Transition-metal chalcogenide (TMC) nanowires are an important building block for semiconductor components, which is conducive to the miniaturization and integration for nano-electronic devices and optoelectronic functional devices. Here, using density-functional theory (DFT) methods, we unveil intriguing electronic properties of kinked Mo6S6 nanowires (Mo6S6-NWs.) The results demonstrate that the shorter kinked Mo6S6 nanostructures exhibit distinct semiconductor behavior compared to the intrinsic Mo6S6-NWs, with the band gap being highly dependent on the length of the intrinsic Mo6S6-NWs between the kinks. Importantly, the band gap of kinked Mo6S6-NWs can be predicted by the band-folding theory, and the predicted value is extremely close to the actual calculated value. In addition, under uniaxial tension and compression strain, the band gap of long kinked Mo6S6-NWs changes within a narrow range, indicating their excellent electronic stability. This is mainly attributed to the small contribution of Mo/S atoms in the kinked part to valence band maximum (VBM) and conduction band minimum (CBM). Our work provides a useful theoretical insight for electronic properties of kinked Mo6S6-NWs, which open up the possibility of tailoring the properties of TMC nanowires, providing an ideal candidate material for the construction of flexible nanodevices.