N-type Thermoelectric Properties Research Articles

Enhanced n-Type Thermoelectric Properties and Structure Evolution of Carbonized Metal-Coordination Polydopamine.

Carbonized polydopamine (cPDA) exhibits a nitrogenous graphite-like structure with n-type semiconductor property. However, the low electrical conductivity and Seebeck coefficient of cPDA cannot meet the needs of flexible thermoelectric devices. In this study, a series of metal ions were coordinated with cPDA to enhance n-type thermoelectric properties. At 300 K, all metal-coordination cPDA (metal-cPDA) samples obtain lower thermal conductivity compared to cPDA. Mn-cPDA exhibits the greatest Seebeck coefficient of -25.94 μV K-1, which is almost six times higher than cPDA. Fe-cPDA shows the best electrical conductivity of 2.45 × 105 S m-1. An optimal power factor (PF) value of 11.93 μW m-1 K-2 is achieved in Ca-cPDA with the enhanced electrical conductivity of 9.5 × 104 S m-1 and Seebeck coefficient of -11.24 μV K-1. Using Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), we revealed the structural characterization of metal-cPDA. Our results indictate that the different metal ions (Mn2+, Zn2+, Mg2+, Al3+, Ca2+, and Fe3+) exert varying influences on the growth of graphite-like structure within metal-cPDA, which lead to the evolution of electrical conductivity. We observe that the carrier density and carrier mobility depend on both the degree of graphitization and the metal-ion coordination, which work together on electrical conductivity and Seebeck coefficient. These findings and understanding of the thermoelectric properties of PDA-based materials will help to realize high-performance n-type thermoelectric materials for flexible electronic device applications.

Anion/Cation Co-Doping to Improve the Thermoelectric Performance of Sn-Enriched n-Type SnSe Polycrystals with Suppressed Lattice Thermal Conductivity.

Enhancing the thermoelectric performance of n-type polycrystalline SnSe is essential, addressing challenges posed by elevated thermal conductivity and compromised power factor inherent in its intrinsic p-type characteristics. This investigation utilized solid-state reactions and spark plasma sintering techniques for the synthesis of n-type SnSe. A significant improvement in the figure of merit (ZT) is achieved through strategic reduction in Se concentration and optimization of crystal orientation. The co-doping with Br and Ge further improves the material; Br amplifies carrier concentration, enhancing electrical conductivity, while Ge introduces effective phonon scattering centers. In the Br/Ge co-doped SnSe sample, thermal conductivity dropped to 0.38Wm⁻¹K⁻¹, yielding a remarkable power factor of 662µWmK- 2 at 773K, culminating in a ZT of 1.34. This signifies a noteworthy 605% improvement over the pristine sample, underscoring the pivotal role of Ge doping in enhancing n-type material thermoelectric properties. The enhancement is attributed to Br doping introducing additional electronic states near the valence band, and Ge doping modifying the band structure, fostering resonant states near the conduction band. The Br/Ge co-doping further transforms the band structure, influencing electrical conductivity, Seebeck coefficient, and thermal conductivity, advancing the understanding and application of n-type SnSe materials for superior thermoelectric performance.

Synergistic Interactions in Sequential Process Doping of Polymer/Single-Walled Carbon Nanotube Nanocomposites for Enhanced n-Type Thermoelectric Performance.

This study focuses on the fabrication of nanocomposite thermoelectric devices by blending either a naphthalene-diimide (NDI)-based conjugated polymer (NDI-T1 or NDI-T2), or an isoindigo (IID)-based conjugated polymer (IID-T2), with single-walled carbon nanotubes (SWCNTs). This is followed by sequential process doping method with the small molecule 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI) to provide the nanocomposite with n-type thermoelectric properties. Experiments in which the concentrations of the N-DMBI dopant are varied demonstrate the successful conversion of all three polymer/SWCNT nanocomposites from p-type to n-type behavior. Comprehensive spectroscopic, microstructural, and morphological analyses of the pristine polymers and the various N-DMBI-doped polymer/SWCNT nanocomposites are performed in order to gain insights into the effects of various interactions between the polymers and SWCNTs on the doping outcomes. Among the obtained nanocomposites, the NDI-T1/SWCNT exhibits the highest n-type Seebeck coefficient and power factor of -57.7 µV K-1 and 240.6 µW m-1 K-2 , respectively. However, because the undoped NDI-T2/SWCNT exhibits a slightly higher p-type performance, an integral p-n thermoelectric generator is fabricated using the doped and undoped NDI-T2/SWCNT nanocomposite. This device is shown to provide an output power of 27.2 nW at a temperature difference of 20 K.

