Transgranular Voids Research Articles

Insitu investigation of tensile deformation behaviour of cold-rolled interstitial-free high-strength steel in scanning electron microscope

The progress of tensile deformation of cold rolled interstitial-free high-strength (IFHS) steel in the as-received and 10 pct tensile pre-strained conditions has been studied through testing of miniature sized specimens in scanning electron microscope. Strength and ductility of the steel obtained through insitu tests have been compared with the macro tensile test results. The insitu test results show that the yield strength and tensile strength of miniature sized specimens are less as compared to that of macro tensile test results. But, uniform strain in case of insitu tests is higher than that obtained in case of macro tensile specimens. The insitu tests reveal that intergranular cracking of surface grains and formation of both intergranular and transgranular voids precede the final ductile fracture. The areal density of voids is found to increase with increase of Von Mises equivalent plastic strain. Under pre-strained condition void nucleation strain of the steel is found to be lower as compared to the as-received condition.

Development of references of anomalies detection on P91 material using Self-Magnetic Leakage Field (SMLF) technique

This technical paper demonstrates the successful of the application of self-magnetic leakage field (SMLF) technique in detecting anomalies in weldment of a thick P91 materials joint (1 inch thickness). Boiler components such as boiler tubes, stub boiler at penthouse and energy piping such as hot reheat pipe (HRP) and H-balance energy piping to turbine are made of P91 material. P91 is ferromagnetic material, therefore the technique of self-magnetic leakage field (SMLF) is applicable for P91 in detecting anomalies within material (internal defects). The technique is categorized under non-destructive technique (NDT). It is the second passive method after acoustic emission (AE), at which the information on structures radiation (magnetic field and energy waves) is used. The measured magnetic leakage field of a product or component is a magnetic leakage field occurring on the component’s surface in the zone of dislocation stable slipbands under the influence of operational (in-service) or residual stresses or in zones of maximum inhomogeneity of metal structure in new products or components. Inter-granular and trans-granular cracks, inclusion, void, cavity and corrosion are considered types of inhomogeneity and discontinuity in material where obviously the output of magnetic leakage field will be shown when using this technique. The technique does not required surface preparation for the component to be inspected. This technique is contact-type inspection, which means the sensor has to touch or in-contact to the component’s surface during inspection. The results of application of SMLF technique on the developed P91 reference blocks have demonstrated that the technique is practical to be used for anomaly inspection and detection as well as identification of anomalies’ location. The evaluation of this passive self-magnetic leakage field (SMLF) technique has been verified by other conventional non-destructive tests (NDTs) on the reference blocks where simulated defects/anomalies have been developed inside at the weldment. The results from the inspection test showed that the signatures of magnetic leakage field gradient distribution prove that the peak is found on the location of defect/anomaly in the reference block. It is in agreement with the evidence of anomaly that seen in the radiography test film (RT).

Spall damage of a mild carbon steel: Effects of peak stress, strain rate and pulse duration

We investigate spall damage of a mild carbon steel under high strain-rate loading, regarding the effects of peak stress, strain rate, and pulse duration on spall strength and damage, as well as related microstructure features, using gas gun plate impact, laser velocimetry, and electron backscatter diffraction analysis. Our experiments demonstrate strong dependences of spall strength on peak stress and strain rate, and its weak dependence on pulse duration. We establish numerical relations between damage and peak stress or pulse duration. Brittle and ductile spall fracture modes are observed at different loading conditions. Damage nucleates at grain boundaries and triple junctions, either as transgranular cleavage cracks or voids.

Influence of quench transfer time on microstructure and mechanical properties of 7055 aluminum alloy

The influence of quench transfer time on the microstructure and mechanical properties of 7055 aluminum alloy with and without zirconium was investigated by tensile properties test, optical microscopy, scanning electron microscopy and transmission electron microscopy. For the Zr-free alloy, the strength increases to the highest value at 20 s with transfer time, and then decreases slightly. The elongation decreases slowly with transfer time within 20 s, and more rapidly after 20 s. For the Zr-containing alloy, prolonging transfer time within 20 s results in slight decrease in the strength and elongation, and rapid drop of which is observed after 20 s. For the Zr-free alloy, prolonging transfer time can increase the percentage of intergranular fracture, which is mainly caused by wide grain boundary precipitate free zone. The failure mode of the Zr-containing alloy is modified from the predominant transgranular void growth and intergranular fracture to transgranular shear and intergranular fracture with increase in the transfer time, which is attributed to the wider grain boundary precipitate free zone and coarse equilibrium η phases in the matrix.

