Traditional Semiconductor Research Articles

Zn/Pt dual-site single-atom driven difunctional superimposition-augmented sonosensitizer for sonodynamic therapy boosted ferroptosis of cancer

Sonodynamic therapy (SDT) as a non-invasive antitumor strategy has been widely concerned. However, the rapid electron (e-) and hole (h+) recombination of traditional inorganic semiconductor sonosensitizers under ultrasonic (US) stimulation greatly limits the production of reactive oxygen species (ROS). Herein, we report a unique Zn/Pt dual-site single-atom driven difunctional superimposition-augmented TiO2-based sonosensitizer (Zn/Pt SATs). Initially, we verify through theoretical calculation that the strongly coupled Zn and Pt atoms can assist electron excitation at the atomic level by increasing electron conductivity and excitation efficiency under US, respectively, thus effectively improving the yield of ROS. Additionally, Zn/Pt SATs can significantly enhance ferroptosis by producing more ROS and sonoexcited holes under US stimuli. Therefore, the establishment of dual-site single-atom system represents an innovative strategy to enhance SDT in cancer model of female mice and provides a typical example for the development of inorganic sonosensitizer in the field of antitumor therapy.

Anchoring Ni atomic clusters on yolk-shell In2O3 microspheres for highly sensitive, ultra-rapid responding/recovering ppb-level NO2 detections

Highly sensitive, sophisticated and rapidly responding/recovering NO2 sensors are of a pressing demand across various modern applications. However, traditional metal oxide semiconductors (MOSs), such as In2O3, often grapple with issues such as diminished sensitivity and tardy responding/recovering. To address these challenges, we present a novel, simultaneous enhancement strategy centered around Ni atomic clusters (NiAC) integrated into In2O3 yolk-shell microspheres. This innovative structural and compositional design not only enhances NO2 adsorption thermodynamics but also improves kinetics reacting rate. The optimized heterostructured NiAC-In2O3 exhibits exceptional NO2 sensing performances with high response (454.62 to 10 ppm NO2), instantaneous responding/recovering dynamics (1/3 s), and an impressively ultra-low detection limit (1 ppb) at 200 ℃. Reaction kinetics calculation, finite element method (FEM) simulations and further validation through In-situ diffuse reflection infrared Fourier transform spectroscopy (In-situ DRIFTS) and temperature-programmed desorption (TPD) analyses confirms the accelerated NO2 adsorption/desorption dynamics, enhanced NO2 dissociation and trace-concentration NO2 molecule capturing capability attributed to NiAC. Considering these merits, The fabricated NiAC-In2O3 ensures high-precise, instantaneous, ppb-level NO2 detections.

Highly Stable Biotemplated InP/ZnSe/ZnS Quantum Dots for In Situ Bacterial Monitoring.

Despite their unique optical and electrical characteristics, traditional semiconductor quantum dots (QDs) made of heavy metals or carbon are not ideally suited for biomedical applications. Cytotoxicity and environmental concerns are key limiting factors affecting the adoption of QDs from laboratory research to real-world medical applications. Recently, advanced InP/ZnSe/ZnS QDs have emerged as alternatives to traditional QDs due to their low toxicity and optical properties; however, bioconjugation has remained a challenge due to surface chemistry limitations that can lead to instability in aqueous environments. Here, we report water-soluble, biotemplated InP/ZnSe/ZnS-aptamer quantum dots (QDAPTs) with long-term stability and high selectivity for targeting bacterial membrane proteins. QDAPTs show fast binding reaction kinetics (less than 5 min), high brightness, and high levels of stability (3 months) after biotemplating in aqueous solvents. We use these materials to demonstrate the detection of bacterial membrane proteins on common surfaces using a hand-held imaging device, which attests to the potential of this system for biomedical applications.

Förster Resonance Energy Transfer and Enhanced Emission in Cs4PbBr6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications.

Encapsulating Cs4PbBr6 quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs4PbBr6 ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs4PbBr6 pseudo-spherical quantum dots is quenched and is dominated with Pb2+ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs4PbBr6 ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb2+ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs4PbBr6 quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials.

