SnO2 Thickness Research Articles

Design and performance exploration of Pb-free low-cost all-inorganic perovskite-inspired CuAgBi2I8 solar cells: theoretical approach

Abstract Organic–inorganic halide perovskites have demonstrated great potential for photovoltaic applications owing to their unprecedented optoelectronic properties and low manufacturing costs. However, the commercialization of this technology is hindered by its thermal instability and inherent toxicity. In this study, SCAPS-1D simulation software was used to study the performance of solar cell based on CuAgBi2I8, which is a novel inorganic non-toxic lead-free perovskite-inspired material. Different electron transport layers (TiO2, In2S3, ZnO, Zn0.75Mg0.25O,SnO2 and SrTiO3) and hole transport layers (CuI, PEDOT:PSS, CuSCN and Cu2O) were studied, our research indicated that SnO2 and NiO formed the optimal combination. Further analysis revealed that the optimal absorption layer thickness was 900 nm, the absorption layer doping concentration should be less than 1 × 1013 cm−3 and the defect density should be less than 1 × 1014 cm−3. The optimal thickness of SnO2 and NiO was 30 nm, the optimal doping concentration of SnO2 and NiO was 1 × 1020 cm−3, the defect density of absorber layer/SnO2 and absorber layer/NiO interfaces should be less than 1 × 1012 cm−3, C was the optimal back electrode material. Consequently, the optimal device configuration was identified as FTO/SnO2/CuAgBi2I8/NiO/C, the efficiency was improved from original 2.76% to 19.10% after above optimization. These results indicate that solar cell with CuAgBi2I8 as the absorber layer is a potential alternative to organic–inorganic lead halide perovskite solar cells.

Construction of type-II SnO2/InGaN nanorods heterostructure toward high photoelectrochemical performance

Exploring highly efficient and stable photoelectrode material is essential for high-performance photoelectrochemical (PEC) water-splitting applications. III-nitride semiconductors, particularly InGaN, have been considered as prospective materials for PEC hydrogen evolution. However, their surface states and other recombination centers, which enhance the charge recombination kinetics, are bottlenecks for the high PEC performance. In this work, we report the construction of type-II heterojunction by sputter depositing SnO2 on InGaN nanorods (NRs) to promote interfacial carrier transport and thereby enhance PEC performance. The energy band offsets at the SnO2/InGaN NRs interface were analyzed by x-ray photoelectron spectroscopy. Type-II heterojunction was defined at the SnO2/InGaN NRs interface with a valence band offset of 0.77 eV and conduction band offset of 0.25 eV. The photocurrent density of the SnO2/InGaN NRs photoanode is 7.09 mA/cm2 at 0.77 V vs Ag/AgCl electrode with 80 nm SnO2 thickness, which is ∼14-fold higher than that of the pristine InGaN NRs photoanode. Furthermore, the applied bias photo-to-current efficiency of SnO2/InGaN NRs photoanode records 3.36% at 0.77 V vs Ag/AgCl electrode. The enhanced PEC performance is mainly ascribed to the formation of high-quality SnO2/InGaN NRs heterojunction that enforces the directional charge transfer and substantially boosts the separation of photogenerated electron–hole pairs at the interface of InGaN NRs and SnO2. Overall, this work sheds light on the promising strategy to design and fabricate III-nitride nanostructures-based photoelectrodes for feasible PEC water-splitting applications.

Large-Area Printed Oxide Film Sensors Enabling Ultrasensitive and Dual Electrical/Colorimetric Detection of Hydrogen at Room Temperature.

Commercial hydrogen (H2) sensors operate at high temperatures, which increases power consumption and poses a safety risk owing to the flammable nature of H2. Here, a polymer-noble metal-metal oxide film is fabricated using the spin-coating and printing methods to realize a highly sensitive, low-voltage operation, wide-operating-concentration, and near-monoselective H2 sensor at room temperature. The H2 sensors with an optimized thickness of Pd nanoparticles and SnO2 showed an extremely high response of 16,623 with a response time of 6 s and a recovery time of 5 s at room temperature and 2% H2. At the same time, printed flexible sensors demonstrate excellent sensitivity, with a response of 2300 at 2% H2. The excellent sensing performance at room temperature is due to the optimal SnO2 thickness, corresponding to the Debye length and the oxygen and H2 spillover caused by the optimized coverage of the Pd catalyst. Furthermore, multistructures of WO3 and SnO2 films are used to fabricate a new type of dual-signal sensor, which demonstrated simultaneous conductance and transmittance, i.e., color change. This work provides an effective strategy to develop robust, flexible, transparent, and long-lasting H2 sensors through large-area printing processes based on polymer-metal-metal oxide nanostructures.

