Thin Interfacial Layer Research Articles

Latent solvent-induced inorganic-rich interfacial chemistry to achieve stable potassium-ion batteries in low-concentration electrolyte.

Low-concentration electrolytes (LCEs) have attracted great attention due to their cost effectiveness and low viscosity, but suffer undesired organic-rich interfacial chemistry and poor oxidative stability. Herein, a unique latent solvent, 1,2-dibutoxyethane (DBE), is proposed to manipulate the anion-reinforced solvation sheath and construct a robust inorganic-rich interface in a 0.5 M electrolyte. This unique solvation structure reduces the desolvation energy, facilitating rapid interfacial kinetics and K+ intercalation in graphite. Additionally, enhanced anion-cation interactions promote the formation of a thin and robust interfacial layer with excellent cycling performance of potassium-ion batteries (PIBs). Graphite||perylene-3,4,9,10-tetracarboxylic dianhydride full cell exhibits a good capacity retention of 80.3% after 300 cycles, and delivers a high discharge capacity of 131.3 mAh g-1 even at 500 mA g-1. This study demonstrates the feasibility of latent solvent-optimized electrolyte engineering, providing a pathway of superior electrochemical energy storage in PIBs.

Asymmetric Proton-Exchange-Enhanced Lithium Niobate and Silicon Low-Temperature Direct Bonding with an Ultrathin Heterogeneous Interface.

The integration of lithium niobate (LiNbO3 or LN) and silicon (Si) has emerged as a promising heterogeneous platform for microelectromechanical systems (MEMSs) and photonic integrated circuits (PICs). Particularly, the lithium niobate on silicon (LNOS) architecture leverages the superior piezo-optomechanical properties of LN, making it compatible with superconducting circuits and quantum systems. This opens an avenue for the development of advanced quantum sensors and processors. However, existing LN and Si bonding methods suffer from inherent limitations, such as low interfacial strength and the formation of thick, amorphous interlayers. In this work, we present an asymmetric surface activation strategy to address these challenges. By employing proton-exchange-enhanced chemical activation on the LN surface and oxygen plasma treatment on the Si side, we have achieved remarkable bonding strengths of up to 10 MPa at a moderate annealing temperature of 150 °C. Notably, the bonding mechanism in our approach differs from that in conventional diffusion-based processes. Here, the dehydration condensation of surface functional groups results in an exceptionally thin interfacial layer, less than 2 nm thick, without the presence of amorphous LN. This innovative fabrication method for LNOS demonstrates superior reliability, piezoelectric performance, thermal management capabilities, and optical transmission qualities, paving the way for cutting-edge photonic and quantum applications.

Highly conductive and uniform PEDOT on poly(acrylic acid-vinylbenzyl chloride) functionalized surfaces

This study demonstrates increasing the uniformity and conductivity of poly(3,4-ethylene dioxythiophene) (PEDOT) thin films synthesized by vapor phase polymerization (VPP) through the utilization of a thin interfacial prime layer on the substrate surface. The prime layer, which is a copolymer of acrylic acid (AA) and vinylbenzyl chloride (VBC), was coated on the substrate surface using initiated chemical vapor deposition (iCVD) method. FTIR and XPS were used to analyze the structure of as-deposited films. The use of P(AA-VBC) copolymer as a prime layer allowed uniform and complete coverage of the oxidant solution on the substrate surface due to the hydrophilic nature of the AA constituent. During the VPP, the existence of the chlorine ions originating from the VBC constituent allowed in-situ doping of the as-deposited polymer, which contributes to the increased uniformity and the conductivity. The experimental studies were carried out to show the increase in uniformity, conductivity and adherence of the as-deposited PEDOT film in the presence of the prime layer. There was nearly a 4-fold increase in the conductivity of as-deposited PEDOT in the presence of the prime layer, with measured conductivity uniformity as high as 96% over a 5×5 cm2 glass surface.

Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate

Electron trapping in HfO2-based MOS structures was studied through pulsed capacitance-voltage (C-V) technique. 10 nm HfO2 layer was deposited by atomic layer deposition over a HF last treated Si substrate. The C-V curves were observed to shift to positive voltages driven by the positive applied voltage along the pulses, consistent with electron trapping due to tunneling transitions between the substrate and pre-existing defects within the oxide and the subsequent lattice relaxation through electron-phonon interaction. The dependences of the voltage shift for a given capacitance value (ΔVC) with stress bias and time, allowed to distinguish two mechanisms. An initial trapping process occurs for times shorter than the microsecond, probably associated with a thin non-stoichiometric SiOx interfacial layer, which is followed by a trapping process that starts after tens of μs and progressively slowed down, associated with traps within the HfO2 layer. Numerical simulations yield for the HfO2 traps an energy of 1.3 eV below the conduction band edge, decreasing exponentially with the distance from the Si interface with a characteristic length of 1.7 nm; and phonon and relaxation energies of 50 meV and 1 eV, respectively. These physical parameters are consistent with previous reports of electron trapping in HfO2 layers deposited on a controlled interfacial layer, suggesting that trapping properties of defects inside the HfO2 layer are insensitive to the treatment of the Si surface before HfO2 deposition. On the other hand, the observed large initial trapping suggests that the non-controlled SiOx interfacial region is more defective than a controlled one.

Comparison of surface layers responses under heavy truck loadings on new and rehabilitated pavement with different interface bond conditions

The integrity and functionality of road pavements are vital for ensuring safe and efficient transportation networks. However, surface layers are prone to various forms of deterioration. This study investigates the responses of two pavement structures—one newly constructed and one rehabilitated—under traffic loading, through experimental tests conducted on an accelerated pavement testing facility and numerical simulations using the Viscoroute©2.0 software. Focus is placed on surface layer behaviour, with an emphasis on understanding the behaviour of interfaces between the asphalt layers. The findings show that the new pavement structure exhibits good bonding and continuous strain distribution, while the rehabilitated pavement structure exhibits partial sliding at the interface and strain discontinuity. For the new pavement structure, the strains are well predicted using a bonded interface, while for the rehabilitated pavement structure, the strains are predicted using a thin elastic interface layer with a low elastic modulus.

Improved light transmission for III-V lasers monolithically integrated on Si platforms.

We propose a strategy to monolithically integrate active III-V lasers and passive dielectric devices, where the passive waveguides are fabricated after the MBE growth of the III-V semiconductors on a planar Si substrate. This avoids any airgap at the active/passive interface, replaced by a thin dielectric interface layer which improves the light coupling efficiency. We demonstrate GaSb DLs butt-coupled to SiN waveguides with ∼23% transmission after 2 mm SiN, corresponding to ∼35% transmission at the active/passive interface. We propose several routes to further increase the transmission factor. This strategy eliminates the need for trenches or pockets, which have been shown to cause poor quality material near the dielectric stack facet and to affect the laser lifetime. This strategy thus paves the way for an optimized route to monolithically integrate active and passive photonic devices with a high light coupling efficiency.

Achieving photomultiplication in organic-MOF complex via interface and band engineering

This work studies a hybrid broadband photodetector with and without metal–organic framework nanosheets with an inverted structure. It is observed that an inverted structure provides photomultiplication in the devices with both positive and negative biases. This phenomenon is believed to be due to a non-uniform TiO2/active layer interface where the porosity of TiO2 facilitates structural traps, in turn achieving photomultiplication in P3HT: PCBM (1:1) devices. Meanwhile, in photodetectors with an active layer of P3HT:ZnTCPP:PCBM (1:0.5:1), photomultiplication is attributed to interface traps and band alignment due to ZnTCPP nanosheets. The presence of ZnTCPP reduces the dip in EQE at 370–460 and 530–610 nm range, thus improving broadband detection (300–700 nm). Adding ZnTCPP to the devices results in improved rise and fall times. The on–off response is also relatively stable for the devices with ZnTCPP and has high detectivity (1011 Jones). Thus, this study sheds light on the role of a thin interface layer of TiO2 in photomultiplication and improving performance parameters with ZnTCPP nanosheets.

