Top Absorber Research Articles

New Double Perovskite Solar Cell Containing Ba3PCl3 (A3BX3) and CsSnI3 (ABX3) Leading to an Improved Efficiency Above 30%

AbstractIn photovoltaic (PV) technology, halide perovskites stand out for their exceptional optical properties, improved performance, and cost‐effectiveness. This study utilized SCAPS‐1D to examine a novel dual absorber solar cell, using Ba3PCl3 as the top absorber and CsSnI3 as the bottom absorber, marking the first comprehensive analysis of this pairing. The research thoroughly investigated the thickness, doping concentrations, and defect densities of each absorber to evaluate their impact on electrical properties such as VOC, JSC, FF, and power conversion efficiency (PCE). Additionally, the study meticulously analyzed the effects of temperature, shunt, and series resistances. The results show that the first device (FTO/SnS2/Ba3PCl3/Au) achieved a PCE of 17.75%, while the second device (FTO/SnS2/CsSnI3/Au) reached a PCE of 20.63%. Optimized designs combining both absorbers (FTO/SnS2/Ba3PCl3/CsSnI3/Au) resulted in a PCE of 30.97%, with a JSC of 47.52 mA/cm2, FF of 80.42%, and VOC of 0.81 V. These promising findings offer valuable insights for the future development of experimental solar devices.

Feasibility of Exceeding 20% Efficiency for Kesterite/c-Silicon Tandem Solar Cells Using an Alternative Buffer Layer: Optical and Electrical Analysis.

Tandem solar cells have the potential to be more efficient than the Shockley-Queisser limit imposed on single junction cells. In this study, optical and electrical modeling based on experimental data were used to investigate the possibility of boosting the performance of kesterite/c-Si tandem solar cells by inserting an alternative nontoxic TiO2 buffer layer into the kesterite top subcell. First, with SCAPS-1D simulation, we determined the data reported for the best kesterite (CZTS (Eg = 1.5 eV)) device in the experiments to be used as a simulation baseline. After obtaining metric parameters close to those reported, the influence on the optoelectronic characteristics of replacing CdS with a TiO2 buffer layer was studied and analyzed. Different top subcell absorbers (CZTS0.8Se0.2 (Eg = 1.4 eV), CZTS (Eg = 1.5 eV), CZTS (Eg = 1.6 eV), and CZT0.6Ge0.4S (Eg = 1.7 eV)) with different thicknesses were investigated under AM1.5 illumination. Then, to achieve current matching conditions, the c-Si bottom subcell, with an efficiency at the level of commercially available subcells (19%), was simulated using various top subcells transmitting light calculated using the transfer matrix method (TMM) for optical modeling. Adding TiO2 significantly enhanced the electrical and optical performance of the kesterite top subcell due to the decrease in parasitic light absorption and heterojunction interface recombination. The best tandem device with a TiO2 buffer layer for the top subcell with an optimum bandgap equal to 1.7 eV (CZT0.6Ge0.4S4) and a thickness of 0.8 µm achieved an efficiency of approximately 20%. These findings revealed that using a TiO2 buffer layer is a promising way to improve the performance of kesterite/Si tandem solar cells in the future. However, important optical and electrical breakthroughs are needed to make kesterite materials viable for tandem applications.

Low‐Temperature Synthesis of Stable CaZn2P2 Zintl Phosphide Thin Films as Candidate Top Absorbers

AbstractThe development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with bandgaps in the range of ≈1.5–2.3 eV, for use in the top cell paired with a narrower‐gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn2P2 as a compelling candidate semiconductor for these applications. Phase‐pure, ≈500 nm‐thick CaZn2P2 thin films are prepared using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. Ultraviolet‐visible spectroscopy shows that CaZn2P2 films exhibit an optical absorptivity of ≈104 cm−1 at ≈1.95 eV direct bandgap. Room‐temperature photoluminescence (PL) measurements show near‐band‐edge optical emission, and time‐resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ≈30 ns. CaZn2P2 is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first‐principles calculations, which indicate the absence of low‐formation‐energy, deep intrinsic defects. Overall, this study shall motivate future work integrating this potential top cell absorber material into tandem solar cells.

