Thermoelectric Figure Of Merit Research Articles

Capillary compression induced outstanding n-type thermoelectric power factor in CNT films towards intelligent temperature controller

One-dimensional carbon nanotubes are promising candidates for thermoelectrics because of their excellent electrical and mechanical properties. However, the large n-type power factor remains elusive in macroscopic carbon nanotubes films. Herein, we report an outstanding n-type power factor of 6.75 mW m−1 K−2 for macroscopic carbon nanotubes films with high electrical and thermal conductivity. A high-power density curl-able thermoelectric generator is fabricated with the obtained carbon nanotubes films, which exhibits a high normalized power output density of 2.75 W m−1 at a temperature difference of 85 K. The value is higher than that of previously reported flexible all-inorganic thermoelectric generators (<0.3 W m−1). An intelligent temperature controller with automated temperature-controlling ability is fabricated by assembling these thermoelectric generators, which demonstrates the potential application of the carbon nanotubes films in automated thermal management of electronic devices where requires a large thermoelectric power factor and a large thermal conductivity simultaneously.

Wedge-Shape Al and Mg Co-doped Zinc Oxide Thin Films: A Facile Route to Achieve High Thermoelectric Power Factor

Thin film thermoelectric technology has immense potential to become a next-generation power source for small-scale electronics. However, the rapid development of thin film thermoelectric still lacks a controllable structural design to improve the performance of thermoelectric devices for required temperature applications. This work presented a controlled thermoelectric design of ZnO-based thin films by Al and Mg co-doping using ALD. Herein, the Mg-doped ZnO sample exhibits the highest Seebeck coefficient of -311.83 μVK-1 at 500oC, while the maximum thermoelectric power factor of 3.68 μWcm-1K-2 is obtained at 300oC, which drops for higher temperatures. This decrease in power factor resulted from the reduction in electrical conductivity above 300oC. Similarly, the Al and Mg co-doped ZnO sample (Mg/Al ≈2 at%) exhibits a high thermoelectric power factor of 3.85 μWcm-1K-2 for ZnO based material due to its moderate electrical conductivity and Seebeck coefficient value at 325oC and behave monotonically for elevated temperatures. Scanning electron microscope (SEM) images show the formation of wedge-shaped structures for Al-incorporated samples, which helps to boost the overall thermoelectric performance. Additionally, we performed XRD, UV-Vis, Hall, and AFM analysis to get a deep insight into structural, optical, electrical, and surface features of the grown thin films and their linkage with the thermoelectric properties.

Fast preparation and thermoelectric performance of AgSTe based materials via plasma activated sintering

AgSTe based materials have recently been identified as promising thermoelectric materials that have favorable properties at room temperature. They are usually obtained by conventional processes involving melting, annealing, and sintering, which incur significant energy and time expenditures. The present investigation involved the synthesis of Ag20S7Te3 compounds by a fast non-equilibrium methodology, i.e., plasma activated sintering from raw elemental powders. The monoclinic Ag20S7Te3 phase crystal was successfully formed at a temperature of 673 K, accompanied by the presence of a secondary monoclinic phase, Ag2S. The Ag20S7Te3 phase predominated in the monoclinic form, constituting a significant percentage at temperature of 873 K. Furthermore, the thermoelectric figure of merit (zT) of the AgSTe phase at 873 K was determined to be 0.42. The rapid sample synthesis described herein has the potential to significantly reduce the duration required for material synthesis, hence presenting a conspicuous advantage in the context of manufacturing on a wide scale.

Counterion docking: a general approach to reducing energetic disorder in doped polymeric semiconductors

Molecular doping plays an important role in controlling the carrier concentration of organic semiconductors. However, the introduction of dopant counterions often results in increased energetic disorder and traps due to the molecular packing disruption and Coulomb potential wells. To date, no general strategy has been proposed to reduce the counterion-induced structural and energetic disorder. Here, we demonstrate the critical role of non-covalent interactions (NCIs) between counterions and polymers. Employing a computer-aided approach, we identified the optimal counterions and discovered that NCIs determine their docking positions, which significantly affect the counterion-induced energetic disorder. With the optimal counterions, we successfully reduced the energetic disorder to levels even lower than that of the undoped polymer. As a result, we achieved a high n-doped electrical conductivity of over 200 S cm−1 and an eight-fold increase in the thermoelectric power factor. We found that the NCIs have substantial effects on doping efficiency, polymer backbone planarity, and Coulomb potential landscape. Our work not only provides a general strategy for identifying the most suitable counterions but also deepens our understanding of the counterion effects on doped polymeric semiconductors.

