Abstract Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact. The ZnO NRs exhibited a well-defined hexagonal structure with a lattice constant size of approximately 0.502 nm, as evidenced by characterization results. X-ray Photoelectron Spectroscopy (XPS) analysis revealed a reduction in defective oxygen content with increasing B ion doping.The current-voltage (I-V) characteristics of the Schottky contacts were systematically investigated over a temperature range of 160-300K. As the temperature increased, the barrier height exhibited an upward trend, while the ideality factor decreased. This behavior was ascribed to barrier inhomogeneity at the Schottky contact interface. Employing a single Gauss distribution function for barrier height, we verified and elucidated this phenomenon, contributing to a comprehensive understanding of the observed temperature-dependent electrical properties.
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