The adhesion strength between Ti and TiB2, commonly employed in wear-resistant and oxidation-resistant coatings, depends on their interfacial properties. However, it is difficult to clearly understand the interaction of the Ti/TiB2 interface at the atomic or even electronic scale through experimental methods. Therefore, the first-principles calculation has been employed to study the Ti/TiB2 interface in this article. First of all, properties of the Ti(0001) surface, TiB2(0001) surface, and Ti(00011)/TiB2(0001) interfaces were investigated by first-principles calculations based on density functional theory (DFT). Considering two termination and three possible sequences, six interface models were studied in this work. Additionally, the work of adhesion ( W ad), interface energy ( γ int), and electronic structure of these interfaces were calculated. The results show that the calculated bulk properties of Ti and TiB2 are in good agreement with the experimental data and the values of other studies, indicating that the parameters used in our calculations are reliable. For the TiB2(0001), the B-terminated surface is less stable than the C-terminated one at low Δ μ Ti The surface energy of the B-terminated surface decreases with increasing Δ μ Ti, whereas the energy of the Ti-terminated surface increases. Consequently, the B-terminated surface is more stable when Δ μ Ti≥ - 1.27 eV/unit cell. The calculated W ad results indicate that both of W ad and interfacial separation ( d 0) are affected by the termination and stacking sequences. The W ad of the Ti/TiB2 interfaces with B termination is larger than that of the ones with Ti termination, which suggests that the stability and adhesion strength of the former are better than that of the latter. For the Ti/TiB2 interfaces with the same termination, the B-terminated hollow-stacked (BTH) interface and Ti-terminated hollow-stacked (TTC) interface are considered as the optimal ones. For the B-terminated interfaces, the W ad of the interfaces with same terminations follows the order: hollow site (HS)>center site (CS)>top site (TS), while the interfacial separation exhibits the opposite sequence. The reason could be that each interfacial B atom of TiB2(0001) side interact with three nearest-neighbor Ti atoms of Ti(0001) side in HS interface, which results in the strong interaction. While one interfacial B atom of TiB2(0001) side interact with only one nearest-neighbor Ti atom of Ti(0001) side in the CS and TS interface, leading to the relatively weak interaction. Moreover, the γ int of the interfaces with B-termination follows the sequence: HS W ad. In addition, for the entire range of Ti chemical potential, the BTH interface exhibits the smallest γ int among the six different interfaces. Therefore, the BTH interface has the best stability and adhesion strength. The electron density, charge density difference and partial density of states (PDOS) indicate that the BTH interface primarily consists of Ti–B covalent bonds and Ti–Ti metallic bonds, and the Ti–B covalent bonds is mainly contributed from the hybridization between interfacial B 2p and Ti 3d orbitals.