Third-generation Semiconductor Research Articles

Pt thin-film resistance thermo detectors with stable interfaces for potential integration in SiC high-temperature pressure sensors

Due to the excellent mechanical, chemical, and electrical properties of third-generation semiconductor silicon carbide (SiC), pressure sensors utilizing this material might be able to operate in extreme environments with temperatures exceeding 300 °C. However, the significant output drift at elevated temperatures challenges the precision and stability of measurements. Real-time in situ temperature monitoring of the pressure sensor chip is highly important for the accurate compensation of the pressure sensor. In this study, we fabricate platinum (Pt) thin-film resistance temperature detectors (RTDs) on a SiC substrate by incorporating aluminum oxide (Al2O3) as the transition layer and utilizing aluminum nitride (AlN) grooves for alignment through microfabrication techniques. The composite layers strongly adhere to the substrate at temperatures reaching 950 °C, and the interface of the Al2O3/Pt bilayer remains stable at elevated temperatures of approximately 950 °C. This stability contributes to the excellent high-temperature electrical performance of the Pt RTD, enabling it to endure temperatures exceeding 850 °C with good linearity. These characteristics establish a basis for the future integration of Pt RTD in SiC pressure sensors. Furthermore, tests and analyses are conducted on the interfacial diffusion, surface morphological, microstructural, and electrical properties of the Pt films at various annealing temperatures. It can be inferred that the tensile stress and self-diffusion of Pt films lead to the formation of hillocks, ultimately reducing the electrical performance of the Pt thin-film RTD. To increase the upper temperature threshold, steps should be taken to prevent the agglomeration of Pt films.

Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

As third-generation semiconductors advance, gallium nitride (GaN)-based devices are gaining significant attention. However, the processing of GaN substrates directly affects device performance. This paper proposes an ICP etching-chemical–mechanical polishing (CMP) strategy to efficiently produce GaN single-crystal substrates with non-destructive, atomic-level surfaces. The process time is significantly reduced from 15 h to 1.5 h. The wet oxidation reaction during CMP eliminates impurities and defects from dry etching. FIB-STEM tests confirm that this method is non-destructive, as the ICP technique enables isotropic etching, and CMP introduces no new damage to the substrate. This approach enhances the productivity of large-size GaN single-crystal substrates, promoting their broader application in laser displays, RF devices, and power electronics.

Enhancing the Linear/Nonlinear Optical Properties of MoSe2 via Third-Generation Semiconductor Nanoheterojunctions for Nano-Optoelectronic Devices

Enhancing the Linear/Nonlinear Optical Properties of MoSe₂ via Third-Generation Semiconductor Nanoheterojunctions for Nano-Optoelectronic Devices

Femtosecond laser controllable annealing for color centers based on ion-implanted silicon carbide substrate

As a representative of third-generation semiconductors, silicon carbide serves as a new platform for quantum nano-optics with readable paramagnetic color centers such as silicon vacancies. The potential applications include biomedical imaging, quantum sensing and micro/nano environment detection. Color centers are usually prepared based on ion-irradiated substrates, then annealed at high temperature to increase the yield. Currently, annealing furnaces have been the main method to heat the substrate and achieve annealing of the whole sample. However, further exploration is still necessary for fine processing requirements such as specialized annealing regions with certain shapes. In this work, we applied femtosecond laser to achieve controllable annealing at micron scale, based on silicon carbide substrate after ion injection. The whole process of point, line and pattern annealing was realized. The annealing area demonstrates enhanced photoluminescence, attributed to silicon vacancy color centers. Raman and photoluminescence spectra reveal that the annealing effect is primarily influenced by the number of pulses per unit area. The mechanism of femtosecond laser annealing was introduced. Finally, the controllable annealing areas with various shapes were prepared based on the comprehensive optimal parameters (100 kHz pulse repetition frequency, 105 point annealing pulses, 10 μm/s line scanning speed). This annealing strategy demonstrates excellent stability and uniformity, as well as micron scale accuracy. Additionally, the excited state lifetime of silicon vacancy was extracted and quantified. The result means that femtosecond laser annealing enhances the optical properties and quantum application potential of color centers. This work can be further extended to other semiconductors as well as patterned modification of local surface/planes at some depth, and helpful to explore the mechanism and applications of femtosecond laser annealing.

