Textured Thin Films Research Articles

Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films

The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materials have been considered for application in ultra-scaled interconnects (below 5 nm), due to their topologically protected surface states that have reduced electron scattering. Recent theoretical work on the topological chiral semimetal CoSi suggests that this material could offer lower resistivity than Cu at dimensions smaller than 10 nm. Here we investigate the scaling trend of textured and amorphous CoSi thin films, deposited by molecular beam epitaxy in a thickness range between 2 and 82.5 nm. Contrary to predictions of standard resistivity models, we report here a reduction in resistivity for thin amorphous CoSi films, which is instead consistent with surface-dominated transport. Moreover, magnetotransport measurements reveal significant enhancement of the magnetoresistance in scaled films, highlighting the complex transport mechanisms present in these highly disordered films at thicknesses of a few nanometers.

Demonstration of Controlled Skyrmion Injection Across a Thickness Step.

Spintronic devices incorporating magnetic skyrmions have attracted significant interest recently. Such devices traditionally focus on controlling magnetic textures in 2D thin films. However, enhanced performance of spintronic properties through the exploitation of higher dimensionalities motivates the investigation of variable-thickness skyrmion devices. We report the demonstration of a skyrmion injection mechanism that utilizes charge currents to drive skyrmions across a thickness step and, consequently, a metastability barrier. Our measurements show that under certain temperature and field conditions skyrmions can be reversibly injected from a thin region of an FeGe lamella, where they exist as an equilibrium state, into a thicker region, where they can only persist as a metastable state. This injection is achieved with a current density of 3 × 108 A m-2, nearly 3 orders of magnitude lower than required to move magnetic domain walls. This highlights the possibility to use such an element as a skyrmion source/drain within future spintronic devices.

Effect of annealing temperature on crystallographic texture, magnetic and microwave properties of barium ferrite thin films

Due to it has large saturation magnetization (Ms), high magnetocrystalline anisotropy field and high ferromagnetic resonance (FMR) frequency, barium ferrite (BaM) has attracted more and more attentions in the fields of magnetic recording media, permanent magnets and microwave devices. Here, BaM thin films were deposited on Pt/TiO2/SiO2/Si substrates, and the effect of annealing temperature on the microstructure, magnetic and microwave properties of barium ferrite thin films was investigated in detail. It is found that when the BaM thin film was annealed at 1035 °C, it has good properties. The XRD data provide clear evidence that the BaM thin films have high c-axis orientation, and the Lotgering factor is as high as 0.96. The AFM morphology show that BaM grains are out of the film plane, and they are hexagonal. The magnetic hysteresis curves indicated that both saturated magnetization (4πMs), remanence ratio and coercive (Hc) for out of plane increase with increasing Ta first, then decreased, and get the maximum value at 1035 °C. The ferromagnetic resonance (FMR) measurement show that the FMR linewidth is 143 Oe@50 GHz, it means that this this sample has low microwave loss in millimeter wave loss, and the FMR absorption can be tuned by applied magnetic field. These results make sure that this BaM thin film is possible use in millimeter wave devices such as filers, circulators and isolators.

Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics

Mainstream high-k gate materials, such as SiO2, Al2O3, and HfZrO2, are in demand for modern electronics. However, these dielectrics possess lower thermal conductivity, significantly limiting thermal dissipation in electronic devices. Herein, we propose the utilization of complementary metal-oxide semiconductor- (CMOS) compatible high power impulse magnetron sputtering (HiPIMS) for the mass production of highly textured hexagonal boron nitride (h-BN) on (100)-, (110)-, and (111)-oriented SrTiO3 substrates. The as-prepared films exhibit distinct vertical alignments, as evidenced by HRTEM and FTIR analysis. Notably, the R value, ranging from 0.46 to 0.50, is associated with the stress in the film. Importantly, distinct anisotropies in thermal conductivity, dielectric constant, and optical band gap are observed. Furthermore, the values of thermal conductivity in these highly textured h-BN films are 4.5, 5.7, and 5.3 Wm−1K−1, which is almost three times larger than those of SiO2 (1.4 Wm−1K−1) and Al2O3 (1.35 Wm−1K−1), and even an order of magnitude larger than that of HfZrO2 (0.67 Wm−1K−1). The combination of excellent dielectric characteristics, favorable thermal conductivity, and superior stability over a broad temperature range makes this novel material outperform conventional dielectric gate materials in high-power electronics applications.