Regulation of receptor function in NiCo2O4-SnO2 heterojunction for H2S detection at room temperature

In recent years, the World Health Organization has increasingly emphasized air quality in production environments, leading to heightened societal demands for monitoring of pollutant gases at room temperature. Traditional semiconductor gas-sensitive materials, such as tin oxide (SnO2), have their gas-sensing performance largely limited by their receptor functions, resulting in common issues like low response and poor recovery at room temperature. Spinel-type bimetallic oxides, such as nickel cobaltate (NiCo2O4), offer a unique solution due to their rich adsorption sites on the surface, which provide distinctive receptor functions for detecting toxic gases at room temperature. Herein, NiCo2O4 is synthesized via a one-step hydrothermal method, with a porous spherical cluster structure, and combined with SnO2 to form a heterojunction. The NiCo2O4-SnO2 heterojunction film gas sensor exhibits excellent gas-sensing performance for H2S at room temperature, including high response, short response time, good repeatability, and selectivity. Additionally, the unique receptor functions of the NiCo2O4 were analyzed through first-principles calculations, revealing a semiconductor p-n conversion phenomenon in the presence of H2S gas. The composite also demonstrates a conversion from p-n heterojunction to n-n homojunction during the sensing process, enhancing its gas-sensing performance. This work not only addresses the receptor function limitations of traditional gas-sensitive semiconductor but also provides a feasible approach for controlling carrier types in semiconductors.

Trinuclear iron-oxo cocatalyst regulating new electron transfer pathway in Pt loaded bismuth oxychloride for efficient photocatalytic hydrogen production

BiOCl, a traditional p-type semiconductor, finds extensive application in photocatalytic oxidation and degradation, whereas it is less common in photocatalytic water splitting and hydrogen production. Here, the photocatalytic hydrogen production performance of black BiOCl has been examined by the introduction of noble metal platinum and cocatalyst trinuclear iron-oxo cluster. During the 5-h photocatalytic process, the established system significantly augments the hydrogen production efficiency of black BiOCl by an estimated factor of 8.53. Under illumination, trinuclear iron-oxo clusters provide electron recombination with holes in the valence band of the catalyst, thereby increasing the utilization of photogenerated electrons. Additionally, since the specific energy level structure has a significant impact on the cocatalyst function, trinuclear iron-oxo clusters can be suitable in a variety of photocatalytic systems. This new endeavor might present creative design approaches and low-cost cocatalyst alternatives for the photocatalytic hydrogen evolution from the water splitting of conventional p-type semiconductor materials.

An x-ray computed tomography gas hydrate in situ formation and seepage simulation device.

Nano-CT (computed tomography) technology enables high-resolution imaging and scanning of hydrate dissociation processes in porous media at submicron-scale resolution. However, due to the inability of nano-CT to withstand large torque, the traditional semiconductor cooling method cannot be used for in situ hydrate formation, resulting in the hindering of the effective operation of seepage simulators. Therefore, in this paper, a nano-CT-based in situ hydrate formation and seepage simulator are specially designed, and the torque and entanglement problems existing in traditional experimental devices can be solved by using a pipeline placed above the device and a built-in seepage line. The device is able to offer an improved depiction of hydrates in porous media and the effect of the seepage process on the three-dimensional distribution of hydrates. The future applications of this device are expected to provide novel insights into the effects of gas-water transport and hydrate storage patterns during gas hydrate exploitation.

High sensitivity of nitrobenzene on the ZnO monolayer and the role of strain engineering

Volatile organic compounds (VOCs) emissions have been a recurring problem that has challenged research centers to find new ways to monitor them. From this perspective, this work investigates nitrobenzene sensing through computational simulations, a well-known toxic compound, using the strained and strain-free two-dimensional (2D) ZnO monolayer, a traditional metal oxide semiconductor (MOS). The results indicate that nitrobenzene is adsorbed via strong physisorption on the 2D ZnO and maintains interaction with the sensor under thermal stimulus (500 K), as demonstrated via ab initio molecular dynamics (AIMD) simulations. The nitrobenzene also changes the ZnO band gap energy from 4.59 to 1.85 eV and shifts 0.35 eV the work function value. Under biaxial strain, the nitrobenzene becomes chemisorbed on the ZnO monolayer. Also, remarkable conductivity changes are observed with the nitrobenzene adsorption on the strained ZnO. Excellent values of sensitivity are found, 2.29 × 1023, 8.11 × 1022 and 2.80 × 1016 for strain-free ZnO and the maximum compressed and stretched ZnO monolayer, respectively. Short recovery times of 1.16 × 10−4 s (T = 300 K) and 6.89 × 10−8 s (T = 500 K) are also found for strain-free ZnO monolayer, indicating a great reusability for nitrobenzene. Consequently, the ZnO monolayer can be used to detect nitrobenzene.

