Transient Ionizing Radiation Effects Research Articles

Investigation on Transient Ionizing Radiation Effects in a 4-Mb SRAM With Dual Supply Voltages

The impact of transient ionizing radiation effects on a 4-Mb static random access memory (SRAM) circuit which has an input–output (IO) supply voltage and a core supply voltage was studied. The experimental results indicate that a longer time is required to restore minimal operating voltage for core supply voltage. Based on the 180-nm bulk CMOS technology, 3-D mode numerical simulations with technology computer-aided design (TCAD) show that the parasitic bipolar effect plays a significant role in discrepancy in the recovery process between supply voltages. This effect will be discussed in depth in this article, and the simulation results illustrate that the n-well contact has a great impact on the operation mode of parasitic bipolar. Meanwhile, the supply voltage disturbance mitigation methods are presented through improving power supply voltage and placing more n-well contacts.

TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes

The parasitic effect inside metal oxide field effect transistor regarded as the basic structure of large scale digital circuits, has long been considered as an important factor affecting the disturbance, upset and latchup of integrated circuits in pulsed γ-ray radiation environment. To investigate the turn-on mechanism of vertical parasitic effect in NMOSFET induced by pulsed γ-ray radiation, the 40 nm, 90 nm and 180 nm NMOSFET device models are constructed by TCAD and the normal electrical characteristics are calibrated. The trend of vertical parasitic triode current gain, the turn-on conditions of vertical parasitic triode and their influence on working state of NMOSFET are obtained. The simulation results are shown below. 1) The disturbance of well potential inside NMOSFET induced by pulsed γ-ray radiation is the main reason for the turn-on of vertical parasitic triode. 2) When vertical parasitic triode is turn-on, the large secondary photocurrent will be generated inside NMOSFET which will affect the working state of the transistor. 3) The current gain of vertical parasitic triode in NMOSFET decreases with the technology node decreasing. The results provide a theoretical basis for studying the transient ionizing radiation effects of electronic devices.

A transient ionizing radiation SPICE model for PDSOI MOSFET

AbstractIn this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model.

Transient ionizing radiation effects of electrocircuit system

When the devices are irradiated with the system at the transient dose rate, many of them will work at the state that all of the input signal, power supply and the photocurrent are out of the designed state. This transient effects can not be found by irradiating the device only. So transient radiation effects with -ray on an electronics system, composed of DC/DC, CPU, FPGA, et al, were investigated. The gamma pulse width was 20 ns and the dose rate was in the range of 2.8105 to 1.7107 Gy (Si)/s in the experimental study. And the function of the system and many parameters of the main devices were tested. The result of experiments showed that some of the test devices were disrupted by low level of transient radiation, but the system work was not disturbed. While the dose rates increased, all of the devices were disrupted and the system function failed. The signal originating from the transient ionizing radiation transferring from the input to the output of the device was observed.

Transient ionizing radiation effects in devices and circuits

A review and summary of over 40 years of research and development in the investigation of transient ionizing radiation effects in devices and circuits is presented. Emphasis is placed on the relationship of circuit effects to physical mechanisms at the transistor and diode level.

Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices

We have developed a dynamic model for photoelectric effect in bipolar devices exposed to a wide range of ionizing radiation intensities. We represent the stationary and dynamic photocurrents by current sources in parallel with each p-n junction. These sources include the prompt photocurrent of the depletion regions and the delayed response associated with the buildup and discharge of excess charge carriers in the quasi-neutral (q-n) regions adjacent to the junctions. The latter are described in terms of dynamic delay times for each q-n region, which can be represented by RC equivalent delay circuits. The model has been implemented in the circuit simulator AIM-Spice and has been verified by numerical simulations.

Transient Radiation Effects in SOI Memories

This paper presents the first measurements of transient radiation effects on SOI discrete devices and an LSI memory. A commercially processed LSI SOI memory, a 4K × 1 SRAM on SIMOX, was tested for SEU, and transient ionizing radiation effects as a function of bias conditions and dose rate. The SEU error rate was found to be between 1.5 and 2.5 × 10-8 errors/bit-day for the 10% worst-case orbit model. The output voltage logic upset level was greater than 1.6 × 1010 rad(Si)/sec for Vcc supply voltage variations of -10% and +20% with Vsub at -10 V. For the discrete devices and memory, the measured transient photocurrents were larger than the calculated volumetric photocurrent generated in the active device region. This increased transient response is postulated to be due to the gain of the parasitic phototransistor of the dielectrically isolated MOS device.

Transient Ionizing Radiation Effects on Baritt Diode Oscillators

The performance of a variety of BARITT diode oscillators has been measured under transient ionizing radiation conditions. Two to five milliwatt cw silicon diode oscillators (Schottky and diffused injecting junctions) were exposed to 100 nanosecond pulses of 10 MeV electrons at dose rates between 107 and 1010 rads/sec. With these oscillators, the RF power is reduced at increasing dose rates and is quenched entirely during the radiation pulse at a dose rate dependent upon junction characteristics. The RF power remains quenched after the radiation pulse for approximately 500 nanoseconds in some diodes due to charge storage. The charge storage is related to the injection efficiency of the injecting contact, increasing in duration as the injection efficiency increases. Besides this temporary stored charge, no aftereffects were observed in any of the diodes.

Transient Ionizing Radiation Effects on IMPATT Diode Oscillators

The performance of a variety of IMPATT diode oscillators has been measured under transient ionizing radiation conditions, and the results of a large signal model which agrees with experiment are presented. Five hundred milliwatt cw diode oscillators (silicon and gallium arsenide with various types of avalanching junctions) were exposed to 100 nanosecond pulses of 10 MeV electrons at dose rates between 2 × 108 and 8 × 109 rads/sec. With these oscillators, the RF power is reduced at increasing dose rates and is quenched entirely during the radiation pulse at a dose rate dependent upon the DC bias current (greater than 5 × 109 rads/sec for 500 mW oscillators in vacuum). With diodes open to air, oscillators in low Q cavities were quenched during the radiation pulse with a total dose of 500 rads. The results of a large signal theory including the effects of leakage current are presented that agree well with the RF power decrease during irradiation.

Transient Ionizing Radiation Effects in MOS/LSI

Transient ionizing radiation effects data on six types of MOS/LSI devices are presented considering variations in the pulse width of the radiation environment and circuit design of the MOS/ LSI cell. Four of the device types employed dynamic logic cells and the other two were formed with static logic cells. Transient failure levels of the dynamic arrays occurred with exposure to a total radiation dose of 1-10 rads(Si) through a time as long as 5 ms. The static logic arrays demonstrated significant transient responses at radiation levels of 108 rads(Si)/s, or transient failure of stored information with exposure to a total radiation dose of 10-50 rads(Si).

Transient ionizing radiation effects on semiconductor integrated circuits : K. E. Kells and Dr. W. C. Bowman, Proc. IEEE Symposium on “Molecular Concepts in Microelectronics”, St. Louis, May 24, 25, 26 (1965), p. 5D-1

Transient ionizing radiation effects on semiconductor integrated circuits : K. E. Kells and Dr. W. C. Bowman, Proc. IEEE Symposium on “Molecular Concepts in Microelectronics”, St. Louis, May 24, 25, 26 (1965), p. 5D-1