Growth of Textured Chalcogenide Thin Films and Their Functionalization through Confinement

A number of chalcogenides show a remarkable portfolio of properties, which enables a plethora of applications including thermoelectric power generation and phase change material (PCM)‐based information storage. PCMs exhibit fast and reversible switching between two (typically, amorphous and crystalline) states, characterized by different optical and electrical properties. In the last decade, textured chalcogenide thin films have been investigated to develop a better understanding of structure – property relationships, improve material performance and understand how these properties change upon reducing film thickness. In this review, the present knowledge concerning the textured growth is summarized, focusing on films of GeTe, Sb2Te3, and GeSbTe compounds. In particular, the impact of different deposition methods, substrate surface modifications, and methods to influence film formation is reviewed. In the second part of this review, confinement effects are discussed. Surprisingly pronounced changes in atomic arrangement, that affect film properties, and device performance are presented. These changes are attributed to the unconventional bonding mechanism in these chalcogenides coined metavalent bonding, which is trongly affected by the confinement. Bonding becomes covalent‐like in the two‐dimensional limit, whereas Metavalent Bonding emerges for thicker films, where electron delocalization is increased This explains the pronounced property changes with film thickness.

Laser texturing and oxidation of TiZrTa thin films to improve the biocompatible performance of titanium alloys

Titanium (Ti) and Ti alloys possess extensive applications in the medical field due to their non-toxic, biocompatible, and antibacterial properties. This study investigates the biocompatibility enhancement of a Ti-based alloy, Ti-6Al-4V, through a multi-step process involving cathodic arc ion plating of a TiZrTa thin film and subsequent laser-textured oxidation (LTO). LTO treatment produced a structured microtopography with regular groove patterns, including straight lines (L-s), circles (L-c), and checkboards (L-ch), resulting in surface oxidation and the formation of various oxides on the TiZrTa coating. Microstructure analyses revealed substantial alterations in surface topography induced by laser texturing. Antibacterial assessments against Staphylococcus aureus (S. aureus) showed that the films with LTO treatment did not exhibit significant advantages after 12 or 24 h of coculture because the laser-textured portions consisted of a combination of the film and the substrate, and the antibacterial effect was not obvious. Coatings with LTO treatment significantly improved L-929 mouse fibroblasts cell viability at 48 h, particularly for samples with a 50 μm spacing of straight and circular patterns (L-s and L-c). After two weeks of MG-63 human osteosarcoma cell culture, the viability of all samples reached similar levels. It suggested that the TiZrTa-coated Ti-6Al-4V exhibited good biocompatibility with both cells. This study contributed to the understanding of surface modification techniques for enhancing the biocompatibility of Ti-based alloys in biomedical applications.

Communication—Texture and Bandgap Tuning of Phase Pure Cu2O Thin Films Grown by a Simple Potentiostatic Electrodeposition Technique

Highly textured phase pure Cu2O thin films have been grown by a simple electrodeposition technique with varying deposition voltages (−0.3 to −1.0 V). The surface morphology characterized by Scanning Electron Microscopy (SEM) revealed that the deposited thin films coherently carpet the underlying substrate and are composed of sharp faceted well-defined grains of 0.5–1.0 μm sizes. XRD analyses showed that all films are composed of polycrystalline cubic Cu2O phase only and have average crystalline domain size in the range of 30–73 nm. The preferred crystalline orientation of phase pure Cu2O films was found to be changing from (200) to (111) with increasing cathodic voltages and showed the highest (111) and (200) crystalline texture coefficient while growing at −1.0 and −0.8 V respectively. The optical bandgap of the as-grown samples was calculated in the range of 1.95–2.20 eV using UV–vis Transmission data. The performance of Cu2O/FTO photocathodes was tested by estimating LED “ON/OFF” modulated surface photovoltage into a photoelectrochemical cell at a zero bias.

Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles

The cubic polytype of silicon (Si) is the most commercialized semiconductor material and finds applications in numerous electronic and optoelectronic devices, such as solar cells. However, recent reports on the synthesis of the hexagonal 4H Si polytype have attracted the attention of the scientific community to understand its functional properties. Here, we report the electronic, vibrational, and optical properties of the 4H Si polytype obtained with predictive first-principles calculations, with an emphasis of phonon-assisted absorption in the indirect regime. Compared to the cubic polytype, 4H Si shows a slightly narrower indirect gap by ∼0.05 eV. The calculated phonon-assisted optical spectra show that 4H Si exhibits a stronger absorption coefficient than cubic Si across the visible and IR spectral regions. We further evaluate the short-circuit current density of textured thin-films. We demonstrate that 4H Si can achieve the same short-circuit current density for a five times thinner film compared to the cubic polytype, which mainly resulted from absorption in the indirect gap regime. Our work demonstrates the advantages of 4H Si for thin-film silicon-based solar-cell applications.