Opening the Bandgap of Metallic Half-Heuslers via the Introduction of d-d Orbital Interactions.

Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d-d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance. The width of the bandgap can be engineered by tuning the strength of the d-d orbital interactions. The conduction type and the carrier density can also be modulated in the Mg1- x Tix NiSb system. Both improved n-type and p-type thermoelectric properties are realized, which are much higher than that of the metallic MgNiSb. The proposed bandgap opening strategy can be employed to design and develop new half-Heusler semiconductors for functional and energy applications.

NaBeAs and NaBeSb: Novel Ternary Pnictides with Enhanced Thermoelectric Performance

Thermoelectrics is a clean energy technology that converts thermal energy into electrical energy and provides an environmentally friendly and viable route to produce electricity. In this work, we thoroughly explore the thermoelectric performance of two novel ternary pnictide compounds, NaBeAs and NaBeSb, using full ab initio calculations and solving linear Boltzmann transport equations. We predict that both compounds exhibit excellent dynamical and thermal stability. The combined effect of low phonon group velocity and weak bonding interaction results in intrinsic low lattice thermal conductivities of 1.41 and 0.59 W/mK for NaBeAs and NaBeSb, respectively, in the z-axis direction at 600 K. The electronic structure exhibits high conduction band degeneracy, which results in favorable electrical transport characteristics. The unique combination of very low lattice thermal conductivity and good electrical transport properties leads to excellent n-type thermoelectric properties. Furthermore, in n-type doping, the figures of merit reach 1.82 and 4.26 for NaBeAs and NaBeSb at 600 K. Our findings show that both compounds are promising n-type thermoelectric materials at medium temperatures.

Synthesis of N-type Bi2Te2.7Se0.3 Compounds through Oxide-Reduction Process and Related Thermoelectric Transport Properties

We present a study on the synthesis of Bi2Te2.7Se0.3 powders through an oxide reduction process and also on the effect of the oxide reduction process on the thermoelectric transport properties of the resulting Bi2Te2.7Se0.3 compounds. Starting materials of Bi2O3, TeO2 and SeO2 were mechanical milled for homogeneous mixing, and then oxidized to prepare complex oxide powders. The complex oxide powders were reduced at different reduction temperatures under hydrogen atmosphere, and a single phase of Bi2Te2.7Se0.3 could be achieved in the reduced powder, with shorter reduction times as the reduction temperature was increased. The shape of the synthesized powder particles changed from granules to flakes with increasing reduction temperature and longer reduction time. Bi2Te2.7Se0.3 powders with different shapes were consolidated by spark plasma sintering (SPS). The SPSed Bi2Te2.7Se0.3 compounds exhibited anisotropic n-type thermoelectric transport properties along the vertical and parallel planes with respect to the pressing direction of the SPS. The degree of anisotropy in the thermoelectric properties was quite consistent with the degree of anisotropy in the microstructure, which originated from the anisotropic shapes in the Bi2Te2.7Se0.3 powders depending on the reduction conditions. Detailed thermoelectric transport properties of the n-type Bi2Te2.7Se0.3 compounds were interpreted in terms of anti-site defect formation and their structural anisotropy.

Entropy engineering: A simple route to both p- and n-type thermoelectrics from the same parent material

Ternary half-Heusler (HH) semiconductors have been identified as excellent high-temperature thermoelectric (TE) materials, but the high thermal conductivity restricts the development and application. In this work, we report the design of the HH alloy Ti(Fe/Co/Ni)Sb with both p-type and n-type conductions from the same parent compound TiCoSb by entropy engineering. High-throughput (HTP) experiments have been first conducted to verify the formation of Ti(Fe1/3+xCo1/3Ni1/3-x)Sb solid solution and screen the range of compositions with the best p-type and n-type thermoelectric properties by regulating the Fe/Ni ratio. The random mixing of Fe/Co/Ni on the 4c site of the HH lattice induces a large lattice distortion, leading to a significantly reduced lattice thermal conductivity. Adjusting the sample composition (Fe/Ni ratio) changes the carrier concentration, carrier type and electronic band structure simultaneously, contributing to improved TE power factors for both p- and n-type materials. As a result, a peak TE figure of merit zT of up to ∼0.56 for p-type and ∼0.49 for n-type are achieved. Our experimental results demonstrate that entropy engineering is a promising strategy to extend the composition range and tune the TE properties for HH materials, which might be a generally applicable route to improve the thermoelectric performance of other TE materials.

