X-ray Diffraction Patterns Of Thin Films Research Articles

Four-phases characterization of synthesised CeO2 thin films: Effect of molarity on structural, optical, physical properties and gamma-ray attenuation parameters

A group of novel CeO 2 thin films were synthesised using ultrasonic spray pyrolysis process. The composition ratios of these films were modified to investigate changes in their optical, surface, electrical, and structural characteristics. Absorbance spectra in the range 300–900 nm was acquired. Transmittance in the visible area was determined to be 50%. The optical band gap was reported to vary between 3.38 and 3.52eV using absorbance spectra. X-ray diffraction was used to analyse the films' structure, while atomic force microscopy was used to determine the surface roughness values. Spectroscopic ellipsometry and the Cauchy–Urbach model were used to calculate the thicknesses. Electrical resistivity values were determined using a four-probe system. CeO 2 thin film X-ray diffraction patterns validated the polycrystalline cubic fluorite structure. According to the data, the deposited films expand preferentially in the (2 0 0) direction. The films were found to have a high resistivity of 10 6 Ω cm. We also evaluated the nuclear radiation shielding properties of CeO 2 thin films in the 0.015–15 MeV photon energy range. The results indicated that CeO 2 thin film exhibits promising half value layers of 0.00169 cm, 0.14055 cm, 1.62665 cm, and 2.30273 cm, respectively, for 0.015 MeV, 0.15 MeV, 1 MeV, and 15 MeV CeO 2 films have been determined to be worth working on and may be promising materials for optoelectronic and nuclear security applications.

Comparative study of in vitro apatite-forming abilities of highly ordered rutile nanorod arrays fabricated on cpTi and Ti6Al4V alloys

ABSTRACTThe surfaces of commercially available pure titanium (cpTi) and Ti6Al4V alloy specimens were modified to form highly ordered rutile nanorod arrays by chemical treatment and subsequent aging treatment. The densities of the rutile rods were (1.04 ± 0.06) ×103 and (0.70 ± 0.10) ×103 μm–2 for the cpTi and Ti6Al4V alloy specimens, respectively. Both the rutile nanorod arrays on the cpTi and Ti6Al4V alloy specimens deposited apatite particles when soaked in simulated body fluid (SBF) for one day. After soaking for various other periods, scanning electron microscopy images and thin-film X-ray diffraction patterns of these specimens showed that the cpTi specimens exhibited a superior rate of apatite nucleation and favored the formation of numerous apatite particles with larger diameter. This superior apatite-forming ability of the cpTi specimens can be attributed to the dense, thick titania layers with higher rutile nanorod density on their surfaces.

Comparative study of structural and morphological properties of nanostructured CuIn2n+1S3n+2(n = 0, 1 and 2) thin films produced by oblique angle deposition

CuInS 2 , CuIn 3 S 5 and CuIn 5 S 8 films were grown by thermal evaporation using oblique angle deposition technique. During the deposition, the substrate temperature was maintained at T s = 150 °C and the deposition angle was fixed at α = 0° and 85°. The powders and thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). From the XRD data of powders, we calculated the lattice parameters of the structure for the different compounds. XRD patterns of thin films revealed that all samples deposited at α = 0° were polycrystalline. Indeed, CuInS 2 and CuIn 3 S 5 films had a chalcopyrite structure with preferred orientation along (1 1 2) while CuIn 5 S 8 films exhibit a spinel structure with preferred orientation along (3 1 1). However, CuIn 2 n +1 S 3 n +2 with n = 0, 1 and 2 films deposited at α = 85° were amorphous in nature. The surface and cross-section of the films were observed by AFM and SEM. The oblique angle deposition films showed an inclined columnar structure, with columns tilting in the direction of the incident flux. The surface roughness of the different films deposited, respectively, at α = 0° and 85° was determined by two methods (AFM and spectrophotometric analysis). The obtained values show an increase of the surface roughness by increasing the deposition angle α .

The Characteristic of Formation CoSi2/Si Thin Film by the RF-Sputtering Method

In this paper, the thin films with thicknesses of about were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of , RF power of 60 watts, deposition time of 30 minutes, and the vacuum of Torr. The annealing treatments of the thin film were performed from 500, 700 and for 1h in air ambient by an electric furnace. In order to investigate the thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the thin film.

