Thick Nb Research Articles

Effect of Nb interlayer thickness on interfacial products and mechanical properties of Ti–6Al–4V/EH690 steel clad plate by vacuum hot rolling

The high content of alloying elements in Ti alloys and high-strength steels, combined with the requirement for quenching and tempering heat treatment during the fabrication process of the clad plate, leads to complex interfacial products and poor bonding properties. An Nb interlayer was introduced to enhance the mechanical properties of Ti alloy/steel clad plates. This work investigated the effect of Nb interlayers with initial thicknesses of 10, 25, and 50 μm on the evolution of interfacial products and bonding properties. The results indicated that when the interlayer was thin (10 μm thick), the diffusion of Ti, Fe, and C in the matrix and clad materials could not be completely inhibited due to the uneven distribution of the Nb interlayer at the interface. TiC, NbC, Nb2C, and Fe2Nb were detected at the Nb/steel interface. With the thickness of the interlayer increased (reaching 25 μm or 50 μm), the influence of uneven deformation on the interlayer was weakened, and the Nb/steel interface was composed of Nb2C and Fe2Nb. The tensile shear test indicated that the fracture occurred at the Nb/steel interface and the Nb interlayer. The plasticity of the micrometer Nb interlayer decreased with the increase in interlayer thickness. Therefore, more cracks and brittle fracture characteristics were observed in the fracture surface of the 50 μm thick Nb interlayer sample. The clad interface with a 25 μm thick Nb interlayer exhibited the highest interfacial shear strength of 295 MPa due to the few intermetallic compounds (IMCs) at the Nb/Steel interface and the excellent plasticity of the Nb interlayer.

Superconducting Nb interconnects for Cryo-CMOS and superconducting digital logic applications

A 100 nm wide superconducting niobium (Nb) interconnect was fabricated by a 300 mm wafer process for Cryo-CMOS and superconducting digital logic applications. A low pressure and long throw sputtering was adopted for the Nb deposition, resulting in good superconductivity of the 50 nm thick Nb film with a critical temperature (T c) of 8.3 K. The interconnects had a titanium nitride (TiN)/Nb stack structure, and a double-layer hard mask was used for the dry etching process. The exposed area of Nb film was minimized to decrease the effects of plasma damage during fabrication and atmosphere. The developed 100 nm wide and 50 nm thick Nb interconnect showed good superconductivity with a T c of 7.8 K and a critical current of 3.2 mA at 4.2 K. These results are promising for Cryo-CMOS and superconducting digital logic applications in the 4 K stage.

Reduction of Operating Current by Harnessing the Field‐ and Damping‐Like Torque Ratios in Nonmagnet–Ferromagnet Heterojunctions

With the growing demand for high‐speed electronic devices with low energy consumption, spin–orbit torque (SOT) has become a significant focus. SOT can switch the magnetization direction in a material system with broken inversion symmetry, such as a normal metal (NM)/ferromagnet (FM) heterojunction. The SOT consists of two mutually orthogonal vector components along with the injected current direction: the transverse damping‐like torque (DLT) and the longitudinal field‐like torque (FLT). Numerous studies have mainly centered on the DLT for the SOT switching mechanism. However, DLT and FLT are essential to enhance SOT efficiency because FLT boosts the magnetization precession motion. Herein, heterojunctions consisting of NM 1 (Ta, W, or Pt)/NM 2 (Nb)/FM (CoFeB) are devised to manipulate the FLT‐to‐DLT ratio (η) through the change in Nb thickness. Furthermore, experimental confirmation exists for reducing threshold current as η increases. The SOT devices with substantial η generate random numbers. The National Institute of Standards and Technology Special Publication 800‐90B test verifies randomness and confirms that the SOT devices are beneficial sources for true random number generators (TRNGs). These findings indicate the crucial role of FLT in the SOT switching process and underscore its significance in developing SOT‐based TRNG devices.