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb2Te3

Sb2Te3, a binary chalcogenide-based 3D topological insulator, attracts significant attention for its exceptional thermoelectric performance. We report the vibrational properties of magnetically doped Sb2Te3 thermoelectric material. Ni doping induces defect/disorder in the system and plays a positive role in engineering the thermoelectric properties through tuning the vibrational phonon modes. Synchrotron powder x-ray diffraction study confirms good crystalline quality and single-phase nature of the synthesized samples. The change in structural parameters, including B iso and strain, further corroborate with structural disorder. Detailed modification of phonon modes with doping and temperature variation is analysed from temperature-dependent Raman spectroscopic measurement. Compressive lattice strain is observed from the blue shift of Raman peaks owing to Ni incorporation in Sb site. An attempt is made to extract the lattice thermal conductivity from total thermal conductivity estimated through optothermal Raman studies. Hall concentration data support the change in temperature-dependent resistivity and thermopower. Remarkable increase in thermopower is observed after Ni doping. Simulation of the Pisarenko model, indicating the convergence of the valence band, explains the observed enhancement of thermopower in Sb2−x Ni x Te3. The energy gap between the light and heavy valence band at Γ point is found to be 30 meV (for Sb2Te3), which is reduced to 3 meV (in Sb1.98Ni0.02Te3). A significant increase in thermoelectric power factor is obtained from 715 μWm−1K−2 for pristine Sb2Te3 to 2415 μWm−1K−2 for Ni-doped Sb2Te3 sample. Finally, the thermoelectric figure of merit, ZT is found to increase by four times in Sb1.98Ni0.02Te3 than that of its pristine counterpart.

Ultralow thermal conductivity and high thermoelectric performance induced by dimensionality reduction in chain-like compounds X2PtSe2 (X=K, rb)

Balancing low lattice thermal conductivity (κL) with a high power factor is a major challenge in the research of thermoelectric (TE) materials. In this paper, we report on a class of chain-like compounds, X2PtSe2(X = K, Rb), characterized by strong lattice anharmonicity, weak bonds, and low phonon group velocities. Using first-principles calculations in conjunction with self-consistent phonon theory and the Boltzmann transport equation, we systematically investigate the thermal and electrical transport properties of X2PtSe2(X = K, Rb). At room temperature, the κL of K2PtSe2 and Rb2PtSe2 in the direction perpendicular to the Pt–Se chains is only 0.15 and 0.10 Wm−1K−1, respectively. Additionally, due to the low-dimensional nature of the Pt–Se chains, these compounds exhibit a ‘pudding-mold type’ band structure, contributing to a TE power factor. At 300K, under n-type doping, K2PtSe2 and Rb2PtSe2 achieve TE figures of merit (ZT) values of 1.66 and 1.67, respectively, in the direction perpendicular to the Pt–Se chains. At 500K, the ZT value of Rb2PtSe2 approaches 4, far surpassing traditional TE materials. These results indicate that the chain-like compounds X2PtSe2(X = K, Rb) exhibit excellent TE performance, achieving energy conversion efficiencies comparable to commercial transducer devices.

Investigation on the electrical and thermal properties of Cr-doped FeSe2 alloys

FeSe2 is a p-type semiconductor with a narrow band gap, which can be considered a potential thermoelectric material. Herin, the electrical and thermal properties of Cr-doped FeSe2, Fe1-xCrxSe2 (x = 0, 0.03, 0.06, and 0.09), polycrystalline alloys are investigated. All compositions show single-phase marcasite structures of FeSe2 with gradual decreases in lattice parameters with Cr doping x. With increasing x, the electrical conductivity gradually increases from 13 (x = 0) to 46 S/cm (x = 0.09), owing to a large increase in carrier concentration originated from the substitution of Cr2+ and Cr3+ at the Fe site. However, the magnitude of Seebeck coefficient decreases considerably at 300 K, resulting in decrease in power factor. In addition, the density-of-state effective mass decreases significantly from 6.0 m0–1.04 m0. At 700 K, the decrease in Seebeck coefficient is less severe. Although the total and lattice thermal conductivity decrease at all temperatures owing to additional phonon scattering of the extrinsic Cr ions, a thermoelectric figure of merit, zT, generally decreases compared to that of the pristine sample due to power factor decrease at 300 K. Meanwhile, a slight increase of zT to 0.11 is observed for x = 0.06 at 700 K.