Controllable In situ Polymerization of 1,3‐Dioxolane via Sustained‐Release Effect for Solid‐State Lithium Metal Batteries

AbstractIn situ formed poly(1,3‐dioxolane) (PDOL) electrolytes are of great interest due to the facile process and the improved interface contact. However, the practical application of in situ PDOL electrolytes is still plagued by fast solidification time (liquid state) and poor high‐voltage stability (solid state). Herein, the slow‐release carriers triglycidyl isocyanurate (TGIC), which play dual roles as initiator sustained‐release and network confinement, can tune DOL curing time and cathode/electrolyte interface chemistry is demonstrated. Specifically, the electronegative C≐O and epoxy groups in TGIC have an affinity with BF3, the decomposition product of lithium bis(oxalate)borate (LiDFOB), delaying BF3 protonation reaction and thus extending DOL solidification time. In addition, the epoxy groups in TGIC serve as crosslinking sites to form in situ crosslinked polymer electrolytes (TPDOL@FEC). The corresponding network structure suppresses the contact reaction between high‐fluidity organic components and cathodes, generating a uniform and thin cathode electrolyte interface layer. As a result, the TPDOL@FEC precursor solution can remain its liquid state even after resting 24 h at room temperature. The assembled LiNi0.6Co0.2Mn0.2O2||TPDOL@FEC||Li cells display an impressive capacity retention of 91.5% after 100 cycles at 4.4 V (0.5 C). This study is expected to be a leap in the pursuit of practically feasible in situ formed PDOL electrolytes.

Ohmic contacts to n-type SiC: Influence of Au and Ta intermediate layers

In this study, the optimization of metal-semiconductor contacts to reduce the contact resistance of ohmic contacts on n-type 4H-SiC. The commonly used Ni/Au metal scheme served as a reference. We introduced two novel metal schemes: (i) incorporating a thin interfacial Au layer (2 nm) into Ni/Au, resulting in Au/Ni/Au, and (ii) introducing a thin intermediate barrier layer of Ta (20 nm) into Ni/Au, resulting in Ni/Ta/Au. Rapid thermal annealing (RTA) is performed at different temperatures and durations and the electrical characteristics of the contacts are measured. X-ray diffraction analysis was employed to investigate the intermediate phases formed during annealing. In the Au/Ni/Au metal scheme, the presence of Au at the interface promoted the formation of additional phases of nickel-silicide (Ni3Si and Ni3Si2). Compared to the traditional Ni/Au scheme, the modified metal schemes led to lower surface roughness and reduced contact resistance. Specific contact resistivity values are calculated, 2.2 × 10−5 Ω-cm2 for Ni/Au, 1.37 × 10−5 Ω-cm2 for Au/Ni/Au, and 4.84 × 10−5 Ω-cm2 for Ni/Ta/Au. This research offers valuable insights for the selection of metal schemes in designing ohmic contacts on n-type SiC, with potential applications in various semiconductor device technologies.

Harnessing a WOx-based flexible transparent memristor synapse with a hafnium oxide layer for neuromorphic computing.

Transparent memristor-based neuromorphic synapses are expected to be specialised devices for high-speed information transmission and processing. The synaptic linearity and potentiation/depression cycles are imperative issues for the application of memristors. This work explores a memristor for improving switching uniformity by introducing a thin HfOx interfacial layer as a diffusion-limiting layer sandwiched between WOx and ITO bottom electrodes. An optimized HfOx thickness not only provides the best switching properties but also shows superior synaptic properties. The optimized 15 nm thin WOx layer can retain the memristor's excellence in P/D linearity, a cycling stability of 494 epochs and image recognition up to 3 mm bending, making it suitable for flexible devices. The artificial synapse is capable of reversible short-term and long-term learning behaviors confirmed by spike-timing-dependent-plasticity (STDP) results. X-ray photoelectron spectroscopy confirms the device composition and provides the oxygen vacancy concentration at the WOx/HfOx interface to realize the switching mechanism. The thicknesses of the different layers are estimated from the high-resolution transmission electron microscopy observations. The fabricated device exhibits 92.2% transparency, as confirmed by the UV-Vis spectrum.