Surface morphological evolution on single crystal films by strong anisotropic drift diffusion under capillary and electromigration forces

The morphological evolution of voids at unpassivated surfaces and the sidewalls of single crystal metallic films is investigated via computer simulations by using a mathematical model based on fundamental postulates of irreversible thermodynamics. The effect of drift-diffusion anisotropy on the development of surface morphological scenarios is explored under the action of electromigration (EM) and capillary forces, utilizing numerous combinations of the surface texture and the direction of the applied electric field. Analytical expressions for the interconnect catastrophic failure time due to the EM-induced transgranular wedge-shaped voids, the propagation velocity of surface solitary waves, and the incubation time of the regenerative oscillatory surface waves are deduced under the severe instability regimes, by inverse normalization procedures applied to the outputs of the extensive computer simulation experiments.

Electromigration-induced surface evolution in bamboo lines with transgranular and intergranular edge voids

The evolution of a surface intersected by transgranular (TG) and intergranular (IG) edge voids under isotropic surface diffusion and electric field effects is simulated numerically under both mass-conserving and non-mass-conserving boundary conditions. A surprising similarity is found in the surface topology of transgranular voids between our non-mass-conserving model and Schimschak and Krug's [J. Appl. Phys. 87 (2000) 695] mass-conserving model. The electric field is found to slow the development of an intergranular groove along a positively tilted grain boundary (GB), and to cause thinning or thickening of grains under non-mass-conserving conditions.

Microstructural effects on fracture toughness in AA7010 plate

The influence of recrystallization and quench rate after solution treatment on the fracture toughness of 7010 aluminum plate has been studied in longitudinal-transverse (L-T) and short-longitudinal (S-L) orientations for T76-type heat treatments. Extensive fractographic analysis was carried out to identify the failure mechanisms, including simultaneous scanning electron microscope (SEM) observation of fracture surfaces and underlying microstructures. A slow quench rate was strongly detrimental because it modified the dominant failure mode from a relatively high energy primary void growth mechanism to lower energy transgranular shear and grain boundary ductile failure in the L-T and S-L orientations, respectively. Low energy failure was associated with coarse ν precipitation during the quench in both L-T and S-L orientation tests, with intragranular and intersubgranular particles contributing to L-T quench sensitivity, and intergranular particles contributing to S-L sensitivity. Partial recrystallization was generally detrimental, with recrystallized grains being shown to be a preferential crack path. The commonly supposed susceptibility of recrystallized grains to intergranular failure did not explain this behavior, particularly in fast quench materials, as recrystallized grains primarily failed by transgranular void growth from the large intermetallics with which they were intrinsically associated. Exceptional S-L orientation quench sensitivity was observed in unrecrystallized material and attributed to a synergistic interaction between heterogeneous boundary precipitation and the specific location of coarse intermetallics along grain boundaries in the unrecrystallized condition. Quantitative assessment of individual contributions to overall fracture resistance is discussed for cases where multiple failure mechanisms occur, highlighting the importance of interacting and noninteracting mechanisms.

Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects

Electromigration-induced voiding in metal interconnects in Si integrated circuits is a serious reliability concern. The microstructure of narrow interconnects subject to post-pattern anneal is expected to be bamboo-like in character. These structures are best described as chains of single crystals, with grain boundaries perpendicular to the interconnect axis. In these microstructures, two distinct types of void morphologies have been reported in Al-alloy interconnects: large, wedge shaped erosion voids (E-voids), and narrow slit-like voids (S-voids). A summarized below, electromigration experiments conducted on single-crystal Al interconnects have clearly shown that the transition of erosion voids to slit-like voids is very strongly dependent on the crystallography of the interconnect, and also that there is some inhomogeneously distributed feature which triggers S-void formation, even in single-crystal interconnects. In summary, the authors feel that the strong crystallographic dependence of the S-voids, the possible effects of the enormous mechanical stresses (in excess of 1 GPa in some cases) which can exist in such interconnects, and the stochastic nature of the development of slit-like features, have not been adequately captured in the existing models. In what follows, the authors present a model for a role that dislocation pile-ups may play in reducing the energy of transition ofmore » E-voids to S-voids, and for controlling the location of this transition.« less

Theoretical analysis of electromigration-induced failure of metallic thin films due to transgranular void propagation

