Temperature-induced Degradation Research Articles

Enhancing performance of Prosopis juliflora fiber reinforced epoxy composites with silane treatment and Syzygium cumini filler

The utilization of natural fibers and fillers in composite materials has gained significant attention for their potential to enhance mechanical, thermal, and tribological properties while promoting sustainability. In this study, Prosopis juliflora fiber (PJF) reinforced epoxy composites, treated with silane and incorporating Syzygium cumini filler (SCF), were investigated to assess their performance across various parameters. The composites were subjected to comprehensive mechanical, tribological, thermo-gravimetric, Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), 3D profilometer, and morphology studies to elucidate the effects of silane treatment and SCF content on composite properties. The results of the mechanical characterization revealed significant improvements in tensile strength, impact strength, and microhardness in silane-treated composites with higher SCF content compared to untreated samples and those with lower SCF content. Specifically, the ST/SCF3 composite exhibited the highest values, with a tensile strength of 118.65 ± 4.63 MPa, impact strength of 27.83 ± 1.96 kJ/m2, and microhardness of 91.63 ± 2.84 HV. Tribological analysis indicated enhanced wear resistance and reduced coefficient of friction in silane-treated composites with higher SCF content, with the ST/SCF3 composite demonstrating the lowest wear loss (62 μm) and frictional force (5.2 N). Thermal characterization revealed improved thermal stability in silane-treated composites, particularly in the ST/SCF1 and ST/SCF3 formulations, suggesting increased resistance to temperature-induced degradation.

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

Influence of AlOx Interlayers on LeTID Kinetics in Ga-Doped Cz-Si

Light and elevated temperature-induced degradation (LeTID) is causing a reduction in efficiency especially in p-type silicon based solar cells. It is assumed to be strongly influenced by the hydrogen content in the bulk material. The presented work focuses on the impact of differently thick (5-25 nm) atomic layer-deposited aluminum oxide (AlOx) interlayers underneath the hydrogen-rich silicon nitride (SiNy:H) capping layer. The interlayer acts as a diffusion barrier for H during the firing step. It is demonstrated that the AlOx interlayer has a comparable effect on the LeTID kinetics in Ga-doped Cz-Si (Cz-Si:Ga) as it is observed in B-doped Cz-Si (Cz-Si:B). Additionally, it substantially minimizes lifetime degradation in the Cz-Si:Ga sample. With a determined ratio of electron to hole capture cross sections k=26(3), the degradation phenomena are attributed to the LeTID kinetics. Deposition of AlOx barrier layers exceeding 10 nm in thickness does not yield additional positive effects. Resistivity measurements revealed that the change in hole concentration correlates with the defect density for varying AlOx layer thicknesses. The doping concentration seems to influence the change in maximum defect density for varying AlOx layer thicknesses.

Effect of Different Regeneration Processes on LID Degradation Mechanisms in B-doped p-type c-Si PERC Solar Cells in Industrial Production

Light-induced degradation (LID) and elevated temperature-induced degradation (LeTID) mechanisms negatively affect the performance of p-type Cz-Si-based solar cells. In this study, the degradation rates under illumination were investigated for non-metallized and metallized PERC cells with different base resistivities at different temperatures. These bifacial PERC cells are produced from own-produced ingots and wafers in a vertically integrated environment. The effect of different regeneration processes, using either illuminated annealing or direct current injection used in standard production against LID, is also investigated.

Fabrication of curcumin-loaded oleogels using camellia oil bodies and gum arabic/chitosan coatings for controlled release applications