Pd nanoparticles decorated SnO2 ultrathin nanosheets for highly sensitive H2 sensor: Experimental and theoretical studies

This study is attempted to improve the hydrogen sensing performance of SnO2 based sensors by simultaneously employing two strategies of morphology control and noble metal loading. Therefore, SnO2 ultrathin nanosheets with thickness not exceeding 3.5 nm were successfully synthesized by a hydrothermal method and then different content of Pd nanoparticles were uniformly loaded onto SnO2 surface by in situ reduction with ascorbic acid. The gas sensing properties demonstrated that the introduction of Pd not only altered the selectivity of the SnO2 sensor from ethanol to hydrogen, but also significantly improved the gas sensitivity and reduced the working temperature. And the optimal 1.0%Pd/SnO2 sensor owned the highest sensitivity (75), fastest response-recovery property (21 s/13 s) to 20 ppm of hydrogen at 220 °C, and the actual detection limit is as low as 0.1 ppm. Furthermore, 1.0%Pd/SnO2 sensor exhibited excellent repeatability, reproducibility and acceptable anti-interference of humidity. The DFT studies suggest that the physisorption of the hydrogen molecules on the surface of SnO2, but chemisorption on the surface of Pd/SnO2. The improved H2 sensing performance of Pd/SnO2 sensor attributes its ultrathin thickness of SnO2 and catalytic dissociation of Pd to O2 and H2.

Thickness optimization of SnO2 electron transporting layer in perovskite solar cells assembled under ambient atmosphere

Perovskite solar cells (PSCs) were assembled in ambient environment using different SnO2 electron transporting layers (ETLs) to explore the optimized SnO2 thickness. For this purpose, All PSCs had the low-cost architecture of FTO/b-TiO2 (block-TiO2)/SnO2/m-TiO2 (mesoporous-TiO2)/MAPbI3 (CH3NH3PbI3)/CIS (CuInS2)/carbon cathode. The influence of the SnO2 layer thickness was investigated onto the PSCs performances. The solar cell fabricated by L1-SnO2 layer had a thickness of about 582 nm and the SnO2 film thickness enlarged as the number of SnO2 layers was increased. The optimum ETL was achieved via deposition of one SnO2 layer (L1), which exhibited a uniform, hole‐free, and compact film surface. The champion PSC device fabricated with L1 SnO2 layer displayed the biggest average power conversion efficiency (PCE) of 12.60%, which was nearly 1.75 times larger than the average PCE= 7.19% for the champion SnO2-free device. As the SnO2 film thickness decreased, the PSC efficiency diminished so that the lowest PCE= 6.29% was measured for the device based on the L5-SnO2 ETL. The EIS spectra verified the lowest recombination of charge carriers and the most efficient charge extraction at L1 ETL and perovskite layer interface among all devices. As a result, the PSC with L1 SnO2 layer could be applied to fabricate economical and efficient PSC devices.

Understanding the impact of surface roughness: changing from FTO to ITO to PEN/ITO for flexible perovskite solar cells

So far, single-junction flexible PSCs have been lacking in efficiency compared to rigid PSCs. Recently, > 23% have been reported. We therefore focus on understanding the differences between rigid and flexible substrates. One often neglected parameter is the different surface roughness which directly affects the perovskite film formation. Therefore, we adjust the layer thickness of SnO2 and the perovskite layers. Furthermore, we introduce a PMMA layer between the perovskite and the hole transporting material (HTM), spiro-MeOTAD, to mitigate shunting pathways. In addition, the multication perovskite Rb0.02Cs0.05FA0.77MA0.16Pb(I0.83Br0.17)3 is employed, resulting in stabilized performances of 16% for a flexible ITO substrate and 19% on a rigid ITO substrate.

Understanding the Space-Charge Layer in SnO2 for Enhanced Electron Extraction in Hybrid Perovskite Solar Cells.