A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides.

Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, a novel approach is reported to grow chalcogenides-hybrid pulsed laser deposition-wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides, and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. This work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.

Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films

HfO2-based ferroelectric materials have excellent CMOS compatibility and polarization even in ultrathin films, which is regarded as promising candidate material for memory devices and related electronic devices. However, as the ferroelectric layer thickness scaling down, the consistency of device performance is inevitably affected by the complex polyphase and polycrystalline nature of HfO2-based ferroelectric thin films. Therefore, obtaining and controlling the texture of HfO2-based ferroelectric thin films is extremely important for regulating polarization orientation and improving ferroelectric polarization. In this work, 10 nm Hf0.5Zr0.5O2 (HZO) films were prepared by atomic layer deposition (ALD) on Nb-doped SrTiO3 (NSTO) single crystal substrates. The texture and orientation of HZO films were analyzed through the state-of-the-art spherical aberration corrected transmission electron microscope (Cs-TEM) technique. The domain matching epitaxy between HZO films and NSTO substrate helps eliminate lattice mismatch and residual misfit strain, and ultimately leads to the formation of <112> texture in HZO ferroelectric films. The obtained results represent lattice and interface play an extremely important role in regulating the ferroelectricity of HfO2-based films, which provides a way to design ultra-thin HfO2-based materials with excellent ferroelectric polarization by controlling the crystal structure and orientation.

Effect of deposition temperature on topography and electrochemical water oxidation of NiO thin films

The deposition temperature plays a significant role in controlling the crystallinity, morphology, and texture of thin films. Herein, we report the fabrication of nickel oxide thin films on a fluorine-doped tin oxide-coated glass substrate via a single-step aerosol-assisted chemical vapor deposition technique. Variable temperatures from 450 to 525 °C were used for the fabrication of these NiO thin films. The crystalline structure of nickel oxide thin films was determined by X-ray diffraction which showed cubic structure having space group Fm3m, and unit cell lattice parameters of a = b = c = 4.17 Å that crystallize preferentially along (200) plane. While the Raman spectroscopic study revealed the presence of peaks corresponding to nickel oxide structure. The surface chemical composition and oxidation states were investigated by X-ray photoelectron spectroscopy. Moreover, field-emission scanning electron microscopy aided in examining the temperature-dependent topography and microstructure of films. It was observed that when deposition temperature is increased from 450 to 525 °C, the bandgap energy decreased from 3.59 to 3.41 eV. The electrocatalytic activity for the oxygen evolution reaction was performed under alkaline conditions, using linear sweep voltammetry and cyclic voltammetry at different scan rates. Moreover, ohmic drop and charge transfer resistance are estimated by electrochemical impedance spectroscopy. The nickel oxide deposited at 500 °C showed the highest current density and the earliest onset overpotential as compared with other samples at different temperatures. Morphology-dependent catalytic activity is attributed to substrate temperature which significantly affects the growth of nickel oxide. Cyclic voltammetry reveals the Ni redox feature due to the active phase of nickel (oxy)hydroxide (NiOOH) and there was no significant current until 1.5 VRHE. Measurements of activity as a function of substrate temperature were consistent with the hypothesis that different morphology of the electrode exerts different charge transfer activation on nickel oxide. These results suggested that electrocatalysts coupled with controlled morphology can be tuned in terms of high performance, commercial applicability, and water-splitting devices.

Improving the crystallinity and texture of oblique-angle-deposited AlN thin films using reactive synchronized HiPIMS

Many technologies, such as surface-acoustic-wave (SAW) resonators, sensors, and piezoelectric MEMS require highly-oriented and textured functional thin films. The best results are typically achieved for on-axis sputter geometries, but in some scenarios, this is not feasible, such as during co-deposition from multiple magnetrons or when coating substrates with high aspect ratios. Ionized physical vapor deposition (PVD) techniques such as HiPIMS can be used to accelerate the film-forming species onto the growing film using substrate-bias potentials, thus increasing adatom mobility and film texture. However, gas-ion incorporation can limit the feasibility of such synthesis approaches for defect-sensitive functional thin films. This work reports on the oblique-angle deposition of highly textured, c-axis oriented AlN (0002) films using reactive metal-ion synchronized HiPIMS. AlN thin films deposited using direct current magnetron sputtering (DCMS) and HiPIMS are discussed for comparison and the effect of ion irradiation through substrate biasing is investigated. We find that combining HiPIMS with a moderate substrate bias of only −30 V improves the crystalline quality and texture of the films significantly, while the process-gas incorporation and point defects formation can be further reduced by synchronizing the negative substrate bias potential to the Al-rich fraction of each HiPIMS pulse. In addition to a pronounced out-of-plane texture, the films show uniform polarization of the grains making this synthesis route suitable for piezoelectric applications. While the compressive stress in the films is still comparatively high, the results already demonstrate, that metal-ion synchronized HiPIMS can yield promising results for the synthesis of functional thin films under oblique-angle deposition conditions - even with low substrate-bias potentials.

