Temperature Stability Of Dielectric Properties Research Articles

Achieving excellent temperature-stable dielectric properties of Bi0.5Na0.5TiO3-based lead-free ceramics via doping AgNbO3

The lead-free ceramics ([Formula: see text])(0.94[Formula: see text][Formula: see text][Formula: see text]TiO3-0.06BiAlO3)-[Formula: see text]AgNbO3 (denoted as BNBTA-[Formula: see text]AN) were synthesized via a solid-state sintering method. The effect of AgNbO3 doping amount on dielectric properties of the ceramics was studied systematically. X-ray diffraction (XRD), scanning electron microscope (SEM) and Raman spectroscope were used to detect the structure of the ceramics. Temperature-dependent dielectric spectra, frequency-dependent dielectric constant and alternating current (ac) electric conductance at various temperatures were measured. The doping of AgNbO3 greatly reduces dielectric constant around Curie temperature and thus enhances the temperature stability of the dielectric constant. The ceramic BNBTA-0.03AN exhibits excellent temperature-stable dielectric properties with temperature coefficient of capacitance (TCC) [Formula: see text]15% between 55∘C and 418∘C with temperature window 363∘C and small changes of dielectric constant and dielectric loss from 100 Hz to 1 MHz at different temperatures. The obtained ceramics are expected to be used in high-temperature capacitors due to its excellent temperature stability.

Thermally Stable Silicone Elastomer Composites Based on MoS2@Biomass-Derived Carbon with a High Dielectric Constant and Ultralow Loss for Flexible Microwave Electronics.

With the miniaturization and integration of electronic components in wireless communication and wearable devices, the demand for low-cost flexible composites with temperature-stable high dielectric constant and low loss has substantially increased. However, such comprehensive properties are fundamentally difficult to combine for conventional conductive and ceramic composites. Here, we develop silicone elastomer (SE) composites based on hydrothermally grown MoS2 on tissue paper-derived cellulose carbon (CC). Such design promoted the formation of microcapacitors, multiple interfaces, and defects reinforcing interfacial and defect polarizations and resulting in a high dielectric constant of 9.83 at 10 GHz with low filler loading of 15 wt %. Unlike highly conductive fillers, MoS2@CC with low conductivity ensured a very low loss tangent of 7.6 × 10-3, which was also influenced by the filler dispersion and adhesion to the matrix. Apart from breaking the typical conflict between high dielectric constant and low losses of traditional conductive composites, MoS2@CC SE composites were highly flexible with temperature-stable dielectric properties making them attractive as flexible substrates in microstrip antenna applications and extreme environment electronics. Moreover, recycling from waste tissue paper makes them potential candidates as low-cost and sustainable dielectric composites.

Temperature stable dielectric properties of Mg2TiO4–MgTiO3–CaTiO3 Ceramics Over a Wide Temperature range

The zero resonant frequency temperature coefficient (τf) of microwave dielectric ceramics (MWDCs) at high and low temperature have attracted great attention in the development of microwave communication equipment. In this work, the Mg2TiO4–MgTiO3–CaTiO3 (MMC) ceramics with meeting the application requirements of 5G communication were prepared by traditional solid-phase sintering after investigating the relationship among phase compositions of xMg2TiO4-(0.931-x)MgTiO3-0.069CaTiO3 and 0.34Mg2TiO4-0.591MgTiO3-yCaTiO3, sintering process, and dielectric properties in detail. The results show that the dielectric properties of MMC ceramics are strongly affected by the phase relative contents of MgTiO3, Mg2TiO4 and CaTiO3. For instance, MMC ceramics with approximate τf = 0 is contributed by mutual compensation of Mg2TiO4 and MgTiO3, in which the Mg2TiO4 phase plays an important role in decreasing the τf value; and the increase of CaTiO3 will greatly increase the εr value for MMC ceramics, while has a negative effect in the Q × f value. After three-phase regulation, the 0.32Mg2TiO4-0.611MgTiO3-0.069CaTiO3 microwave dielectric ceramic has a better dielectric temperature stability, associated with dielectric properties of εr = 19.7, Q × f = 55,400 GHz (at 8.43 GHz), τf- = 4.5 ppm/°C (−40 °C–25 °C), and τf+ = −5.1 ppm/°C (25 °C–90 °C).