Tin oxide (SnO2) has been widely used as an n-type metal oxide electron transport layer in perovskite solar cells (PSCs) owing to its superior electrical and optical properties and low-temperature synthesis process. In particular, the interfacial effect between indium tin oxide (ITO) and SnO2 is an important parameter that controls the charge transport properties and device performance of the PSCs. Therefore, understanding the interfacial effect of ITO/SnO2 and its role in PSCs is crucial, but it is not studied intensively. Herein, we investigated the space-charge effect at the interface of ITO/SnO2 using transfer length measurement and conductive atomic force microscopy as a function of SnO2 thickness. Moreover, optical, morphologic, and device measurements were performed to determine the optimal SnO2 thickness for PSCs. The space-charge effect was identified in ITO/SnO2 when the SnO2 layer was very thin due to electron depletion near the interface. Interestingly, a critical kink point was observed at approximately 10 nm SnO2 thickness, indicating the electron depletion and weak charge transfer behavior of the device. Thus, a thickness around 20 nm was favorable for the best PSC performance because charge transport behavior in the thin SnO2 layer was depressed by electron depletion. However, when the thickness of SnO2 exceeded 50 nm, the device performance deteriorated due to increased series resistance. This study provides a strategy to tune the electron transport layer and boost the charge transport behavior in PSCs, making important contributions to optimizing SnO2-based PSCs.

Exploitation of SnO2/Polypyrrole Interface for Detection of Ammonia Vapors Using Conductometric and Optical Techniques: A Theoretical and Experimental Analysis.

This study describes the construction of a lab-built Surface Plasmon Resonance (SPR) system for gas sensing applications employing a highly sensitive and trustworthy optical approach. The nanocomposite thin film of tin oxide (SnO2) and Polypyrrole (PPy) were prepared for sensing highly toxic gas, i.e., ammonia (NH3) gas. The gas sensor was validated by both optical and conductometric techniques of gas sensing. The optical SPR gas sensor is based on the change in refractive index at the SnO2/Polypyrrole (PPy) interface with gas adsorption (NH3). The thickness of SnO2 and Polypyrrole thin films was optimised using theoretical calculations for a sharp SPR reflectance curve. The manuscript also offers theoretical SPR curves for different PPy and SnO2 layer thicknesses. To support the theoretical conclusions, the effects of NH3 gas on the prism/Au/SnO2/Polypyrrole system were also investigated experimentally. In comparison to other research described in the literature, it was observed that the constructed sensor’s sensitivity was higher. The obtained results demonstrate the utility of the SPR setup in the investigation of the interactions of adhered gas molecules with dielectrics and gas sensing. For conductometric gas sensing studies, the film having optimised thicknesses for sharp SPR reflectance curves was separately prepared on Interdigitated Electrodes. At a low working temperature of roughly 150 °C, the sensing response of the constructed film was observed and found to be maximal (60).

Comparison of electrical characteristics of Schottky junctions based on CdS nanowires and thin film

CdS nanowires and film Schottky diodes are fabricated and diode properties are compared. Effect of SnO2 on CdS film diode properties is investigated. CdS film/Au on 100 nm SnO2 substrate demonstrates like-resistor characteristics and increase in SnO2 thickness corrects resistor behavior, however the effective reverse saturation current density J o is significantly high and shunt resistance are considerably low, implying that SnO2 slightly prevents impurities migration from CdS films into ITO but cause additional issues. Thickness of CdS film on diode properties is further investigated and increasing CdS film thickness improved J o by one order of magnitude, however shunt resistance is obviously low, suggesting intrinsic issues in CdS film. 100 nm CdS nanowire/Au diodes reduce J o by three orders of magnitude in the dark and two orders of magnitude in the light respectively and their shunt resistance is significantly enhanced by 70 times when comparing with those of the CdS film diodes. The wide difference can be attributed to the fact that CdS nanowires overcome intrinsic issues in CdS film and thus demonstrate significantly well- defined diode behavior. Simulation found that CdS nanowire diodes have low compensating acceptor type traps and interface state density of 5.0 × 109 cm−2, indicating that interface recombination is not a dominated current transport mechanism in the nanowire diodes. CdS film diodes are simulated with acceptor traps and interface state density increased by two order of magnitude and shunt resistance reduced by one order of magnitude, indicating that high density of interface states and shunt paths occur in the CdS film diodes.