This study has explored the potential of plant-derived oil bodies (OBs)-based oleogels as novel drug delivery systems for in vitro release under simulated physiological conditions. To obtain stable OBs-based oleogels, gum arabic (GA) and chitosan (CH) were coated onto the curcumin-loaded OBs using an electrostatic deposition technique, followed by 2,3,4-trihydroxybenzaldehyde (TB) induced Schiff-base cross-linking. Microstructural analyses indicated successful encapsulation of curcumin into the hydrophobic domain of the OBs through a pH-driven method combined with ultrasound treatment. The curcumin encapsulation efficiency of OBs increased up to 83.65 % and 92.18 % when GA and GA-CH coatings were applied, respectively, compared to uncoated OBs (63.47 %). In addition, GA-CH coatings retained the structural integrity of oleogel droplets with superior oil-holding capacity (99.07 %), while TB addition induced interconnected 3D-network structures with excellent gel strength (≥4.8 × 105 Pa) and thermal stability (≥80 °C). GA-CH coated oleogels appeared to provide the best protection for loaded bioactive against UV irradiation and high temperature-induced degradation during long-term storage. The combination of biopolymer coatings and TB-induced Schiff-base cross-linking synergistically hindered the simulated gastric degradability of oleogels, releasing only 23.35 %, 12.46 % and 7.19 % of curcumin by GA, GA-CH and GA-CH-TB stabilized oleogels, respectively, while also resulting in sustained release effects during intestinal conditions.

Tracking the binding site of anticancer drug fluxoridin with Fe-related proteins to achieve intelligent drug delivery

In cancer cells that need a lot of iron for growth and metastasis, halo-transferrin (TF-containing iron) enters the cell with the help of the transferrin receptor 1 (TFR1) protein. If the anticancer drug can bind to the iron site by interacting with apo-transferrin (iron-free FT), it can enter the cancer cell by the same mechanism. Two iron-related proteins, Bovine liver catalase (BLC) and apo-Transferrin (TF), that are important in cancer patients were selected and their interaction with the anti-cancer drug Floxuridine (FUDR) was investigated. Here, the protective role of FUDR was evaluated by several variables such as drug concentration, interaction time, and temperature-induced degradation of enzyme function. The results showed that the protective effect of the FUDR is greater in high concentrations (in 5 × 10-5 M:1.78 % and 2.59 % after 24 and 48 h). The interaction of the FUDR with both proteins can reduce the intensity of the fluorescence emission by a static mechanism. The binding strength of the FUDR with both proteins was almost similar and with the order of 104 M−1 (Kb = 3.90 ± 0.41 × 104 M−1 for BLC-FUDR and 5.01 ± 0.36 × 104 M−1 for TF-FUDR at 310 K). The thermodynamic calculations (in agreement with the docking results) indicated that FUDR-protein complex formation was exothermic and the main binding forces in the binding process were van der Waals interactions and hydrogen bonds. Both fluorophores tryptophan (Trp) and tyrosine (Tyr) of both proteins had significant roles in fluorescence quenching and the interaction process, the polarity of their microenvironment changed. CD results showed that the secondary structure changes of TF are slightly more than BLC. Molecular docking showed that the binding of the FUDR to TF is very close to the Fe-specific site and is placed in the cavity among the wrapping domain, N-Terminal arm, and β-barrel in BLC.

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

In recent years, polycrystalline passivated emitter and rear cell (PERC) solar cells have developed rapidly, but less research has been conducted on the preparation process of their rear side passivation layers on standard solar cell production lines. In this work, a Al2O3/SiNx rear side stacked passivation layer for polycrystalline PERC solar cells was prepared using the plasma- enhanced chemical vapor deposition (PECVD) method. The effects of different Al2O3 layer thicknesses (6.8~25.6 nm), SiNx layer thicknesses (65~150 nm) and SiNx refractive indices (2.0~2.2) on the passivation effect and electrical performance were systematically investigated, which were adjusted by TMA flow rate, conveyor belt speed and the flow ratio of SiH4 and NH3, respectively. In addition, external quantum efficiency (EQE) and elevated temperature-induced degradation experiments were also carried out to check the cell performance. The results showed that the best passivation effect was achieved at 10.8 nm Al2O3 layer, 120 nm SiNx layer and 2.2 SiNx layer refractive index. Under the optimal conditions mentioned above, the highest efficiency was 19.20%, corresponding Voc was 647 mV, Isc was 9.21 A and FF was 79.18%. Meanwhile, when the refraction index was 2.2, the EQE of the cell in the long-wavelength band (800–1000 nm) was improved. Moreover, the decrease in conversion efficiency after 45 h LeTID was around 0.55% under the different refraction indices. The above results can provide a reference for the industrial production of polycrystalline PERC solar cells.

