Antimony sulfide (Sb2S3) is an auspicious contender for semitransparent and tandem solar cells owing to its exceptional optoelectronic characteristics. Yet, complex bulk and heterojunction defects hinder achieving optimal power conversion efficiency (PCE). Although CdS is an established electron transport layer (ETL) in Sb-chalcogenide solar cells benefitting from its exceptional electron mobility (350 cm2V–1s−1) and energy level alignments, its potential contribution has been deplorably overlooked in Sb2S3 semitransparent photovoltaics (STPV). Herein, an optimized TiO2/CdS double ETL strategy is embraced to counteract CdS absorption loss and mitigate the “deep cliff” conduction band off-set at TiO2/Sb2S3 heterojunction. Subsequently, an evolved chemical bath deposition strategy is proposed to deposit a uniform, faster, and comparatively more transparent Sb2S3 absorber layer. A systematic investigation of the absorber layer and in-depth analysis of carrier dynamics at heterojunctions advocate for the mitigation of charge accumulation and recombination at the interface, thereby pledging superior carrier transport. The advantageous gradient energy band alignment of TiO2/CdS/Sb2S3 realized a record PCE of 5.61 % for STPV. Furthermore, the semitransparent device is innovatively employed as a window, enabling transmitted light to be harvested by subsequent Sb2S3 solar cells. It maintains 18 % of its standalone PCE, thereby setting new benchmarks for its practical submissions.
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