Topological Insulator Thin Films Research Articles

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6.

This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10-107 Hz) and high-frequency (0.5-2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

Raman scattering spectroscopy of MBE grown thin film topological insulator Bi2-xSbxTe3-ySey.

BSTS epitaxial thin film topological insulators were grown using the MBE technique on two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. The crystallographic properties of BSTS films were investigated via X-ray diffraction, which showed the strongest reflections from the (0 0 l) facets corresponding to the rhombohedral phase. Superior epitaxial growth, homogeneous thickness, smooth surfaces, and larger unit cell parameters were observed for the films grown on the Si substrate. Polarization dependent Raman spectroscopy showed a weak appearance of the Ag mode in cross--polarized geometry. In contrast, a strong Eg mode was observed in both parallel and cross-polarized geometries which correspond to the rhombohedral crystal symmetry of BSTS films. A redshift of Ag and Eg modes was observed in the Raman spectra of BSTS films grown on the Si substrate, compared to those on SiC/graphene, which was directly associated with the unit cell parameter and composition of the films. Raman spectra showed four fundamental modes with asymmetric line shape, and deconvolution of the peaks resulted in additional modes in both the BSTS thin films. The sum of relative ratios of linewidths of fundamental modes (Ag and Eg) of BSTS films grown on Si substrate was lower, indicating a more ordered structure with lower contribution of defects as compared to BSTS film grown on SiC/graphene substrate.

Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1−xSbx)2Te3 topological insulator thin films

Optical helicity provides us with an effective means to control the helicity-dependent photocurrent in the spin-momentum-locked surface states of topological insulators (TIs). Also, the TIs show potential in polarization detection as an intrinsic solid-state optical chirality detector for easier integration and fabrication. However, the complex photoresponses with the circular photogalvanic effect, the linear photogalvanic effect, and the photon drag effect in the TIs prevent them from direct chirality detection of the elliptically polarized light. Here, by fitting with the theoretical models to the measured photocurrents, the microscopic origin of different components of the helicity-dependent photocurrent has been demonstrated. We show a comprehensive study of the helicity-dependent photocurrent in (Bi1−xSb x )2Te3 thin films of different thicknesses as a function of the light incident angle and the gate-tuned chemical potential. The observation of the light incident angle dependence of the helicity-dependent photocurrent provides us with a polarization detection strategy using a TI thin film without the use of any additional optical elements, and the detection accuracy can be enhanced by gate tuning. Additionally, the Stokes parameters can be extracted by arithmetic operation of photocurrents measured with different incident angles and gating voltages for complete characterization of the polarization states of a light beam. Using this means, we realize the polarization detection and the Stokes parameters analysis with a single device. Our work provides an alternative solution to develop miniaturized intrinsic polarization-sensitive photodetectors.

Magneto-optical transport of thin film topological insulators with structure inversion asymmetry

Magneto-optical transport of thin film topological insulators with structure inversion asymmetry

Majorana Corner Modes and Flat-Band Majorana Edge Modes in Superconductor/Topological-Insulator/Superconductor Junctions

Recently, superconductors with higher-order topology have stimulated extensive attention and research interest. Higher-order topological superconductors exhibit unconventional bulk-boundary correspondence, thus allow exotic lower-dimensional boundary modes, such as Majorana corner and hinge modes. However, higher-order topological superconductivity has yet to be found in naturally occurring materials. We investigate higher-order topology in a two-dimensional Josephson junction comprised of two s-wave superconductors separated by a topological insulator thin film. We find that zero-energy Majorana corner modes, a boundary fingerprint of higher-order topological superconductivity, can be achieved by applying magnetic field. When an in-plane Zeeman field is applied to the system, two corner modes appear in the superconducting junction. Furthermore, we also discover a two-dimensional nodal superconducting phase which supports flat-band Majorana edge modes connecting the bulk nodes. Importantly, we demonstrate that zero-energy Majorana corner modes are stable when increasing the thickness of topological insulator thin film.

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in Bi2Se3 ultrathin films. The thickness-dependent position of the Dirac point and the magnitude of the mass gap are discussed in terms of the Hartree approximation and the self-consistent gap equation. We find that for thicknesses below 6 quintuple layers, the magnitude of the mass gap is in good agreement with the experimental results. Our work provides a more accurate means of describing and predicting the behaviour of quasi-particles in ultrathin topological insulator films and stacked topological systems.

Low-damage electron beam lithography for nanostructures on Bi2Te3-class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi2Se3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

Quantum size effects and transport properties of Bi2(Te1-xSex)3 3D-topological insulator thin films

In this work, it was established that the room-temperature thickness (d = 16–207 nm) dependences of the Seebeck coefficient, Hall coefficient, and electrical conductivity in n-Bi2(Te0.9Se0.1)3 topological insulator thin films grown on glass substrates, in the thickness range of d = 16–85 nm exhibit an undamped oscillatory behavior with a large amplitude and are well approximated by a harmonic function with a period Δd=(8.0 ± 0.5)nm. The anionic substitution leads to some changes in the quantum size effects manifestation. The experimental results are consistent with theoretical calculations of Δd based on the infinitely deep potential well model. A sustained character of the oscillations is attributed to topologically protected surface states.

