Time-resolved Carrier Dynamics Research Articles

Ultrafast time-resolved carrier dynamics in tellurium nanowires using optical pump terahertz probe spectroscopy.

We report carrier relaxation dynamics in semiconducting tellurium nanowires (average diameter ∼ 10 nm) using ultrafast time-resolved terahertz spectroscopy. After photoexcitation using an 800 nm pump pulse, we observed an initial increase in the THz conductivity due to the absorption of THz radiation by photoexcited carriers. The time evolution of the differential conductivity (Δσ(τpp) = σpump on(τpp) - σpump off) shows a bi-exponential relaxation with the initial fast decay time scale of τ1 ∼ 25 ps followed by a longer relaxation time constant of τ2 ∼ 100 ps. Interestingly, the two time scales depend on the amount of the capping agent present on the surface of TeNWs, showing a faster relaxation of the photoexcited carriers as the percentage of capping decreases. This is physically interpreted as the surface state mediated relaxation mechanism of the photo-pumped carriers depending on the density of available surface states. A quantitative understanding is obtained using a coupled rate equation model taking into account the decay mechanisms determined from the surface mediated relaxation rate (DS) and direct recombination rate (DR) of the electron-hole pairs. Furthermore, the measured lattice temperature (TL) dependent dynamics, showing a faster relaxation at lower temperature, is understood using the same rate equation model, giving a power law dependence of the electron-hole recombination rate (DR) on TL as DR ∝ TL-1/2. This is explained by estimating DR using the van Roosbroeck-Shockley theory taking into account the density of states () of one-dimensional nanowires. Furthermore, to understand the measured frequency-dependent THz photoconductivity, we model Δσ(ω) using the Boltzmann transport equation taking into account the energy-dependent scattering rates showing the dominant role of short range (Γsr) and Coulomb scattering (ΓC) rates in the relaxation process, which further provides a measure of the charged and neutral impurity concentrations.

Spatially and Time-Resolved Carrier Dynamics in Core-Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire.

Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution. However, optical spectroscopic information can be also extracted using synchrotron pulses in a hard X-ray nanoprobe, exploiting a phenomenon called X-ray excited optical luminescence. Here, with 20 ps time resolution and 80 nm lateral resolution, we applied this time-resolved X-ray microscopy technique to individual core-shell InGaN/GaN multiple quantum well heterostructures deposited on GaN wires. Our findings suggest that the m-plane related multiple quantum well states govern the carrier dynamics. Likewise, our observations support not only the influence of In incorporation in the recombination rates, but also carrier localization phenomena at the hexagon wire apex. In addition, our experiment calls for further investigations of the spatiotemporal domain on the underlying mechanisms of optoelectronic nanodevices. Its great potential becomes more valuable when time-resolved X-ray excited optical luminescence microscopy is used in operando with other methods, such as X-ray absorption spectroscopy.

Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure.

van der Waals multilayer heterostructures have drawn increasing attention due to the potential for achieving high-performance photonic and optoelectronic devices. However, the carrier interlayer transportation behavior in multilayer structures, which is essential for determining the device performance, remains unrevealed. Here, we report a general strategy for studying and manipulating the carrier interlayer transportation in van der Waals multilayers by constructing type-I heterostructures, with a desired narrower bandgap monolayer acting as a carrier extraction layer. For heterostructures comprised of multilayer PbI2 and monolayer WS2, we find similar interlayer diffusion coefficients of ∼0.039 and ∼0.032 cm2 s-1 for electrons and holes in the PbI2 multilayer by fitting the time-resolved carrier dynamics based on the diffusion model. Because of the balanced carrier interlayer diffusion and the injection process at the heterointerface, the photoluminescence emission of the bottom WS2 monolayer is greatly enhanced by up to 106-fold at an optimized PbI2 thickness of the heterostructure. Our results provide valuable information on carrier interlayer transportation in van der Waals multilayer structures and pave the way for utilizing carrier behaviors to improve device performances.

Time-Resolved Observations of Photo-Generated Charge-Carrier Dynamics in Sb2Se3 Photocathodes for Photoelectrochemical Water Splitting

Solar-energy conversion by photoelectrochemical (PEC) devices is driven by the separation and transfer of photogenerated charge carriers. Thus, understanding carrier dynamics in a PEC device is essential to realizing efficient solar-energy conversion. Here, we investigate time-resolved carrier dynamics in emerging low-cost Sb2Se3 nanostructure photocathodes for PEC water splitting. Using terahertz spectroscopy, we observed an initial mobility loss within tens of picoseconds due to carrier localization and attributed the origin of carrier localization to the rich surface of Sb2Se3 nanostructures. In addition, a possible recombination at the interface between Sb2Se3 and the back contact is elucidated by time-resolved photoluminescence analysis. We also demonstrated the dual role of the RuO x co-catalyst in reducing surface recombination and enhancing charge transfer in full devices using intensity-modulated spectroscopy. The relatively low onset potential of the Sb2Se3 photocathode is attributed to the sluggish charge transfer at a low applied bias rather than to fast surface recombination. We believe that our insights on carrier dynamics would be an important step toward achieving highly efficient Sb2Se3 photocathodes.

Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods.

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Photoluminescence and time-resolved carrier dynamics in thiol-capped CdTe nanocrystals under high pressure

The application of static high pressure provides a method for precisely controlling and investigating many fundamental and unique properties of semiconductor nanocrystals (NCs). This study systematically investigates the high-pressure photoluminescence (PL) and time-resolved carrier dynamics of thiol-capped CdTe NCs of different sizes, at different concentrations, and in various stress environments. The zincblende-to-rocksalt phase transition in thiol-capped CdTe NCs is observed at a pressure far in excess of the bulk phase transition pressure. Additionally, the process of transformation depends strongly on NC size, and the phase transition pressure increases with NC size. These peculiar phenomena are attributed to the distinctive bonding of thiols to the NC surface. In a nonhydrostatic environment, considerable flattening of the PL energy of CdTe NC powder is observed above 3.0 GPa. Furthermore, asymmetric and double-peak PL emissions are obtained from a concentrated solution of CdTe NCs under hydrostatic pressure, implying the feasibility of pressure-induced interparticle coupling.

Time-resolved carrier dynamics and electron-phonon coupling strength in proximized weak ferromagnet-superconductor nanobilayers

We present our femtosecond optical pump-probe studies of proximized ferromagnet-superconductor nanobilayers. The weak ferromagnetic nature of a thin NiCu film makes it possible to observe the dynamics of the nonequilibrium carriers through the near-surface optical reflectivity change measurements. The subpicosecond biexponential reflectivity decay has been identified as electron-phonon Debye and acoustic phonon relaxation times, and the decay of Debye phonons versus temperature dependence was used to evaluate the electron-phonon coupling constants for both the pure Nb and proximized $\mathrm{Nb}∕\mathrm{Ni}\mathrm{Cu}$ heterostructures down to low temperatures. We have also demonstrated that the NiCu overlay on top of Nb dramatically reduced the slow, bolometric component of the photoresponse component, making such bilayers attractive for future radiation detector applications.

Time-Resolved Carrier Dynamics in Hg-Based High-Temperature Superconducting Photodetectors

We present fabrication and optical time-resolved photoresponse characterization of Hg-based high-temperature superconducting (HTS) thin films. The films were prepared from RF-magnetron-sputtered precursor films by an ex-situ mercuration process. Femtosecond, time-resolved, optical pump-probe spectroscopy measurements gave insight into the details of the Cooper-pair breaking and formation processes in our Hg-based films at temperatures far below the material's critical temperature. We observed that the Cooper-pair dynamics is not limited by the phonon bottleneck, which makes this HTS compound the material-of-choice for ultrafast optoelectronics applications.

Ultrafast carrier dynamics in single-wall carbon nanotubes.

Time-resolved carrier dynamics in single-wall carbon nanotubes is investigated by means of two-color pump-probe experiments. The recombination dynamics is monitored by probing the transient photobleaching observed on the interband transitions of the semiconducting tubes. This dynamics takes place on a 1 ps time scale which is 1 order of magnitude slower than in graphite. Transient photoinduced absorption is observed for nonresonant probing and is interpreted as a global redshift of the pi-plasmon resonance. We show that the opening of the band gap in semiconducting carbon nanotubes determines the nonlinear response dynamics over the whole visible and near-infrared spectrum.

Temperature-dependent picosecond time-resolved carrier dynamics in visible-light-emitting porous silicon

Photoluminescence mechanism and carrier dynamics for visible-light-emitting porous silicon are investigated with the use of temperature-dependent (77–400 K) and picosecond time-resolved luminescence spectroscopy. The results from porous silicon samples prepared by different post-anodic treatment methods are compared. Two excitation states with large distinct lifetimes are responsible for the visible light emission, where the higher energy state with a mono-exponential lifetime about 1 ns is revealed for the first time, which dominates the luminescence spectrum for low temperatures. At high temperatures a thermally assisted carrier transfer process occurs and a long lifetime (∼ μs) lower energy state dominates the luminescence spectrum. A possible explanation by taking both the quantum confinement effect and the surface-state mechanism as its basic framework is thus proposed.