Self-powered PEDOT: PSS/CSWCNT/Mxenes thermoelectric films and wearable electronics devices

In this work, Ti3C2–Cl is introduced into poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonic acid) / single-walled carbon nanotubes (PEDOT: PSS/SWCNT, noted as PPSC) films to prepare ternary thermoelectric films of PEDOT: PSS/SWCNT/Ti3C2–Cl (PPSCT). The microscopic morphology, structures, and thermoelectric properties of PPSC and PPSCT films show that the introduction of Ti3C2–Cl results in a tendency of decreasing electrical as well as thermal conductivity, and the Seebeck coefficient is increased. When the content of Ti3C2–Cl reaches 8 wt%, the conductivity, Seebeck coefficient, and thermal conductivity of the PPSCT films reach the optimum values of 1683 S/cm, 21.69 μV/K, and 14.97 W/mK, respectively, and the power factor (PF) and thermoelectric figure of merit (ZT) are 79.23 μW/mK2 and 1.58 × 10–3. The UPS and Hall effect results reveal that the improvement of the Seebeck effect of PPSCT mainly results from the ternary interfacial energy barrier as well as the change of carrier concentration. In addition, the wearable electronics devices demonstrate an output voltage of 4.5 mV and an output power of 54.36 nW under a 50 K temperature difference. The device displays a good monitoring sensitivity by reaching an output voltage of 0.6 mV at a 7 K temperature difference between the skin and the environment.

Order-N calculations for thermoelectric power factor based on linear response theory

We present an order-N quantum transport calculation methodology to evaluate thermoelectric transport coefficients, such as electric conductivity and Seebeck coefficient. Different from a conventional method using the electric conductivity spectrum, it obtains the coefficients directly from the correlation function between heat and electric current based on linear response theory. As an example, we apply the methodology to a two-dimensional square-lattice model with static disorder and confirm that the calculated results are consistent with those obtained by the conventional method. The proposed methodology provides an effective approach to evaluate the thermoelectric performance of micron-scale materials based on quantum mechanics from an atomistic viewpoint.

Combination of Counterion Size and Doping Concentration Determines the Electronic and Thermoelectric Properties of Semiconducting Polymers.

In both chemical and electrochemical doping of organic semiconductors (OSCs), a counterion, either from the electrolyte or ionized dopant, balances the charge introduced to the OSC. Despite the large influence of this counterion on OSC optical and electronic response, there remains substantial debate on how a fundamental parameter, ion size, impacts these properties. This work resolves much of this debateby accounting for two doping regimes. In the low-doping regime, the Coulomb binding energies between charge carrierson the OSC and the counterions are significant, and larger counterions lead to decreased Coulomb interactions, more delocalized charge carriers, and higher electrical conductivities. In the high-doping regime, the Coulomb binding energies become negligible due to the increased dielectric constant of the films and a smoothing of the energy landscape; thereby, the electrical conductivities depend primarily on the extent of morphological disorder in the OSC. Moreover, in regioregular poly(3-hexylthiophene), rr-P3HT, smaller counterions lead to greater bipolaron concentrations in the low-doping regime due to the increased Coulomb interactions. Emphasizing the impact of the counterion size, it is shown that larger counterions can lead to increased thermoelectric power factors for rr-P3HT.

Enhanced thermoelectric properties of carbon nanotubes/polyaniline fibers through engineering doping level and orientation

The rapid progress of miniaturized wearable electronics has put forward great requirements for organic fiber-based thermoelectric (TE) generators. Despite polyaniline (PANI) exhibits many outstanding attributes such as facile synthesis and low cost, as well as good environmental and thermal stability, only a few PANI-based fibers were fabricated and their TE efficiency needs to be further improved. In this work, the TE performance of wet-spun carbon nanotubes (CNTs)/PANI fibers was improved by synergistic engineering doping level of PANI and orientation of the fibers. The doping degree was optimized by varying coagulation baths, bath durations, and dopant loadings in the spinning solution, followed by fixing process during air drying to decrease shrinkage and enhance orientation of the fiber. Hexane coagulated CNTs/PANI fibers exhibited a higher doping degree of PANI compared to that of acetone and ethyl acetate, resulting in a maximum TE power factor of 77.4 μW m−1K−2 for 71 wt% CNTs/PANI fibers at PANI/dopant molar ratio of 2:1.25. Further fixing process induced a more oriented structure along the fibers, facilitating carrier transport and contributing to a significantly increased conductivity of 2155 S cm−1. Consequently, the CNTs/PANI fibers reached an optimal power factor of 91.8 μW m−1K−2. With outstanding TE performance and mechanical properties, the resultant fibers were assembled to fabricate a flexible TE generator, which generated a high output power of 2.5 nW with a temperature gradient of 10 K. These results demonstrate the potential of high-performance CNTs/PANI fibers to harvest body heat for the power supply of the wearable electronics.