Failure of metallic thin films driven by electromigration is among the most challenging materials reliability problems in microelectronics toward ultra-large-scale integration. One of the most serious failure mechanisms in thin films with bamboo grain structure is the propagation of transgranular voids, which may lead to open-circuit failure. In this article, a comprehensive theoretical analysis is presented of the complex nonlinear dynamics of transgranular voids in metallic thin films as determined by capillarity-driven surface diffusion coupled with drift induced by electromigration. Our analysis is based on self-consistent dynamical simulations of void morphological evolution and it is aided by the conclusions of an approximate linear stability theory. Our simulations emphasize that the strong dependence of surface diffusivity on void surface orientation, the strength of the applied electric field, and the void size play important roles in the dynamics of the voids. The simulations predict void faceting, formation of wedge-shaped voids due to facet selection, propagation of slit-like features emanating from void surfaces, open-circuit failure due to slit propagation, as well as appearance and disappearance of soliton-like features on void surfaces prior to failure. These predictions are in very good agreement with recent experimental observations during accelerated electromigration testing of unpassivated metallic films. The simulation results are used to establish conditions for the formation of various void morphological features and discuss their serious implications for interconnect reliability.

Effects of mechanical stress on electromigration-driven transgranular void dynamics in passivated metallic thin films

The combined effects of mechanical stress and surface electromigration on the dynamics of transgranular voids in passivated metallic thin films are analyzed based on self-consistent dynamical simulations. Depending on the strength of the electric and stress fields, void morphological instabilities can lead to film failure by propagation from the void surface of either faceted slits or finer-scale crack-like features. Most importantly, there exists a narrow range of applied stress for given strength of electric field over which slit formation can be inhibited completely.

Electromigration-induced failure of metallic thin films due to transgranular void propagation

A theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Self-consistent dynamical simulations emphasize the important roles of the anisotropy of void surface diffusivity, the strength of the applied electric field, and the void size. Our simulations predict formation of stable faceted voids, formation of wedge-shaped voids through a facet selection mechanism, as well as failure due to propagation of slitlike features from void surfaces, in excellent agreement with recent experimental observations.

Theoretical Analysis of Faceted Void Dynamics in Metallic Thin Films Under Electromigration Conditions

AbstractA theoretical analysis is presented of the electromigration-induced dynamics of transgranular voids in metallic thin films. The analysis is based on self-consistent dynamical simulations of current-driven void surface propagation coupled with the distribution of the electric field in the metallic film. The simulation predictions highlight the rich nonlinear dynamics of current-driven evolution of voids that become faceted due to the strongly anisotropic nature of surface diffusion. The numerical results are analyzed based on approximate analytical solutions to faceted void migration and a linearized theory for the morphological stability of planar void facets.

Analysis of Failure in Metallic Thin-Film Interconnects Due to Stress and Electromigration-Induced Void Propagation

AbstractA theoretical analysis is presented of the morphological evolution of transgranular voids in metallic thin films driven by capillarity, stress, and electromigration. This highly nonlinear and complex dynamics is analyzed through self-consistent numerical simulations based on a two-dimensional phenomenological model of a passivated interconnect. The analysis follows a systematic exploration of a six-dimensional parameter space determined by the strengths of the electric and stress fields, surface diffusion anisotropy, and the size of the void. Our simulation results reveal a very rich nonlinear dynamical picture of void morphological evolution mechanism, including faceting, wedge void and faceted slit formation through a facet selection process, and soliton-like surface wave propagation. These results are in very good agreement with experimental observations and have important implications for interconnect failure.

Modeling of Failure in Metallic Thin Films Induced by Stress and Electromigration: A Multiscale Computational Analysis

AbstractA common failure mechanism in metallic thin-film interconnects is void propagation driven by electric fields and thermomechanical stresses. In this paper, a multiscale computational analysis is presented for predictive modeling of transgranular void dynamics. The modeling approach is hierarchical and involves atomistic simulations for property database development, molecular-dynamics simulations for understanding of void-tip mechanisms, and self-consistent mesoscopic simulations based on boundary-element methods and techniques for moving boundary propagation. An extremely rich void dynamical behavior is predicted, which includes faceting, facet selection, propagation of slits from the void surface, as well as formation of fine-scale crack-like features on the void surface, in agreement with recent experimental data.

