Temperature Coefficient Of Frequency Research Articles

Design and Analysis of Mode-Matched Decoupled Mass MEMS Gyroscope with Improved Thermal Stability

Abstract This paper presents an efficient design approach for microelectromechanical systems (MEMS) gyroscope considering the design constraint of MEMSCAP's Silicon-on-Insulator Multi-User MEMS Processes (SOIMUMPs). A design for a decoupled mass MEMS resonant gyroscope with tuning electrodes is presented to minimize cross-axis coupling and optimize the gyroscope's performance. The device features a size of 1.8 ×2.772 mm^2. A decoupled mass MEMS gyroscope has been designed using a novel mechanical beam configuration that optimizes the structural design to reduce unwanted interactions between drive and sense axes motions. Mode order has been achieved by obtaining the first two modes as drive and sense modes at 9946.3 Hz and 10202.7 Hz, respectively. Parallel plate electrostatic tuning electrodes have been added to adjust and match the drive and sense modes at the resonant frequencies of 9946 Hz. This mode matching is crucial for optimizing gyroscope performance, accuracy, and sensitivity. The effects of temperature variation on the performance of the designed decoupled mass MEMS gyroscope have been investigated, particularly in terms of its mode-matched operation achieved using tuning electrodes. Finite Element Method (FEM) simulations were conducted, demonstrating that thermal stability was achieved, and mode-matched operation was maintained within the temperature range of -40 ºC to 80 ºC. The gyroscope exhibits enhanced performance compared to existing MEMS gyroscopes under mode-matched conditions, featuring a lower temperature coefficient of frequency (TCF) at 0.0415 Hz/ºC in the drive mode and 0.0165 Hz/ºC in the sense mode. FEM analysis for the fabrication process tolerances has been done, where MEMS gyroscope’s resonant frequencies, output capacitance, output displacement, and sense mode quality factor have shown negligible changes to fabrication process tolerances. Transient analysis was conducted using CoventorWare MEMS+ 3D schematic, which was integrated with MATLAB Simulink to measure the MEMS gyroscope’s output response, which corresponded with the varying input angular velocity signal.

Processing strategy and composite regulation on dielectric performance in Li2O–Al2O3–B2O3 dielectric systems using SrTiO3

AbstractIn this paper, we investigated the effect of processing parameters and composite regulation on the structure and property relationship of lightweight low‐permittivity Li2O–Al2O3–B2O3 dielectric system. Li2BAlO4 ceramic and (1 − x)Li2BAlO4–xSrTiO3 ceramics were synthesized using a conventional solid‐state reaction method. Thermodynamic analysis, sintering temperature, phase formation, crystal structure, and microwave dielectric properties were investigated. Thermal analysis revealed a melting temperature of 847°C, suggesting a comparatively low temperature for the sintering of Li2BAlO4 ceramics. Li2BAlO4 crystalized into a monoclinic structure with P21/c space group, with [Al2B2O8] rings connected by [BO3] triangles and [AlO4] tetrahedra through Al–O–Al bridges. Dense Li2BAlO4 ceramics with a relative density of ∼97.7% were sintered at 750°C and had optimal microwave dielectric properties with relative permittivity (εr) of 5.13, quality factor (Q × f) of 22 610 GHz, and the temperature coefficient of resonance frequency (τf) of −112.5 ppm/°C. The 0.88Li2BAlO4–0.12SrTiO3 composite ceramic has excellent microwave dielectric properties with εr = 8.83, Q × f = 14 000 GHz, τf = 4.6 ppm/°C. The ceramics also demonstrated an inert behavior with silver electrodes proving its application in low‐temperature cofired ceramic (LTCC) technology.

Strontium tantalate ceramics for dielectric resonator and antenna applications

Bulk SrTa2O6 ceramics were produced via solid-state reactive sintering, characterized by x-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy, and their dielectric properties determined via resonant cavity in the 5G frequency domain. Two polymorphs were obtained. Orthogonal β phase ceramics, obtaining much lower relative densities, achieved, at ∼5 GHz, an effective permittivity (εeff) of ∼22, dielectric losses (tanδ) around 1 × 10−2 and temperature coefficient of resonant frequency (τf) of around 250 ppm/°. Tetragonal tungsten bronze β’ phase ceramics achieved relative densities of ∼87%, and at ∼2.8 GHz a higher εeff between 79-85, lower ‘tanδ’ around 5 × 10−3, and a ‘τf’ of about 300 ppm/° at 90°C. Both phases are found to be Sr-deficient, which may have caused a liquid-phase sintering in the powder bed configuration used for these ceramics. The performance of a prototype dielectric resonator antenna incorporating a β’ ceramic was demonstrated to validate the measured dielectric properties.