Achieving thermoelectric properties of ultra-high-performance concrete using carbon nanotubes and fibers

The study investigated the impact of carbon nanotubes (CNTs), carbon fibers (CFs), steel fibers, and varying water-to-binder (W/B) ratios on the thermoelectric and mechanical properties of ultra-high-performance concrete (UHPC). Flowability tests revealed reduced flow with decreased water content and the addition of CNTs or CFs, particularly pronounced at a lower W/B ratio. Thermal gravimetric analysis and Fourier-transform infrared spectroscopy demonstrated differences in peak intensities and shifts in peaks related to the hydration products of the UHPC by the incorporation of the CNTs and CFs. The compressive strength and tensile performance increased with reduced W/B ratios and the inclusion of steel fibers, whereas the CNTs and CFs affected the strength differently based on their dispersion and interaction with other components that influenced porosity. The presence of steel fibers reduces the percolation threshold for CNTs and CFs, indicating a synergistic effect that enhances electron transport connectivity. The thermal conductivity increased with the addition of CNTs, CFs, and steel fibers, enhancing heat transfer within the UHPC. The thermoelectric figure of merit (ZT) values highlighted the combined impact of CNTs, CFs, steel fibers, and W/B ratios on the thermoelectric efficiency of the UHPC, showing significant improvements with the inclusion of steel fibers and the interplay between the CNTs and W/B ratios. Ultimately, upon introducing 1.5 % steel fibers and 0.3 % CNTs, a substantial enhancement in the thermoelectric ZT was observed, surpassing the standard UHPC values by 12 orders of magnitude.

Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined Cd3As2 Thin Films.

Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. This work systematically examines thermoelectric transport in a series of topological Dirac semimetal Cd3As2 thin films grown by molecular beam epitaxy. Surprisingly, significantly enhanced Seebeck effect and anomalous Nernst effect are found at cryogenic temperatures when the Cd3As2 layer is thin. In particular, a peak Seebeck coefficient of nearly 500µVK-1 and a corresponding thermoelectric power factor over 30mWK-2m-1 are observed at 5K in a 25-nm-thick sample. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modeling, and first-principles simulation, the contributions from bulk and surface conducting channels are isolated and the unusual thermoelectric properties are attributed to the topological surface states. The analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenictemperatures.

Wenzhou TE: A First-Principle-Calculated Thermoelectric Materials Database.

Since the implementation of the Materials Genome Project by the Obama administration in the United States, the development of various computational materials' databases has fundamentally expanded the choice of industries such as materials and energy. In the field of thermoelectric materials, the thermoelectric figure of merit (ZT) quantifies the performance of the material. From the viewpoint of calculations for vast materials, the ZT values are not easily obtained due to their computational complexity. Here, we show how to build a database of thermoelectric materials based on first-principle calculations for the electronic and heat transport of materials. Firstly, the initial structures are classified according to the values of bandgap and other basic properties using the clustering algorithm K-means in machine learning, and high-throughput first principle calculations are carried out for narrow-bandgap semiconductors which exhibit a potential thermoelectric application. The present framework of calculations mainly includes a deformation potential module, an electrical transport performance module, a mechanical and a thermodynamic properties module. We have also set up a search webpage for the calculated database of thermoelectric materials, providing search facilities and the ability to view the related physical properties of materials. Our work may inspire the construction of more computational databases of first-principle thermoelectric materials and accelerate research progress in the field of thermoelectrics.