Methodology to Characterize Thermal Properties of Thin Film Superconductors Using a DynaCool Physical Property Measurement System

We describe a methodology to characterize heat capacity <bold xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C<inline-formula><tex-math notation="LaTeX">$_{p}$</tex-math></inline-formula></b> of 1 μm thick Nb thin films at a temperature range of 60 K to 1.8 K. We used a commercially available relaxation calorimeter device by Quantum Design DynaCool Physical Property Measurement System (PPMS). The mass of thin films is negligible compared to the minimum coarse estimate required by the heat capacity module of the PPMS. To overcome this limitation, a vertical stack of multiple diced substrates of the same material with uniform dimensions of 2.5 mm x 2.5 mm was joined by cryogenically compatible grease to form a stack resulting in a larger effective mass of the target film. The critical behavior of heat capacity in the region of the transition temperature is demonstrated. The heat capacity of Nb thin films was measured by subtracting the total heat capacity of the joining grease and stack of substrate used as addenda. Results in this work prove that a vertical stacking approach is viable for measuring the behavior of deposited thin films.

Supercurrent diode effect in thin film Nb tracks

We demonstrate nonreciprocal critical current in 65 nm thick polycrystalline and epitaxial Nb thin films patterned into tracks. The nonreciprocal behavior gives a supercurrent diode effect, where the current passed in one direction is a supercurrent and the other direction is a normal state (resistive) current. We attribute fabrication artifacts to creating the supercurrent diode effect in our tracks. We study the variation of the diode effect with temperature and the magnetic field and find a dependence with the width of the Nb tracks from 2 to 10 μm. For both polycrystalline and epitaxial samples, we find that tracks of width 4 μm provide the largest supercurrent diode efficiency of up to ≈30%, with the effect reducing or disappearing in the widest tracks of 10 μm. We propose a model based on the limiting contributions to the critical current density to explain the track width dependence of the induced supercurrent diode effect. It is anticipated that the supercurrent diode will become a ubiquitous component of the superconducting computer.

Scanning tunneling microscopy and spectroscopy characterization of Nb films for quantum applications

Niobium thin films are key components of superconducting microwave resonators. Interest in these devices has increased dramatically because of their application in quantum systems. Despite tremendous effort to improve their performance, loss mechanisms are still not well understood. Nb/substrate and Nb/air interfaces are likely culprits in contributing to decoherence and ultimately limiting the performance of superconducting devices. Here, we investigate the Nb/substrate interface by studying the effect of hydrogen-passivated H:Si(111) substrates on the local superconducting properties of ∼40 nm thick Nb films compared to Nb films grown on typical Si(001) substrates. Specifically, low-temperature scanning tunneling microscopy and spectroscopy are employed to compare nanoscale material properties. The atomically flat monohydride H:Si(111) substrates are found to yield a smoother and less defective interface with the Nb film. Correspondingly, the Nb films grown on H:Si(111) substrates present more uniform superconducting properties and exhibit less quasiparticle broadening.

Development of a prototype superconducting radio-frequency cavity for conduction-cooled accelerators

The higher efficiency of superconducting radio-frequency (SRF) cavities compared to normal-conducting ones enables the development of high-energy continuous-wave linear accelerators (linacs). Recent progress in the development of high-quality Nb$_3$Sn film coatings along with the availability of cryocoolers with high cooling capacity at 4 K makes it feasible to operate SRF cavities cooled by thermal conduction at relevant accelerating gradients for use in accelerators. A possible use of conduction-cooled SRF linacs is for environmental applications, requiring electron beams with energy of $1 - 10$ MeV and 1 MW of power. We have designed a 915 MHz SRF linac for such an application and developed a prototype single-cell cavity to prove the proposed design by operating it with cryocoolers at the accelerating gradient required for 1 MeV energy gain. The cavity has a $\sim 3$ $\mu$m thick Nb$_3$Sn film on the inner surface, deposited on a $\sim4$ mm thick bulk Nb substrate and a bulk $\sim7$ mm thick Cu outer shell with three Cu attachment tabs. The cavity was tested up to a peak surface magnetic field of 53 mT in liquid He at 4.3 K. A horizontal test cryostat was designed and built to test the cavity cooled with three Gifford-McMahon cryocoolers. The rf tests of the conduction-cooled cavity, performed at General Atomics, achieved a peak surface magnetic field of 50 mT and stable operation was possible with up to 18.5 W of rf heat load. The peak frequency shift due to microphonics was 23 Hz. These results represent the highest peak surface magnetic field achieved in a conduction-cooled SRF cavity to date and meet the requirements for a 1 MeV energy gain.

