Topological Insulator Thin Films Research Articles

Promoting Surface Conduction through Scalable Structure Engineering of Flexible Topological Insulator Thin Films

AbstractSpintronics, micro/nanofabrication, and the semiconductor industry are undergoing significant transformations, highlighting the need for flexible technologie. This study examines the possibility of integrating topological insulators (TIs), specifically Bi2Te3 thin films (13–191 nm), into flexible spintronic applications through scalable magneto‐sputtering techniques, and investigates how structural organization influences electrical and topological properties through post‐thermal annealing. Films annealed above 250 °C display improved polycrystalline structure, larger crystallites, fewer local defects, and higher a room‐temperature Seebeck coefficient (S) and resistivity (ρ), suggesting decreased bulk electronic contributions. A metastable transport regime is identified in the temperature‐dependent resistivity of films annealed at 300 °C between 20–100 K; in this range, the thinnest film exhibits markedly metallic behavior, signaling the presence of topological surface states (TSS). Magnetoresistance measurements of as‐grown and annealed films, between 3–20 K, demonstrate weak antilocalization. Applying the Hikami‐Larkin‐Nagaoka model, α‐coefficients are found to scale with thickness from 0.5–1, indicating thickness‐controlled coupling of the TSS. Post‐annealing at 300 °C, the phase coherence length, Lϕ, of the thinner films increases, while the temperature dephasing rate shifts from ∼0.7 (as‐grown) to ∼0.5 (post‐annealing), aligning with expected values for 2D TSS. These are encouraging findings for large‐scale manufacturing flexible TI technologies, without sacrificing tunabilit.

Obtained Berry phase and cyclotron mass of Bi2Se3 topological insulator thin film through weak anti-localization and Shubnikov-de haas oscillation studies

Bi-based binary alloys have drawn enormous attention in modern condensed matter research for their novel topological property. Here, we have explored the quantum-transport properties of a 100 nm Bi2Se3 topological insulator thin film grown by an indigenously developed electron-beam-evaporator through co-deposition technique. A detailed study about the structural, elemental, and morphological analysis has been presented through the GI-XRD, Raman spectroscopy, XPS, EDX, SEM, and AFM characterization. Finally, we have investigated the angle and temperature-dependent magneto-conductance properties of our deposited films, which indicate the surface-electron dominated quantum-transport has occurred. Interestingly, our Bi2Se3 film exhibits 2D weak anti-localization and Subnikov-de Hass oscillation features. From which some novel topological parameters are explored, such as, Berry phase (β), phase-coherence-length (l ϕ ), Fermi velocity (vF), wave vector (kF), Dingle temperature (TD), quantum mobility (μ q), and cyclotron mass (mc). The estimated β = 0.7π and mc = 0.17me, indicate that the topologically protected massless Dirac particles can be achieved in this kind of system.

Thermopower and resistivity of the topological insulator Bi2Te3 in the amorphous and crystalline phase

We have, in-situ, prepared and measured the temperature dependence of thermopower S(T) and resistance R(T) of Bi2Te3 topological insulator (TI) thin films in the amorphous and crystalline phase. Samples were prepared by sequential flash-evaporation at liquid 4He temperature. The S(T) in the amorphous phase is negative and much larger compared to other known amorphous materials, while in the crystalline phase it is also negative and behaves linearly with the temperature. The resistivity ρ(T) in the amorphous phase shows a semiconducting like behavior that changes to a linear metallic behavior after crystallization. S(T) an ρ(T) results in the crystalline phase are in good agreement with results obtained both in bulk and thin films reported in the literature. Linear behavior of the ρ(T) for T > 15 K indicates the typical metallic contribution from the surface states as observed in other TI novel materials. The low temperature conductivity T < 10 K exhibits logarithmic temperature dependent positive slope κ ≈ 0.21, indicating the dominance of electron-electron interaction (EEI) over the quantum interference effect, with a clear two dimensional nature of the contribution. Raman spectroscopy showed that the sample has crystallized in the trigonal R3―m space group. Energy-dispersive x-ray spectroscopy reveales high homogeneity in the concentration and no magnetic impurities introduced during preparation or growth.

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6.

This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10-107 Hz) and high-frequency (0.5-2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

Recent progress of MnBi2Te4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect.

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi2Te4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi2Te4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Understanding how the breakdown of the QAHE occurs in MnBi2Te4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi2Te4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi2Te4 thin films.