Influence of TiO2 addition on the Mg4Nb2O9 ceramic phase and its application in the radiofrequency region

In this work, the dielectric properties of (1-x) Mg4Nb2O9 – (x) TiO2 composite ceramics in radiofrequency and the microwave region were evaluated. X-ray diffraction demonstrated that Mg4Nb2O9 (MNO) reacted with TiO2 resulting in the formation of new crystalline phase Mg5(Nb0.625Ti0.375)4O15. Complex Impedance Spectroscopy (CIS) analysis was realized to analysis the electrical properties of materials, whereas was observed that activation energy (Ea) decrease from 1.64 to 1.37 eV with an increase in TiO2 concentration. Temperature capacitance coefficient (TCC) was obtained and showed that at different frequencies all materials could be used as Class 1 ceramic capacitors according to EIA RS-198. In the Microwave region, MNO – TiO2 demonstrated ε’r between 12.07 (MNO) and 14.08 (MNO18T), tan δ values varying of 2.64 × 10-4 (MNO) up to 5.92 × 10−4 (MNOT14). Regarding the temperature coefficient of resonant frequency (τf) was observed that the values decreased with the increase in TiO2, with the value closest to zero being that of pure MNO (τf = −27 ppm.°C−1). The results presented show that materials evaluated could be utilized in devices that can be act in radio frequency (RF) and microwave (MW) regions.

On the τf measurement of microwave dielectric ceramics

As a key parameter of microwave dielectric ceramics, the temperature coefficient of resonant frequency (τf) determines the temperature stability of microwave dielectric ceramics and relevant microwave devices. The τf of a microwave dielectric ceramic is typically calculated from the measured resonant frequencies of the system, consisting of the ceramic sample plus other dielectric elements, at two temperatures ∼60 – 70°C apart. This measurement process assumes that τf is a constant; however, it is generally temperature-dependent based on both theoretical and experimental results. Furthermore, the as-measured τf is actually the τf of the dielectric resonator system, which is different from that of the sample itself. In this paper, these two overlooked problems during τf measurement are discussed in detail, and suggestions are given to avoid their possible misleading consequences and thus ensure the reliability of τf measurements.

Geometrically engineered mass sensing CMOS-MEMS resonators for temperature compensation via folded anchors

We present, for the first time, a single-layer plate resonator with specific folded anchors capable of reducing the temperature coefficient of frequency (TCF) by two orders of magnitude compared to straight beams. Folded anchors provide differential strain through either compressive or tensile thermal stress depending on the anchor design and, in turn, allow for positive and negative temperature-induced frequency change components. With a nominal 2 MHz frequency, we experimentally report a frequency shift of 2500 ppm over a temperature span from 0ºC to 90ºC using an optimal anchor folding aspect ratio. The frequency-temperature curve exhibits a turnover point at 27ºC granting a unique opportunity to, in a future application, complement this passive strategy with an active micro-oven for negligible TCF. The proposed approach main advantage relies on its mechanical design-level implementation exploiting a geometrical engineering strategy than can be directly extended to other topologies. This technique reveals as particularly suited for ultra-sensitive mass sensing applications based on microelectromechanical systems (MEMS) resonators where single-layer resonators are optimal thanks to their minimum footprint, attaining minimum mass structures. Results demonstrate that adoption of the proposed folded anchors strategy decreases effectively the thermally induced frequency fluctuations within the system intrinsic noise level.

Electrical actuation of single-crystal diamond MEMS resonators at high temperatures

Achieving efficient low-voltage actuation of microelectromechanical system (MEMS) resonators in high-temperature environments poses a difficult topic due to the thermal interference and the risk of high-temperature failure. In this work, the single-crystal diamond (SCD) resonators fabricated through the ion implantation-assisted lift-off (IAL) technique exhibit a SCD-on-SCD cantilever structure. We propose an electrical actuation system based on the electrostatic effect specifically designed for SCD MEMS resonators with a low radio-frequency amplitude of ∼ 100 mV. The SCD resonators demonstrate stable and efficient actuation across a wide temperature range, from room temperature to 500 °C. Importantly, the actuation voltage exhibits little impact on the resonance frequency and the Q factor of the resonator. The SCD resonator showcases exceptional thermal stability in resonance frequency, with a low temperature coefficient of frequency (TCF) below −12 ppm/°C up to 500 °C. The developed actuation scheme holds tremendous potential as a robust platform for realizing SCD MEMS devices, particularly in applications requiring high integration at high temperatures.