High energy storage density and temperature stable dielectric properties of (1-x)Bi0.5(Na0.82K0.18)0.5Ti0.99(Y0.5Nb0.5)0.01O3-xNaNbO3 ceramics

The development of lead-free ceramics with high energy storage density is critical due to the human health and environmental hazards of lead and the demand to miniaturize and integrate electronic devices. Nevertheless, the high applied electric field limits their use in integrated circuits. In this work, (1-x) Bi0.5(Na0.82K0.18)0.5Ti0.99(Y0.5Nb0.5)0.01O3-xNaNbO3 (BNKTYN-100xNN) ceramics were prepared, and excellent energy storage properties were obtained. It has revealed that NaNbO3 dopant reduces remanent polarization and increases relaxor degree. BNKTYN-9NN ceramics has high energy storage density (Wrec =1.6 J/cm3) and responsivity (ξ = Wrec/E = 145.5 J/(kV•m2)) under 110 kV/cm. Meanwhile, good temperature stability (20–120 °C) and fatigue resistance (105 cycles) were also obtained in BNKTYN-9NN ceramics. In addition, doping NaNbO3 suppresses the dielectric anomaly peak, and BNKTYN-9NN ceramics has excellent temperature-stable dielectric permittivity from 53° to 447°C. These results suggest that BNKTYN-100xNN ceramics are promising for energy storage equipment.

Enhanced energy storage density with excellent temperature-stable dielectric properties of (1-x)[(Bi0.5Na0.5)0.94Ba0.06TiO3]-xAgNbO3 lead-free ceramics

Lead-free (1-x)[(Bi0.5Na0.5)0.94Ba0.06TiO3]-xAgNbO3 (abbreviated as BNTBT-100xAN) ceramics were fabricated using a conventional solid-phase reaction technique. The effect of the antiferroelectric AgNbO3 dopants for fatigue resistance, energy-storage density, temperature-stable permittivity, and conductivity mechanism was systematically investigated. The addition of AgNbO3 led to the decrease of remnant polarization and the increase of dielectric breakdown strength, a large effective energy-storage density of ~1.27 J/cm3 corresponding to the conversion efficiency of ~ 77.5% for BNTBT-5AN ceramic were attained under applied 105 kV/cm field. Meanwhile, it exhibited an outstanding fatigue-resistant performance at 70 kV/cm fixed field up to 105 cycles accompanied with excellent temperature-stable properties in the temperature range of 30 °C ~ 120 °C. Besides, BNTBT-5AN sample has also obtained outstanding temperature-stable permittivity, which was associated with the enhancement of the ergodic relaxor domain structure. A little variance of dielectric content (Δε'/ε'150 °C ≤ ± 15%) was acquired from 40 °C to 387 °C with a small tangent loss (tanδ ≤ 0.05) between 50 °C and 461 °C. Hence, it revealed that the high energy storage properties and excellent dielectric temperature stability for BNTBT-5AN ceramic were conducive to its better applications in electronic equipment.

Enhanced electrical and photoluminescence properties of BiSbO4-doped CaCu3Ti4O12 ceramics by modifying grain boundary response

CaCu3Ti4O12-xwt%BiSbO4 ceramics (CCTO-xwt%BSO, x = 0, 1, 2, 3) were prepared by solid-state reaction method. The microstructure, dielectric properties, varistor properties, photoluminescence properties of CCTO-xwt%BSO ceramics were studied in this work. Results showed that all samples formed CaCu3Ti4O12 (CCTO) single phase. Doping BiSbO4 (BSO) restrained the abnormal grain growth and increased the grain boundary density of ceramics. The introduction of BSO led to the increase of the grain boundary resistance, reducing the dielectric loss and enhancing the temperature stability of dielectric properties. The nonlinear electrical characteristics are enhanced with proper concentration of BSO. And the improved varistor performance with breakdown electric field of ∼3.98–34.6 and nonlinear coefficient of ∼1.49–2.96 are obtained for CCTO-xwt%BSO samples. In addition, the photoluminescent emission of the samples is enhanced with the addition of appropriate equivalent BSO, showing the potential applications in novel devices with photoluminescent/electrical multifunctional properties.