A Multi-chroic Kinetic Inductance Detectors Array Using Hierarchical Phased Array Antenna

We present a multi-chroic kinetic inductance detector (KID) pixel design integrated with a broadband hierarchical phased-array antenna. Each low-frequency pixel consists of four high-frequency pixels. Four passbands are designed from 125 to 365 GHz according to the atmospheric windows. The lumped element KIDs consist of 100-nm thick AlMn inductors and Nb parallel plate capacitors with hydrogenated amorphous Si dielectric. Two different coupling structures are designed to couple millimeter-wave from microstrip lines to KIDs. The KID designs are optimized for a 10-m-class telescope at a high, dry site, for example, the Leighton Chajnantor Telescope. Preliminary measurement results using Al KIDs are discussed.

Anomalous Critical Field Dependence of Cr-Nb-Cr Trilayers on Niobium Thickness

Cr-Nb-Cr trilayer thin films were deposited using DC/RF sputtering with Cr layer thickness maintained at 7.5 nm and Nb thickness varying from 30 nm to 229 nm, in order to study the interplay of antiferromagnetism and superconductivity. Various viewpoints have been expressed in the literature with respect to analyzing the anomalous properties that have been identified in superconductor/magnetic thin films. The study of Cr-Nb-Cr thin films were taken up to identify the existence of similar anomalous superconducting properties on account of antiferromagnetic-superconductor interfaces. X-ray reflectivity measurements showed high quality of thin film structure with minimum surface and interface roughness. Transport measurements down to 2K were carried out in the presence of magnetic fields up to 2 T applied perpendicular to the trilayers to deduce Tc. The suppression of Tc due to Cr layer is larger than proximity effect of similar metal films. It could be explained by proximity effect using antiferromagnetic Cr layer. Upper critical field measurements show a distinct nonmonotonic dependence of upper critical magnetic field and the slope on Nb layer thickness. The analysis due to WHH theory to deduce upper critical fields for the trilayer thin films studied did not match with experimental values. Although studies performed on Cr-Nb-Cr trilayers did not show any anomaly in Tc, it clearly showed a depression of Tc much largerthan proximity effect, non monotonic behavior in Bc2(0) and dBc2/dTc behavior with Nb layer thickness.

Towards Replacing Titanium with Copper in the Bipolar Plates for Proton Exchange Membrane Water Electrolysis.

For proton exchange membrane water electrolysis (PEMWE) to become competitive, the cost of stack components, such as bipolar plates (BPP), needs to be reduced. This can be achieved by using coated low-cost materials, such as copper as alternative to titanium. Herein we report on highly corrosion-resistant copper BPP coated with niobium. All investigated samples showed excellent corrosion resistance properties, with corrosion currents lower than 0.1 µA cm−2 in a simulated PEM electrolyzer environment at two different pH values. The physico-chemical properties of the Nb coatings are thoroughly characterized by scanning electron microscopy (SEM), electrochemical impedance spectroscopy (EIS), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). A 30 µm thick Nb coating fully protects the Cu against corrosion due to the formation of a passive oxide layer on its surface, predominantly composed of Nb2O5. The thickness of the passive oxide layer determined by both EIS and XPS is in the range of 10 nm. The results reported here demonstrate the effectiveness of Nb for protecting Cu against corrosion, opening the possibility to use it for the manufacturing of BPP for PEMWE. The latter was confirmed by its successful implementation in a single cell PEMWE based on hydraulic compression technology.