Raman scattering spectroscopy of MBE grown thin film topological insulator Bi2-xSbxTe3-ySey.

BSTS epitaxial thin film topological insulators were grown using the MBE technique on two different types of substrates i.e., Si (111) and SiC/graphene with Bi0.7Sb1.6Te1.8Se0.9 and Bi0.9Sb1.5Te1.8Se1.1, respectively. The crystallographic properties of BSTS films were investigated via X-ray diffraction, which showed the strongest reflections from the (0 0 l) facets corresponding to the rhombohedral phase. Superior epitaxial growth, homogeneous thickness, smooth surfaces, and larger unit cell parameters were observed for the films grown on the Si substrate. Polarization dependent Raman spectroscopy showed a weak appearance of the Ag mode in cross--polarized geometry. In contrast, a strong Eg mode was observed in both parallel and cross-polarized geometries which correspond to the rhombohedral crystal symmetry of BSTS films. A redshift of Ag and Eg modes was observed in the Raman spectra of BSTS films grown on the Si substrate, compared to those on SiC/graphene, which was directly associated with the unit cell parameter and composition of the films. Raman spectra showed four fundamental modes with asymmetric line shape, and deconvolution of the peaks resulted in additional modes in both the BSTS thin films. The sum of relative ratios of linewidths of fundamental modes (Ag and Eg) of BSTS films grown on Si substrate was lower, indicating a more ordered structure with lower contribution of defects as compared to BSTS film grown on SiC/graphene substrate.

Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1−xSbx)2Te3 topological insulator thin films

Optical helicity provides us with an effective means to control the helicity-dependent photocurrent in the spin-momentum-locked surface states of topological insulators (TIs). Also, the TIs show potential in polarization detection as an intrinsic solid-state optical chirality detector for easier integration and fabrication. However, the complex photoresponses with the circular photogalvanic effect, the linear photogalvanic effect, and the photon drag effect in the TIs prevent them from direct chirality detection of the elliptically polarized light. Here, by fitting with the theoretical models to the measured photocurrents, the microscopic origin of different components of the helicity-dependent photocurrent has been demonstrated. We show a comprehensive study of the helicity-dependent photocurrent in (Bi1−xSb x )2Te3 thin films of different thicknesses as a function of the light incident angle and the gate-tuned chemical potential. The observation of the light incident angle dependence of the helicity-dependent photocurrent provides us with a polarization detection strategy using a TI thin film without the use of any additional optical elements, and the detection accuracy can be enhanced by gate tuning. Additionally, the Stokes parameters can be extracted by arithmetic operation of photocurrents measured with different incident angles and gating voltages for complete characterization of the polarization states of a light beam. Using this means, we realize the polarization detection and the Stokes parameters analysis with a single device. Our work provides an alternative solution to develop miniaturized intrinsic polarization-sensitive photodetectors.

Magneto-optical transport of thin film topological insulators with structure inversion asymmetry

Magneto-optical transport of thin film topological insulators with structure inversion asymmetry

Majorana Corner Modes and Flat-Band Majorana Edge Modes in Superconductor/Topological-Insulator/Superconductor Junctions

Recently, superconductors with higher-order topology have stimulated extensive attention and research interest. Higher-order topological superconductors exhibit unconventional bulk-boundary correspondence, thus allow exotic lower-dimensional boundary modes, such as Majorana corner and hinge modes. However, higher-order topological superconductivity has yet to be found in naturally occurring materials. We investigate higher-order topology in a two-dimensional Josephson junction comprised of two s-wave superconductors separated by a topological insulator thin film. We find that zero-energy Majorana corner modes, a boundary fingerprint of higher-order topological superconductivity, can be achieved by applying magnetic field. When an in-plane Zeeman field is applied to the system, two corner modes appear in the superconducting junction. Furthermore, we also discover a two-dimensional nodal superconducting phase which supports flat-band Majorana edge modes connecting the bulk nodes. Importantly, we demonstrate that zero-energy Majorana corner modes are stable when increasing the thickness of topological insulator thin film.

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in Bi2Se3 ultrathin films. The thickness-dependent position of the Dirac point and the magnitude of the mass gap are discussed in terms of the Hartree approximation and the self-consistent gap equation. We find that for thicknesses below 6 quintuple layers, the magnitude of the mass gap is in good agreement with the experimental results. Our work provides a more accurate means of describing and predicting the behaviour of quasi-particles in ultrathin topological insulator films and stacked topological systems.