Joule heating for structure reconstruction of hard carbon with superior sodium ion storage performance

Hard carbon anode for sodium ion batteries still remains many challenges including insufficient cycling life and initial Coulombic efficiency (ICE), weak rate capability and poor compatibility in common ester electrolytes. Here, we propose a Joule heating post-treatment including multifield sintering method to reconstruct the structure of hard carbon from thick graphene layers to more disordered vortex layer structure composed of thin and curved graphite-like domains. The molecular dynamics simulation and differential charge density distribution demonstrate the crucial effect of electric field in strengthening the interaction between the polar molecule groups and the graphene layer, leading to the distortion and expanding of graphene layer. This is a universal and highly efficient strategy to modify various hard carbons within minutes. The optimized hard carbon anode exhibits exceptional rate capability and cycling stability with a high retention rate of 88.4% after 15,000 cycles at 10C in ether electrolyte. It also displays remarkably improved reversible capacity, initial Coulombic efficiency ICE of 89.5% and cycling stability in ester electrolyte. It is revealed by in-situ electrochemical impedance spectroscopy and atomic force microscopy that the spontaneous formation of a thin, stable and inorganic substance-rich solid electrolyte interface layer with significantly improved mechanical property is largely responsible for the outstanding sodium-ion transport kinetics and long lifespan.

Preparation of protein-polyphenol-polysaccharide ternary complexes to regulate the interfacial structure of emulsions: Interfacial behavior and emulsion stability

This study investigated the effect of protein-polyphenol-polysaccharide ternary complexes prepared from polysaccharides with different charges on emulsion stability. Sodium alginate (ALG), chitosan hydrochloride (CHC) and oat β-glucan (OG) were used as representational polysaccharides. The interfacial rheology showed that CHC increased the adsorption rate of WPI-rutin complexes at the oil-water interface, while ALG and OG reduced the adsorption rate. Furthermore, WPI-Rutin-CHC complexes effectively reduced the interfacial tension from 11.16 mN/m to 9.41 mN/m. Compared with other ternary complexes, the oil-water interface layer composed of WPI-Rutin-CHC complexes had the highest interfacial viscoelasticity and mechanical strength. Moreover, the emulsion prepared by WPI-Rutin-CHC complexes had the lowest instability index (0.17) and the smallest droplet size (660 nm), indicating the highest stability among all the emulsions. The microstructure results indicated that the thick interfacial layer was observed in WPI-Rutin-CHC emulsion, while thin interfacial layers were found in other emulsions. These results revealed the stability mechanism of emulsions prepared by ternary complexes and provided guidance for the preparation of stable emulsions.

Cooperation mechanism between the vacuum levels and interface dipole energy of triboelectric materials for real-time vibration recognition

Triboelectric Nanogenerator (TENG) device, acting as sensors of energy harvesting and material identification, are attracting intensive attention. Nevertheless, vibration wave recognition cannot be achieved by the developed devices owing to device structure and working mechanism limitations. Here, a cooperation mechanism between the vacuum level and interface dipole energy of triboelectric materials is proposed to explore triboelectric charge generation and migration. Hence, metallized cottons of high specific surface area encapsulated by polydimethylsiloxane (PDMS) of low elastic modulus are developed as TENG-based sensors to realize vibration recognition. The results indicate electrons flow from PDMS to metallized cotton with the generation of an extremely thin interfacial dipole barrier layer because the vacuum level of metallized cotton is higher than that of PDMS, resulting in the accumulation of triboelectric charges on the PDMS surface under vibration, further leading to generating distinct triboelectric signals that can be simply differentiated using signal amplitude or peak shape with 98.3 % recognition accuracy for vibration waveform. Besides, combined with the deep machine learning and triboelectric effect, a vibration perception system integrated with a TENG-based sensor, data processing and display modules is also developed for real-time vibration monitoring. This work contributes to further clarifying the theoretical mechanisms of triboelectric charge excitation under vibration.