Spin\u2013orbit torques in normal metal/Nb/ferromagnet heterostructures

Quantifying the spin–orbit torque (SOT) efficiency with changing the layer thickness is crucial for understanding the physical background of SOT. This study investigates the Nb-thickness-dependent SOT efficiency of two types of layered heterostructures: Ta/Nb/CoFeB and Pt/Nb/CoFeB. We find that the Nb thickness dependence of the SOT efficiency in the two samples is quite different. In the Pt/Nb series, the SOT sign changes according to the thickness variation because Pt and Nb have different spin–orbit coupling signs. We observe the resulting reversal in switching polarity through current-induced SOT switching experiments. However, due to the same spin–orbit coupling signs of Ta and Nb, no such polarity reversal was observed in Ta/Nb series. Further, we extract the spin diffusion length of Nb in each heterostructure. These results provide a systematic understanding of the material- and thickness-dependent SOT characteristics.

Characterization of superconducting NbTiN films using a dispersive Fourier transform spectrometer

We have built a terahertz dispersive Fourier transform spectrometer [Birch, Microchim. Acta 93, 105–122 (1987)] to study frequency properties of superconducting films used for fabrication of THz detectors. The signal reflected from the tested film is measured in time domain, which allows to separate it from the other reflections. The complex conductivity of the film depends on frequency and determines the reflection coefficient. By comparing the film reflection in the superconducting state (temperature is below Tc) with the reflection of the normal state, we characterize the film quality at terahertz frequencies. The method was applied to 70 and 200 nm thick Nb films on a silicon wafer and to 360 nm thick NbTiN films on silicon and quartz wafers. The strong-coupling coefficient, α, was found to be 3.52 for Nb and 3.71–4.02 for the NbTiN films. The experimental results were fitted using extended Mattis-Bardeen theory [Noguchi et al., Phys. Procedia 36, 318–323 (2012)] and show good agreement.

Defect depth profiling of sputter-deposited Cu/Nb bilayers using a positron accelerator

Ultrathin bilayers of Cu/Nb viz. Nb/Cu/Si and Cu/Nb/Si have been deposited on Si substrate using DC and RF magnetron sputtering. The structural characterization of bilayers has been carried out using X-ray reflectivity (XRR) to determine the thickness and density of individual layers. The thickness of Nb and Cu layer in the bilayers ranges from ∼ 44–71 nm and 6–11 nm, respectively. Defect depth profiling of bilayers has been carried out using a positron accelerator. The measured depth profiles, i.e., S-parameter profiles have been fitted using VEPFIT, a program that factors the positron implantation profile and its annihilation to estimate S-parameter and positron diffusion length in individual layers. We present a detailed and systematic analysis of the measured S-profiles using VEPFIT to evaluate S-parameter and positron diffusion length in individual layers of the bilayer structures. These parameters are representative of defect characteristics of the layers. In this work we also highlight the nuances of VEPFIT analysis useful to extract defect characteristics in bilayers. The results indicate that defect microstructure of the layer depends on the thickness, deposition method and irradiation. Defect density is seen to increase with the reduction of thickness of the layer. RF sputtered layer has more defects as compared to DC sputtered layers. Positron depth profiling does not reveal distinct interface between the two metallic layers as well as layer and the substrate. A systematic characterization of defect in ultrathin structures is crucial to establish a correlation between defect microstructure and properties of nanolayer composites for advanced applications.

Deuterium plasma-driven permeation through vanadium, niobium and tantalum membranes

Deuterium (D) plasma-driven permeation (PDP) experiments for vanadium (V), niobium (Nb) and tantalum (Ta) membranes are performed between 573–873 K in the linear plasma facility PREFACE. The sample temperature, membrane thickness and ion incident energy effects on D permeation behavior through these three metals are studied. PDP fluxes of D through Ta and Nb decrease with decreasing sample temperature, except for the 0.05 mm thick Nb case. Moreover, a break point around 750 K can be observed on the flux-temperature curves for all V samples. The D PDP flux through Nb decreases as the thickness increases. For Ta and V samples, however, the permeation fluxes do not change significantly when their thicknesses are thinner than 0.1 mm. A drop in D permeation fluxes for the three materials is observed when increasing the ion incident energy. The surface morphology is checked by Scanning Electron Microscopy (SEM). Only the V membranes exposed to D plasma show surface exfoliation.

Nb Texture Evolution and Interdiffusion in Nb/Si-Layered Systems.