High-Contrast Thermochromism in Room-Temperature Transparent Layered Perovskite PEA2PbBr4 with a High Temperature-Induced Bandgap Change Rate of 0.8 meV/K.

Two-dimensional organic-inorganic hybrid layered perovskites have emerged as a new generation of optoelectronic materials. However, the thermochromism in organic-inorganic hybrid layered perovskites has been rarely explored in depth. A further understanding of the mechanism is necessary and favorable for the application. Here, transparent centimeter-sized single crystals of the organic-inorganic hybrid layered perovskite (C6H5C2H4NH3)2PbBr4 (PEA2PbBr4) were synthesized using an improved evaporation method. As a typical organic-inorganic hybrid layered perovskite, the PEA2PbBr4 single crystal shows high-contrast and progressive thermochromism exhibiting a change from colorlessness and transparency to lemon yellow in a wide temperature range of 200-450 K. Based on the calculation through the Varshni equation, the temperature-induced bandgap change rate directly associated with the high-contrast thermochromism of PEA2PbBr4 reaching 0.8 meV/K. This value is higher than that of many three-dimensional perovskites and traditional IV-III semiconductors. Furthermore, the temperature-dependent 193 nm photoluminescence spectra suggest that this high temperature-induced bandgap change rate of PEA2PbBr4 is a result of the competitive interaction between lattice thermal expansion and electron-phonon coupling (Fröhlich coupling coefficient ΓLO = 2.215). Based on the characteristics introduced above, PEA2PbBr4 as an organic-inorganic hybrid layered perovskite has a better performance in achieving the balance between high-contrast and high room-temperature transmittance. Therefore, PEA2PbBr4 is a material with great potential in applications like temperature-indicating labels. This work provides valuable insights into the thermochromism of layered perovskites, offering a new material system and approach for developing thermochromic materials with higher sensitivity and efficiency.

Unveiling the Synergistic Role of Ferroelectric Polarization and Z‐Scheme Heterojunction in Bi2Fe4O9/Carbon‐Deficient g‐C3N4 for Enhanced Methylene Blue Degradation Efficiency

ABSTRACTEnhancing the efficiency of charge carrier separation is crucial for improving the performance of photocatalysts, thereby offering more effective solutions to energy and environmental pollution challenges. In this study, a carbon‐deficient ultra‐thin porous g‐C3N4 (Vc‐UPCN) was synthesized and subsequently was integrated with Bi2Fe4O9 (BFO) using a sonochemical self‐assembly technique, a Bi2Fe4O9/Vc‐UPCN (BC) photocatalyst featuring a Z‐scheme heterojunction. The BC catalyst was subjected to corona poling treatment to obtain BCp, which possesses an intrinsic electric field. Compared with pure BFO and Vc‐UPCN, the BC heterojunction exhibited higher photo‐generated electron–hole separation efficiency and photodegradation ability. Upon introduction of corona polarization, the photocatalytic performance of BC was further enhanced. Specifically, BCp‐15 (BFO/BC mass fraction = 15) achieved complete degradation of methylene blue (MB) within 30 min. BCp‐15 demonstrated that its degradation efficiency for MB was 1.28 times higher than that of BC‐15, 1.85 times higher than that of Vc‐UPCN, and impressive 7.69 times higher than that of pure BFO. The coupling effect of the heterojunction and ferroelectric polarization significantly improved the separation efficiency of photo‐generated carriers in BCp. This study is expected to provide a reference for the synergistic application of heterojunction and ferroelectric polarization in traditional semiconductor photocatalysis.

Atomic-Scale Characterization of Dilute Dopants in Topological Insulators via STEM-EDS Using Registration and Cell Averaging Techniques.

Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb2Te3 crystal. More importantly, the methodology developed in this study extends beyond Mn-doped Sb2Te3 to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.

Advancement in Photocatalyst and Piezophotocatalyst Micromotor for Environmental Remediation: A Concise Review

This review analyses recent advancements in the synthesis and environmental applications of photocatalysts and piezophotocatalysts, pivotal for organic pollutant degradation and water remediation. Traditional semiconductor photocatalysts often face rapid electron-hole recombination and limited visible light absorption. Innovations have led to the development of semiconductor heterojunctions that enhance photocatalytic efficiency by improving charge separation and expanding light absorption. This review emphasizes semiconductor-semiconductor and semiconductor-metal interfaces, which significantly improve photocatalytic performance. Additionally, piezophotocatalysts have emerged, utilizing mechanical energy to augment chemical reactions, thereby increasing efficiency and applicability under various conditions. The review also highlights the role of photocatalyst-based microrobots in targeted water treatment, utilizing local chemical energy for precise operations. These advancements showcase the potential of photocatalytic and piezophotocatalytic technologies in environmental sustainability, highlighting current trends and future prospects for effective environmental remediation.