Large improvement in thermoelectric performance of pressure-tuned Mg3Sb2.

The Mg3Sb2-based Zintl compound is a promising candidate for a high-performance thermoelectric material with the advantage of the component elements being low cost, non-toxic and earth-abundant. Here, we investigate the influence of pressure on the electronic structure and p-type and n-type thermoelectric transport properties of Mg3Sb2 by using density functional theory and Boltzmann transport theory. The energy gaps first increase and then decrease with the increasing of pressure, and a peak value of the valley degeneracy of conduction band occurs at 4 GPa. Based on the calculated band structures, the zT (figure of merit) values of p-type Mg3Sb2 under pressure are significantly enhanced, which predominantly originates from the boosted PF (power factor) contributed by the increased carrier's relaxation time. When the carrier concentration reaches 1 × 1020 cm−3, the PF of p-type Mg3Sb2 at 4 GPa is increased by 35% relative to that of the compound at 0 GPa, thus leading to a considerably improved zT of ∼0.62 at 725 K. Under the same conditions, due to the increased density of states effective mass, the n-type Mg3Sb2 exhibits a highest PF of ∼19 μW cm−1 K−2 and a peak zT of 1.7. Therefore, pressure tuning is an effective method to improve the p-type and n-type thermoelectric transport performance of Mg3Sb2-based Zintl compounds. This work on Mg3Sb2 under pressure may provide a new mechanism for the experimenters towards the enhancement of the thermoelectric performance of materials.

A thermoelectric generator comprising selenium-doped bismuth telluride on flexible carbon cloth with n-type thermoelectric properties

Carbon cloth was used as a flexible substrate for bismuth telluride (Bi2Te3) particles to provide flexibility and improve the overall thermoelectric performance. Bi2Te3 on carbon cloth (Bi2Te3/CC) was synthesized via a hydrothermal reaction with various reaction times. After over 12 h, the Bi2Te3 particles showed a clear hexagonal shape and were evenly adhered to the carbon cloth. Selenium (Se) atoms were doped into the Bi2Te3 structure to improve its thermoelectric performance. The electrical conductivity increased with increasing Se-dopant content until 40% Se was added. Moreover, the maximum power factor was 1300 μW/mK2 at 473 K for the 30% Se-doped sample. The carbon cloth substrate maintained its electrical resistivity and flexibility after 2000 bending cycles. A flexible thermoelectric generator (TEG) fabricated using the five pairs of 30% Se-doped sample showed an open-circuit voltage of 17.4 mV and maximum power output of 850 nW at temperature difference ΔT = 30 K. This work offers a promising approach for providing flexibility and improving the thermoelectric performance of inorganic thermoelectric materials for wearable device applications using flexible carbon cloth substrate for low temperature range application.

First-Principle Study on p-n Control of PEDOT-Based Thermoelectric Materials by PTSA Doping.

PEDOT:Tos, a PSS-free PEDOT-based material, is a promising possible organic thermoelectric material for a practical conversion module because the material reportedly has a large power factor. However, since PEDOT:Tos is mainly reported to be a p-type thermoelectric material, the development of PSS-free PEDOT with n-type thermoelectric properties is desirable. Thus, in order to search for PSS-free PEDOT with n-type thermoelectric properties, we investigated the doping concentration of PTSA dependence of the thermoelectric property using the first-principle calculation. The band structure and the density of state indicated that the n-type thermal electromotive force was attributed to the electrons’ large effective mass. Such electrons were produced thanks to the binding of the dopant PTSA to the benzene ring. The contribution of the electron to the Seebeck coefficient increased with increasing PTSA doping concentrations.