Mechanism of glycine and H2O action in tribochemical mechanical polishing of single-crystal gallium nitride substrate

With the rapid development of the third-generation semiconductors, environmentally friendly tribochemical mechanical polishing (TCMP) is in urgent need and has been a research hot-spot. In this work, the mechanism of glycine (Gly) and H2O action in TCMP of single-crystal gallium nitride (SC-GaN) substrate is systematically studied. The experimental results indicate that the TCMP of SC-GaN substrate with 0.75 wt% Gly exhibits a higher surface quality and a 3-fold improvement in material removal rate than that with H2O. Based on first-principle calculations, the geometric configurations and interfacial interactions of the Gly/SC-GaN and H2O/SC-GaN heterostrutures are further explored. Charge transfer analysis shows that SC-GaN with lattice distortion of 0.4 Å transfers more electrons into Gly (0.202 e) than into H2O (0.128 e), which suggests the reaction between SC-GaN and Gly is more intense under friction by abrasives. The research of differential charge density and geometric properties (bond angles etc.) demonstrates that the –COOH functional group (Gly) has a higher reactivity than the –OH functional group (H2O). Based on the above findings, a microscopic material removal model for the TCMP of SC-GaN substrate with Gly is established. These results have potential applications in the semiconductor and microelectronics industries.

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations.

Silicon carbide (SiC), a third-generation semiconductor material, is pivotal for applications in new energy vehicles, aerospace, and high-speed electronics, owing to its superior properties. This study delves into the twin-induced growth behaviors of SiC crystals through molecular dynamics simulations at temperatures ranging from 2700 to 3200 K. It focuses on the wurtzite and zinc blende SiC structures, revealing dynamic defect behavior during growth, including an initial rise and subsequent decrease in vacancies, with particular emphasis on prevalent defects within zinc blende twin layers. A significant finding is the direct correlation between temperature and growth rates across different SiC structures, highlighting temperature control as essential for optimizing crystal quality. Furthermore, this work contributes to the analysis of the interactions of twin layers and their impact on structural stability and defect formation in SiC crystals. The insights gained here have substantial implications for the semiconductor industry, potentially enhancing device performance by better controlling growth conditions and defect management in SiC-based electronic and optoelectronic devices.

A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering

GaN, a third-generation semiconductor, has gained widespread attention owing to its high temperature resistance, wide bandgap, and high critical breakdown electric fields. Magnetron sputtering has a broad potential in the field of low-cost growth of GaN on account of high efficiency, superior quality, and convenient operation. However, challenges caused from the pure Ga targets with a huge refrigeration system need to be resolved for wide practices. Here, a new and cost-effective Ga target for magnetron sputtering was fabricated by utilizing the wetting properties of CuGa2 and Ga. Mixed microcrystalline and amorphous GaN films were obtained via reactive magnetron sputtering employing the Ga target. The average deposition rate is about 1.68 nm/min, and the average roughness is ∼7.45 ± 0.26 nm under 100 W of sputtering power. In addition, the sputtered GaN films were found to be wide-bandgap and p-type semiconductors with high transmittance, as revealed by x-ray photoelectron spectroscopy and absorption spectra. The GaN films display a bandgap of ∼3.60 eV and a transmittance exceeding 88.5% in the visible range. Furthermore, field-effect transistors and metal–semiconductor–metal photodetectors have been fabricated using the obtained GaN films, demonstrating favorable response characteristics. The prospects of microcrystalline/amorphous GaN films in sensing, power devices, and flexible electronics were forecasted. Overall, a low-cost and pervasive route of target fabrication process expands the possibilities of using low melting point metals in magnetron sputtering.