Growth of ferromagnetic semiconducting cobalt-doped anatase titanium thin films

Heteroepitaxial and polycrystalline anatase Ti1−xCoxO2 (0.0⩽x⩽1.0) thin films were prepared by soft chemical processing on LaAlO3 (001) and thermally oxidized silicon substrates and the crystallinity and magnetic properties were investigated. X-ray diffraction (XRD) spectrum of the Ti1−xCoxO2 films on LaAlO3 (001) substrate shows (004) and (008) peaks of heteroepitaxy anatase without any impurity phase. The full-width at half maximum of the (004) peak rocking curve is 0.4°. The XRD patterns of thin films deposited on the SiO2/Si(001) substrate are anatase type polyscrystalline structure. Microstructural characterization on Ti1−xCoxO2 thin film employing atomic force microscope showed island type grains in 20 nm in size and the surface roughness of typical thin films was 1.5 nm. Sharp hysteresis loops, indicating a well-ordered ferromagnetic structure, appeared in the magnetization versus magnetic field curves when the magnetic field was applied in the plane of the film. This result clearly indicates that the anatase Ti1−xCoxO2 thin films fabricated on LaAlO3 (001) by soft chemical process have crystal quality equivalent to high-vacuum technique.

Interdiffusion in amorphous Ni 65Ti 35/Ni 35Ti 65 bilayer film studied by Auger electron spectroscopy

Interdiffusion in an amorphous alloy film of the NiTi system is studied by Auger electron spectroscopy (AES). An amorphous Ni 65Ti 35/Ni 35Ti 65 bilayer film which has been produced by evaporation on an Si substrate is subjected to diffusion annealing at 573 K for various time periods. The concentrations of the Ni and Ti species were determined as a function of the depth from the top surface. Thin film X-ray diffraction patterns of the sample indicate that the amorphous structure is maintained throughout the annealing. The AES depth profiles are processed according to an error function analysis. An interdiffusion coefficient D ≈ 5 × 10 −21 m 2s −1 is obtained for this temperature, which is in reasonable agreement with our previous result for the interdiffusion in an Ni/Ti multilayer.

Fabrication of La2Ti2O7thin films by a sol-gel technique

Abstract Sol-gel thin films of La2Ti2O17 were deposited on fused silica and Si( 100) substrates by a spin-coating process. The La2Ti2O17 precursor solution for the spin-coating was prepared from lanthanum acetylacetonate and titanium iso-propoxide dissolved in 2-methoxyethanol. Crystalline and crack-free films of ∼ 0.3 μm thickness were deposited on the above sulastrates using a single coating and followed by annealing at a temperature of 800 "C. Microstructural studies revealed that these films contained extremely fine grains of ∼ 0.1 μm. Thin film X-ray diffraction patterns indicated the formation of grain oriented films along [100] direction on these substrates.

Properties and microstructure of thin LiNbO3 films prepared by a sol-gel process

Thin LiNbO3 films were prepared from polymerized sol-gel precursor solutions having various concentrations and water:alkoxide ratios in an effort to investigate the effects of these and other processing variables on the resultant film properties and microstructure. Films deposted on silicon substrates were mostly amorphous when pyrolyzed at 435°C for 30 min. Randomly oriented polycrystalline films having distinctive microstnietures were produced using longer heating times or higher temperatures. All of the films exhibited low refractive indices due to porosity, which was attributed to the low level of hydrolysis water required to produce stable polymeric precursor solutions. When single-crystal LiNbO4 was used as the substrate, epitaxial growth of the film resulted. This ideal case establishes the feasibility of producing epitaxial films via sol-gel processing. All films were characterized by transmission electron microscopy (TEM) and thin-film x-ray diffraction patterns.

Formation, properties, and ion irradiation effects of hexagonal structure MoN thin films

Thin films (100-120 nm) of hexagonal structure MoN have been fabricated by reaction of Mo films in an NH 3 atmosphere. The as-formed films possessed superconducting transition temperatures T c ≃ 13 K, with resistance ratios r = R(296K)/R(T c ) in the range 5 to 10, low-temperature normal state resistivities ρ o = 4 to 10 μ Ω-cm, and extrapolated upper critical fields H c2 (0) = 4.0 to 5.0 T. Thin film X-ray diffraction patterns revealed no visible second phase, with measured lattice parameters close to literature values. The effects of lattice disorder on the superconducting and electronic properties were investigated by irradiation with nitrogen ions of energy 45 and 340 keV, resulting in a nearly uniform damage profile without the introduction of any new chemical species. The results indicate that ordered hexagonal MoN shows some of the unusual properties characteristic of moderate-to-high T c transition metal compounds, but is relatively insensitive to degradation of the superconducting properties by lattice disorder. For ion fluences Φ up to 2 × 1016N-ions/cm2, T c is found to decrease monotonically and saturate at 9.5 K, almost 3/4 the initial value, while H c2 (0) undergoes a gradual increase to 11T.