Numerical analysis and device modelling of a lead-free Sr3PI3/Sr3SbI3 double absorber solar cell for enhanced efficiency.

Halide perovskites are the most promising options for extremely efficient solar absorbers in the field of photovoltaic (PV) technology because of their remarkable optical qualities, increased efficiency, lightweight design, and affordability. This work examines the analysis of a dual-absorber solar device that uses Sr3SbI3 as the bottom absorber layer and Sr3PI3 as the top absorber layer of an inorganic perovskite through the SCAPS-1D platform. The device architecture includes ZnSe as the electron transport layer (ETL), while the active layer consists of Sr3PI3 and Sr3SbI3 with precise bandgap values. The bandgap value of Sr3SbI3 is 1.307 eV and Sr3PI3 is 1.258 eV. By employing double-graded materials of Sr3PI3/Sr3SbI3, the study achieves an optimized efficiency of up to 34.13% with a V OC of 1.09 V, FF of 87.29%, and J SC of 35.61 mA cm-2. The simulation explores the influence of absorber layer thickness, doping level, and defect density on electrical properties like efficiency, short-circuit current, open-circuit voltage, and fill factor. It also examines variations in temperature and assesses series and shunt resistances in addition to electrical factors. The simulation's output offers valuable insights and suggestions for designing and developing double-absorber solar cells.

(Invited) Semi-Monolithically Integrated Photoelectrochemical Devices for Unassisted Water Splitting

Photoelectrochemical (PEC) water splitting has the potential to become an efficient method for renewable hydrogen production. However, the efficiency, projected cost, and durability of lab-scale systems are not yet at the level required to make this technology economically feasible. Amongst all materials studied to date, the chalcopyrite class is arguably one of the most promising classes for PEC water splitting, as it has already demonstrated low-cost and high photoconversion capabilities as a photovoltaic material. In the context of PEC, our group demonstrated that co-evaporated 1.65 eV bandgap (EG) CuGaSe2 is capable of evolving hydrogen with Faradaic efficiency greater than 85% and generate photocurrent densities over 15 mA.cm-2, as measured in a 3-electrode configuration in 0.5M H2SO4 under simulated AM1.5G illumination. Unfortunately, CuGaSe2’s narrow EG limits its integration as top absorber into multi-junction stacked PEC device. In the present communication, we report on our latest efforts to synthesize wide-EG (1.8-2.0 eV) chalcopyrites compatible with the stacked multi-junction integration scheme. We present specifically results on EGtunable Cu(In,Ga)S2, CuGa(S,Se)2 and order vacancy compound CuGa3Se5. We also discuss some of the strategies developed to improve their surface energetics for the hydrogen evolution reaction, including the use of bandgap tunable MgZnO n-type buffer layers. Finally, we introduce the concept of semi-monolithic tandems, a new integration scheme where wide- and narrow-bandgap chalcopyrites are first integrated on separate substrates, then exfoliated, and finally bonded together to create fully functional multi-junction PEC devices.

Self-Powered FTO/CdSe/Bi2Se3 Photodetector with Bipolar Photoresponse Characteristics.