Densification, microstructure, thermal and mechanical properties of Si3N4 ceramics: Effect of Y2Si4N6C and MgSiN2 content

The rapid development of third-generation semiconductors urgently requires ceramic substrates with excellent performance. In this work, silicon nitride (Si3N4) ceramics were successfully prepared via gas-pressure sintering (GPS) using Y2Si4N6C and MgSiN2 as additives. The influence of Y2Si4N6C–MgSiN2 content on the liquid phase properties and microstructure of Si3N4 ceramics was clarified. The use of Y2Si4N6C–MgSiN2 not only did not introduce additional oxygen but also consumed SiO2 and purified the β-Si3N4 lattice. The increase in N/O formed a nitrogen-rich liquid phase, which led to the microstructure of Si3N4 ceramics having a bimodal distribution. The relationship between different degrees of bimodal microstructure and properties was explored. When the Y2Si4N6C–MgSiN2 content was 9 wt%, Si3N4 ceramics obtained excellent thermal and mechanical properties due to lattice purification, Si3N4/Si3N4 continuity increase, the largest average grain diameter, and a bimodal distribution microstructure with moderate grain size distribution. The thermal conductivity was 116.7 W m−1 K−1, the fracture toughness was 10.7 ± 0.35 MPa m1/2, and the bending strength was 767 ± 29.6 MPa.

The role of Cr in optimizing properties of Fe–B–C–P–Si–Mo–Cr metallic glasses for applications

With the rapid development of third-generation semiconductors, there is an urgent need to develop high-performance soft magnetic Fe-based metallic glasses tailored particularly for their high-frequency applications. In this work, new Fe76−yB7C7P7Si3Moy−xCrx (y = 0, 1, 2, 3 at.%, x ≤ y) alloys with relatively high glass-forming ability (GFA) were developed. The effects of replacing Mo with Cr on GFA, thermodynamic properties, soft magnetic properties, electrical resistivity (ρ), and corrosion resistance at different Fe contents were systematically studied. The possible causes of GFA variation were discussed. The results show that the addition of a small amount of Cr replacing Mo under different Fe contents would not lead to a decrease in GFA. The critical sizes of Cr-containing glassy alloys are 1–2.5 mm. These alloys possess relatively high saturation magnetization (Ms) of 1.29–1.41 T and lower coercivity (Hc) of 0.7–1.8 A/m, contributing to the reduction of hysteresis loss. In addition, Cr increases ρ of the alloys, reaching up to 162 μΩ cm, which is beneficial to reducing eddy current loss at high frequency. Furthermore, Cr effectively enhances corrosion resistance, thereby increasing the service life of the alloys in harsh environments. The role of Cr in these aspects makes it a beneficial element in soft magnetic metallic glasses for high-frequency applications.

Plasmonically-boosted high-performance UV self-biased photodetector based on SiC-based low-dimensional heterojunction via Pt nanostructures deposition

While possessing fully superior electrical, optical and mechanical capabilities, the third-generation semiconductor SiC is extensively recognized as one of the most important candidates to developing high-temperature CMOS, intense-radiation hard detectors, high-power electron devices, and other fields. However, the fabrication of low-dimensional SiC structures presents a challenge, limiting its forward-looking applications, particularly for the miniaturized and integrated self-powered ultraviolet (UV) photodetectors. Herein, a high-performance UV photodetector, which involving a p-SiC film, a Ga-doped ZnO microwire coated by Pt nanoparticles (PtNPs@ZnO:Ga MW), a single-layer graphene (Gr) as transparent electrode, was constructed. The device exhibits pronounced UV photodetection capabilities, containing a high On/Off ratio (>105), a peak responsivity approaching 0.266 A/W, a specific detectivity exceeding 1.50 × 1013 Jones, and an exceptional external quantum efficiency closing to 98.7% upon 335 nm illumination at 0 V bias. The detector shows an admirable performance and quite competitive within their class. In the device, the surface-coated PtNPs enable to optimize ZnO:Ga/SiC interfacial performances containing significant enhancement of photoelectric conversion efficiency, efficient suppression of surface/interface defects and trapping centers, and other parameters, thus giving rise to qualitative enhancement of the overall detector properties. Simultaneously, the use of Gr electrode as transparent window allows for maximum UV light absorption and boosts transport properties for the photocarriers. This work presents a valuable reference for the development of high-performance low-dimensional SiC-based photodetecting devices, exploring an important step toward potential optoelectronic applications.