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy.

In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10-4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 µm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm-2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.

Thin Ga2O3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing.

Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates precise engineering of material properties and scalable manufacturing processes. The ability to oxidize Si to form silicon dioxide (SiO2) was crucial for the adoption of Si in modern technologies. Here, we report on the thermal oxidation of the 2DSEM gallium selenide (GaSe). The nanometer-thick layers are grown by molecular beam epitaxy on transparent sapphire (Al2O3) and feature a centro-symmetric polymorph of GaSe. Thermal annealing of the layers in an oxygen-rich environment promotes the chemical transformation and full conversion of GaSe into a thin layer of crystalline Ga2O3, paralleled by the formation of coherent Ga2O3/Al2O3 interfaces. Versatile functionalities are demonstrated in photon sensors based on GaSe and Ga2O3, ranging from electrical insulation to unfiltered deep ultraviolet optoelectronics, unlocking the technological potential of GaSe nanostructures and their amorphous and crystalline oxides.

(Invited) Dynamics of Photoluminescence in Mn-Doped Pb-Halide Perovskite Nanocrystals

Nanocrystals of lead halide perovskites have been shown to have extraordinary photoluminescence properties, spanning the entire visible range achieved by the composition tuning via solid solutions at the halide site. Taking cues from Mn doping of traditional Group II-VI semiconductor quantum dots, Mn doping of the lead halide perovskites has been extensively explored by the community, establishing intense Mn-dopant induced emission that is significantly Stokes shifted from the excitonic emissions of the host. While all reports agree on the essential features of this emission, such as the peak position and the width of the Mn photoluminescence, there appears to be little agreement on the microscopic processes by which the host sensitizes Mn following its photoexcitation and the steps that control the deexcitation leading to the Mn emission. There are even reports of disagreement between different reports on the temperature dependence of the Mn emission and its origin. I shall discuss the present status of this field and establish, with the help of new experimental data as well as the already reported ones, what appears to be the microscopic processes controlling the excited dynamics in the Mn-doped lead halide perovskites.

Metal-Organic Framework with Dual Excitation Pathways as Efficient Bifunctional Catalyst for Photo-assisted Li-O2 Batteries.

Li-O2 batteries (LOBs) have sparked significant interest due to their fascinating high theoretical energy density. However, the large overpotential for the formation and oxidation of Li2O2 during charge and discharge process seriously hinders the further development and application of LOBs. In this work, metal-organic frameworks (MOFs) with different metal clusters (Fe, Ti, Zr) are successfully synthesized, and they are employed as the photoelectrodes for the photo-assisted LOBs. The special dual excitation pathways of Fe-MOF under illumination and the superior separation efficiency of photocarriers, which significantly enhance the activation of O2/Li2O2, improving the catalytic activity of oxygen reduction reaction and oxygen evolution reaction. Moreover, compared to traditional inorganic semiconductor crystals, Fe-MOF exhibits large specific surface area and excellent O2 adsorption ability. Therefore, the LOB with Fe-MOF as the cathode exhibits large specific capacity, ultralow charge/discharge overpotential of 0.22V at 0.05mA cm-2 and excellent stability of 195 cycles under illumination. This study provides an environmentally friendly and highly efficient photocatalyst for LOBs, and a new strategy for designing photoelectrodes.

Anisotropic Dual S‐Scheme Heterojunctions Mimic Natural Photosynthetic System for Boosting Photoelectric Response

AbstractThe design of heterojunctions that mimic natural photosynthetic systems holds great promise for enhancing photoelectric response. However, the limited interfacial space charge layer (SCL) often fails to provide sufficient driving force for the directional migration of inner charge carriers. Drawing inspiration from the electron transport chain (ETC) in natural photosynthesis system, we developed a novel anisotropic dual S‐scheme heterojunction artificial photosynthetic system composed of Bi2O3−BiOBr−AgI for the first time, with Bi2O3 and AgI selectively distributed along the bicrystal facets of BiOBr. Compared to traditional semiconductors, the anisotropic carrier migration in BiOBr overcomes the recombination resulting from thermodynamic diffusion, thereby establishing a potential ETC for the directional migration of inner charge carriers. Importantly, this pioneering bioinspired design overcomes the limitations imposed by the limited distribution of SCL in heterojunctions, resulting in a remarkable 55‐fold enhancement in photoelectric performance. Leveraging the etching of thiols on Ag‐based materials, this dual S‐scheme heterojunction is further employed in the construction of photoelectrochemical sensors for the detection of acetylcholinesterase and organophosphorus pesticides.