Self-powered photodetectors with bipolar photoresponse characteristics are expected to play a critical role in the field of secure optical communication, artificial neuromorphic systems, and intelligent color sensors. In this work, asymmetric heterojunction devices exhibiting wavelength-dependent bipolar photoresponse with a structure of Glass/FTO/CdSe/Bi2Se3/Au were fabricated. Under a short wavelength light irradiation, the top CdSe absorber generates a high carrier concentration; the excited carriers are quickly separated by the built-in electric field induced by the FTO/CdSe diode, resulting in a negative photocurrent. For light with wavelengths beyond the CdSe absorption edge, it is absorbed by the bottom Bi2Se3 absorber, and a positive photocurrent can be observed. Therefore, based on the bandgap difference between the top CdSe absorber and the bottom Bi2Se3 absorber, combined with the photogenerated carriers separated by asymmetric back-to-back diode, a wavelength-dependent bipolar response is realized. In this work, by employing this structure, the responsivities of -33.3 and 0.3 mA/W were achieved under the illumination of 405 and 830 nm, respectively. This work provides important indications in the preparation and performance optimization for wavelength-dependent bipolar photodetectors.

Double Perovskite Tandem Solar Cells: Design and Performance Investigation of the Use of CABB and CCSC as Top and Bottom Cell Absorber Materials

Double Perovskite Tandem Solar Cells: Design and Performance Investigation of the Use of CABB and CCSC as Top and Bottom Cell Absorber Materials

Modeling a tandem solar cell based on Sb2S3 and Sb2Se3 absorber layers

A device simulation presented for a tandem solar cell of Sb2S3 and Sb2Se3 as top (Eg = 1.7 eV) and bottom (Eg = 1.2 eV) absorber layers. We examined the device characteristics, radiative recombination, and optimum thickness of this tandem cell using filtered spectrum analysis and current-matching techniques in COMSOL. An open-circuit voltage of 1.58 V, current density of 15.50 mA/cm−2, fill factor of 56.90 %, and a remarkable efficiency of 14 %. The optimum thickness of Sb2S3 is 350 nm and for Sb2Se3 is 760 nm. Promising characteristics obtained with a Jsc = 16.32 mA/cm2, Voc = 1.48 V, FF = 60.7 %, and an overall power conversion efficiency of 14.66 %. The optimum acceptor and bulk defect density have been calculated to be NA = 8.9 × 1015 cm−3 and BDD = 7.21 × 10−15 cm−3. The optimized values of radiative recombination rate in Sb2S3 and Sb2Se3 are 0.73 × 10−10 cm3/s and 6.5 × 10−11 cm3/s, respectively.

Design and optimization of a high efficiency CdTe–FeSi2 based double-junction two-terminal tandem solar cell

This article theoretically demonstrates an enormously efficient CdTe–FeSi2 based dual-junction tandem solar cell accompanied by slender semiconductor layers. The peak efficiency of the device has been ensured through the optimization of its various attributes of window, CdTe (bandgap 1.5 eV) top absorber, FeSi2 (bandgap 0.87 eV) bottom absorber and back surface layers. Additionally, the impacts of thickness, doping and the level of defects in different window, base and rear surface layers have been examined to observe how different layers affect the solar cell's performance. The optimized n-CdS/p-CdTe/p+-MoS2--n-CdS/p-FeSi2/p+-Cu2SnS3 dual-junction tandem solar device displays an efficiency of 43.9% with a voltage at no load, VOC of 1.928 V, current density under a closed circuit, JSC of 25.34 mA/cm2, and fill factor of 89.88%, respectively. These results disclose the high potential of the suggested solar cell based on CdTe and FeSi2 compounds.

A theoretical study of all-inorganic perovskite solar cells: Computational modeling of the CsPbI[formula omitted]/RbGeI[formula omitted] bilayer absorber structure