Origin of n type properties in single wall carbon nanotube films with anionic surfactants investigated by experimental and theoretical analyses

We investigated the origin of n-type thermoelectric properties in single-wall carbon nanotube (SWCNT) films with anionic surfactants via experimental analyses and first-principles calculations. Several types of anionic surfactants were employed to fabricate SWCNT films via drop-casting, followed by heat treatment at various temperatures. In particular, SWCNT films with sodium dodecylbenzene sulfonate (SDBS) surfactant heated to 350 °C exhibited a longer retention period, wherein the n-type Seebeck coefficient lasted for a maximum of 35 days. In x-ray photoelectron spectroscopy, SWCNT films with SDBS surfactant exhibited a larger amount of sodium than oxygen on the SWCNT surface. The electronic band structure and density of states of SWCNTs with oxygen atoms, oxygen molecules, water molecules, sulfur atoms, and sodium atoms were analyzed using first-principles calculations. The calculations showed that sodium atoms and oxygen molecules moved the Fermi level closer to the conduction and valence bands, respectively. The water molecules, oxygen, and sulfur atoms did not affect the Fermi level. Therefore, SWCNT films exhibited n-type thermoelectric properties when the interaction between the sodium atoms and the SWCNTs was larger than that between the oxygen molecules and the SWCNTs.

The thermoelectric performance of new structure SnSe studied by quotient graph and deep learning potential

The structure predicting and structure screening of new structure SnSe are studied by quotient graph and deep learning potential. Using the quotient graph, we predict the new structure based on the feature of the experimental structure. Facing many structures generated by the quotient graph and reducing computation cost, the deep learning potential is used to optimize the structure. Through the electronic fitness function, it is found that the new structure with space group no. 64 shows a good electrical property of p-type and n-type. Based on the new structure, the n-type and p-type thermoelectric properties are studied by First-principles calculations and Boltzmann transport theory. The mechanical stability and thermodynamic stability of the new structure are checked, indicating that the new structure is stable. Due to the cyclic structure, the new structure shows large values of bulk modulus (B ~ 62.82 GPa), shear modulus (G ~ 43.78 GPa), Young’s modulus (E ~ 106.59 GPa), Debye temperature (θ = 291 K), sound velocity (Va ~2890 m/s), and low value of Gruneisen parameter γ ~2.2, implying that strong Sn–Se atomic interactions and large lattice thermal conductivity. At 800 K, the figure of merit of p-type (1.83) is superior to that of n-type (1.68). The main scattering process of both charge transport and thermal transport is dominated by optical phonon branches. This work not only demonstrates the excellent property of the new structure but also provides insights to understand the transport performance of the cyclic structure.

Correlation between the air stability of n-type thermoelectric properties and defects in single-walled carbon nanotubes with anionic surfactants

Single-walled carbon nanotubes (SWCNTs) are promising thermoelectric materials for use as sustainable power sources for the Internet of Things technology due to their flexibility and excellent thermoelectric properties near 300 K. One of the most important challenges in the development of SWCNTs is achieving n-type thermoelectric properties with long air stability. Here, we investigated the correlation between the air stability of the n-type property and the defects of SWCNTs using two types of SWCNTs with different defect densities. SWCNT films with anionic surfactants were prepared using drop-casting, followed by heat treatment. Both types of SWCNT films exhibited approximately the same n-type Seebeck coefficient values at appropriate heat treatment temperatures. The SWCNT films with low defect density exhibited high electrical conductivity, but the n-type Seebeck coefficient was converted into a p-type one at 14 d. Conversely, the SWCNT films with high defect density exhibited low electrical conductivities but maintained the n-type Seebeck coefficient for 35 d. Therefore, the defect density of SWCNTs impacted the air-stability of the thermoelectric properties. This phenomenon possibly indicates that SWCNT films with high defect density were homogeneously coated with surfactants, thus preventing oxygen atoms from adhering to the film.

