12.5 μm at 77 K. This bias–selectable dual–band photodetector is compact, with no moving parts, and will open new opportunities for multi–spectral LWIR and VLWIR imaging and detection.

Magnesium thin film as a doping-free back surface field layer for hybrid solar cells

In this work, a magnesium (Mg) thin film with a low work function is introduced to obtain a downward energy band at the rear surface of a hybrid solar cell to achieve the function of a back surface field (BSF) similar to the conventional n-n+ high-low junction, i.e., favouring the majority carrier transport and suppressing minority carrier recombination. The open circuit voltages (Voc) of the hybrid solar cells with the Mg BSF layer achieve a clear improvement over those containing only the conventional metal electrode (e.g., Ag), resulting in an increase in the power conversion efficiency (PCE) of the hybrid solar cells from 9.2% to 12.3%. The Suns-Voc measurement determined using a Sinton tool gives Voc as a function of light intensity and shows that Voc increases linearly with the light intensity for the solar cell with the Mg BSF but increases first and then stabilises for the cells without the Mg BSF. This result is attributed to a difference in back surface recombination, further confirming the efficacy of an Mg thin film as a BSF. This work indicates that the BSF of hybrid solar cells could be achieved by a doping-free, simple, and room temperature process.

Process simplification for 15.6×15.6 cm2 interdigitated back contact silicon solar cells by laser doping

In this paper we propose a possible process simplification for pseudosquare 15.6×15.6cm2 Interdigitated Back Contact (IBC) CZ-Si solar cells. By using laser doping to create a selective BSF, one out of three diffusions and a wet etching step can be avoided, compared to a completely diffusion-based process flow. We show numerical optimization of this simplified cell structure in terms of: i) rear optics with additional SiNx capping layer, ii) contact fraction of the selective BSF. The results feature a top cell efficiency of 21.7% measured over the area of 239cm2. Further characterization implies that cells were limited mainly by: i) FF losses attributed to lateral majority carrier transport in the BSF region and increased J02 losses, ii) current loss which can be related to the BSF region.