Anisotropic Dual S-Scheme Heterojunctions Mimic Natural Photosynthetic System for Boosting Photoelectric Response.

The design of heterojunctions that mimic natural photosynthetic systems holds great promise for enhancing photoelectric response. However, the limited interfacial space charge layer (SCL) often fails to provide sufficient driving force for the directional migration of inner charge carriers. Drawing inspiration from the electron transport chain (ETC) in natural photosynthesis system, we developed a novel anisotropic dual S-scheme heterojunction artificial photosynthetic system composed of Bi2O3-BiOBr-AgI for the first time, with Bi2O3 and AgI selectively distributed along the bicrystal facets of BiOBr. Compared to traditional semiconductors, the anisotropic carrier migration in BiOBr overcomes the recombination resulting from thermodynamic diffusion, thereby establishing a potential ETC for the directional migration of inner charge carriers. Importantly, this pioneering bioinspired design overcomes the limitations imposed by the limited distribution of SCL in heterojunctions, resulting in a remarkable 55-fold enhancement in photoelectric performance. Leveraging the etching of thiols on Ag-based materials, this dual S-scheme heterojunction is further employed in the construction of photoelectrochemical sensors for the detection of acetylcholinesterase and organophosphorus pesticides.

Quantification of the strong, phonon-induced Urbach tails in β-Ga2O3 and their implications on electrical breakdown

In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron–phonon coupling. This limits mobility through phonon scattering, localizes carriers via polarons and self-trapping, broadens optical transitions via dynamic disorder, and modifies the breakdown field. Herein, we use polarized optical transmission spectroscopy from 77 to 633 K to investigate the Urbach energy (Eu) for many orientations of Fe- and Sn-doped β-Ga2O3 bulk crystals. We find Eu values ranging from 60 to 140 meV at 293 K and that static (structural defects plus zero-point phonons) disorder contributes more to Eu than dynamic (finite temperature phonon-induced) disorder. This is evidenced by lack of systematic Eu anisotropy, and Eu correlating more with x-ray diffraction rocking-curve broadening than with Sn-doping. The lowest measured Eu are ∼10× larger than for traditional semiconductors, pointing out that band tail effects need to be carefully considered in these materials for high field electronics. We demonstrate that, because optical transmission through thick samples is sensitive to sub-gap absorption, the commonly used Tauc extraction of a bandgap from transmission through Ga2O3 >1–3 μm thick is subject to errors. Combining our Eu(T) from Fe-doped samples with Eg(T) from ellipsometry, we extract a measure of an effective electron–phonon coupling that increases in weighted second order deformation potential with temperature and a larger value for E||b than E||c. The large electron–phonon coupling in β-Ga2O3 suggests that theories of electrical breakdown for traditional semiconductors need expansion to account not just for lower scattering time but also for impact ionization thresholds fluctuating in both time and space.

Extraordinary photoexcitation of semimetal 1T'-MoTe2 inducing ultrafast charge transfer in lateral 2D homojunction

Exploring novel and more efficient photoexcitation transition mechanisms in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for the advancement of high-performance optoelectronic devices. In this study, an extraordinary photoluminescence (PL) phenomenon is discovered that originates from a vertical transition between specific bands in the X-point energy valley of K-space in multilayer Weyl semi-metal monoclinic (1T') MoTe2 without a gap structure. This effective transition is independent of the bandgap and is unaffected by the number of layers in 1T'-MoTe2, breaking the limitations of traditional TMDCs semiconductor materials and promoting the development of advanced two-dimensional (2D) semimetal-based optoelectronic devices. In a lateral multilayer 1T'-MoTe2-2H hetero-phase homojunction, a record ultrafast transfer of photogenerated charges up to 25 fs is achieved. The highly efficient interband transition, small conduction band energy level difference (less than 100 meV), and exceptionally strong e-p coupling synergistically promote the ultrafast transfer of photo-generated charges. Together with the merits of multilayer 1T'-MoTe2 such as higher carrier densities and lower resistance, these findings open the door to potentially ultra-high performance optoelectronic applications.