Enhanced thermoelectric performance of P-type CaMg2Bi1.98 and optimized CaAl2Si2-type Zintl phase module with equal cross-section area

Recently, Zintl phase Mg3Sb2 has displayed superior n-type thermoelectric properties. However, the corresponding p-type thermoelectric materials with high thermoelectric properties are still in urgent need. CaMg2Bi2-based Zintl compound attracts increasing enthusiasm in recent years due to its high carrier mobility and low lattice thermal conductivity. Here, Yb is used to replace Ca to further tune thermoelectric transport behavior of CaMg1.9Zn0.1Bi1.98, an optimized composition according to previous work. The synergistic effect of the enhanced carrier concentration caused by electronegativity difference in cation site and the suppressed lattice thermal conductivity induced by the stronger point defects scattering leads to the peak ZT of 1.0 in Ca0.65Yb0.35Mg1.9Zn0.1Bi1.98, which exceeds most of reported CaMg2Bi2-based materials. The maximum ZTeng of single p-type leg Ca0.65Yb0.35Mg1.9Zn0.1Bi1.98 is up to 0.54 between Tc = 300 K and Th = 773 K, catching up with the current highest level in 1-2-2 Bi-based materials. Moreover, the interrelationship between conversion efficiency and p-n pair cross-section area ratio (An/Ap) is considered. For n-type Mg3.1Co0.1Sb1.5Bi0.49Te0.01/p-type Ca0.65Yb0.35Mg1.9Zn0.1Bi1.98 pair, a maximum conversion efficiency of ~12% is obtained at the optimum An/Ap approaching to 1. This prominent conversion efficiency and equal cross-section area facilitate the module fabrication process and exhibit bright prospect of CaMg2Bi2-based thermoelectric materials.

Role of lone pair electrons in n-type thermoelectric properties of tin oxides ** **The data that support the findings of this study are available from the corresponding author upon reasonable request.

Oxide materials have shown promising thermoelectric applications due to their availability, tunability, and thermal stability. Among oxide materials, the layered tin oxides (SnO) attract raising attention in the electronic and optoelectronic field owing to their lone pair electrons. We have investigated the thermoelectric properties of layered SnO structures through first-principle calculations. SnO exhibits superior n-type thermoelectric properties and the metallicity of SnO becomes stronger with the number of layers increasing. The lone pair electrons around Sn atoms are the key factor to n-type properties and they will get bonded and anti-bonded in the case of interlayer interaction. Monolayer SnO exhibits the best thermoelectric performances and the average n-type ZT value of monolayer SnO can achieve 0.90 at 500–700 K. Our results demonstrate that layered SnO will be the potential n-type two-dimensional oxide thermoelectric material.

Realization of Both n- and p-Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe2 Alloying.

Successful applications of a thermoelectric material require simultaneous development of compatible n- and p-type counterparts. While the thermoelectric performance of p-type GeTe has been improved tremendously in recent years, it has been a challenge to find a compatible n-type GeTe counterpart due to the prevalence of intrinsic Ge vacancies. Herein, we have shown that alloying of AgBiSe2 with GeTe results in an intriguing evolution in its crystal and electronic structures, resulting in n-type thermoelectric properties. We have demonstrated that the ambient rhombohedral structure of pristine GeTe transforms into cubic phase in (GeTe)100-x(AgBiSe2)x for x ≥ 25, with concurrent change from its p-type electronic character to n-type character in electronic transport properties. Such change in structural and electronic properties is confirmed from the nonmonotonic variation of band gap, unit cell volume, electrical conductivity, and Seebeck coefficient, all of which show an inflection point around x ∼ 20, as well as from the temperature variations of synchrotron powder X-ray diffractions and differential scanning calorimetry. First-principles density functional theoretical (DFT) calculations explain that the shift toward n-type electronic character with increasing AgBiSe2 concentration arises due to increasing contribution of Bi p orbitals in the conduction band edge of (GeTe)100-x(AgBiSe2)x. This cubic n-type phase has promising thermoelectric properties with a band gap of ∼0.25 eV and ultralow lattice thermal conductivity that ranges between 0.3 and 0.6 W/mK. Further, we have shown that (GeTe)100-x(AgBiSe2)x has promising thermoelectric performance in the mid-temperature range (400-500 K) with maximum thermoelectric figure of merit, zT, reaching ∼1.3 in p-type (GeTe)80(AgBiSe2)20 at 467 K and ∼0.6 in n-type (GeTe)50(AgBiSe2)50 at 500 K.