Van der Waals epitaxy of pulsed laser deposited antimony thin films on lattice-matched and amorphous substrates

Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and two-dimensional materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous substrates using pulsed laser deposition. C-axis out-of-plane textured Sb thin films were successfully deposited on Sb2Te3 and SiO2/Si3N4 substrates. In the case of growth on Sb2Te3, we show that an intermediate phase is formed at the Sb2Te3–Sb interface playing a crucial role in forming a solid coupling and thus maintaining epitaxy leading to the production of high-quality Sb thin films. A 3–4 nm amorphous Sb seed layer was used to induce texture and suitable surface termination for the growth of Sb thin films on amorphous substrates. The deposition parameters were fine-tuned, and the growth was monitored in situ by reflection high energy electron diffraction. Scanning/transmission electron microscopy unveiled the local structure of produced films showing the formation of ꞵ-phase Sb thin films. Our results demonstrate the feasibility to produce very smooth high-quality antimony thin films with uniform coverage, from few layers to large thicknesses, using pulsed laser deposition. We believe the results of our work on scalable and controllable Sb growth have the potential to open up research on phase change materials and optoelectronics research.

Tuning the texture and polarity of ZnO thin films deposited by spatial atomic layer deposition through the addition of a volatile shape-directing agent

Many functional devices are nowadays based on thin films deposited by physical or chemical vapour deposition methods. Being able to control the texture of the films is very important to tune their functional properties. Texture is commonly tuned by either using single crystalline substrates or seed layers, or by modifying the deposition parameters (gas flows, precursor concentration, temperature, etc.). In this study a volatile shape-directing agent (VSDA), namely 4-(5)-Methylimidazole (4-(5)-MeIM), is used during the deposition of ZnO thin films by Atmospheric-Pressure Spatial Atomic Layer Deposition (AP-SALD) to control the texture and growth rate of the films. In particular, ZnO thin films can be grown preferentially along [001], resulting in an enhanced piezoelectric coefficient. In addition, the polarity of the ZnO films also depends on the amount of VSDA used. An innovative industry-compatible approach to control texture and polarity of ZnO thin films is presented, having a clear potential for other functional materials and applications.

Topological transport properties of highly oriented Bi2Te3 thin film deposited by sputtering

Topological insulators (TIs) are the promising materials for next-generation technology due to their exotic features such as spin momentum locking, conducting surface states, etc. However, the high-quality growth of TIs by sputtering technique, which is one of the foremost industrial requirements, is extremely challenging. Also, the demonstration of simple investigation protocols to characterize topological properties of TIs using electron-transport methods is highly desirable. Here, we report the quantitative investigation of non-trivial parameters employing magnetotransport measurements on a prototypical highly textured Bi2Te3 TI thin film prepared by sputtering. Through the systematic analyses of the temperature and magnetic field dependent resistivity, all topological parameters associated with TIs, such as coherency factor , Berry phase (), mass term (m), the dephasing parameter (p), slope of temperature dependent conductivity correction () and the surface state penetration depth (λ) are estimated by using the modified ‘Hikami–Larkin–Nagaoka’, ‘Lu–Shen’ and ‘Altshuler–Aronov’ models. The obtained values of topological parameters are well comparable to those reported on molecular beam epitaxy grown TIs. The epitaxial growth of Bi2Te3 film using sputtering, and investigation of the non-trivial topological states from its electron-transport behavior are important for their fundamental understanding and technological applications.

Methods for controlling the texture of thin films of wedge-shaped amphiphilic compounds based on 2,3,4-tris(dodecyloxy)benzenesulfonic acid

Methods for controlling the texture of thin films of wedge-shaped amphiphilic compounds based on 2,3,4-tris(dodecyloxy)benzenesulfonic acid

The Multiplicity of π-π Interactions of Fused-Ring Electron Acceptor Polymorphs on the Exciton Migration and Charge Transport.