All-inorganic perovskite solar cells (AI-PSCs) have garnered significant attention in the perovskite community due to their stability and efficient photogeneration and absorption capabilities. Despite the toxicity associated with all-inorganic CsPbI3 perovskites containing lead (Pb), its presence remains crucial for achieving excellent photovoltaic properties. However, the imperative shift towards AI-PSCs using less toxic materials with suitable photovoltaic properties is imperative. The incorporation of a double perovskite absorber layer allows for broadening the absorption spectrum of PSCs and enhancing cell stability. In this study, we propose a novel AI-PSC structure with CsPbI3 as the top absorber with a wide bandgap of 1.69 eV and a lead-free RbGeI3 perovskite as the bottom absorber layer with a low bandgap of 1.31 eV. Utilizing numerical simulations with the SCAPS-1D simulator, we analyze the photovoltaic parameters of AI-PSCs with single and double absorber layers. Our investigations reveal that a double absorber layer structure, comprising CsPbI3 and RbGeI3 materials, outperforms a single-junction PSC based on CsPbI3. By optimizing critical device parameters, we achieved an impressive efficiency of 31.91% in an AI-PSC device with a CsPbI3(0.6 μm)/RbGeI3(2 μm) bilayer configuration. This study positions lead-free RbGeI3 perovskite as a promising partner for CsPbI3, offering a potential pathway for the development of highly efficient AI-PSCs.

Natural multiscale channeled salt resistant solar evaporator for efficient and long-term water desalination

Solar steam evaporation exhibits great potential in solving the global shortage of freshwater resources. However, salt accumulation at the top photothermal conversion surface has severely limited the desalination efficiency and stability of solar desalination systems. Herein, we demonstrated a nature-inspired salt resistant bilayered evaporator by using a slight delignificated tree root as bottom substrate and decorated graphene oxide layer as the top absorber surface. The naturally design of tree root inherently exists multilevel vertical channels interconnected porous microstructures. This distinctive structure of tree root allows ultra-high-speed water transport capability and rapid multi-directional salt exchange, enabling it to possess anti-salt-accumulation properties for solar steam generation. This designed tree root-based evaporator effectively prevented salt accumulation while maintaining a fast and stable evaporation rate, which exhibited an evaporation rate of 1.60 kg m−2 h−1 with excellent long-term stability in a high-salinity brine (21 wt%) under 1 sun irradiation. Taking the unparalleled advantages, our designed tree root-based evaporator obtained by a facile fabrication method represents a high-efficacy and stable fresh water production platform for practical applications in water purification.

Design of CZTS/CZTSe tandem solar cells with enhanced performance

The replacement of toxic and expensive materials with non-toxic, earth-abundant alternatives is an urgent necessity in the field of solar cells. Due to their environmentally friendly and optical properties, CZTS and CZTSe kesterite materials have been proposed as promising alternative compounds in thin film solar cell applications. In this study, a numerical investigation of a CZTS/CZTSe tandem solar cell structure is conducted using SILVACO software. In this structure, CZTS and CZTSe serve as the main absorbers in the top and bottom sub-cells, respectively. However, the bottom sub-cells require thick absorbers, which leads to a decrease in overall performance due to the limited diffusion length of minority carriers in the applied materials. A separate study of individually top and bottom cells was conducted, and their results closely matched those reported by world champions. Effects of the top absorber thickness were examined for the tandem configuration, which resulted in a conversion efficiency (η) of 15.71%. In order to enhance the performance of the tandem solar cell, a creation of a diffusion electric field in the absorbers of the sub-cells through gradient doping is proposed. The results demonstrated a significant improvement in performance, with gradient doping densities of 2 × 1014-1019 cm−3 and 1.5 × 1015-1019 cm−3 in the CZTS and CZTSe layers, respectively, yielding a remarkable conversion efficiency of 23.38%.

(Invited) Emergent Absorbers, Interfaces, and Integration Methods for Chalcopyrite-Based Photoelectrochemical Water Splitting Devices