Investigation on the thermo-oxidative aging resistance of nitrile-butadiene rubber/polyamide elastomer blend and the swelling behaviors in fuels predicted via Hansen solubility parameter method

Temperature-induced degradation of nitrile butadiene rubber (NBR) can negatively affect its mechanical properties. Further improvement in the aging resistance of the elastomer is required in view of the stringent application requirements. Polyamide elastomers (PAE) were used as reinforcing agents of NBR to prepare NBR/PAE blend by physical blending. Interaction between NBR and PAE was investigated using FTIR, DMA, SEM and swelling test. After aging at 110 and 130 °C for 7 days, NBR/PAE blend exhibited the minimum change of tensile strength. The reason why NBR/PAE blend could maintain excellent tensile strength retention during thermo-oxidative aging was investigated. Finally, the swelling behavior of rubbers in biodiesel and IRM 903 was measured and validated in combination with the Hansen solubility parameter (HSP) method. FTIR and swelling mass changes were also used to explain the reduction of the mechanical properties of NBR/PAE blend in biodiesel. This work presents useful guidelines for the development of thermo-oxidative aging resistance rubber products.

Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors

Reports showing that hydrogen and group-III acceptors play an important role in Light- and elevated Temperature-induced Degradation (LeTID) of Si-based solar cells highlight the need for a better understanding of interactions between these two species. In this contribution, a combination of junction spectroscopy techniques and first principles modelling has been used to study hydrogen-induced changes in electrical properties of either boron or gallium Czochralski-grown silicon co-doped with phosphorus in order to produce n-type material facilitating novel techniques to assess recombination active defects. The interactions of hydrogen with acceptor atoms have been induced via annealing of these co-doped hydrogenated samples with the application of reverse bias (RBA). These treatments have resulted in a significant increase in the net shallow donor concentration in depletion regions of both materials and in the appearance of a strong electron emission signal due to a trap with an energy level at about Ec −0.18 eV in the DLTS spectra of Si:P + B material. It is argued that this trap is related to the donor level of a BH2 complex. Calculations using density functional theory have shown that the BH2 defect has a charge-state dependent geometry, which turns out to be crucial for the proposed non-radiative recombination mechanism. The BH2 defect is therefore suggested to be the root cause of LeTID in boron-doped Si. In contrast, modelling results predict that GaH2 is a defect with shallow energy levels, without the characteristic features of a recombination centre. This is corroborated by the results of electrical measurements on hydrogenated Si:P + Ga subjected to RBA. Conventional annealing treatments were subsequently used to assess the thermal stability of acceptor-H related defects. Based on the obtained results, the peculiarities of hydrogen interactions with boron and gallium acceptors are discussed.

ABI5 promotes heat stress-induced chlorophyll degradation by modulating the stability of MYB44 in cucumber.

The yellowing of leaves caused by the decomposition of chlorophyll (Chl) is a characteristic event during senescence, which can be induced by various environmental stresses. However, the molecular mechanisms of high temperature-induced Chl degradation in horticultural plants remain poorly understood. Here, we found that heat stress induced Chl degradation and the expression of ABI5 and MYB44 in cucumber. Silencing of ABI5 compromised heat stress-induced Chl degradation, and the transcription of pheophytinase (PPH) and pheophorbide a oxygenase (PAO), two key genes in Chl catabolic pathway, but silencing of MYB44 exhibited the opposite results. Furthermore, ABI5 interacted with MYB44 in vitro and in vivo. ABI5 positively regulated heat stress-induced Chl degradation through two pathways. ABI5 directly bound to PPH and PAO promoters to promote their expression, leading to accelerating Chl degradation. On the other hand, the interaction between ABI5 and MYB44 reduced the binding of MYB44 to PPH and PAO promoters and led to the ubiquitination-depended protein degradation of MYB44, thereby alleviating the transcription inhibitory effect of MYB44 on PPH and PAO. Taken together, our findings propose a new regulatory network for ABI5 in regulating heat stress-induced Chl degradation.

Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers

Polysilicon (poly-Si)-on-oxide passivating contact structures (POLO/TOPCon) enable high-efficiency solar cells as they simultaneously provide a very high level of surface passivation and a high conductance for either electrons or holes. The ease of incorporation with existing manufacturing lines and their tolerance for high-temperature processing has increased the wide acceptance of this structure in the PV industry. In this report, we explore the effects of short high-temperature annealing required for effective hydrogenation and formation of ohmic screen-printed contacts across a wide temperature range (636 °C–846 °C) on the stability of passivating contact structures. We study this on p-type c-Si substrates with phosphorus-doped (n-type) or boron-doped (p-type) polysilicon contacts capped with either an AlOx or SiNx coating. Our experimental results show that irrespective of the poly-Si doping type, AlOx-capped samples suffer a loss in surface passivation across the investigated temperature range, while SiNx-capped samples show an improvement at lower annealing temperatures. Above 744 °C, severely ruptured blisters occur for the samples coated with a SiNx layer, leading to lift-off of the poly layer in extreme cases, and in all cases, significant surface passivation losses, up to 99%. A study of the long-term stability of these fired samples under 1-sun illumination @ 140 °C shows that they suffer from both bulk and surface-like instabilities. Two degradation cycles were observed: the first, a boron-oxygen light-induced degradation (BO-LID) observed after 5 min, with capture cross-section ratios of 15.8–19.2, and a slower secondary degradation, similar to light and elevated temperature-induced degradation (LeTID), with maximum degradation reached after ∼ 14 days. The presence of a silicon nitride layer does not appear to influence the kinetics of post-degradation recovery. Our results suggest that the effect of firing may be influenced by the polarity of the bulk c-Si or perhaps the chemistry of the SiNx film and highlight that passivating contact structures based on p-type c-Si may offer better long-term stability than those based on n-type c-Si.

Trends in Light and Temperature Sensitivity Recommendations among Licensed Biotechnology Drug Products

PurposeInherent structural and functional properties of biotechnology-derived therapeutic biologics make them susceptible to light- and temperature-induced degradation and consequently can influence their quality. Photosensitivity of therapeutic proteins continues to be examined, but the commonalities and trends of storage conditions and information about light and temperature sensitivity among currently licensed therapeutic proteins has not been previously surveyed.MethodsUsing a comprehensive and relational database approach, we conducted a scientific survey of all licensed biotechnology-derived drug products with the goal of providing evidence-based information about recommended storage conditions of formulations sorted by light- and temperature-related attributes as described for each product at licensure.ResultsWe report the prevalence of indications for light and temperature sensitivity in formulations categorized by their presentation type, number of doses, container type, dosage form and active molecule type. We also report the storage temperature range across formulations and diluents for reconstitution and dilution. Formulations with excipients that potentially facilitate light-induced and thermal degradation were also noted.ConclusionsThe result of our analysis indicates that light and temperature sensitivity are prevalent across therapeutic protein formulations. However, when a formulation is reconstituted or diluted, both light and temperature sensitivity are less clear. In addition, light and temperature sensitivity are more well defined in liquid formulations than lyophilized powder formulations, and more well defined in products manufactured in autoinjectors, prefilled-syringes, and pens than products in vials. Overall, our report provides a data-driven summary of storage conditions among therapeutic protein formulations to support the development of future biologic drug products.

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {365~ \text {n} \text {m} }}$ </tex-math></inline-formula> . The stress tests were carried out for a period of 8665 hours with forward currents between <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {350~ \text {m} \text {A} }}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {700~ \text {m} \text {A} }}$ </tex-math></inline-formula> and junction temperatures up to 132°C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 °C indicate a decrease in radiant flux between 10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {40~\%}}$ </tex-math></inline-formula> varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model’s lifetime predictions.