Study on the Fabrication and Acoustic Properties of Near-Stoichiometric Lithium Tantalate Crystal Surface Acoustic Wave Filters

Near-stoichiometric lithium tantalate (NSLT) wafers with different Li contents were prepared by vapour transfer equilibrium (VTE) method and fabricated into surface acoustic wave filters. The temperature coefficient of frequency, insertion loss, and bandwidth of the surface acoustic wave filters were tested using a special chip test bench and a network analyzer. The results show that the temperature coefficient of frequency shows a trend of first decreasing and then increasing with the increase in Li content, and the temperature stability of the surface acoustic wave filters is best when the Li content is 49.75%. It is also found that the surface acoustic wave filter fabricated from NSLT wafers has 21.18% lower temperature coefficient of frequency, 7.3% lower insertion loss, and 2.8% lower bandwidth than those fabricated from congruent lithium tantalate wafers. Therefore, NSLT crystals are more suitable for applications in acoustic devices, providing a new idea for performance enhancement of 5G communication devices.

Wireless Temperature Measurement for Curved Surfaces Based on AlN Surface Acoustic Wave Resonators.

In this paper, we propose a novel method for temperature measurement using surface acoustic wave (SAW) temperature sensors on curved or irregular surfaces. We integrate SAW resonators onto flexible printed circuit boards (FPCBs) to ensure better conformity of the temperature sensor with the surface of the object under test. Compared to traditional rigid PCBs, FPCBs offer greater dynamic flexibility, lighter weight, and thinner thickness, which make them an ideal choice for making SAW devices working for temperature measurements under curved surfaces. We design a temperature sensor array consisting of three devices with different operating frequencies to measure the temperature at multiple points on the surface of the object. To distinguish between different target points in the sensor array, each sensor operates at a different frequency, and the operating frequency bands do not overlap. This differentiation is achieved using Frequency Division Multiple Access (FDMA) technology. Experimental results indicate that the frequency temperature coefficients of these sensors are -30.248 ppm/°C, -30.195 ppm/°C, and -30.115 ppm/°C, respectively. In addition, the sensor array enables wireless communication via antenna and transceiver circuits. This innovation heralds enhanced adaptability and applicability for SAW temperature sensor applications.

Design and Characterization of Surface Acoustic Wave-Based Wireless and Passive Temperature Sensing System.

The surface acoustic wave (SAW) temperature sensor has received significant attention due to its wirelessly powered, battery-free, and chipless capabilities. This paper proposes a wireless sensing system comprising a one-port SAW resonator, helix antenna, and transceiver circuit. The SAW resonator used in this system is based on aluminum nitride (AlN) thin film, which exhibits high velocity and excellent piezoelectric properties. Simulations and experiments were conducted to investigate the performance of the designed SAW resonator. A helix antenna was also designed using finite element simulation to facilitate signal transmission between the SAW temperature sensor and the transceiver. An impedance-matching network was introduced between the helix antenna and the SAW resonator to optimize signal transmission. When the wireless SAW temperature sensor was placed within a certain distance of the mother antenna, the reflection peak of the SAW resonator was observed in the spectrum of the return signal. The frequency of the echo signal increased almost linearly as the temperature increased during the temperature tests. The fitted temperature coefficient of frequency (TCF) was -31.34 ppm/°C, indicating that the wireless temperature sensing system has high-temperature sensitivity.

Zero-Temperature Coefficient of Resonant Frequency in [(Mg0.6Zn0.4)0.95Co0.05]1.02TiO3.02-Ca0.6(La0.9Y0.1)0.2667TiO3 Ultra-Low-Loss Composite Dielectrics