Photoelectrochemical (PEC) water splitting has the potential to become an efficient method for renewable hydrogen production. However, the efficiency, projected cost, and durability of lab-scale systems are not yet at the level required to make this technology economically feasible. Amongst all materials studied to date, the chalcopyrite class is arguably one of the most promising classes for PEC water splitting, as it has already demonstrated low-cost and high photoconversion capabilities as a photovoltaic material. In the context of PEC, our group demonstrated that co-evaporated 1.65 eV bandgap (EG) CuGaSe2 is capable of evolving hydrogen with Faradaic efficiency greater than 85% and generate photocurrent densities over 15 mA.cm-2, as measured in a 3-electrode configuration in 0.5M H2SO4 under simulated AM1.5G illumination. Unfortunately, CuGaSe2’s narrow EG limits its integration as top absorber into a dual junction stacked PEC device (also known as hybrid photoelectrode, HPE). In the present communication, we report on our latest efforts to synthesize wide-EG (1.8-2.0 eV) chalcopyrites, compatible with the HPE integration scheme, and capable of generating saturated photocurrent densities greater than 10 mA/cm2. We present specifically results on EG tunable Cu(In,Ga)(S,Se)2, Cu(In,Ga)S2, CuGa(S,Se)2 and CuGa3Se5. We also discuss some of the strategies developed to improve their surface energetics for the hydrogen evolution reaction, including the use of bandgap tunable MgZnO n-type buffer layers. Finally, we introduce the concept of semi-monolithic tandems, a new integration scheme where wide- and narrow-bandgap chalcopyrites are first integrated on separate substrates and then exfoliated, and finally bonded to create fully functional tandem device.

Effect of substrate temperature on the structural optical and electrical properties of new Cu2Cd0.8Mn0.2SnS4 photo-absorber layer for solar cells

We report for the first time the effect of substrate temperature on the structural, optical, and electrical properties of Cu2Cd0.8Mn0.2SnS4 new photovoltaic absorber layer. Cu2Cd0.8Mn0.2SnS4 thin films were deposited on soda lime glass (SLG) substrates by the spray pyrolysis method at different substrate temperatures. X-ray diffraction measurement revealed the formation of cernyite structure by Cu2Cd0.8Mn0.2SnS4 thin film. Also, an increase in crystal size from 7.23 to 14.35 nm and crystallinity improvement of Cu2Cd0.8Mn0.2SnS4 thin film with an increase in substrate temperature were achieved. The atomic force microscopy indicated an increase in surface roughness with substrate temperature. The elemental composition of the Cu2Cd0.8Mn0.2SnS4 thin films showed Cu-poor, S-poor, and Sn-poor conditions. The optical characterization showed that the absorption coefficient of Cu2Cd0.8Mn0.2SnS4 is in the order of 104 cm−1 and the bandgap decreased from 1.89 to 1.87 eV with an increase in substrate temperature. The refractive index dispersion parameters were discussed in terms of the Wemple-Didomenico and Sellmeier equations. Hall effect measurement indicated that the Cu2Cd0.8Mn0.2SnS4 films exhibit P-type conductivity. High hole mobility and the highest conductivity of 2.77 x104 cm2/Vs and 5.60 (Ω.cm)-1 respectively, were achieved at 400 °C substrate temperature. The Cu2Cd0.8Mn0.2SnS4 deposited at 400 °C is a potential candidate for use as a top absorber layer in the tandem solar cell.

Towards efficient tandem solar cells based on lead-free and inorganics perovskite absorbers

In this paper, we modeled and simulated two tandem solar cell structures (a) and (b), in a two-terminal configuration based on inorganic and lead-free absorber materials. The structures are composed of sub-cells already studied in our previous work, where we simulated the impact of defect density and recombination rate at the interfaces, as well as that of the thicknesses of the charge transport and absorber layers, on the photovoltaic performance. We also studied the performance resulting from the use of different materials for the electron and hole transport layers. The two structures studied include a bottom cell based on the perovskite material CsSnI3 with a band gap energy of 1.3 eV and a thickness of 1.5 µm. The first structure has an upper sub-cell based on the CsSnGeI3 material with an energy of 1.5 eV, while the second has an upper sub-cell made of Cs2TiBr6 with a band gap energy of 1.6 eV. The theoretical model used to evaluate the photocurrent density, current-voltage characteristic, and photovoltaic parameters of the constituent sub-cells and the tandem device was described. Current matching analysis was performed to find the ideal combination of absorber thicknesses that allows the same current density to be shared. An efficiency of 29.8% was obtained with a short circuit current density Jsc = 19.92 mA/cm2, an open circuit potential Voc = 1.46 V and a form factor FF = 91.5% with the first structure (a), for a top absorber thickness of CsSnGeI3 of 190 nm, while an efficiency of 26.8% with Jsc = 16.74, Voc = 1.50 V and FF = 91.4% was obtained with the second structure (b), for a top absorber thickness of Cs2TiBr6 of 300 nm. The objective of this study is to develop efficient, low-cost, stable and non-toxic tandem devices based on lead-free and inorganic perovskite.