Low-damage electron beam lithography for nanostructures on Bi2Te3-class topological insulator thin films

Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi2Se3 family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage—common for nanopatterning in academic facilities—damages both nonmagnetic TIs and their magnetically doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.

Quantum size effects and transport properties of Bi2(Te1-xSex)3 3D-topological insulator thin films

In this work, it was established that the room-temperature thickness (d = 16–207 nm) dependences of the Seebeck coefficient, Hall coefficient, and electrical conductivity in n-Bi2(Te0.9Se0.1)3 topological insulator thin films grown on glass substrates, in the thickness range of d = 16–85 nm exhibit an undamped oscillatory behavior with a large amplitude and are well approximated by a harmonic function with a period Δd=(8.0 ± 0.5)nm. The anionic substitution leads to some changes in the quantum size effects manifestation. The experimental results are consistent with theoretical calculations of Δd based on the infinitely deep potential well model. A sustained character of the oscillations is attributed to topologically protected surface states.

Thermal transport in multiple Majorana edge states of hybrid topological superconductor junctions

The hybrid topological superconductor (TSC) with multiple Majorana edge states can be formed in a system where a magnetic topological insulator (MTI) thin film is coupled with two s-wave superconductors in proximity. The band structure and thermal transport properties of the hybrid TSC hosting chiral and helical Majorana edge states are investigated. By using the nonequilibrium Green’s function method combined with the Landauer–Büttiker formula, the scattering coefficients (i.e., the normal tunneling T, the local Andreev reflection TLAR, the crossed Andreev reflection TCAR) and two-terminal electric thermal conductance κe are calculated. With the change of the exchange field Mz, the system goes through a series of topological phase transitions. The chiral Majorana edge states, the helical Majorana edge states and the multiple Majorana edge states possessing both chiral and helical edge modes are induced at the boundary of TSC. At the boundary of the central TSC, a single Majorana fermion edge state is equivalent to half an ordinary fermion to carry heat, leading to the generation of a half-integer quantized thermal conductance plateau. Thus, half-integer (i.e., 1/2, 3/2) and integer (i.e., 1, 2) quantized thermal conductance plateaus appear in different topological phases. These quantized plateaus that survive well over a certain range of temperatures can be used experimentally to detect chiral and helical Majorana fermions.

Floquet engineering of magnetism in topological insulator thin films

Dynamic manipulation of magnetism in topological materials is demonstrated here via a Floquet engineering approach using circularly polarized light. Increasing the strength of the laser field, besides the expected topological phase transition (PT), the magnetically doped topological insulator thin film also undergoes a magnetic PT from ferromagnetism to paramagnetism, whose critical behavior strongly depends on the quantum quenching. In sharp contrast to the equilibrium case, the non-equilibrium Curie temperatures vary for different time scale and experimental setup, not all relying on change of topology. Our discoveries deepen the understanding of the relationship between topology and magnetism in the non-equilibrium regime and extend optoelectronic device applications to topological materials.

Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films

To date, the quantum anomalous Hall effect has been realized in chromium (Cr)- and/or vanadium(V)-doped topological insulator (Bi,Sb)2Te3 thin films. In this work, we use molecular beam epitaxy to synthesize both V- and Cr-doped Bi2Te3 thin films with controlled dopant concentration. By performing magneto-transport measurements, we find that both systems show an unusual yet similar ferromagnetic response with respect to magnetic dopant concentration; specifically the Curie temperature does not increase monotonically but shows a local maximum at a critical dopant concentration. We attribute this unusual ferromagnetic response observed in Cr/V-doped Bi2Te3 thin films to the dopant-concentration-induced magnetic exchange interaction, which displays evolution from van Vleck-type ferromagnetism in a nontrivial magnetic topological insulator to Ruderman-Kittel-Kasuya-Yosida (RKKY)-type ferromagnetism in a trivial diluted magnetic semiconductor. Our work provides insights into the ferromagnetic properties of magnetically doped topological insulator thin films and facilitates the pursuit of high-temperature quantum anomalous Hall effect.