Effect of impurity hydrogen on the deformation and fracture in an Al-5 mass Pct Mg alloy

Air-melted and argon-melted Al-5 mass pct Mg alloy specimens containing impurity hydrogen of 0.27 and 0.04 mass ppm, respectively, were tensile-tested at ambient temperature. The ductility and fracture processes were compared in the two specimens, and hydrogen evolution behavior during the test was also compared using a special testing machine equipped with a mass spectrometer and ultra high vacuum chamber. The air-melted specimen, containing a higher amount of hydrogen, had less reduction in area (RA) and a higher amount of evolved hydrogen gas on fracture. This implied that the impurity hydrogen was in the transgranular voids, which appeared as dimples on the fracture surface. Fracture process analysis involving fractography, load-displacement curve analysis, and optical microscopy on a cross section of the deformed test piece demonstrated that the impurity hydrogen reduces nonuniform elongation by accelerating the nucleation of transgranular voids produced under triaxial tensile stress after necking. Hydrogen evolution was also detected corresponding to each load drop in the serrated flow of the air-melted specimen, supporting the idea that hydrogen atoms are transported with moving dislocations.

Theoretical Analysis of Electromigration-Induced Failure of Metallic Thin Films

ABSTRACTA comprehensive theoretical analysis is presented of the failure of metallic thin films due to electromigration-induced morphological evolution of transgranular voids. Fully self-consistent dynamical simulations emphasize the important effects on void dynamics of the surface diffusivity anisotropy, together with the strength of the applied electric field and the void size. The simulation results are discussed in the context of an approximate linear stability theory. Our simulations predict formation of wedge-shaped voids, as well as failure due to propagation of slit-like features emanating from void surfaces, in excellent agreement with recent experimental observations.

The metallurgical control of electromigration failure in narrow conducting lines

Electromigration is a serious potential source of failure in the narrow, thin-film Al-Cu conductors used in modern microelectronic devices. The problem has become more acute as line widths have shrunk to below one micrometer, creating lines with quasi-bamboo microstructures. The usual mechanism of internal electromigration failure in such lines involves the formation of a transgranular void across a bamboo grain at the upstream end of a long, polygranular segment, preceded by the depletion of copper from both the polygranular segment and the upstream bamboo grain. At least three metallurgical mechanisms are available to inhibit this failure mechanism and improve the useful lifetime of the line, Each of these methods has been demonstrated in the laboratory environment.

Analysis of damage formation and propagation in metallic thin films under the action of thermal stresses and electric fields

A quantitative analysis is presented of void formation, morphological stability, and evolution in metallic thin films, which are problems that underlie serious reliability issues in interconnections used in integrated circuits. The analysis is based on the coupling of bulk and interfacial mass transport phenomena with elastic deformations and current stressing. The formation and growth of intergranular voids in bamboo-structure conductor lines due to stresses that develop during processing is investigated. The investigation is aided by self-consistent simulation of bulk and grain-boundary diffusional processes using bicrystal models with elastic grains. A systematic analysis is presented of the morphological evolution of transgranular voids in passivated and unpassivated aluminum lines under current densities that are typical of electromigration testing. The effects of the electric field and surface properties on the morphological stability of voids are examined and morphologies that bifurcate from rounded or wedge-like void shapes are predicted. The theoretical results are discussed in the context of experimental data of void propagation under electromigration conditions.

Dynamics of transgranular voids in metallic thin films under electromigration conditions

A theoretical analysis is presented for the morphological evolution and stability of transgranular wedge-shaped voids in conductor lines with bamboo grain structure under an applied electric field. A linear stability analysis identifies void shapes that become unstable with respect to the growth of perturbations with wavelengths longer than a critical wavelength. The analysis predicts a critical wavelength that is consistent with experimental observations in unpassivated aluminum lines. The predicted changes in shape during the morphological evolution of the void surfaces are in agreement with the experimental observations.

Crystal plasticity simulations of thermal stresses in thin-film aluminum interconnects

Thermal stresses that develop in aluminum interconnects upon cooling from an annealing temperature are investigated using crystal plasticity theory. The crystal plasticity model is implemented assuming either isotropic hardening or a physically based hardening model developed for single crystals. The dependence of the predicted thermal stresses on crystal orientation and on interconnect aspect ratio is examined. The results are compared with recent observations of electromigration-induced transgranular voids to ascertain the contribution of the thermal stresses in the failure of aluminum interconnects. The analysis clearly demonstrates the necessity of accounting for all slip systems when modeling the effects of texture in single-crystal thin films. In addition, the calculations suggest that proper consideration of the hardening description is necessary for accurate predictions of thermal stresses.