The precise management of the buried interface in n-i-p perovskite solar cells (PSCs) to achieve efficient charge extraction and transport is crucial for improving the photovoltaic performance. Here, a 4-chloro-2,5-dimethoxyaniline (CDA) modifier with multifunctional groups is utilized as a molecular bridge at the TiO2/CsPbBr3 buried interface to enhance the qualities of TiO2 and CsPbBr3 films and the arrangement of interface energy level. The chlorine atom in CDA can heal the oxygen vacancies defects on the TiO2 film surface, thereby improving its electron mobility and conductivity. The –O– and -NH2 groups in CDA play a passivation effect on the ions defects of CsPbBr3 film, and especially the two –O– groups can anchor the lattice Pb atoms of CsPbBr3 perovskite, which effectively reduce the trap states of CsPbBr3 film and release the residual lattice strain. The modification of CDA also improves the wettability and energy level of TiO2 film to optimize CsPbBr3 crystal growth and charge transport, respectively. Consequently, the CsPbBr3 PSCs with CDA molecular bridge free of encapsulation achieve a highly increased power conversion efficiency of 10.85%, in contrast with 8.16% value of the control device. After 720 h of storage at 85 °C and in air environment with 85% relative humidity, the efficiency of the CDA-modified device retains 93.1% of the initial value, demonstrating excellent long-term humidity and thermal stability.