Quantum Oscillations of Interlayer Conductivity in a Multilayer Topological Insulator

Quantum and difference oscillations of interlayer conductivity in a multilayer system of thin films of topological insulators (TIs) are investigated. Due to the linearity of the carrier spectrum in such a system, new features of quantum oscillations arise. In particular, the frequencies of de Haas–van Alfvén and Shubnikov–de Haas oscillations depend quadratically on the chemical potential, rather than linearly as in systems with parabolic carrier spectrum. For the same reason, the temperature damping factor of oscillations contains the chemical potential. This is due to the nonequidistant character of the Landau levels: the higher the chemical potential, the smaller the distance between Landau levels. However, the beat frequencies, as well as the frequencies of slow oscillations, do not depend on the chemical potential; in this sense, the behavior of these systems is similar to that of conventional non-Dirac systems. Finally, in the Born approximation (in the second order cross-diagram technique), we considered the general case when the interlayer conductivity takes into account both intra- and interband transitions. We have shown that the contribution of intraband transitions is insignificant for the conductivity oscillations in the absence of magnetic impurities. However, in the presence of a Dirac point in the spectrum, a linear (in magnetic field) intraband contribution to conductivity arises from the zero Landau level. At low temperatures, this contribution is exponentially small compared to the intraband contribution and vanishes at zero temperature.

Strained topological insulator spin field effect transistor

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades. These transistors are typically implemented by modulating the spin orbit interaction in the transistor’s channel with a gate voltage, which causes gate-controlled spin precession of the current carriers, and that modulates the channel current flowing between the ferromagnetic source and drain contacts to implement transistor action. Here, we introduce a new concept for a spin field effect transistor which does not exploit spin-orbit interaction. Its channel is made of the conducting surface of a strained three dimensional topological insulator (3D-TI) thin film and the transistor function is elicited by straining the channel region with a gate voltage (using a piezoelectric under-layer) to modify the energy dispersion relation, or the Dirac velocity, of the TI surface states. This rotates the spins of the carriers in the channel and that modulates the current flowing between the ferromagnetic source and drain contacts to realize transistor action. We call it a strained-topological-insulator-spin-field-effect-transistor, or STI-SPINFET. Its conductance on/off ratio is too poor to make it useful as a switch, but it may have other uses, such as an extremely energy-efficient stand-alone single-transistor frequency multiplier.

Electronic Spectrum Features under the Transition from Axion Insulator Phase to Quantum Anomalous Hall Effect Phase in an Intrinsic Antiferromagnetic Topological Insulator Thin Film

In this paper, we investigate the electron topological states in a thin film of intrinsic antiferromagnetic topological insulator, focusing on their relationship with the magnetic texture. We consider a model for the film with an even number of septuple-layer blocks, which is subject to transition from the phase of an axion insulator to the phase of quantized Hall conductivity under an external magnetic field. In the continuum approach, we model an effective two-dimensional Hamiltonian of the thin film of a topological insulator with non-collinear magnetization, on the basis of which we obtain the energy spectrum and the Berry curvature. The analysis of topological indices makes it possible to construct a topological phase diagram depending on the parameters of the system and the degree of non-collinearity. For topologically different regions of the diagram, we describe the edge electronic states on the side face of the film. In addition, we investigate the spectrum of one-dimensional states on the domain wall separating domains with the opposite canting angle. We also discuss the results obtained and the experimental situation in thin films of the MnBi2Te4 compound.

Strain-induced photocurrent enhancement in thin films of topological insulators (Bi2Te3)

Topological insulators are anticipated to be a viable option for flexible near-infrared (NIR) photodetection that are a basic potential comportment for future photoelectric applications, wearable devices, and potential defence applications.

Electric field tuning of the optical absorbance of topological insulator thin films

In view of electro-optic modulators and switches operating in the terahertz frequency range, we study the absorbance of a topological insulator (TI) thin film subjected to a static electric field. Adopting the Hamiltonian for the three-dimensional ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ class of TIs including terms to second order in the electron wave vector and to first order in the electric field, we present an effective model for a TI thin film. We demonstrate the distinct influences of in-plane and out-of-plane external electric fields, the in-plane electric field-induced dichroism, and the electric field and chemical potential tuning of the absorbance edge. Under the influence of an out-of-plane electric field, a TI film with a thickness of about 2 nm exhibits a considerable absorbance at the absorbance edge. Of prime practical importance, the absorbance edge can be shifted about $0.3\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$ with the application of moderate electric fields about $0.4\phantom{\rule{0.28em}{0ex}}\mathrm{V}{\mathrm{nm}}^{\ensuremath{-}1}$ or with chemical potential variations about $0.3\phantom{\rule{0.28em}{0ex}}\mathrm{eV}$.