Device modeling and numerical study of a double absorber solar cell using a variety of electron transport materials

In photovoltaic (PV) technology, halide perovskites are the prospective choice for highly efficient solar absorbers because of their superior optical properties, enhanced efficiency, lightweight, and low cost. In this study, a double absorber solar device using an inorganic perovskite called NaZn0.7Cu0.3Br3 as the top absorber layer and MASnI3 as the bottom absorber layer is analyzed utilizing the SCAPS-1D simulation tool. The primary goal of this study is to look for a device architecture with a higher efficiency level. Here, current matching over two active layers is performed by adjusting the thickness of both active layers. This research focuses on the effect of various electron transport layers, varied absorber layer thicknesses, temperatures, absorber defect density, and metalwork functions on the performance of the proposed photo-voltaic cells. After researching a variety of solar cell architectures, it is revealed that FTO/ZnO/ NaZn0.7Cu0.3Br3 / MASnI3 / CuO /Au arrangement has an open circuit voltage of 1.1373 V, Fill Factor of 82.13%, short circuit current density of 34.71 mA/cm2 and highest power conversion efficiency (PCE) of 32.42%. Here, the simulations of the device indicated that a thickness of around 1 μm for the MASnI3 absorber was optimum. Additionally, the results of the simulations demonstrate that the efficiency of the device rapidly drops with increasing absorbers defect density and temperature, and device structures are steady at 300 K. Finally; any conductor can make the anode if its work function is larger than or equal to 5.10 eV.

Optimization of Efficient Perovskite-Si Hybrid Tandem Solar Cells

Perovskite-silicon tandem solar cells have attracted much attention to photovoltaic community because of their high efficiency via easy fabrication methods and availability of precursor material abundant in nature. The properties of both perovskite and silicon meet ideal solar cell standards such as high light absorption potential, long carrier diffusion length and fast charge separation process. Semi-transparent solar cell with widely tunable band gap of perovskite material is compatible with silicon solar cell for tandem structures. A perovskite-silicon tandem solar cell four terminal configuration optimization was performed through numerical simulation. The optimized four terminal perovskite-silicon tandem solar cell performances was investigated by varying the thickness of top and bottom solar cell absorber layers, defect density of the absorber layer, and temperature. Perovskite-silicon tandem solar cell showed better photovoltaic performance under constant illumination condition. A high performance mechanically attached four terminal (4-T) perovskite-silicon tandem solar cell has total power conversion efficiency (PCE) of 34.88% by optimized parameters through simulation. It has shown 37% efficiency with matched current of 23.71mA/cm2. These numerical simulation results are provided the parameter values for further experimental assignment.

Performance analyses of highly efficient inverted all-perovskite bilayer solar cell