Complex dynamics of partially freezable confined water revealed by combined experimental and computational studies

We investigate water dynamics in mesoporous silica across partial crystallization by combining broadband dielectric spectroscopy (BDS), nuclear magnetic resonance (NMR), and molecular dynamics simulations (MDS). Exploiting the fact that not only BDS but also NMR field-cycling relaxometry and stimulated-echo experiments provide access to dynamical susceptibilities in broad frequency and temperature ranges, we study both the fully liquid state above the melting point Tm and the dynamics of coexisting water and ice phases below this temperature. It is found that partial crystallization leads to a change in the temperature dependence of rotational correlation times τ, which occurs in addition to previously reported dynamical crossovers of confined water and depends on the pore diameter. Furthermore, we observe that dynamical susceptibilities of water are strongly asymmetric in the fully liquid state, whereas they are much broader and nearly symmetric in the partially frozen state. Finally, water in the nonfreezable interfacial layer below Tm does not exhibit a much debated dynamical crossover at ∼220 K. We argue that its dynamics is governed by a static energy landscape, which results from the interaction with the bordering silica and ice surfaces and features a Gaussian-like barrier distribution. Consistently, our MDS analysis of the motional mechanism reveals a hopping motion of water in thin interfacial layers. The rotational correlation times of the confined ice phases follow Arrhenius laws. While the values of τ depend on the pore diameter, freezable water in various types of confinements and mixtures shows similar activation energies of Ea ≈ 0.43 eV.

Investigation of scale formation and degeneration of silicide coating on Nb–Si based alloy in the temperature range from 1250 °C to 1560 °C

Nb silicide coatings modified with active elements have good oxidation resistance, but there is a lack of systematic research on their oxidation behavior at high temperatures above 1250 °C. The aim of this work is to investigate the oxidation behavior of an Al–Y modified silicide coating on Nb–Si based alloy in the temperature range from 1250 °C to 1560 °C. After oxidation at 1250 °C, the scale displays a typical layered structure consisting mainly of a TiO2 outer layer, an amorphous SiO2 matrix layer embedded with TiO2 and ZrSiO4, and an inner layer consisting of SiO2 and Cr2O3. Above 1350 °C, the evaporation reaction of Cr2O3 into CrO3 (g) is significantly accelerated and Cr2O3 disappeared gradually with temperature or time. The TiO2 layers covering on the scales formed at 1250–1500 °C grow along the crystallographic orientation of [100]. The micropores formed on the surface of TiO2 should be attributed to the further oxidation of Cr2O3 into volatile oxide CrO3 (g). The scales exhibit a similar structure consisting mainly of a SiO2 glass matrix embedded with ZrSiO4 and a surface TiO2 layer until 1500 °C. Above the eutectic temperature of SiO2–TiO2 system, the scale is mainly composed of a matrix layer of SiO2–TiO2 eutectic embedded with block TiO2 particles, and a thin SiO2 interface layer at 1560 °C. The degeneration path of the (Nb,X)Si2 coating is (Nb,X)Si2 → (Ti,Nb)5Si4 → γ-(Nb,X)5Si3.

Molecule Crowding Strategy in Polymer Electrolytes Inducing Stable Interfaces for All-Solid-State Lithium Batteries.

All-solid-state lithium batteries with polymer electrolytes suffer from electrolyte decomposition and lithium dendrites because of the unstable electrode/electrolyte interfaces. Herein, a molecule crowding strategy is proposed to modulate the Li+ coordinated structure, thus in situ constructing the stable interfaces. Since 15-crown-5 possesses superior compatibility with polymer and electrostatic repulsion for anion of lithium salt, the anions are forced to crowd into a Li+ coordinated structure to weaken the Li+ coordination with polymer and boost the Li+ transport. The coordinated anions prior decompose to form LiF-rich, thin, and tough interfacial passivation layers for stabilizing the electrode/electrolyte interfaces. Thus, the symmetric Li-Li cell can stably operate over 4360h, the LiFePO4||Li full battery presents 97.18% capacity retention in 700 cycles at 2C, and the NCM811||Li full battery possesses the capacity retention of 83.17% after 300 cycles. The assembled pouch cell shows excellent flexibility (stand for folding over 2000 times) and stability (89.42% capacity retention after 400 cycles). This work provides a promising strategy to regulate interfacial chemistry by modulating the ion environment to accommodate the interfacial issues and will inspire more effective approaches to general interface issues for polymer electrolytes.

Imaging ultra-weak UV light below 100 pW cm-2 using a 4H-SiC photodetector with an Al2O3 interfacial layer.