High-temperature dielectric polymers with high breakdown strength and energy density via constructing the electron traps in blends

The n-type semiconductive polymer with perylene diimide (PTCBI) filler can immobilize electrons to reduce charge transport in the blends. In this paper, the influence of PTCBI loading on the dielectric and energy storage performances of PTCBI/PEI blends was studied. The results showed that the highest dielectric constant of 7 at 1 KHz was found in 4 wt% PTCBI/PEI blends. Importantly, PTCBI/PEI blends presented excellent temperature stability of dielectric properties from 25 ℃ to 150 ℃. The breakdown strength of PTCBI/PEI blends improved from 359 kV/mm to 485 kV/mm when the increased content of PTCBI filler was below 1 wt%. The η of 86% and the maximal discharge energy density (Ud) of 8.0 J/cm3 were achieved at 540 kV/mm in 1 wt% PTCBI/PEI blends. Meanwhile, the η of 82% and the Ud of 5.12 J/cm3 at 500 kV/mm at 100 ℃ was obtained.

High energy storage density and temperature-stable dielectric properties for (1-x)Bi0.38Na0.38Sr0.24TiO3-xBaSnO3 lead-free relaxor ceramics

Relaxor ferroelectrics are promising candidates for energy storage equipment due to their excellent energy-storage properties. Lead-free (1-x)Bi0.38Na0.38Sr0.24TiO3-xBaSnO3 (abbreviated as BNST-100xBS) relaxor ceramics were synthesized by a traditional solid-phase sintering method. The influences of the addition of BaSnO3 dopants for the energy storage and dielectric temperature-stable properties of BNST-100xBS ceramics were systemically investigated. All samples exhibited a typical pseudo-cubic symmetry structure and obtained the dense microstructure. The ergodic relaxor behavior of all ceramics was observed and revealed a trend of increase as a function of composition. All samples showed a single grain conduction mechanism and the activation energy decreased with the addition of composition. It is related to the generation of oxygen vacancies induced by the defect dipoles. BNST-2.5BS ceramic exhibited an outstanding recoverable energy density of ~1.42 J/cm3 with the corresponding efficiency of ~79.7% at 115 kV/cm field. In addition, excellent temperature-stable permittivity (43–255 °C) was obtained for BNST-7.5BS ceramic. Hence, BNST-2.5BS ceramic revealed excellent energy density properties and BNST-7.5BS exhibited outstanding temperature-stable dielectric permittivity, which was beneficial to use in energy storage equipment and other device applications.

High temperature energy storage properties of Bi0.5Na0.5TiO3 based ceramics modified by NaNbO3

Bi0.5Na0.5TiO3 based ceramics have attracted many researchers’ attentions due to their versatility. The temperature stability of dielectric properties of BNT-BT ceramics is reported to be improved by NaNbO3 and tungsten bronze-structured Sr0.8Na0.4Nb2O6. But their effects on energy storage properties are still unknown. In this work, NaNbO3 and tungsten bronze-structured compound Sr0.8Na0.4Nb2O6 modified Bi0.5Na0.5TiO3-0.06BaTiO3 ceramics (1-x)(0.98(0.94Bi0.5Na0.5TiO3-0.06BaTiO3)−0.02Sr0.8Na0.4Nb2O6)-xNaNbO3, x = 0.15–0.30, abbreviated as BNT-BT-SNN-xNN) were designed and prepared. It is found that NaNbO3 is conducive to enhance the energy storage properties. BNT-BT-SNN-0.20NN has optimum energy storage properties, with the recoverable energy-storage density (Wrec) of 1.52 J/cm3 and energy-storage efficiency (η) of 82%, under the applied electric field of 140 kV/cm. In addition, the energy-storage properties exhibit good temperature stability, with variances of Wrec and η being less than 8.70% and 1.99% respectively in the temperature range from room temperature (RT) to 160 °C. Furthermore, the overdamped and underdamped discharge energy storage properties were also studied. The energy density Wd, discharge time t0.9, current density CD, and power density PD of BNT-BT-SNN-0.20NN ceramic are very stable from room temperature to 100 °C. These results indicate that NaNbO3 compound is beneficial to improve the energy storage properties and their temperature stability of Bi0.5Na0.5TiO3-based ceramics.