Numerical simulation of an all-perovskite bilayer solar cell has been conducted by the SCAPS-1D. The presented structure employs MAPbI3 as a relatively wide bandgap (1.55 eV) top absorber and FA0.5MA0.5Pb0.5Sn0.5I3 as a narrow bandgap (1.25 eV) bottom absorber. The viability of the proposed design is accomplished in two steps. First, to validate this study, two inverted solar cells in standalone conditions are simulated and calibrated to fit previously reported state-of-the-art results. Second, both these devices are appraised for the bilayer configuration to boost their performances. Affecting parameters such as the thickness of perovskite absorbers, the work function of front and rear contacts, and the effect of temperature have been studied because solar cells are temperature-sensitive devices, and also carrier concentration and their mobility get overwhelmingly influenced as temperature increases. It is manifested that using bilayer structures could easily widen the absorption spectrum to the near-infrared region and significantly enhance the performance of the device which is mainly affected by the thickness of the FA0.5MA0.5Pb0.5Sn0.5I3 layer. Also, it has been found that the work function of the front contact has a prominent role with its optimal values being above 5 eV. Finally, the optimized inverted all-perovskite bilayer solar cell delivers a power conversion efficiency of 24.83%, fill factor of 79.4%, open circuit voltage of 0.9 V, and short circuit current density of 34.76 mA/cm2 at 275 K and a thickness of 100 nm and 600 nm for MAPbI3 and FA0.5MA0.5Pb0.5Sn0.5I3, respectively.

TCAD Device Simulation of All-Polymer Solar Cells for Indoor Applications: Potential for Tandem vs. Single Junction Cells.

The utilization of indoor photovoltaics makes it feasible to harvest energy from artificial light sources. Although single-junction indoor photovoltaics have demonstrated exceptional efficacy when using LED lighting, there is still a need for more comprehensive testing of tandem structures. Herein, the first systematic TCAD simulation study on the potential for tandem all-polymer solar cells (all-PSCs) for indoor applications is provided. The presented all-PSCs are based on experimental work in which the top wide bandgap subcell comprises a polymer blend PM7:PIDT, while the bottom narrow bandgap subcell has a polymer blend PM6:PY-IT. Standalone and tandem cells are simulated under AM1.5G solar radiation, and the simulation results are compared with measurements to calibrate the physical models and material parameters revealing PCE values of 10.11%, 16.50%, and 17.58% for the front, rear, and tandem cells, respectively. Next, we assessed the performance characteristics of the three cells under a white LED environment for different color temperatures and light intensities. The results showed a superior performance of the front cell, while a deterioration in the performance was observed for the tandem cell, reflecting in a lower PCE of 16.22% at a color temperature of 2900 K. Thus, an optimized tandem for outdoor applications was not suitable for indoor conditions. In order to alleviate this issue, we propose designing the tandem for indoor lightening by an appropriate choice of thicknesses of the top and bottom absorber layers in order to achieve the current matching point. Reducing the top absorber thickness while slightly increasing the bottom thickness resulted in a higher PCE of 27.80% at 2900 K.

Investigation of Polymer/Si Thin Film Tandem Solar Cell Using TCAD Numerical Simulation.

The current study introduces a two-terminal (2T) thin-film tandem solar cell (TSC) comprised of a polymer-based top sub cell and a thin crystalline silicon (c-Si) bottom sub cell. The photoactive layer of the top sub cell is a blend of PDTBTBz-2F as a polymer donor and PC71BM as a fullerene acceptor. Initially, a calibration of the two sub cells is carried out against experimental studies, providing a power conversion efficiency (PCE) of 9.88% for the top sub cell and 14.26% for the bottom sub cell. Upon incorporating both sub cells in a polymer/Si TSC, the resulting cell shows a PCE of 20.45% and a short circuit current density (Jsc) of 13.40 mA/cm2. Then, we optimize the tandem performance by controlling the valence band offset (VBO) of the polymer top cell. Furthermore, we investigate the impact of varying the top absorber defect density and the thicknesses of both absorber layers in an attempt to obtain the maximum obtainable PCE. After optimizing the tandem cell and at the designed current matching condition, the Jsc and PCE of the tandem cell are improved to 16.43 mA/cm2 and 28.41%, respectively. Based on this TCAD simulation study, a tandem configuration established from an all thin-film model may be feasible for wearable electronics applications. All simulations utilize the Silvaco Atlas package where the cells are subjected to standard one Sun (AM1.5G, 1000 W/m2) spectrum illumination.