Long-term impact of light- and elevated temperature-induced degradation on photovoltaic arrays

Long-term impact of light- and elevated temperature-induced degradation on photovoltaic arrays

Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon

Light- and elevated temperature-induced degradation (LeTID) causes long-term instabilities, especially in passivated emitter and rear cells, leading to severe performance loss of commercial modules. Despite the hundreds of LeTID reports available in the literature, there is little consensus regarding the underlying defects and defect formation mechanism responsible for this degradation and its exact electronic properties. Recently, it has been shown that a form of carrier-induced degradation similar to that of LeTID is also observed in some high-purity silicon crystals grown by the float-zone method. In this work, using deep level transient spectroscopy and lifetime spectroscopy, we study the role of nitrogen on the degradation. Intentional contaminated samples with different and known level of nitrogen have been specially grown and characterized for this study. We detect the appearance of a set of majority carrier traps in the degraded state of the samples with activation energies 0.1 (H85), 0.43 (H270A), 0.39 (H270B), and 0.46 eV (H200) with respect to the valence band, from which H270A appears to correlate with the degradation. The results show that the extent of degradation in the nitrogen-rich samples is at least double that of the nitrogen-lean samples.

A general unified method for calculating fire resistance of CFST columns considering various types of steel and concrete

Due to the advantages of CFST structures, various types of steel (e.g., ordinary/high strength/stainless steel, etc.) and concrete (e.g., ordinary/high strength/ultra-high performance/recycled concrete, etc.) are used in them, and fire safety design is an indispensable part in the structural design of CFST. However, there is still a lack of a simple unified fire design method that can consider different materials and their combinations at the same time. Based on the unified calculation method of fire resistance of CFST based on average temperature proposed by the authors, this paper focuses on enhancing the generality and accuracy of the unified method, with specific attention paying to the prediction of material properties degradation effect and cross-sectional average temperature under fire. For the prediction of material properties degradation effect with considering various types of steel and concrete, two methods, namely the global equivalent method and the segmented equivalent method, are proposed to convert arbitrary temperature reduction factor models defined at material level to the corresponding equivalent models defined at CFST section level. After validating with various types of steel and concrete material properties reduction factor models given in the previous literature, it turns out that the equivalent models generated by the two methods can well approximate the temperature-induced degradation effect at CFST section level. As for the prediction of average temperature with considering various types of steel and concrete, an incremental calculation method to calculate the average temperature of steel tube and concrete core is proposed, which is compatible with various thermal property models for different types of steel and concrete without any intermediate conversion techniques. In the meantime, this incremental calculation method can be adopted for CFST members with or without protection and is also consistent with the temperature calculation formulas for steel structures given in Code. In conclusion, the improvements made in this paper can expand the application scope of the previously proposed unified method to various types of concrete materials and thus enhance the generality of the method.

Research progress of light and elevated temperature-induced degradation in silicon solar cells: A review

At present, passivated emitter and rear cell (PERC) solar cells dominate the photovoltaic industry. However, light and elevated temperature-induced degradation (LeTID) is an important issue responsible for the reduction of PERC efficiency, which may lead to up to 16% relative performance losses in multicrystalline silicon solar cells, and this degradation occurs in almost all types of silicon wafers. Even in next-generation silicon solar cells like Tunnelling oxide passivated contact (TOPCon) and Heterojunction with Intrinsic Thin-layer (HJT) solar cells, LeTID can still cause an efficiency loss up to 1% relative. LeTID is a long process in terms of time during the whole cycle of degradation and regeneration, which will seriously affect the conversion efficiency and stability of solar modules, and hence increase the cost of electricity generated by solar cells. Furthermore, after years of research on LeTID, researchers are yet to determine the specific cause of LeTID. In this paper, we refer to specific literature, briefly describe the development history of LeTID, introduce the phenomena of LeTID in crystalline silicon solar cells, and describe its characteristics. In addition, we also analyzed the fundamental causes of LeTID, and found that the cause may be related to metal impurities or hydrogen contained in solar cells. At present, in view of the participation of hydrogen in LeTID and other existing related theories, this paper introduces several methods to inhibit LeTID in crystalline silicon. Finally, the content of this paper is summarized, and the development of solar cells in the future is prospected.