Transfer of P-type to N-type Thermoelectric Properties of Ag-Sb-Te Thin Film Through Temperature Annealing and Its Electrical Power Generation

Ag-Sb-Te (AST) thin film was successfully fabricated on a flexible polyimide substrate by using DC magnetron sputtering from the AgSbTe (AST) target. As-deposited samples were annealed at temperatures between 300 and 450°C under vacuum for 30 min. Then, uni-leg AST thin film thermoelectric modules of five elements were fabricated. Thermal annealing induced a change of thermoelectric characteristic of the thin film from p-type material (300–350°C) to n-type material (400–450°C) through the change in structures (amorphous to crystalline, atomic composition ratio and surface roughness, etc.). The highest power factor was 0.97 mW m−1 K−2 and 0.065 mW m−1 K−2 for p-type and n-type, respectively. The maximum power generation of the uni-leg AST thin film thermoelectric module was approximately 0.88 nW for p-type and 0.54 nW for n-type, with a temperature difference of around 20 K.

Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy

The thermoelectric materials that work in radioisotope thermoelectric generators or space reactor power sources will be exposed to neutron irradiation and gamma irradiation for a long time. Herein, the influences of neutron irradiation doses between 1013 n/cm2 and 1015 n/cm2, and gamma irradiation of 104 Gy, on the transport properties of n- and p-type SiGe alloys were investigated. It was found that, neutron irradiation causes defects, and leads to a dramatic decrease in carrier mobility for both n- and p-type SiGe. As a result, the thermoelectric properties of both n- and p-type SiGe decline steeply after neutron irradiation. However, the thermoelectric properties of SiGe alloys can be restored by heat treatment at proper temperature. The n-type SiGe is more sensitive to neutron irradiation than p-type SiGe. After 1015 n/cm2 neutron irradiation, the electrical conductivity, power factor and ZT of n-type SiGe decrease to 0.014%, 5% and 3.8% that of an un-irradiated sample; while the electrical conductivity, power factor, and ZT of p-type SiGe decrease to 0.14%, 12% and 5.2% that of an un-irradiated sample. The healing temperature is 1273 K for n-type SiGe, while 623 K for p-type SiGe. Gamma irradiation has no obvious effect on the transport properties of SiGe alloys.

Hole-doped M4SiTe4 (M = Ta, Nb) as an efficient p-type thermoelectric material for low-temperature applications

Solid-state thermoelectric cooling is expected to be widely used in various cryogenic applications such as local cooling of superconducting devices. At present, however, thermoelectric cooling using p- and n-type Bi2Te3-based materials has been put to practical use only at room temperature. Recently, M4SiTe4 (M = Ta, Nb) has been found to show excellent n-type thermoelectric properties down to 50 K. This paper reports on the synthesis of high-performance p-type M4SiTe4 by Ti doping, which can be combined with n-type M4SiTe4 in a cooling device at low temperatures. The thermoelectric power factor of p-type M4SiTe4 reaches a maximum value of approximately 60 μW cm−1 K−2 at 210 K and exceeds the practical level in a wide temperature range of 130–270 K. A finite temperature drop by Peltier cooling was also achieved in a cooling device made of p- and n-type Ta4SiTe4 whisker crystals. These results clearly indicate that M4SiTe4 is promising to realize a practical thermoelectric cooler for use at low temperatures, which is not covered by Bi2Te3-based materials.

Thermoelectric properties of amorphous ZnOxNy thin films at room temperature

The thermoelectric properties of amorphous ZnOxNy (a-ZnON) thin films were investigated at room temperature. The a-ZnON thin films fabricated by nitrogen-plasma assisted pulsed laser deposition exhibited good n-type thermoelectric properties, of a power factor of up to 204 μW m−1 K−2. This value was more than twice higher than the value reported for known amorphous oxide semiconductors, which are candidate materials for IoT energy harvesting applications, having low processing temperatures suitable for plastic flexible substrates. The thermal conductivity of the a-ZnON thin films was in the range from 1.1 ± 0.2 to 1.4 ± 0.2 W m−1 K−1, which was low in comparison to amorphous oxide semiconductors. Due to the better properties, the thermoelectric figure of merit reached 0.042 at room temperature, which is significantly higher than that of known amorphous oxide semiconductors.