Thermal transport in multiple Majorana edge states of hybrid topological superconductor junctions

The hybrid topological superconductor (TSC) with multiple Majorana edge states can be formed in a system where a magnetic topological insulator (MTI) thin film is coupled with two s-wave superconductors in proximity. The band structure and thermal transport properties of the hybrid TSC hosting chiral and helical Majorana edge states are investigated. By using the nonequilibrium Green’s function method combined with the Landauer–Büttiker formula, the scattering coefficients (i.e., the normal tunneling T, the local Andreev reflection TLAR, the crossed Andreev reflection TCAR) and two-terminal electric thermal conductance κe are calculated. With the change of the exchange field Mz, the system goes through a series of topological phase transitions. The chiral Majorana edge states, the helical Majorana edge states and the multiple Majorana edge states possessing both chiral and helical edge modes are induced at the boundary of TSC. At the boundary of the central TSC, a single Majorana fermion edge state is equivalent to half an ordinary fermion to carry heat, leading to the generation of a half-integer quantized thermal conductance plateau. Thus, half-integer (i.e., 1/2, 3/2) and integer (i.e., 1, 2) quantized thermal conductance plateaus appear in different topological phases. These quantized plateaus that survive well over a certain range of temperatures can be used experimentally to detect chiral and helical Majorana fermions.

Floquet engineering of magnetism in topological insulator thin films

Dynamic manipulation of magnetism in topological materials is demonstrated here via a Floquet engineering approach using circularly polarized light. Increasing the strength of the laser field, besides the expected topological phase transition (PT), the magnetically doped topological insulator thin film also undergoes a magnetic PT from ferromagnetism to paramagnetism, whose critical behavior strongly depends on the quantum quenching. In sharp contrast to the equilibrium case, the non-equilibrium Curie temperatures vary for different time scale and experimental setup, not all relying on change of topology. Our discoveries deepen the understanding of the relationship between topology and magnetism in the non-equilibrium regime and extend optoelectronic device applications to topological materials.

Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films

To date, the quantum anomalous Hall effect has been realized in chromium (Cr)- and/or vanadium(V)-doped topological insulator (Bi,Sb)2Te3 thin films. In this work, we use molecular beam epitaxy to synthesize both V- and Cr-doped Bi2Te3 thin films with controlled dopant concentration. By performing magneto-transport measurements, we find that both systems show an unusual yet similar ferromagnetic response with respect to magnetic dopant concentration; specifically the Curie temperature does not increase monotonically but shows a local maximum at a critical dopant concentration. We attribute this unusual ferromagnetic response observed in Cr/V-doped Bi2Te3 thin films to the dopant-concentration-induced magnetic exchange interaction, which displays evolution from van Vleck-type ferromagnetism in a nontrivial magnetic topological insulator to Ruderman-Kittel-Kasuya-Yosida (RKKY)-type ferromagnetism in a trivial diluted magnetic semiconductor. Our work provides insights into the ferromagnetic properties of magnetically doped topological insulator thin films and facilitates the pursuit of high-temperature quantum anomalous Hall effect.

Strained topological insulator spin field effect transistor

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades. These transistors are typically implemented by modulating the spin orbit interaction in the transistor’s channel with a gate voltage, which causes gate-controlled spin precession of the current carriers, and that modulates the channel current flowing between the ferromagnetic source and drain contacts to implement transistor action. Here, we introduce a new concept for a spin field effect transistor which does not exploit spin-orbit interaction. Its channel is made of the conducting surface of a strained three dimensional topological insulator (3D-TI) thin film and the transistor function is elicited by straining the channel region with a gate voltage (using a piezoelectric under-layer) to modify the energy dispersion relation, or the Dirac velocity, of the TI surface states. This rotates the spins of the carriers in the channel and that modulates the current flowing between the ferromagnetic source and drain contacts to realize transistor action. We call it a strained-topological-insulator-spin-field-effect-transistor, or STI-SPINFET. Its conductance on/off ratio is too poor to make it useful as a switch, but it may have other uses, such as an extremely energy-efficient stand-alone single-transistor frequency multiplier.

Electronic Spectrum Features under the Transition from Axion Insulator Phase to Quantum Anomalous Hall Effect Phase in an Intrinsic Antiferromagnetic Topological Insulator Thin Film

In this paper, we investigate the electron topological states in a thin film of intrinsic antiferromagnetic topological insulator, focusing on their relationship with the magnetic texture. We consider a model for the film with an even number of septuple-layer blocks, which is subject to transition from the phase of an axion insulator to the phase of quantized Hall conductivity under an external magnetic field. In the continuum approach, we model an effective two-dimensional Hamiltonian of the thin film of a topological insulator with non-collinear magnetization, on the basis of which we obtain the energy spectrum and the Berry curvature. The analysis of topological indices makes it possible to construct a topological phase diagram depending on the parameters of the system and the degree of non-collinearity. For topologically different regions of the diagram, we describe the edge electronic states on the side face of the film. In addition, we investigate the spectrum of one-dimensional states on the domain wall separating domains with the opposite canting angle. We also discuss the results obtained and the experimental situation in thin films of the MnBi2Te4 compound.