A Numerical Simulation of Transport Layer Thickness Effect in Tin-Based Perovskite Solar Cell

This paper investigates the performance of a planar n-i-p perovskite solar cells (PSC) with lead-free perovskite absorber for three different metal oxides serving as the electron transport layer (ETL). A tin (Sn) based PSCs - with i) zinc oxide (ZnO), ii) titanium oxide (TiO2) and iii) tin oxide (SnO2) as the ETL, and spiro-MeOTAD as the hole transport layer (HTL) - are modeled and simulated using a 1-dimensional numerical software (SCAPS 1-D). Thicknesses of both the methylammonium tin iodide (CH3NH3SnI3) absorber and the ETL are varied for the purpose of achieving the optimum power conversion efficiency (PCE). For all metal oxide candidates, thickness of lead-free perovskite absorber layer is varied from 400 nm to 1500 nm. The obtained results show that the optimum recorded PCE is achieved at 900 nm. Moreover, the highest PCE value of 8.10% is observed for 80 nm thickness of SnO2 compared to 8.05% for ZnO and 7.99% for TiO2. Additionally, the results unveil that for a constant HTL thickness of 80 nm and ETL thickness increment up to 300 nm, the PCE is slightly reduced between 0.12% and 0.99% for all ETLs. We believe that this is the first simulation effort that evaluates the effect of transport layer thickness on the performance of lead-free PSC, hoping that the findings will be useful for the research community, particularly for those working in the field of solar cells fabrication and development.

P-type c-Si/SnO2/Mg heterojunction solar cells with an induced inversion layer

Crystalline silicon/compounds heterojunction (SCH) solar cells using oxides or fluorides as the electron or hole transport layers present great low-cost potential. In this paper, c-Si/SnO2 SCH solar cells are based on p-type c-Si substrates and use SnO2, prepared by atomic layer deposition, as the electron transport layers are investigated. By optimizing the SnO2 thickness and the device annealing process, a Voc of 718 mV and an efficiency of 20.1% are achieved on a champion SCH solar cell with an optimized SnO2 thickness of 3 nm. By analyzing the dark J–V curves, transport mechanisms of the silicon/compound heterojunction are investigated. It is proved that a strong inversion layer is induced in the p-type Si substrate, and a high hole barrier exists in the heterojunction region, which makes it a minority-carrier device. The induced inversion layer at the Si surface and the carrier selective transport effect of the SnO2 layer together enable the devices to achieve a high Voc.

An Exploration of All‐Inorganic Perovskite/Gallium Arsenide Tandem Solar Cells

All‐inorganic perovskite/gallium arsenide (GaAs) tandem solar cells are of great interest for potential space applications. Herein, planar all‐inorganic four‐terminal (4‐T) and two‐terminal (2‐T) perovskite/GaAs tandem solar cells are simulated and optimized, respectively. To achieve higher absorption in the 4‐T configuration, the reflection and parasitic absorption have to be reduced through optimizing the thickness of the perovskite and GaAs base, reducing the thickness of SnO2 and the organic hole transport layer (HTL), and introducing an antireflection coating, respectively. To balance the short‐circuit current and open‐circuit voltage of the GaAs bottom cell, the doping concentration on GaAs is optimized to 1018 cm−3 that has resulted in a high power conversion efficiency (PCE) of 30.97%. Based on the results of 4‐T configuration, all‐inorganic perovskites with different halide compositions are used for current matching to achieve a high‐efficiency 2‐T configuration. After studying the effects of defect density and optimizing the doping concentration of the GaAs base, an extremely high PCE of 30.67% is achieved based on 2‐T CsPbIBr2/GaAs tandem solar cells. Furthermore, the current mismatching under the AM0 spectrum is eliminated for potential high altitude/space application, and the device offers a very competitive PCE of 27.23% compared with that of traditional GaAs double‐junction tandem solar cells.

Nonlinear Photoelectric Properties by Strained MoS2 and SnO2 Core‐Shell Nanotubes for Flexible Visible Light Photodetectors

AbstractA new type of coaxial hetero‐structured MoS2/SnO2 nanotube (MS‐NT) array is rationally designed for flexible visible light photodetector. Herein, a suitable solution for fabricating MS‐NT comprising SnO2 with controlled thickness and strain is proposed. The thickness of SnO2 deposited on MoS2 nanotubes are delicately manipulated by adjusting atomic layer deposition (ALD) cycles, which cause the internal tensile strain of the hybrid nanotubes. The photocurrent of the MS‐NT‐based photodetector exhibits high photoresponsivity values of 198.4 mA W‐1 and external quantum efficiency of 0.78%. In the analysis, a linear correlation between the excitation power and the photocurrent extracted from the MNT‐based devices is discerned. At the same time, a superlinearity of photocurrent in the MS‐NT arrays‐based device is found. Density functional theory calculations are adopted to unveil the strong correlation between the strain, bandgap, and photocurrent of the MS‐NT, which is a decisive factor for understanding the experimental evidences. The detailed mechanism for enhance photoresponsivity is further suggested for the strain‐tailored MS‐NT arrays‐based device. Such peculiar properties are expected to open a new chapter in the era of smart optical devices that require low driving voltage and high power efficiency.