Novel lead-free (1-x)Sr0.7Bi0.2TiO3-xLa(Mg0.5Zr0.5)O3 energy storage ceramics with high charge-discharge and excellent temperature-stable dielectric properties

In this study, novel lead-free (1-x)Sr0·7Bi0·2TiO3-xLa(Mg0·5Zr0.5)O3 ((1-x)SBT-xLMZ) ceramics were designed and fabricated by the conventional solid-state reaction method. The dielectric performance, energy storage characteristics and charge-discharge behavior of the ceramics were systematically investigated. Specifically, the temperature stability of dielectric constant is improved by doping SBT with LMZ. On a separate note, BDS is also enhanced ascribed to the reduction of the grain size. Consequently, the 0.87SBT-0.13LMZ exhibits high critical electric field of 340 kV/cm with ultrahigh efficiency (η) of 98.2% and recoverable energy storage density (Wrec) of 1.22 J/cm3. Moreover, pulsed charge-discharge test elucidates that 0.87SBT-0.13LMZ possesses great thermal stability (30 °C–150 °C) along with a fast discharge period of 0.125 μs, high power density (PD) of 72.38 MW/cm3 as well as a high pulsed discharge energy density (1.2 J/cm3) at 380 kV/cm. Based on these outstanding characteristics, the 0.87SBT-0.13LMZ is considered as a potential candidate for pulse systems.

Large field-induced strain with enhanced temperature-stable dielectric properties of AgNbO3-modified (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xAgNbO3 lead-free piezoelectric ceramics (abbreviated as BNBT-100xAN) were prepared using the conventional solid-state sintering method. The effects of the introduction of AgNbO3 (AN) dopants for the dielectric and piezoelectric performances of BNBT-100xAN ceramics were systematically studied. The XRD patterns and Raman spectra demonstrated that AN as a modifier was successfully diffused into the BNBT-100xAN lattice and revealed a pseudo-cubic symmetry structure. All samples exhibited a dense surface morphology accompanied by the uniform distribution of elements. A large bipolar strain of ~0.501% and unipolar strain of ~0.481% corresponding to the normalized strain d33* of ~740 p.m./V were achieved for BNBT-1AN ceramic at 65 kV/cm field. The BNBT-4AN ceramic exhibited an excellent temperature-stable permittivity with the range from 59 to 380 °C and its dielectric loss was less than 0.02 between 97 °C and 329 °C. These results revealed that BNBT-100xAN ceramics were more hopeful candidates for actuators, strain sensors, and high-temperature capacitors.

High‐temperature dielectric and energy storage properties of Bi0.5Na0.5TiO3‐based ceramics modified by Sr0.8Na0.4Nb2O6

AbstractSr0.8Na0.4Nb2O6with a tungsten bronze structure is introduced into perovskite‐structured 0.94(Bi0.5Na0.5)TiO3‐0.06BaTiO3composition (abbreviated as BNT‐BT‐xSNN, x = 0‐0.04). The temperature stability of dielectric properties and energy storage performance is found to be effectively enhanced by Sr0.8Na0.4Nb2O6dopant. When x is 0.03, the temperature ranges covering |ε'‐ε'150°C|/ε'150°C≤15% andtanδ≤ 0.02 are 43°C‐404°C and 90°C‐422°C, respectively. More importantly,ε′can be retained as high as 3304 at 150°C. Besides, the variances of energy storage density and its efficiency are 6.4% and 5.3%, respectively, in the temperature range from room temperature (RT) to 180°C. Therefore, this work provides a new method of compositional modification in BNT‐based materials to improve their temperature stability of dielectric and energy storage properties.

Enhanced Energy-Storage Properties of Ta Modified BNT − BT − NN Lead-Free Ceramics

Lead-free 0.9(0.92Bi0.5Na0.5TiO3–0.08BaTiO3)–0.1(NaNb(1- x )Ta x O3) ceramics (abbreviated as BNBT − NN1- x T x ), x = 0, 0.25, 0.50, 0.75 and 1.00, were prepared by conventional solid-state mixed oxide route. The effects of Ta substitution on the crystal structure, morphology, dielectric, ferroelectric as well as energy-storage properties were systematically investigated. X-ray diffraction revealed a single-phase perovskite structure for x ≤ 0.75 with coexisting rhombohedral and tetragonal phases. With increasing Ta substitution, a weakening of tetragonal distortion was observed. The SEM micrographs of all samples displayed dense microstructure with an average grain size of 0.70–0.99 µm. Good temperature stability of dielectric properties was maintained in the whole range of Ta substitution. The composition with x = 0.25 showed an optimum energy-storage density of 0.37 J/cm3 and the energy-storage efficiency of 75.1% at 50 kV/cm, thus indicating the promising application of BNBT–NN1-xTx ceramics as energy-storage capacitors.