Weak light detection is crucial in various practical applications such as night vision systems, flame monitoring, and underwater operations. Decreasing the dark current of a photodetector can effectively mitigate noises, consequently enhancing the signal-to-noise ratio and overall weak light detection performance. Herein, we demonstrate a 4H-SiC UV photodetector capable of detecting extremely weak UV light. This device comprises a photosensitive layer of 4H-SiC, two TiN electrodes and an atomically thin Al2O3 interfacial layer between TiN and the C surface of 4H-SiC. Under 360 nm UV light illumination, the proposed Al2O3 device demonstrates an ultra-low dark current of 18 fA, possibly benefiting from the effective passivation of interfacial carriers, and a boosted photo-to-dark current ratio of 6.7 × 107. Consequently, it achieves a weak-light detection limit as low as 31.8 pW cm-2, significantly outperforming the control device lacking Al2O3. When compared to previously reported SiC photodetectors, our Al2O3 device boasts an exceptional large linear dynamic range of 172 dB. Leveraging this, we construct a photodetector array capable of clearly imaging an object under ultra-weak light illumination below the 100 pW cm-2 level. The proposed photodetector represents a significant advancement in the development of highly sensitive image sensors for weak light detection.

Enhanced battery capacity and cycle life due to suppressed side reactions on the surface of Ni-rich LiNi0.8Co0.1Mn0.1O2 cathode materials coated with Co3(PO4)2

This study explores a strategy to mitigate capacity fading in secondary batteries, which is primarily attributed to side reactions caused by residual Li impurities (LiOH or Li2CO3) on the surface of Ni-rich LiNi0.8Co0.1Mn0.1O2 (NCM811) layered cathode materials. By applying a 1.5 wt% Co3(PO4)2 coating, we successfully formed a thin and stable LiF cathode-electrolyte interface (CEI) layer, which resulted in decreased battery resistance and enhanced diffusion of Li+ ions within the electrolyte. This coating significantly improved the interface stability of NCM811, leading to superior battery performance. Specifically, the discharge capacity of uncoated NCM811 was 190 mA h g−1 at a charge of 4.3 V and a rate of 0.1C, whereas the 1.5Co3(PO4)2/NCM811 exhibited an increased capacity of 213 mA h g−1. Furthermore, the Co3(PO4)2 coating effectively reduced the levels of LiOH and Li2CO3 on the NCM811 surface to only 0.1 %, thereby minimizing adverse side reactions with the electrolyte salt (LiPF6), cation mixing between Ni2+ and Li+, and defects at the NCM811 interface. As a result, battery lifespan was significantly extended. This study presents a robust approach for enhancing battery stability and performance by efficiently reducing residual Li+ ions on the surface of NCM811 through strategic Co3(PO4)2 coating.

Enhanced photoelectrochemical water splitting by a 3D hierarchical sea urchin-like structure: ZnO nanorod arrays on TiO2 hollow hemisphere

A hierarchical sea urchin-like hybrid metal oxide nanostructure of ZnO nanorods deposited on TiO2 porous hollow hemispheres with a thin zinc titanate interface layer is specifically designed and synthesized to form a combined type I straddling and type II staggered junctions. The HHSs, synthesized by electrospinning, facilitate light trapping and scattering. The ZnO nanorods offer a large surface area for improved surface oxidation kinetics. The interface layer of zinc titanate (ZnTiO3) between the TiO2 HHSs and ZnO nanorods regulates the charge separation in a closely coupled hierarchy structure of ZnO/ZnTiO3/TiO2. The synergistic effects of the improved light trapping, charge separation, and fast surface reaction kinetics result in a superior photoconversion efficiency of 1.07% for the photoelectrochemical water splitting with an outstanding photocurrent density of 2.8 mA cm−2 at 1.23 V versus RHE.

NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature

NiO/Ga2O3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga2O3 heterojunction diodes and formation of NiGa2O4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga2O3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga2O3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa2O4 layer between NiO and Ga2O3. First-principles defect calculations find that NiGa2O4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/Ga2O3 diodes with intentionally grown ∼5 nm thin spinel-type NiGa2O4 interfacial layers show an excellent device ON/OFF ratio of >1010 (± 3 V), VON of ∼1.9 V, and increased breakdown voltage of ∼1.2 kV for an initial unoptimized 300 μm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.