Atomic Layer Deposition of SnO2-Coated Anodic One-Dimensional TiO2 Nanotube Layers for Low Concentration NO2 Sensing.

The continuous emission of nitrous oxides contributes to the overall air pollution and deterioration of air quality. In particular, an effective NO2 sensor capable of low concentration detection for continuous monitoring is demanded for safety, health, and wellbeing. The sensing performance of a metal oxide-based sensor is predominantly influenced by the availability of surface area for O2 adsorption and desorption, efficient charge transport, and size or thickness of the sensing layer. In this study, we utilized anodic one-dimensional (1D) TiO2 nanotube layers of 5 μm thick which offer large surface area and unidirectional electron transport pathway as a platform to accommodate thin SnO2 coatings as a sensing layer. Conformal and homogeneous SnO2 coatings across the entire inner and outer TiO2 nanotubes were achieved by atomic layer deposition with a controlled thickness of 4, 8, and 16 nm. The SnO2-coated TiO2 nanotube layers attained a higher sensing response than a reference Figaro SnO2 sensor. Specifically, the 8 nm SnO2-coated TiO2 nanotube layer has recorded up to ten-fold enhancement in response as compared to the blank nanotubes for the detection of 1 ppm NO2 at an operating temperature of 300 °C with 0.5 V applied bias. This is attributed to the SnO2/TiO2 heterojunction effect and controlled SnO2 thickness within the range of the Debye length. We demonstrated in this work, a tailored large surface area platform based on 1D nanotubes with thin active coatings as an efficient approach for sensing applications and beyond.

Effect of single Al2O3 cycle insertion with various positions in SnO2 thin films using atomic layer deposition

We used atomic layer deposition (ALD) to evaluate the effect of single Al2O3 cycle insertion at various locations on SnO2 and Al-doped SnO2 thin film transistors (TFTs). The ALD process was used to deposit the SnO2 thin film in 67 cycles (5 nm thickness). The position of the Al doped layer of Al-doped SnO2 was controlled by inserting a single Al2O3 cycle into the 56th, 34th and 12th cycles out of 67 cycles. The inserted Al doping layer was analyzed by secondary ion mass spectrometry (SIMS). Crystallinity and thickness of SnO2 and Al-doped SnO2 were measured using transmission electron microscope (TEM). Al-doped SnO2 thin films were prepared at different single Al2O3 cyclic positions for use as channel layers. XPS analysis showed that the oxygen vacancies within the film ranged from 32.8% to 41.6%. Also, the carrier concentration varied from 1.44 x 1016 to 2.80 x 1020 cm−3 depending on the Al doping position based on Hall measurements. In addition, the field effect mobility and on/off current ratios ranged from 1.4 to 8.1 cm2/Vsec and from 5.29 x 102 to 1.56 x 107, respectively. Lastly, the threshold voltage varied from −6.56 to 11.60 V. Overall, SnO2 and Al doped SnO2 channel layers deposited using atomic layer deposition were adjusted to exhibit switching characteristics by inserting a single Al2O3 cycle based on position.

Strategies to Fabricate Flexible SnO2 Based Perovskite Solar Cells Using Pre-Crystallized SnO2

Perovskite solar cells (PSCs) have attracted much attention since the first report. Flexible PSCs are one of the important development orientations due to its light weight. However, a low temperature process is essential to fabricate the flexible PSCs due to the deformation of the plastic substrate. Here, the pre-crystallization SnO2 colloids have been used to deposit the electron transport layer of flexible PSCs. The photovoltaic performance of flexible PSCs has been optimized through controlling the annealing temperature and SnO2 thickness. A moderate annealing temperature reduces the deformation of flexible substrates and protects the conductive layer. A SnO2 film with a suitable thickness not only blocks the direct contact between perovskite and electrode, but also transports the electron from perovskite to anode efficiently. As a result, the power conversion efficiency of the champion PSCs has been improved to 11.61 %.