Review on Power Cycling Reliability of SiC Power Device

The rising demand for increased integration and higher power outputs poses a hidden risk to the long-term reliable operation of third-generation semiconductors. Thus, the power cycling test (PCT) is widely regarded as the utmost critical test for assessing the packaging reliability of power devices. In this work, low-thermal-resistance packaging design structures of SiC devices are introduced, encompassing planar packaging with dual heat dissipation, press-pack packaging, three-dimensional (3D) packaging, and hybrid packaging. PCT methods and their control strategies are summarized and discussed. Direct-current PCT is the focus of this review. The failure mechanisms of SiC devices under PCT are pointed out. The electrical and temperature-sensitive parameters adopted to monitor the aging of SiC devices are organized. The existing international standards for PCT are evaluated. Due to the lack of authoritative statements for SiC devices, it is difficult to achieve comparison research results without consistent preconditions. Furthermore, the lifetimes of the various packaging designs of the tested SiC devices under PCTs are statistically analyzed. Additionally, problems related to parameter monitoring and test equipment are also summarized. This review explores the broader landscape by delving into the current challenges and main trends in PCTs for SiC devices.

Cu array fabrication: An environmentally sustainable approach through bicontinuous microemulsion differential electrodeposition for advanced power device packaging

BackgroundThe demand for high-power density packaging and integration processes for third-generation semiconductors, like silicon carbide (SiC), necessitates advancements beyond conventional Si-based packaging technologies. Cu-Cu direct bonding emerges as a promising alternative in semiconductor packaging. However, achieving Cu-to-Cu direct bonding with low-temperature, low-pressure, and short-time poses significant challenges. Transient Liquid Phase Bonding (TLP) offers a low-temperature joining solution, but prolonged reflow time hinders its wide applications. MethodsThis study introduces a novel strategy utilizing bicontinuous microemulsion (BME) electrodeposition to fabricate micron-sized Cu arrays, addressing these challenges in achieving Cu bonding. The core of Cu array manufacturing lies in the differential electrodeposition rate of Cu ions in the aqueous and organic phases. This principle is rooted in the excellent conductivity of the aqueous solution compared to the non-conductivity of the organic solution. Significant findingsWe elucidate the growth mechanism and validate a theory for achieving void-free optimal growth of Cu arrays within BME and compared the cross-sectional morphology and fracture modes of TLP solder joints with micron and nano Cu arrays. Furthermore, the ability to recycle the BME soft template aligns with green chemistry principles, offering a sustainable die-attach approach for third-generation semiconductor device packaging.

Bismuth as a buffer layer for metal contact with silicon carbide studied by In situ photoelectron spectroscopy

Silicon carbide (SiC) is a promising third-generation semiconductor due to its wide bandgap. However, the high Schottky barrier and metal-induced gap states (MIGS) at the metal/SiC interface present significant challenges for device fabrication, leading to high contact resistance and poor current delivery. This study proposes the use of bismuth (Bi), with its semimetallic properties and gap-state saturation effect, as a contact buffer layer to address these issues. We conducted a systematic investigation of the chemical and electronic characteristics of the Pt/Bi/4H-SiC(0001) system, fabricated via molecular beam epitaxy (MBE), using in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Our findings reveal weak bonding between the Bi buffer layer and the 4H-SiC(0001) surface, resulting in a slight downward band bending effect and the formation of a substantial dipole across the Bi/4H-SiC(0001) interface. Moreover, UPS spectra indicate a reduction in the work function of Pt/Bi/4H-SiC(0001), suggesting the potential for achieving low contact resistance. Notably, the Pt/Bi/4H-SiC(0001) system remains stable when exposed to 1.6×109 Langmuir of oxygen at room temperature, while a bare Bi buffer layer undergoes partial oxidation. These results provide a comprehensive understanding of the Pt/Bi/4H-SiC(0001) interfaces and strategies for improving metal/SiC contacts.

Construction of microstructures on the Cu substrate using ultrafast laser processing to enhance the bonding strength of sintered Ag nanoparticles

Silver nanoparticle (Ag NP) pastes become a potential die-attachment material with the increased electronic power density. However, the weakness of bonding interface between sintered Ag NPs and bare Cu substrate limits the applications of the Ag NPs paste, thereby reducing the shear strength of the sintered joint. In this work, ultrafast laser processing is utilized to enhance the bonding strength of the sintered Ag joint by fabricating a microstructure interface. The microstructure dimensions are tunable by controlling laser parameters, and then high-strength joints could be obtained. Different substrate microstructures were constructed, and the enhanced bonding mechanism was analyzed by characterizing the cross section and fracture surface morphologies of joints. The ultrafast laser processing could increase the surface energy of Cu substrates to form a more reliable connection with Ag NPs and more energy required for crack extension with the increasing connection area, thereby resulting in a significant improvement in the shear strength of the Ag NP joints. The patterned microstructures on the Cu substrate using this technique showed improved surface energy and increased number of connection areas on the substrate, showing potential for the use in third-generation semiconductors for highly reliable packaging.