Reaction Kinetics Analysis of Treatment Process on Light-Induced Degradation for p-Type Passivated Emitter and Rear Contact Solar Cell Module with Gallium Cz-Si Wafer

The light-induced degradation (LID) phenomenon in solar cells reduces power generation output. Previously, a method was developed to prevent LID where a group III impurity that can replace boron is added to the silicon wafer. However, in a subsequent study, performance degradation was observed in gallium-doped solar wafers and cells, and a degradation pattern similar to that occurring in light and elevated temperature-induced degradation (LeTID) was reported. In this study, a 72-cell module was fabricated using gallium-doped PERC cells, and the treatment of the LID process for carrier injection in the range of 1 to 7 A at 130 °C was analyzed using kinetic theory. We selectively heated only the solar cells inside a 72-cell module using a half-bridge resonance circuit for remote heating. To monitor the treatment of LID process in real time, a custom multimeter manufactured using an ACS758 current sensor and a microcomputer was used. Least-squares curve fitting was performed on the measured data using a reaction kinetics model. When the carrier-injection condition was applied to the gallium-doped PERC solar cell module at a temperature of 130 °C, the observed degradation and treatment pattern were similar to LeTID. We assumed that the treatment rate would increase as the size of the injected carrier increased; however, the 5 A condition exhibited the fastest treatment rate. It was deduced that the major factors of change in the overall treatment of the LID process vary depending on the rate of conversion from the LID state to the treatment state. In conclusion, it can be expected that the deterioration state of the gallium-doped solar cell module changes due to the treatment rate that varies depending on the carrier-injection conditions.

Crosslinkable and Chelatable Organic Ligand Enables Interfaces and Grains Collaborative Passivation for Efficient and Stable Perovskite Solar Cells.

The organic-inorganic halide perovskite solar cell (PerSC) is the state-of-the-art emerging photovoltaic technology. However, the environmental water/moisture and temperature-induced intrinsic degradation and phase transition of perovskite greatly retard the commercialization process. Herein, a dual-functional organic ligand, 4,7-bis((4-vinylbenzyl)oxy)-1,10-phenanthroline (namely, C1), with crosslinkable styrene side-chains and chelatable phenanthroline backbone, synthesized via a cost-effective Williamson reaction, is introduced for collaborative electrode interface and perovskite grain boundaries (GBs) engineering. C1 can chemically chelate with Sn4+ in the SnO2 electron transport layer and Pb2+ in the perovskite layer via coordination bonds, suppressing nonradiative recombination caused by traps/defects existing at the interface and GBs. Meanwhile, C1 enables in situ crosslinking via thermal-initiated polymerization to form a hydrophobic and stable polymer network, freezing perovskite morphology, and resisting moisture degradation. Consequently, through collaborative interface-grain engineering, the resulting PerSCs demonstrate high power conversion efficiency of 24.31% with excellent water/moisture and thermal stability. The findings provide new insights of collaborative interface-grain engineering via a crosslinkable and chelatable organic ligand for achieving efficient and stable PerSCs.

Investigating the degradation behaviours of n+-doped Poly-Si passivation layers: An outlook on long-term stability and accelerated recovery

In this article, we study the kinetics of firing-activated degradation and recovery of industrially processed n + -doped poly-Si on thin oxide passivation layers subjected to illuminated annealing at elevated temperatures. The impact of a comprehensive range of fast-firing conditions on the subsequent degradation and recovery were assessed. The results indicate that the recovery process is dependent on the peak firing temperature, where higher temperatures led to an improvement in effective lifetime of up to 20% compared to the pre-fired state, and a very low surface dark saturation current density of 2.9 fA/cm 2 . By cycling through light soaking and dark anneal conditions, we show that unlike the commonly studied boron-oxygen light-induced degradation (BO-LID) and light- and elevated temperature-induced degradation (LeTID), this newly observed instability in n + -doped poly-Si passivation layers is not reversible, that is, once a degradation/recovery cycle is completed, the lifetime remains very stable under subsequent light soaking. This indicates that the surface related instability may be able to be completely resolved following the completion of the first degradation/recovery cycle. With this in mind, we investigate the potential for high intensity laser illumination (up to 150 kW/m 2 ) to rapidly increase the recovery rates, however, this does not seem sufficient to cycle through degradation and recovery on a timescale that is amenable with mass production. The mitigation of any potential instabilities at the poly-Si interface has significant implications for the reliability of n-type tunneling oxide passivated contact (TOPCon) solar cells. • Firing conditions have a significant impact in stability of polysilicon passivation. • The firing-induced surface instability is different to previous degradation modes. • Cycling between degraded and recovered states does not occur.