Growth of ultrathin SnO2 on carbon nanotubes by atomic layer deposition and their application in lithium ion battery anodes

There is a great need for depositing SnO2 film onto micro/nano-structures in various fields. However, the growth of SnO2 on micro/nano-structures by atomic layer deposition (ALD) using tetrakis(dimethylamido)tin and water needs to be further investigated. In this work, ultrathin SnO2 were deposited uniformly and conformally on carbon nanotubes (CNTs) by ALD. The effects of deposition temperature on ALD-growth and the effect of film thickness on crystallographic state were investigated in detail. There is exceptionally high deposition rate at low deposition temperature. SnO2 tends to be deposited on the surface layer of CNTs substrate with CVD-like manner below 165 °C, but it can be deposited uniformly on each CNT mainly by chemical adsorption at high deposition temperature. In addition, the crystallographic state of SnO2 can also be controlled by regulating the film thickness. Using this feature, the electrochemical performances of SnO2@CNT composites with various thicknesses as the anode materials for lithium ion batteries (LIBs) were studied. The enhanced cycling stability and rate capability of SnO2@CNT could be attributed to small SnO2 thickness and limited crystal growth in ultrathin SnO2, which can overcome electrode degradation and enhance the lithium ion diffusion coefficient and electron kinetics of electrode.

High performance perovskite sub-module with sputtered SnO2 electron transport layer

Hybrid perovskite solar cells (PSC) have gained stupendous achievement in single/tandem solar cell, semitransparent solar cell and flexible devices. Aiming for potential commercialization of perovskite photovoltaic technology, up scalable processing is crucial for all function layers in PSC. Herein we present a study on room temperature magnetron sputtering of tin oxide electron transporting layer (ETL) and apply it in a large area PSC for low cost and continues manufacturing. The SnO2 sputtering targets with varied oxygen and deposition models are used. Specifically, the working gas ratio of Ar/O2 during the radio frequency sputtering process plays a crucial role to obtain optimized SnO2 film. The sputtered SnO2 films demonstrate similar morphological and crystalline properties, but significant varied defect states and carrier transportation roles in the PSC devices. With further modification of thickness of SnO2, the PSCs based on sputtered SnO2 ETL shows a champion efficiency of 18.20% in small area and an efficiency of 14.71% in sub-module with an aperture area of 16.07 cm2, which is the highest efficiency of perovskite sub module with sputtered ETLs.

Ppb level triethylamine detection of yolk-shell SnO2/Au/Fe2O3 nanoboxes at low-temperature

Yolk-shell nanostructures with high specific surface area and more active areas become the development direction of gas sensors. In this work, yolk-shell SnO2/Au/Fe2O3 nanoboxes with specific surface area of 38.3 m2 g−1 were successfully prepared. The size of Fe2O3 nanocubes was about 300 nm, the thickness of SnO2 was about 20 nm and the diameter of Au nanoparticles was about 12 nm. Benefiting from the distinctive structure and catalytic activity of precious metals, the as-prepared SnO2/Au/Fe2O3 yolk-shell nanostructures showed outstanding response to triethylamine (TEA) gas at 240 °C. The response value to 100 ppm TEA gas was 126.84, which was about 6 times and 14 times of the Au/Fe2O3 and Fe2O3 samples. In addition, yolk-shell SnO2/Au/Fe2O3 nanoboxes also exhibited a low detection limit (50 ppb), good response and recovery character (7/10 s). This experiment provided novel ideas for the design of new nanostructures for gas sensors.

Cavity enhancement simulation of the magneto-optical Kerr effect in optically anisotropic multilayer structure

In this work, a quadrilayer optical cavity of SnO2/Co/SnO2/Al/Si was established to investigate the Kerr rotations enhancement of the optically anisotropic Co film. Using the boundary matrix and the transmission matrix, the Kerr rotations of the multilayer cavity were provided. Simulation results showed that, at the incident wavelength of 300 nm, Kerr rotations in polar and longitudinal geometry could be obtained as 8.45° and 0.735°, respectively, which were much larger than that of the single optically anisotropic film. In addition, the Kerr rotation could be modulated by controlling the cavity length to fulfill the phase matching. After that, the optimized interlayer SnO2 thickness and incident angle were calculated as 40 nm and 30° in the cavity. Simulation results confirmed that this method could effectively enhance the Kerr rotations of the optically anisotropic Co film.