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications.

Silicon carbide, as a third-generation semiconductor material, plays a pivotal role in various advanced technological applications. Its exceptional stability under extreme conditions has garnered a significant amount of attention. These superior characteristics make silicon carbide an ideal candidate material for high-frequency, high-power electronic devices and applications in harsh environments. In particular, corrosion resistance in natural or artificially acidic and alkaline environments limits the practical application of many other materials. In fields such as chemical engineering, energy conversion, and environmental engineering, materials often face severe chemical erosion, necessitating materials with excellent chemical stability as foundational materials, carriers, or reaction media. Silicon carbide exhibits outstanding performance under these conditions, demonstrating significant resistance to corrosive substances such as hydrochloric acid, sulfuric acid, nitric acid, and alkaline substances such as potassium hydroxide and sodium hydroxide. Despite the well-known chemical stability of silicon carbide, the stability conditions of its different types (such as 3C-, 4H-, and 6H-SiC polycrystals) in acidic and alkaline environments, as well as the specific corrosion mechanisms and differences, warrant further investigation. This Review not only delves deeply into the detailed studies related to this topic but also highlights the current applications of different silicon carbide polycrystals in chemical reaction systems, energy conversion equipment, and recycling processes. Through a comprehensive analysis, this Review aims to bridge research gaps, offering a comparative analysis of the advantages and disadvantages between different polymorphs. It provides material scientists, engineers, and developers with a thorough understanding of silicon carbide's behavior in various chemical environments. This work will propel the research and development of silicon carbide materials under extreme conditions, especially in areas where chemical stability is crucial for device performance and durability. It lays a solid foundation for ultra-high-power, high-integration, high-reliability module architectures, supercomputing chips, and highly safe long-life batteries.

Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process

Micro-light-emitting diodes (Micro-LEDs) are a new type of display device based on the third-generation semiconductor gallium nitride (GaN) material which stands out for its high luminous efficiency, elevated brightness, short response times, and high reliability. The contact between anode layers and P-GaN is one of the keys to improving the performance of the devices. This study investigates the impact of electrode structure design and optimized annealing conditions on the anode contact performance of devices. The Micro-LED device with the size of 9.1 μm whose electrode structure is ITO/Ti/Al/Ni/Cr/Pt/Au (100/50/350/100/500/500/5000 Å) exhibits a significant improvement in contact performance after annealing under the Ar gas atmosphere at 500 °C for 5 min. The optimized device exhibited a current of 10.9 mA and a brightness of 298,628 cd/m2 under 5 V. The EQE peak value of Device A is 10.06% at 400 mA.

Synchrotron radiation x-ray topography applied to nitride semiconductor crystals

Gallium nitride (GaN) and aluminum nitride (AlN), as examples of third-generation semiconductors, have attracted significant interest due to their remarkable physical attributes, including a wide bandgap, high breakdown voltage, exceptional chemical stability, and high thermal conductivity. These characteristics render GaN and AlN highly promising for use in power and (opto)-electronic devices. Consequently, there is a growing demand for high-quality GaN and AlN crystals on the centimeter scale. As the dislocation density in these materials decreases, the need for a reliable method of dislocation characterization becomes more pressing. Synchrotron radiation x-ray topography (SR-XRT) has emerged as a superior, nondestructive technique for the precise characterization of crystal defects. This review briefly introduced the principle of XRT, and its application in the analysis of dislocations in GaN and AlN crystals is summarized. By examining the relationship between the SR-XRT image contrast and the Burgers vectors of dislocations, it is possible to categorize wafer dislocations and determine the magnitude and direction of Burgers vectors. Additionally, SR-XRT facilitates the analysis of interactions between dislocations in GaN and AlN crystals. These analyses are instrumental in advancing the development of superior crystals. This review concludes with a discussion of the current challenges faced by SR-XRT and a projection of its future applications in characterizing third-generation semiconductor crystal materials. This review offers significant guidance for the characterization of nitride crystal defects using SR-XRT.

