Phosphorene is a two-dimensional (2D) semiconductor material that has attracted a lot of interest in several fields of applications. The anisotropic character of this new category of materials allows the tunability of electrical, optical, thermal, and other properties by the application of fields or forces. In the present work, using density functional theory (DFT) with the hybrid functional and Boltzmann transport equation, electronic properties, phonon dispersion and thermoelectric properties were calculated for AB bilayer phosphorene. To study the effect of the layer deformation on the thermoelectric properties of phosphorene, uniaxial tensile and compressive strain along the armchair and the zigzag direction was applied. The results revealed that AB bilayer phosphorene under a uniaxial tensile strain of 3 % along the armchair direction improve the thermoelectric properties, giving rise to a significant increase of the figure of merit to ZT = 1.24 at n-type doping. The increase of ZT upon uniaxial deformation corresponds to an increase of 110 % with respect to ZT of the unstrained AB bilayer phosphorene structure (ZT = 0.59 at 300 K).