Investigating the microwave dielectric properties of ceramics prepared through the conventional solid-state route, such as x[(Mg0.6Zn0.4)0.95Co0.05]1.02TiO3.02-(1−x)Ca0.6(La0.9Y0.1)0.2667TiO3, reveals notable characteristics. [(Mg0.6Zn0.4)0.95Co0.05]1.02TiO3.02 shows a permittivity (εr) of approximately 20, a high quality factor (Q × f) ranging between 250,000 and 560,000 GHz, and a temperature coefficient of resonant frequency (τf) of approximately −65 ppm/°C. To enhance the temperature stability, Ca0.6(La0.9Y0.1)0.2667TiO3 featuring a τf value of +374 ppm/°C was incorporated into the [(Mg0.6Zn0.4)0.95Co0.05]1.02TiO3.02 composition. τf demonstrated an increase with rising Ca0.6(La0.9Y0.1)0.2667TiO3 content, reaching zero at x = 0.95. A ceramic composition of 0.95[(Mg0.6Zn0.4)0.95Co0.05]1.02TiO3.02-0.05Ca0.6(La0.9Y0.1)0.2667TiO3, incorporating 3wt.% BaCu(B2O5) as sintering aids, exhibited outstanding microwave dielectric properties: εr~22.5, Q × f~195,000 (at 9 GHz), and τf~0.1ppm/°C, with a sintering temperature at 950 °C. This material is proposed as a prospective candidate for 6G band components and GPS antennas.

A novel low loss rare-earth germanate La4GeO8 microwave dielectric ceramic with orthorhombic structure

This study delves into the synthesis and characterization of rare earth germanate La4GeO8 ceramics, employing the solid-phase reaction method, with a focus on their microwave dielectric properties and crystallographic characteristics. The research employs X-ray diffraction (XRD) and transmission electron microscopy (TEM) to ascertain the orthorhombic crystal structure within the Pnma space group. Rietveld refinement analysis precisely determines the lattice constants (a = 18.3006 Å, b = 7.6697 Å, c = 5.8513 Å) and unit cell volume (V = 821.28429 Å3). Raman spectroscopy provides insights into the correlation between the quality factor (Q × f) and the Full Width at Half Maximum (FWHM) of the Ag(O) mode at 733 cm⁻1. A notable highlight of the study is the exceptional microwave dielectric performance of La4GeO8 ceramic sintered at 1540 °C, characterized by a relative dielectric constant (εr) of 13.24, a Q × f product of 47,826 GHz at 10.16 GHz, and a temperature coefficient of frequency (τf) of −82.3 ppm/°C. This comprehensive investigation offers valuable insights into the structural and microwave dielectric properties of AB-type rare earth germanate La4GeO8 ceramics, underscoring their potential in advanced dielectric material applications.

Bond theory, vibrational spectroscopy, and dielectric responses of trirutile ATa2O6 (A = Mg, Ni) microwave ceramics

This study established the connection between structure and dielectric responses by synergistically evaluating the chemical bond characteristics and lattice vibrational spectroscopies of trirutile ATa2O6 (A = Mg, Ni) microwave ceramics. The MgTa2O6 ceramic exhibits a uniform grain size distribution and a dense microstructure, with dielectric characteristics at microwave range of a εr value of 27.27, a high Q×f value of 109,203 GHz (8.73 GHz), and a τf of approximately 53.38 ppm/°C when sintered at 1300 °C, while the NiTa2O6 ceramic presents a smaller average grain size and minor micropores, with dielectric characteristics at microwave range of εr = 24.58, Q×f = 27,610 GHz (9.25 GHz), and τf = 33.94 ppm/°C, sintered at 1250 °C. The structural refinement and atomic arrangements confirm a trirutile structure along the [001], [100], and [3 3‾1‾] zone axes. Ta–O bonds are found to contribute the most to the ionic character of a bond, bond susceptibility, lattice stability, thermal expansion behaviors, and strength of bonding ability, indicating their significant influence on dielectric polarization, lattice stability, and temperature coefficient of resonant frequency. Raman scattering spectra analysis reveals that the A1g mode near 700 cm−1 mainly controls the Raman vibrational behaviors. The theoretical dielectric properties calculated from the infrared spectrum and dielectric properties analysis consistent with the measured dielectric performances, suggesting that the dielectric characteristics at the microwave range are mainly determined by the oscillatory absorption of structural phonons, with the first two modes at 210.48 cm−1 and 232.87 cm−1 contributing 72.02% to the εr value and 90.45% to the tanδ value, respectively.

