In applications as well as in research, the majority of chemoresistive gas sensors developed for the detection of reducing gases is based on semiconducting metal oxides (SMOX), which are loaded or doped with an additional compound - typically noble or other transition metals. The introduction of these additives has proven to be the most suitable approach to overcome significant disadvantages of pristine SMOX gas sensing materials, namely the poor long-term stability, lack of selectivity, high operation temperature, i.e. energy consumption, and strong interference of humidity [1-4]. Because of their practical importance the understanding of the chemical and electrical role of additives is an essential topic of gas sensor research. The initial models, established in the 1980s [5-7], suffered because of the inability of the characterization methods to operate in conditions closed to the actual applications ones. Nevertheless, the proposed mechanisms based on solely chemical or electronic sensitization of SMOX by noble metal additives, namely the spillover or Fermi-level control sensitization mechanism, respectively, played an important role in the general advancement of the field. However, these models do not describe the complexity of the sensitization by metal or metal oxide additives, which arises from interplay of the materials reactivity and gas sensing performance and the mutual influence of surface chemistry and the electronic properties of the solid. Thus, in many cases one has to consider both, a chemical and an electronic contribution to the sensitization effect [8-10]. Besides the presence of a separate additive phase, doping, i.e. the presence of impurity atoms in the SMOX’s lattice, additionally influences the chemical and electrical properties of SMOX.Today, the development of in-situ and operando methods provides a large tool-box to probe structural, chemical and electrical properties and processes during gas sensor operation. These developments play a key role in improving the mechanistic understanding of gas sensing with loaded or doped SMOX and this contribution aims to present revised models based on reviewing and discussing current works on sensitization mechanisms in SMOX materials and to describe the complexity of sensitization mechanisms with regard to the chemical and electronic contributions [11]. A summary of findings shows that the sensitization mechanism of an additive will depend on the nature of the additive itself and the properties of the SMOX, i.e. the selection of the materials, as well as the structure of the additive, which can be controlled material synthesis or introduction procedure. In some cases, sensitization mechanisms will be additive, e.g. the introduction of additional electronic states and reactive surface sites by doping; but in other cases, one effect will dominate, e.g. electronically coupled additives, which deactivate the SMOX surface and control its space charge layer.In order to enable a knowledge-based design of SMOX gas sensing materials, it is important to obtain detailed synthesis-structure-function-relationships and concepts of selecting a combination of SMOX and additive, which allow tuning the gas sensing properties. Modern synthesis methods allow an unprecedented control of structural properties and state-of-the-art characterization techniques allow monitoring gas sensing materials under realistic operation conditions. Thus, it is possible to systematically extent synthesis-structure-function-relationships to a large set of gas sensing materials operation conditions and analytes. This will provide a profound basis to rationally design and optimize gas sensing materials based on the understanding of the fundamental mechanisms and how they are linked to the selected materials and structure. Moseley, P. T. Progress in the Development of Semiconducting Metal Oxide Gas Sensors: A Review. Meas. Sci. Technol. 2017, 28 (8), 082001.Yamazoe, N.; Sakai, G.; Shimanoe, K. Oxide Semiconductor Gas Sensors. Catal. Surv. from Asia 2003, 7 (1), 63–75. https://doi.org/10.1023/A:1023436725457.Jaaniso, R.; Tan, O. K. Semiconductor Gas Sensors; Woodhead Publishing Limited, 2013.Ihokura, K.; Watson, J. The Stannic Oxide Gas Sensor: Principles and Applications, first.; CRS Press, Inc., 1994.Yamazoe, N. New Approaches for Improving Semiconductor Gas Sensors. Sensors Actuators B Chem. 1991, 5 (1–4), 7–19. https://doi.org/10.1016/0925-4005(91)80213-4.Matsushima, S.; Teraoka, Y.; Miura, N.; Yamazoe, N. Electronic Interaction between Metal Additives and Tin Dioxide in Tin Dioxide-Based Gas Sensors. Jpn. J. Appl. Phys. 1988, 27 (10), 1798–1802. https://doi.org/10.1143/JJAP.27.1798.Morrison, S. R. Selectivity in Semiconductor Gas Sensors. Sensors and Actuators 1987, 12 (4), 425–440.Yamazoe, N.; Kurokawa, Y.; Seiyama, T. Effects of Additives on Semiconductor Gas Sensors. Sensors Actuators B Chem. 1983, 4, 283–289. https://doi.org/10.1016/0250-6874(83)85034-3.Degler, D.; Müller, S. A.; Doronkin, D. E.; Wang, D.; Grunwaldt, J.-D.; Weimar, U.; Barsan, N. Platinum Loaded Tin Dioxide: A Model System for Unravelling the Interplay between Heterogeneous Catalysis and Gas Sensing. J. Mater. Chem. A 2018, 6 (5), 2034–2046. https://doi.org/10.1039/C7TA08781K.Morrison, S. R. The Chemical Physics of Surfaces; Plenum Press, New York, 1977.D. Degler, U. Weimar, N. Barsan, Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials, ACS Sensors 4, 9 (2019) 2228-2249 DOI: 10.1021/acssensors.9b00975
Read full abstract