Large strain with enhanced energy-storage and temperature stable dielectric properties in Bi0.38Na0.38Sr0.24Ti(1-x)(Mn1/3Nb2/3)xO3 ceramics

A series of novel Bi0.38Na0.38Sr0.24Ti(1-x)(Mn1/3Nb2/3)xO3 lead-free ceramics (BNST-100xMN) were designed and fabricated. The dielectric, ferroelectric, energy-storage, electrostrain properties, and impedance performance of these materials were systematically investigated. A large strain response under low driving electric field was obtained that benefits from the enhanced relaxor-to-ferroelectric phase transition. The optimum piezoelectric stain coefficient d33* of 930 pm/V (under 40 kV/cm) was achieved in BNST-1MN composition. The substitution by MN dopant gave rise to a homogeneous micro-morphology with small grains that gave rise to an enhanced high breakdown strength (BDS). Slim and slanted ferroelectric hysteresis was obtained by introducing a larger amount of MN, and hence the BNST-2MN ceramic exhibits a high energy-storage density of 1.30 J/cm3 at 110 kV/cm, accompanied with an excellent fatigue-free behavior. The dielectric response exhibited a stable high temperature dielectric property with low dielectric loss. These results indicate that BNST-100xMN ceramics are promising candidates for the actuator and energy storage applications.

Multi-phase coexistence and temperature-stable dielectric properties in BaTiO3/ZnO composite ceramics

BaTiO3:100xZnO composite ceramics with different ZnO particle sizes were prepared by using a conventional solid-state method. Phase constitution, microstructure and dielectric properties of BaTiO3:100xZnO composite ceramics are investigated. Compared to micrometer scaled ZnO particles, nanometer scaled ZnO particles tend to agglomerate at lower ZnO contents in the BaTiO3:100xZnO composite ceramics. The introduction of ZnO in BaTiO3 leads to the reduction of grain size, decrease of the tetragonality and shift of phase transition temperature. The optimum composition is BaTiO3 with 20 wt. % nanometer scaled ZnO particles, which has stable permittivity and low dielectric loss from -100 to 160 °C. The stable dielectric properties are proposed to be beneficiated from the stress induced multi-phase coexistence.

Crystal structure and temperature dependence of permittivity in barium aluminate based solid solutions

AbstractThis study systematically investigated the structural, dielectric, and ferroelectric properties of BaAl(2−2x)(Mg0.5Ti0.5)2xO4 ceramics in the 0 ≤ x ≤ 0.04 range. Single‐phase solid solutions in the P63 space group with hexagonal crystal symmetry were confirmed in the composition range of 0 ≤ x ≤ 0.03. The bond lengths of Al1/(Mg,Ti)–O, Al2/(Mg,Ti)–O, and Al3/(Mg,Ti)–O increased with the increase in x, as confirmed through the Rietveld refinement and evolutions of corresponding modes in Raman spectra. The temperature stability of dielectric properties improved at a composition around x = 0.03, and the dielectric constant εr ascended with the increase in x. Ultrabroad temperature stability (−100°C to 700°C) was obtained, and an optimal combination (εr = 18.5, tan δ < 10−3, −22 ppm/°C ≤ TCC ≤ +20 ppm/°C, resistivity ~4.5 × 1014 Ω·cm) was achieved for the x = 0.03 ceramic sintered at 1260°C in air for 6 hours. The increase in stability was ascribed to the variations in axial bonds, and lattice distortions were determined through high‐resolution transmission electron microscopy. The x = 0.03 ceramic could be a promising candidate for C0G or NP0 multilayer ceramic capacitors because of its low loss, high reliability, superior insulating properties and comparatively low‐cost raw materials.

Enhanced energy-storage performance and temperature-stable dielectric properties of (1-x)[(Na0.5Bi0.5)0.95Ba0.05]0.98La0.02TiO3-xK0.5Na0.5NbO3 lead-free ceramics

Abstract Polycrystalline (1-x)[(Na0.5Bi0.5)0.95Ba0.05]0.98La0.02TiO3-xK0.5Na0.5NbO3 systems were prepared using the solid-state reaction technique. Modification of (Na0.5Bi0.5)0.95Ba0.05]0.98La0.02TiO3 ceramic with a proper amount of K0.5Na0.5NbO3 can effectively improve the temperature-stable of dielectric properties. A variation in dielectric constant is maintained smaller than ±5% from 80 to 300 °C accompanied with a low dielectric loss (≤0.04). The relaxor properties of the doped samples are significantly enhanced. A high energy storage density of 1.1 J/cm3 and efficiency ~80% at 90 kV/cm are achieved in the x = 0.05 composition. Hence, the as-prepared ceramics might be practical in dielectric constant which can work stably at a high temperature range and pulsed capacitors.

