Temperature Dependence Of Recombination Lifetime Research Articles

Radiative recombination lifetime of excitons in thin quantum boxes

Exciton radiative recombination lifetime in a thin quantum box in the intermediate spatial dimension between the two-dimension and the zero-dimension is investigated by a theoretical analysis which rigorously treats the electron-hole Coulomb interaction. The higher exciton states as well as the ground exciton state are explicitly taken into account to estimate the temperature dependence of exciton recombination lifetime. We clarify how the temperature dependence of the recombination lifetime varies with a change in the quantum confinement dimension which can be controlled by the lateral width of a thin quantum box. We also discuss the effect of the exciton localization due to structural imperfection on the radiative recombination lifetime.

Determination of energy levels of recombination centers in low-doped Si layers by temperature dependence of recombination lifetime

The recombination lifetime dependence on temperature and injection level is largely due to the actual position of the recombination centers in the bandgap. However in the literature few data have been presented concerning the energy levels of the recombination centers in “good” low-doped silicon. In this paper an experimental evaluation of the energy position and the spatial distribution of the different recombination centers in low-doped N-type Si samples is made, from the temperature dependence of lifetime, by using a differential measurement technique. Results show that the energy levels of the most relevant recombination centers detected in such samples are far from being “deep”, but rather quite “shallow”, explaining the large variation on lifetime with temperature and injection found experimentally.

Recombination lifetime in a gold-doped p-type silicon crystal

The temperature dependence of the carrier recombination lifetime in a gold-doped p-type silicon is analysed on the basis of the Shockley-Read-Hall recombination theory. The analysis indicates that the temperature dependence of the recombination lifetime does not practically give an energy level of a recombination centre locating at an energy level deeper than about 0.35 eV from either the silicon conduction-band edge or the valence-band edge. The recombination lifetime in a gold-doped p-type silicon is measured at various temperatures using a microwave photoconductive decay method. The observed temperature dependence of the recombination lifetime indicates that the lifetime is controlled by the gold donor. However, the observed recombination lifetime is about one-eighth of the recombination lifetime calculated using the gold-donor concentration as determined by deep-level transient spectroscopy. Some causes for this discrepancy are discussed.

Temperature Dependent Recombination Lifetime in Silicon: Influence of Trap Level

ABSTRACTThis paper discusses the temperature dependence of recombination lifetime in a variety of silicon materials using energy level as a parameter. A theoretical approach based on the Shockley-Read-Hall theory for energy level calculations has been used. Various types of defects created by introducing impurities, dislocations and grain boundaries into silicon waferswere studied. Results are presented for Czochralski grown Si wafers intentionally contaminated with gold and chromium, EFG ribbon with varying concentration of oxygen, web ribbons with extended defects and contaminants, large grain polycrystalline material, and Si/Si-Ge/Si heterostructures with varying misfit and threading dislocation density.