Transistor Active Layer Research Articles

Self‐Encapsulated N‐Type Semiconducting Photoresist Toward Complementary Organic Electronics

AbstractSemiconducting photoresists hold great promise for scale‐up manufacturing of organic field‐effect transistors (OFETs) for integrated organic electronics. While photolithographic p‐type OFETs have achieved a considerable balance among patterning precision, electrical properties and process stability, it remains challenging for n‐type OFETs due to the inherent limited mobility and ambient instability. Herein, a n‐type semiconducting photoresist (SPr) is developed that is compatible with photolithography procedures. By utilizing the solvent‐driven force, a self‐encapsulated blend film with gradient semiconductor phase is prepared, where the underneath transistor active layer is protected by the upper cross‐linked network, avoiding solvent erosion and air doping. As such, a mobility up to 1.1 cm2 V−1 s−1 that is comparable with amorphous Si is achieved, with remained mobility by ≈90% after long‐term exposure to developer and stripper or atmospheric conditions. The sub‐micrometer patterning accuracy of SPr enables the fabrication of organic transistor arrays with a density of 9 × 105 units cm−1, which is comparable to other state‐of‐the‐art devices fabricated by the printing or photolithography, demonstrating immense potential in integrated organic electronics.

A Semiconducting Two-Dimensional Polymer as an Organic Electrochemical Transistor Active Layer.

Organic electrochemical transistors (OECTs) are devices with broad potential in bioelectronic sensing, circuits, and neuromorphic hardware. Their unique properties arise from the use of organic mixed ionic/electronic conductors (OMIECs) as the active channel. Typical OMIECs are linear polymers, where defined and controlled microstructure/morphology, and reliable characterization of transport and charging can be elusive. Semiconducting two-dimensional polymers (2DPs) present a new avenue in OMIEC materials development, enabling electronic transport along with precise control of well-defined channels ideal for ion transport/intercalation. To this end, a recently reported 2DP, TIIP, is synthesized and patterned at 10µm resolution as the channel of a transistor. The TIIP films demonstrate textured microstructure and show semiconducting properties with accessible oxidation states. Operating in an aqueous electrolyte, the 2DP-OECT exhibits a device-scale hole mobility of 0.05 cm2 V-1 s-1 and a µC* figure of merit of 1.75 F cm-1 V-1 s-1 . 2DP OMIECs thus offer new synthetic degrees of freedom to control OECT performance and may enable additional opportunities such as ion selectivity or improved stability through reduced morphological modulation during device operation.

Minimizing Residual Images of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistor-Based Flexible Organic Light-Emitting Diode Displays by Controlling Oxygen Partial Pressure.

Plastic organic light emitting diode displays suffer from residual image, which is closely connected with the hysteresis of the driving thin-film transistor in the pixels. Therefore, in researching paper, we manufactured an OLED display comprise a polyimide substrate and an amorphous indium gallium zinc oxide thin film transistor active layer. Paper proposed a solution for reducing hysteresis through oxygen partial pressure control and evaluated it using hysteresis analysis. The results showed that hysteresis is strongly dependent on the threshold voltage is settled by the oxygen partial pressure while active layer deposition of the TFT. Moreover, hysteresis decreases with increasing temperature.

Spatially Uniform Shallow Trap Distribution in an Ultrathin Organic Transistor

In organic electronic materials, charge carrier transport is often limited by disorder‐induced trap states very close in energy to the ideal band transport states. We directly view the location and impact of these “shallow” traps on an ultrathin transistor active layer using Kelvin Probe Force Microscopy. As the transistor turns on, dramatic fluctuations in the surface potential of the active channel suddenly arise due to charge trapping and release processes. Importantly, the spatial distribution of rapid fluctuations in surface potential is uniform throughout the active channel. These facts strongly constrain the microscopic origin of shallow charge traps, and associated efforts to optimize the mobility and noise performance baseline in device applications.

Electrosynthesis and characterization of ZnO nanoparticles as inorganic component in organic thin-film transistor active layers

ZnO nanoparticles have been prepared via a green electrochemical synthesis method in the presence of a polymeric anionic stabilizer (poly-sodium-4-styrenesulfonate, PSS), and then applied as inorganic component in poly-3-hexyl-thiophene thin-film transistor active layers. Different parameters (i.e. current density, electrolytic media, PSS concentration, and temperature) influencing nanoparticle synthesis have been studied. The resulting nanomaterials have been investigated by transmission electron microscopy (TEM) and spectroscopic techniques (UV-Vis, infrared, and x-ray photoelectron spectroscopies), assessing the most suitable conditions for the synthesis and thermal annealing of nanostructured ZnO. The proposed ZnO nanoparticles have been successfully coupled with a poly-3-hexyl-thiophene thin-film resulting in thin-film transistors with improved performance.

Sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor

We report a very sensitive gas sensor embedded in a vertical polymer space-charge-limited transistor. The oxidizing and reducing gases act as electron dedoping and electron doping agents on the transistor active layer to change the potential distribution in the vertical channel and hence to change the output current density. With a 30-ppb detection limit to ammonia, the sensor can be used for non-invasive breath monitor in point-of-care applications. The integration of a sensitive gas sensor and a low-operation-voltage transistor in one single device also facilitates the development of low-cost and low-power-consumption sensor array.

Organic Thin Film Transistors based on Pentacene and PTCDI as the Active Layer and LiF as the Insulating Layer

AbstractDue to the advantages of low production cost, flexibility and low temperature fabrication, much effort has been devoted to the development of organic electronic devices such as light emitting diodes, photovoltaics and transistors. Organic thin film transistors have several important applications such as switching devices for active-matrix OLED displays, smart cards, identification tags and sensors [1-3]. However, the low carrier mobility in organic materials and the difficulty of integrating organic devices into inorganic processing procedures have hindered the development of organic transistors that are comparable to traditional transistors [4]. Much effort has been devoted to develop new organic materials with higher carrier mobility, while retaining the same conventional inorganic metal-oxide-semiconductor structures.Lithium fluoride (LiF) has the largest band gap and the largest negative electron affinity of any solid, [5] making it a superb candidate for use in the insulating layer of transistors. Using LiF as the gate dielectric layer can facilitate the organic transistor fabrication. In this work, thin film transistors based on pentacene and PTCDI-C8 (N,N′-Dioctyl-3,4,9,10-perylenedicarboximide) as organic semiconductor layers and LiF as gate dielectrics are studied. The electrical properties of these devices have been investigated in atmospheric conditions and under variable light exposure. Output and transfer characteristics of several photo-responsive thin film transistors using different organic materials but with the same insulating layer will be presented and the increase of drain-source current upon illumination will be discussed based on the photoconduction properties of the transistor active layer.

Fabrication of Organic Thin-Film Transistors Using Layer-by-Layer Assembly

Layer-by-layer assembly is presented as a deposition technique for the incorporation of ultrathin gate dielectric layers into thin-film transistors utilizing a highly doped organic active layer. This deposition technique enables the fabrication of device structures with a controllable gate dielectric thickness. In particular, devices with a dielectric layer comprised of poly(allylamine hydrochloride)/poly(acrylic acid) (PAH/PAA) bilayer films were fabricated to examine the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the transistor active layer. The transistor Ion/off ratio and switching speed are shown to be controlled by the gate bias, which is dependent upon the voltage applied and the number of bilayers deposited for the gate dielectric. The devices operate in the depletion mode as a result of dedoping of the active layer with the application of a positive gate bias. The depletion and recovery rate are highly dependent on the level of hydration in the film and the environment under which the device is operated. These observations are consistent with an electrochemical dedoping of the conducting polymer during operation.

Poly(alkoxyphenylene−thienylene) Langmuir−Schäfer Thin Films for Advanced Performance Transistors

Solution processed Langmuir−Schäfer and cast thin films of regioregular poly(2,5-dioctyloxy-1,4-phenylene-alt-2,5-thienylene) are investigated as transistor active layers. The study of their field-effect properties evidences that no transistor behavior can be seen with a cast film channel material. This was not surprising considering the twisted conformation of the polymer backbone predicted by various theoretical studies. Strikingly, the Langmuir−Schäfer (LS) thin films exhibit a field-effect mobility of 5 × 10-4 cm2/V·s, the highest attained so far with an alkoxy-substituted conjugated polymer. Extensive optical, morphological, and structural thin-film characterization supports the attribution of the effect to the longer conjugation length achieved in the Langmuir−Schäfer deposited film, likely due to an improved backbone planarity. This study shows that a technologically appealing deposition procedure, such as the LS one, can be exploited to significantly improve the inherently poor field-effect properties of twisted conjugated backbones. This achievement could promote the exploitation for electronic, and possibly sensing, applications of the wealth of opportunities offered by the alkoxy substitution on the phenylene units for convenient tailoring of the phenylene−thienylene backbone with molecules of chemical and biological interest.

A Lithographic Process for Integrated Organic Field-Effect Transistors

This paper reports a photolithographic process for fabricating organic field-effect transistors which provides two layers of metal with arbitrary via placement, and optionally allows for subtractive lithographic patterning of the transistor active layer. The demonstrated pentacene transistors have a field-effect mobility of 0.1/spl plusmn/0.05 cm/sup 2//(V/spl middot/s). Parylene-C is used both as the gate dielectric and an encapsulation layer which allows for subtractive lithographic patterning. Also demonstrated is a PMOS inverter without level shifting circuitry and level-restoring V/sub High/ and V/sub Low/. This work demonstrates a high definition, multilayer, integrated photolithographic process which creates organic field effect transistors suitable for use in integrated circuit applications such as a display backplanes.

Organic thin film transistors: from active materials to novel applications

In this paper, a bird's eye view of most of the organic materials employed as n-channel and p-channel transistor active layers is given along with the relevant device performances; organic thin film transistors (OTFT) operation regimes are discussed and an interesting perspective application of OTFT as multi-parameter gas sensor is proposed.