Temperature Dependence Of Gating Research Articles

Temperature dependence of gate and substrate currents in the CHE crossover regime

This paper presents new experimental data on the bias and temperature dependence of gate (I/sub G/) and substrate (I/sub B/) currents in submicrometer n-MOSFET's at drain voltages much smaller than the Si-SiO/sub 2/ energy barrier (V/sub DS//spl Lt//spl Phi//sub B//q/spl sime/3.15 V). In particular, we report simultaneous measurements of I/sub G/ and I/sub B/ in that part of the bias range conventionally defined "channel hot electron" regime (CHE) where I/sub B/ decreases for decreasing temperature (substrate current crossover regime). It is found that, at low V/sub DS/, the two currents exhibit an opposite temperature dependence, unexplained by present models.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>