In this paper, we present a detailed study on the microstructure evolution and interdiffusion in Nb/Si-layered systems. Interlayer formation during the early stages of growth in sputter-deposited Nb-on-Si and Si-on-Nb bilayer systems is studied in vacuo using a high-sensitivity low-energy ion-scattering technique. An asymmetric intermixing behavior is observed, where the Si-on-Nb interface is ∼2× thinner than the Nb-on-Si interface, and it is explained by the surface-energy difference between Nb and Si. During Nb-on-Si growth, the crystallization of the Nb layer occurs around 2.1 nm as-deposited Nb thickness with a strong Nb(110)-preferred orientation, which is maintained up to 3.3 nm as-deposited Nb thickness. A further increase in the Nb layer thickness above 3.3 nm results in a polycrystalline microstructure with a reduced degree of texture. High-resolution cross-sectional transmission electron microscopy imaging is performed on Nb/Si multilayers to study the effect of the Nb layer texture on interdiffusion during low-temperature annealing. Nb/Si multilayers with amorphous 2 nm Nb layers and strongly textured 3 nm thick Nb layers, with limited grain-boundary pathways for diffusion, show no observable interdiffusion during annealing at 200 °C for 8 h, whereas in a Nb/Si multilayer with polycrystalline 4 nm thick Nb layers, a ∼1 nm amorphous Nb/Si interlayer is formed at the Si-on-Nb interface during annealing.

Investigation of the upper critical field in artificially engineered Nb/V/Ta superlattices

Artificially engineered superlattice offers highly flexible control of the quantized electronic state by manipulating its lattice structure. We fabricated artificially engineered superlattices [Nb/V/Ta] n as a new class of superconducting superlattices and investigated the upper critical field H c2 in terms of the structural difference. It is found that the out-of-plane upper critical field significantly increases compared with that of a Nb single layer film as the thickness of the constituent Nb, V, and Ta layers becomes thin. In the case of the superlattice [Nb/V/Ta] n , the is basically governed by the orbital pair-breaking effect rather than Pauli pair-breaking effect and increases only when the crystalline size of the superlattice decreases by the insertion of V layers. Thus, we conclude that the shortening of the coherence length of Cooper pairs due to the crystalline disorder predominantly contributes to the increase of the in the superlattice [Nb/V/Ta] n .

Atomic Layer Deposited Materials as Barrier Layers for Preservation of Nb Superconductivity in Multilayered Thin-Film Structures

We have investigated Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as a thin interface material between Nb and polyimide, deposited using a relatively low temperature thermal atomic layer deposition (ALD) process to preserve the superconducting properties of the Nb layer. 250 nm thick Nb traces, with ~20 nm thick layers of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> were used for this work. HD-4110 spin-on polyimide by HD MicroSystems with a thickness of ~20 μm was used with different curing temperatures of 225 °C and 375 °C. DC electrical characterization of patterned Nb lines were carried out using a pulse-tube based cryostat to determine T', and I', for the samples at different steps in the fabrication process. Details of the fabrication processes, experimental procedures and performance results are included. Results of these experiments provide insight into materials stack-ups and fabrication process options for robust, multi-layer superconducting flexible cables that can be used for signal transmission in future densely-integrated cryogenic electronics systems.

Proximity effect in [Nb(1.5 nm)/Fe(x)]10/Nb(50 nm) superconductor/ferromagnet heterostructures.

We have investigated the structural, magnetic and superconduction properties of [Nb(1.5 nm)/Fe(x)]10 superlattices deposited on a thick Nb(50 nm) layer. Our investigation showed that the Nb(50 nm) layer grows epitaxially at 800 °C on the Al2O3(1−102) substrate. Samples grown at this condition possess a high residual resistivity ratio of 15–20. By using neutron reflectometry we show that Fe/Nb superlattices with x < 4 nm form a depth-modulated FeNb alloy with concentration of iron varying between 60% and 90%. This alloy has weak ferromagnetic properties. The proximity of this weak ferromagnetic layer to a thick superconductor leads to an intermediate phase that is characterized by a suppressed but still finite resistance of structure in a temperature interval of about 1 K below the superconducting transition of thick Nb. By increasing the thickness of the Fe layer to x = 4 nm the intermediate phase disappears. We attribute the intermediate state to proximity induced non-homogeneous superconductivity in the structure.