Prediction of the Structural, Mechanical, and Physical Properties of GaC: As a Potential Third-Generation Semiconductor Material.

Similar to GaN and SiC semiconductors, GaC may be a potential semiconductor because of the mixed elemental features of Ga and C. Unfortunately, the phase stability and mechanical and physical properties of GaC are unknown. To search for novel third-generation semiconductors, the present study delves into an in-depth analysis of the structural stability and electronic and optical properties of GaC by DFT calculations. Similar to GaN, three GaC phases are discussed. It is found that three GaC phases (two cubic phases and one hexagonal phase) are first predicted. The band gaps of Fm3̅m, F4̅3m, and hexagonal GaC are 0.449, 2.733, and 3.340 eV, respectively. In particular, the band gap of F4̅3m GaC and hexagonal GaC is bigger than that of GaN. Compared to GaN semiconductors, the C-2p state is in the valence band region across the Fermi level, which is beneficial to electronic mobility and electronic transport capacity near the Fermi level. In addition, three GaC phases exhibit ultraviolet properties. The first peak of three GaC phases produces the right migration compared to the GaN semiconductor. Therefore, the author predicts that GaC is a potential third-generation semiconductor material which is potentially used in future third-generation semiconductor industries.

High-efficiency green machining of single crystal 4H–SiC based on tribo-oxidation

High efficiency, high quality and green machining of single crystal silicon carbide (SiC) is an important issue in the third-generation semiconductor industry. In this paper, a novel machining method for single crystal SiC based on tribo-oxidation is proposed. The formula and preparation process of polysaccharide bonded soft abrasive tool were designed. Dry machining of C-face of 4H–SiC substrate was carried out with the prepared environmentally friendly abrasive tool sample. The material removal mechanism of the proposed machining method was preliminarily analyzed, and the material removal rate, surface roughness and subsurface residual stress were studied. The experimental results show that the maximum material removal rate of 4H–SiC can reach 1.03 μm/min with a corresponding average surface roughness of Sa 0.816 nm. The machined surface has no brittle flaw, and subsurface residual compressive stress exists with a maximum value of 58.9 MPa. The material removal mainly attributed to the active oxidation of SiC surface induced by the friction between alumina abrasives and SiC substrate. The proposed machining method has potential application value in thinning of SiC wafers.

Growth and properties of tantalum carbide coatings on graphite by TRD technique

The tantalum carbide-coated graphite material exhibits remarkable chemical stability, corrosion resistance, and heat shock resistance, enabling it to demonstrate excellent stability during the growth of wide bandgap semiconductors. Its application significantly enhances the quality of third-generation semiconductor crystals. Nevertheless, the high cost of this material hinders its widespread utilization in the field of wide bandgap semiconductors. To address this challenge, this study employs the Thermo-reaction deposition and diffusion (TRD) technique to successfully fabricate a tantalum carbide coating on the surface of graphite. Through thermodynamic analysis, this article validate the thermodynamic feasibility of preparing tantalum carbide coatings using the TRD process. To achieve a dense and uniform TaC coating on the graphite surface, we systematically investigate the effects of reducing agent content, reaction temperature, and reaction time on the microstructure of the coating. Experimental research has found that a molar ratio of B4C to Ta2O5 of 1:0.64 optimizes the coating uniformity. Deviations from this ratio, either higher or lower, can lead to coating inhomogeneity or even failure in coating formation. Additionally, this article determine that a reaction temperature range of 1200–1400 °C, coupled with a reaction time not exceeding 6 h, represents the most suitable conditions for preparing TaC coatings on the graphite surface. Finally, to evaluate the practical performance of the coated graphite, this article simulate the corrosive environment encountered during the physical vapor transport method for growing aluminum nitride single crystals. The results demonstrate a significant improvement in the corrosion resistance of the coated graphite. This enhancement is primarily attributed to the formation of a dense TaC coating on the graphite surface, which exhibits remarkable stability at elevated temperatures.