Enhancement of Phase Stability and Thermoelectric Performance of Meta‐Stable AgSbTe2 by Thermal Cycling Process

AbstractThermoelectric materials are crucial components in thermoelectric devices employed for environmentally friendly solid‐state cooling and waste heat recovery, demanding not only high performance but also superior thermal or phase stability. The high‐performance thermoelectric material AgSbTe2 encounters challenges when utilized in thermoelectric modules due to the precipitation of Ag2Te, resulting in both thermally unstable characteristics and diminished performance. In this study, a thermal cycling process is employed to enhance the thermal stability and thermoelectric performance of AgSbTe2. Through thermal cycling, secondary phases of AgSbTe2 are made uniform, and the undesired Ag2Te is substituted with Sb2Te3 using an optimized thermal cycling process. As a result, the thermal stability of AgSbTe2 is enhanced due to its meta‐stable state, with &lt;5% variance in thermoelectric figure of merit (ZT) measurements, and the ZT value is raised from 0.8 to 1.7 at 643 K through the optimized thermal cycling. The findings indicate that thermal cycling is an effective strategy for enhancing the thermal stability and thermoelectric performance of AgSbTe2, presenting a novel approach for achieving uniform secondary phases in materials with phase separation or phase change characteristics.

Nanocrystal-based thermoelectric SnTe-NaSbSe2 alloys with strengthened band convergence and reduced thermal conductivity

Ternary I-V-VI2 colloidal NaSbSe2 nanocrystals are herein used to improve the performance of lead-free SnTe thermoelectric materials. We showcase a versatile bottom-up engineering approach to produce nanocrystal-based SnTe-NaSbSe2 alloys from the rapid hot press of colloidal nanocrystal building blocks. The incorporation of NaSbSe2 nanocrystals significantly enhances the Seebeck coefficient of SnTe. The band convergence and simultaneous increasing band gap of SnTe-NaSbSe2 alloys are certified by the first-principles density functional theory calculations. Besides, defect engineering generated by the incorporation of NaSbSe2 nanocrystals such as Sn vacancies, substitution point defects, dense dislocations, and strains generated by the NaSbSe2 nanoparticles incorporation result in a dramatic reduction of the lattice thermal conductivity below the amorphous limit of pure SnTe, down to 0.38 W m−1 K−1. As a consequence, power factors enhance up to 1.77 mW m−1 K−2, which is ∼193 % higher than that of the pristine SnTe, and thermoelectric figures of merit up to 1.15 at 823 K for (SnTe)0.85(NaSbSe2)0.15 are achieved.

Defect modification in enhancing thermopower factor of ZnO films without doping

This study was focused on unraveling the close dependence of the structural, morphological, and thermoelectric properties of sputtered ZnO films on base pressure. The ZnO film deposited at an optimized base pressure of 5 × 10−6 torr exhibited the highest thermoelectric power factor of 374.6 μW/mK2, corresponding to an electrical conductivity of 265 S/cm and a Seebeck coefficient of −124 μV/K at 583 K. The obtained results revealed that the positive effect of base pressure on enhancing thermoelectric properties of ZnO films is attributed to point-defect modification, including zinc vacancies, singly-, and doubly-charged oxygen vacancies. Based on these results, we propose that defect engineering is a facile and effective approach for improving the thermoelectric behavior of ZnO films, even without doping by controlling the sputtering conditions.

Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition.

We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.

DFT combined to Boltzmann transport theory for optoelectronic and thermoelectric properties investigations for Se (4 & 8 (at.%)) doped Li2SnS3

Cubic Li2SnS3 emerges as a noteworthy ionic conductor and a viable electrode material for lithium secondary batteries. Its application extends to solar cell technologies, owing to its commendable optoelectronic properties and high-power conversion efficiency. In this study, we present density functional theory (DFT)-based first principles calculations for Li2SnS3-xSex (x = 0, 4, and 8% (atomic percent (at.%)) utilizing the modified Becke Johnson (mBJ) approximations, proposing a compelling alternative. Our investigation reveals significant optical absorption in the ultraviolet region for Li2SnS3-xSex (x = 0, 4, and 8%), accompanied by modest effective mass and indirect band gaps of 2.18 eV for the pristine material. Conversely, doped materials exhibit direct band gaps, with values of 2.113 eV for 4% and 2.026 eV for 8%. Furthermore, the calculated thermoelectric power factor underscores the potential and efficacy of Li2SnS3-xSex in thermoelectric energy devices. The findings not only highlight the material’s promise for solar applications but also underscore its candidacy as a novel solid-state electrolyte for lithium-ion batteries. This stems from its robust thermal stability and notable lithium-ion conductivity, positioning Li2SnS3 as a compelling candidate for advanced energy storage technologies.

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions.

Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.