Multi-metallic conduction cooled superconducting radio-frequency cavity with high thermal stability

Superconducting radio-frequency cavities are commonly used in modern particle accelerators for applied and fundamental research. Such cavities are typically made of high-purity, bulk Nb and with cooling by a liquid helium bath at a temperature of ∼2 K. The size, cost and complexity of operating a particle accelerator with a liquid helium refrigerator make the current cavity technology not favorable for use in industrial-type accelerators. We have developed a multi-metallic 1.495 GHz elliptical cavity conductively cooled by a cryocooler. The cavity has a ∼2 µm thick layer of Nb3Sn on the inner surface, exposed to the rf field, deposited on a ∼3 mm thick bulk Nb shell and a bulk Cu shell, of thickness mm deposited on the outer surface by electroplating. A bolt-on Cu plate 1.27 cm thick was used to thermally connect the cavity equator to the second stage of a Gifford-McMahon cryocooler with a nominal capacity of 2 W at 4.2 K. The cavity was tested initially in liquid helium at 4.3 K and reached a peak surface magnetic field of ∼36 mT with a quality factor of 2 × 109. The cavity cooled by the cryocooler achieved a peak surface magnetic field of ∼29 mT, equivalent to an accelerating gradient of 6.5 MV m–1. The conduction-cooled cavity could be operated in continuous-wave with as high as 5 W dissipation in the cavity for 1 h without any thermal breakdown, because of the Cu outer layer with high thermal conductivity. This result represents a paradigm shift in the technology of superconducting accelerator cavities.

Measurement of magnetic penetration depth in superconducting films by two-coil mutual inductance technique

The magnetic penetration depth (&lt;i&gt;λ&lt;/i&gt;) of a superconductor is an important parameter which connects the macroscopic electrodynamics with the microscopic mechanism of superconductivity. High-accuracy measurement of &lt;i&gt;λ&lt;/i&gt; is of great significance for revealing the pairing mechanism of superconductivity and exploring the applications of superconductors. Among various methods used to measure &lt;i&gt;λ&lt;/i&gt; of superconducting films, the two-coil mutual inductance (MI) technique has been widely adopted due to its high precision and simplicity. In this paper, we start with introducing the principle of MI technique and pointing out that its accuracy is mainly limited by the uncertainties in the geometric parameters (e.g. the distance between two coils) and the leakage flux around the film edge. On this basis, we build a homemade &lt;i&gt;transmission&lt;/i&gt;-type MI device with a delicate design to achieve high-accuracy. Two coils are fixed by a single-crystal sapphire block machined with high precisions to minimize the uncertainty in geometry. As a result, the reproducibility in induced voltage measured with sample remounted is better than 4%. Besides, the flux leakage around the film edge is accurately determined by measuring a thick Nb film and Nb foils. The voltage induced by leakage flux is only around 1% of that measured in the normal state. Therefore, the absolute value of &lt;i&gt;λ&lt;/i&gt; can be accurately extracted after flux leakage subtraction and normalization. It is shown that the error of the measured &lt;i&gt;λ&lt;/i&gt; is less than 10% for a typical superconducting film with a thickness of 100 nm and a penetration depth of 150 nm. Furthermore, the performance of our apparatus is tested on epitaxial NbN films with thickness of 6.5 nm. The results show that the low temperature variation of superfluid density is well described by the dirty s-wave BCS theory, and at temperatures close to &lt;i&gt;T&lt;sub&gt;c&lt;/sub&gt;&lt;/i&gt;, the superfluid density decrease drastically, owing to the Berezinski-Kosterlitz-Thouless transition transition. Moreover, the zero-temperature magnetic penetration depth and the superconducting energy gap extracted from the fitting parameters are both consistent with the reported values. Our device provides an ideal platform for carrying out detailed studies of the dependence of &lt;i&gt;λ&lt;/i&gt; on temperature, chemical composition and epitaxial strain, etc. It could also be utilized to characterize other parameters of superconductor such as the critical current density, and when combined with the ionic liquid gating technique, our device offers an efficient route for revealing the microscopic mechanism of superconductivity.