Effect of Dy2O3 content on the dielectric, ferroelectric, and energy storage properties of lead-free 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 bulk ceramics

In the past decades, lead-free ceramics with high polarization, low remnant polarization and high electric breakdown strength have drawn a lot of attention because of their potential applications in dielectric capacitors with excellent energy storage performance. In the current investigation, we develop a novel lead-free Dy doped 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 ceramics, which were fabricated by the conventional electroceramic processing route. By doping Dy2O3 into 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 with various contents from 0.1 at.% to 0.5 at.%, pure perovskite phases and relatively dense structures were obtained. The increase of Dy2O3 concentration not only shifts the Tm toward to lower temperature, but also reduces the permittivity and gain sizes, thus enhancing the temperature stability of dielectric properties. The enhanced dielectric energy storage properties were systematically investigated by testing the polarization–electric field hysteresis loops as a function of the applied electric field, temperature, and loading cycles. The dielectric energy storage density of in 0.1 at.% doped 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 is 1.59 J/cm3, which is nearly twice higher than that of undoped NBT–ST. Hence, the Dy modified 0.5Na0.5Bi0.5TiO3–0.5SrTiO3 ceramics have exhibited potential application as dielectric capacitors with relatively good energy storage performance.

Enhanced temperature stable dielectric properties and energy-storage density of BaSnO3-modified (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

A series of (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBaSnO3 (BNBT-100xBSN, x = 0–20) lead-free ceramics were synthesized using a conventional high-temperature solid-state reaction route. The effects of BaSnO3 on the dielectric, ferroelectric and energy-storage performance of BNBT-BSN were systematically investigated. Temperature dependent permittivity curves indicated the obviously enhanced relaxor ferroelectric property. The introduction of BaSnO3 reduced the temperature corresponding to the first dielectric anomaly, which facilitated the dielectric temperature stability. △ε'/ε'150°C varied no more than 15% within the temperature range of up to 338 °C (45–383 °C) for BNBT-15BSN. A slimed P-E loop was obtained with the remnant polarization of 0.4 μC/cm2 for BNBT-15BSN. Moreover, the breakdown field intensity of BNBT-BSN increased effectively from 80 kV/cm to 115 kV/cm. Therefore, an optimum energy-storage performance was obtained in BNBT-15BSN with the energy-storage density of 1.2 J/cm3 whose energy-storage efficiency reached 86.7%. Furthermore, the possible contributions of defect and vacancy to relaxation and conductance mechanism were discussed by studying the impedance and electric modulus. The results above indicated the BNBT-100xBSN be a promising lead-free candidate for energy-storage capacitors.

Dielectric, ferroelectric and energy storage properties of lead-free (1-x)Ba0.9Sr0.1TiO3-xBi(Zn0.5Zr0.5)O3 ferroelectric ceramics sintered at lower temperature

Abstract Recently, ferroelectric ceramics with high maximum polarization, low remnant polarization and high electric breakdown strength (BDS) have attracted much attention due to their potential applications in energy storage capacitors. In this work, we show a novel kind of (Ba,Sr)TiO3 (BST)-based lead-free ferroelectric ceramics, i.e., (1-x)Ba0.9Sr0.1TiO3-xBi(Zn0.5Zr0.5)O3 (BST-xBZZ) solid solutions, which were fabricated by the traditional solid-state reaction process. By introducing the BZZ into BST with a content from 0.05 to 0.20, purely pseudocubic perovskite phases and highly dense structures are obtained. The increase of the BZZ content not only shifts the TC toward to lower temperature, but also induces strong relaxor behaviors with diffuse phase transition characteristics, thus improving the temperature stability of dielectric properties. Of special interest is the improved energy storage properties, which were systematically evaluated by measuring the polarization-electric field (P-E) hysteresis loops as a function of electric field, frequency and loading cycle. It is found that BT-0.15BZZ ceramic achieves a maximum energy density of 1.11 J/cm3, which is attributed to the improvement of BDS. In addition, relatively good frequency stability and fatigue resistance of this composition suggest its potential application in energy storage devices.