Efficient long-range exciton migration and charge transport are the key parameters for organic photovoltaic materials, which strongly depend on the molecular stacking modes. Herein, we extracted the stacked structures of the archetype fused-ring electron acceptor molecule, ITIC, based on the information on four polymorphic crystals and investigated the relationship between molecular stacking modes and exciton migration/charge transport properties through the intermolecular Coulomb coupling and charge transfer integral calculation. Experimentally, the thin film texture is crystallized through a post-annealing treatment through grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements, which lead to the enhanced exciton migration through exciton-exciton annihilation in the femtosecond transient absorption (fs-TA) measurements. This work demonstrates the relationship between the molecular arrangement and the exciton migration and electron transport and highlights the significance of optimizing molecular stacking for the development of high-performance electron acceptor materials.

Competitive actions of MnSi in the epitaxial growth of Mn5Si3 thin films on Si(111)

Some magnetically ordered phases of the ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ crystal are proving to be prototypes for the study of the new fundamental spin physics related to the spontaneous breaking of the time-reversal symmetry despite a zero net magnetization. Here, we report on a route to grow epitaxial ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ thin films on Si(111). To this end, we use Mn and Si codeposition in a molecular beam epitaxy system and carefully tune the deposition rates, the growth temperature, and the annealing temperature. We assessed the silicide phase-formation and morphology using reflection high-energy electron diffraction, x-ray diffraction, high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy. Layers containing only ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ could be stabilized under very restrictive conditions, by tuning the Mn/Si flux ratio to match the compound stoichiometry and adjusting the substrate temperature during growth to 443 K. HRTEM imaging revealed the existence of an interfacial amorphous layer of few nanometers thickness. Annealing the heterostructure up to 573 K led to the formation of MnSi at the vicinity of the ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$/Si(111) interface, which significantly reduced the nucleation barrier of ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$. High-quality crystalline ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ thin films were then formed with the following epitaxial relationships: ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$(0001)$[01\overline{1}0]//\mathrm{MnSi}(111)[\overline{2}11]//\mathrm{Si}(111)[1\overline{1}0]$. Our experiments showed that the formation of MnSi is enhanced at a growth temperature above 473 K or for a longer annealing step, while the crystalline quality of the ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ overlayer is correspondingly degraded leading to textured thin films. The growth pathways and structural properties of the manganese silicides can be rationalized in terms of reactions maximizing the free-energy lowering rate. Moreover, we found that the magnetic and the magnetotransport properties can be used as an efficient tool to track both ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ crystallinity and proportion in the deposited layers.

Characterization of [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives with End-Capping Groups as Solution-Processable Organic Semiconductors for Organic Field-Effect Transistors

Solution-processable [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives with various end-capping groups, 2-(phenylethynyl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (Compound 1), 2-octyl-7-(5-(phenylethynyl)thiophen-2-yl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (Compound 2), and triisopropyl((5-(7-octylbenzo[b]benzo[4,5]thieno[2,3-d]thiophen-2-yl)thiophen-2-yl)ethynyl)silane (Compound 3), have been synthesized and characterized as active layers for organic field-effect transistors (OFETs). Thermal, optical, and electrochemical properties of the newly synthesized compounds were characterized using thermogravimetric analysis (TGA), a differential scanning calorimeter (DSC), UV–vis spectroscopy, and cyclic voltammetry (CV). Thin films of each compound were formed using the solution-shearing method and the thin film surface morphology and texture of the corresponding films were characterized using atomic force microscopy (AFM) and θ–2θ X-ray diffraction (XRD). All semiconductors exhibited p-channel characteristics in ambient and Compound 1 showed the highest electrical performance with a carrier mobility of ~0.03 cm2/Vs and current on/off ratio of ~106.

Optimizing mechanical properties and Ag ion release rate of silver coatings deposited on Ti-based high entropy alloys

This paper details the characterization of microstructure, texture, mechanical properties, and ion release behavior of antibacterial Ag thin films sputtered on two novel biomedical high entropy alloys (HEAs), namely the Ti23Ta10Hf27Nb12Zr28 (HEATi23) and Ti28Ta10Hf30Nb14Zr18 (HEATi28) alloys. Specifically, the influences of varying deposition time and Ar flow rate were investigated to reveal the mechanisms dictating the microstructure, texture, and mechanical properties of the coatings. In addition, static immersion experiments were carried out in simulated body fluid (SBF) for 28 days to establish the relationship between ion release from the coatings and the deposition parameters, microstructure, and surface texture. It was shown that texture evolution in Ag thin films depends on both film thickness and Ar flow rate, such that there exists a critical thickness at which the energy minimization mechanism is altered. A very good correlation was also observed between an increase in (111) peak intensity and a decrease in released Ag ion fraction. Overall, the findings of the work presented herein suggest that the alterations in Ag deposition parameters could be optimized to obtain the desired mechanical properties while enhancing the biocompatibility of the HEA substrates by coating them with antibacterial Ag films.