Strain-induced photocurrent enhancement in thin films of topological insulators (Bi2Te3)

Topological insulators are anticipated to be a viable option for flexible near-infrared (NIR) photodetection that are a basic potential comportment for future photoelectric applications, wearable devices, and potential defence applications.

Electric field tuning of the optical absorbance of topological insulator thin films

In view of electro-optic modulators and switches operating in the terahertz frequency range, we study the absorbance of a topological insulator (TI) thin film subjected to a static electric field. Adopting the Hamiltonian for the three-dimensional ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ class of TIs including terms to second order in the electron wave vector and to first order in the electric field, we present an effective model for a TI thin film. We demonstrate the distinct influences of in-plane and out-of-plane external electric fields, the in-plane electric field-induced dichroism, and the electric field and chemical potential tuning of the absorbance edge. Under the influence of an out-of-plane electric field, a TI film with a thickness of about 2 nm exhibits a considerable absorbance at the absorbance edge. Of prime practical importance, the absorbance edge can be shifted about $0.3\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$ with the application of moderate electric fields about $0.4\phantom{\rule{0.28em}{0ex}}\mathrm{V}{\mathrm{nm}}^{\ensuremath{-}1}$ or with chemical potential variations about $0.3\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$.

Quantum anomalous Hall effect in perfectly compensated collinear antiferromagnetic thin films

We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel at some temperature, independent of the interior layer magnetization configuration. Using this criterion, we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magnetization, and discuss strategies for realizing these interesting magnetic states experimentally.

Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/n-Si) diode

The work presents a study of quasi-2D thin topological insulator film of TlBiSe2 and its heterojunction TlBiSe2/Glass and TlBiSe2/Si by thermal coating. The vibrational modes were identified in both the heterojunctions using Raman spectroscopy with the identification of the surface phonon mode (SPM) in the TlBiSe2/Si heterojunction. Ultrafast dynamics were studied for the relaxation dynamics of the charge carriers in these heterojunctions. The study identified the interface phenomenon in the form of charge states (CT) in TlBiSe2/Si p-n heterojunction. The p-TlBiSe2/n-Si heterojunction showed good p-n diode characteristics with a rectification ratio under the dark. Its optical response was studied by varying optical power (2.37–3.78 µW) and wavelength (500–1900 nm). It showed excellent photoresponse in the visible to near-infrared (NIR) range which peaks at 900 nm wavelength in both forward as well reverse bias. The explanation of its optical and electrical performance was modeled in terms of band structure, surface states, and interface phenomenon. The study is important in terms of the implementation of next-generation topological insulator-based photodetectors.

Spin transport properties in ferromagnet/superconductor junctions on topological insulator

The spin-dependent Andreev reflection is investigated theoretically by analyzing the electronic transport in a thin-film topological insulator (TI) ferromagnet/superconductor (FM/SC) junction. The tunneling conductance and shot noise are calculated based on the Dirac–Bogoliubov–de Gennes equation and Blonder–Tinkham–Klapwijk theory. It is found that the magnetic gap in ferromagnet can enhance the Andreev retro-reflection but suppress the specular Andreev reflection. The gate potential applied to the electrode on top of superconductor can enhance the two types of reflections. There is a transition between the two types of reflections at which both the tunneling conductance and differential shot noise become zero. These results provide a method to realize and detect experimentally the intra-band specular Andreev reflection in thin film TI-based FM/SC structures.

Enhanced and stable spin Hall conductivity in a disordered time-reversal and inversion symmetry broken topological insulator thin film

We consider a disordered topological insulator thin film placed on the top of a ferromagnetic insulator with a perpendicular exchange field M and subjected to a perpendicular electric field. The presence of ferromagnetic insulator causes that bottom surface states of the topological insulator thin film become spin polarized and the electric field provides a potential difference V between the two surface states, resulting in breaking of time-reversal and inversion symmetry in the system. Using Kubo formalism and employing the first Born approximation as well as the self-consistent Born approximation, we calculate the spin Hall conductivity. We find that for small values of V, a large spin conductivity can be generated through large values of M away from the charge neutrality point. But for large values of V, the spin conductivity can be promoted even with small values of M around the charge neutrality point. The effect of vertex corrections and the stability of the obtained large spin conductivity against disorders are also examined.

Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures

Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and react with Bi2Te3. For highly crystalline c-axis oriented Bi2Te3 films, a giant enhancement in Gilbert damping is observed, accompanied by an effective out-of-plane magnetic anisotropy and enhanced damping-like spin-orbit torque (DL-SOT), possibly due to the topological surface states (TSS) of Bi2Te3. Furthermore, a spontaneous exchange bias is observed in hysteresis loop measurements at low temperatures. This is because of an antiferromagnetic topological interfacial layer formed by reaction of the diffused Ni with Bi2Te3 which couples with the FM, Ni80Fe20. For increasing disorder of Bi2Te3, a significant weakening of exchange interaction in the AFM interfacial layer is found. These experimental results Abstract length is one paragraph.