Effect of raw material pretreatment and ionic radius on the preparation and microwave dielectric properties of Re2TiO5 ceramics

The present study focuses on the synthesis and characterization of rare-earth titanates, specifically Re2TiO5 (ReLa, Nd, Sm), with a particular emphasis on their microwave dielectric properties. The factors influencing the synthesis of La2TiO5 compound through the traditional solid-state method were thoroughly investigated, with a significant finding being the notable impact of moisture absorption in La2O3. The impact of variations in rare-earth cation radii on the structure and dielectric properties was systematically analyzed. Re2TiO5 (ReLa, Nd, Sm) ceramics crystallized into an orthorhombic structure with space group Pnam, which was confirmed through Rietveld refinement. The resulting materials demonstrated exceptional microwave dielectric properties characterized by a low permittivity range of 13.72–17.39, high-quality factors ranging from 8331 to 17,795 GHz, and a significantly reduced temperature coefficient of resonance frequency (−33.2∼-12.6 ppm/°C). The correlation between microwave dielectric properties and structural characteristics (including ionic polarizability, packing fraction, and bond valence) was investigated. The exceptional potential of these rare-earth titanates lies in their ability to meet the stringent requirements for low signal transmission delay in wireless communication systems, owing to their advantageous low permittivity within the microwave frequency spectrum.

Phase evolution and enhanced Q×f in BaSi2O5 ceramics with Co2O3 substitution

According to the chemical formula Ba1-xCoxSi2O5, low permittivity ceramics were prepared using BaCO3, Co2O3 and SiO2. Orthorhombic structured BaSi2O5 limited solid solution was obtained at x≤0.1. It coexisted with BaCo2Si2O7 and SiO2 in the range of 0.3≤x≤0.5. While x=0.7, the three-phase equilibrium was destroyed, accompanied by BaSi2O5 vanishing. At x=1, all Si existed in the form of Co2SiO4 and SiO2. Co2O3 melting decreased the sintering temperature from 1200 °C to 1025 °C. Because of the dielectric polarizability decrease, Co introduction brought in low dielectric constant εr. Notably, the quality factor Q×f was boosted to 60,340 GHz, which was almost 4 times than the original (∼16,526 GHz). This occurred because the intrinsic loss and extrinsic loss were significantly reduced by the average bond covalence increase and SiO2 generation (Q×f∼80,400 GHz), respectively. The variation of resonant frequency temperature coefficient τf was explained from the view of the change in the bond valence of oxygen. When x=0.5, the system with a high relative density of 98.63% exhibited superior microwave dielectric properties: εr=6.77, Q×f=60,340 GHz, and τf=-47.11 ppm/°C.

Microwave dielectric properties of (Na0.5Bi0.5)MoO4–BaMoO4 composite ceramics with ultralow sintering temperature

AbstractThe rapidly ever‐growing wireless communication demands development of low loss, ultralow sintering temperature dielectric ceramics with excellent microwave properties. In this work, fabrication and properties of novel microwave dielectric composite ceramics (1 − x)(Na0.5Bi0.5)MoO4–xBaMoO4 (x = 0.3–0.6), in short as ((1 − x)NBM–xBM), synthesized via solid‐state reaction method with an ultralow sintering temperature is reported. X‐ray diffraction analysis confirms the coexistence of both (Na0.5Bi0.5)MoO4 and BaMoO4 scheelite phases. Scanning electron microscopy analysis demonstrated dense microstructures of ceramics sintered at 650°C and 700°C. The dielectric properties of (1 − x)NBM–xBM (x = 0.3–0.6) ceramic are significantly tailored by incorporation of BaMoO4. With the increase in x from 0.3 to 0.6, the (1 − x)(Na0.5Bi0.5)MoO4–xBaMoO4 displays noticeable change in microwave permittivity (varying from 25.4 to 16.6), quality factor values, and temperature coefficient of frequency (range tunable from +37.6 ppm/°C to −14.2 ppm/°C). The microwave dielectric ceramic, 0.5(Na0.5Bi0.5)MoO4–0.5BaMoO4, has optimum dielectric properties (, = 15 164 GHz, τf = −0.2 ppm/°C) at sintering temperature of 650°C. The dielectric resonator antenna designed using (1 − x)(Na0.5Bi0.5)MoO4–xBaMoO4 ceramics demonstrated excellent radiation performance at resonance frequency of 5.905 GHz, gain of ∼5.8 dBi and 140 MHz bandwidth, which validates its microwave applications utilization within the field of ultralow temperature cofired ceramics technology.

Synthesis, microstructure, and dielectric properties of novel dual-phase high-entropy (Ba0.2Ca0.2Sr0.2Na0.2Bi0.2)WO4 ceramics for LTCC applications

Novel dual-phase high-entropy (Ba0.2Sr0.2Ca0.2Na0.2Bi0.2)WO4 ceramics were designed to reduce the sintering temperature and optimize the frequencytemperature coefficients of scheelite-type AWO4 ceramics. XRD and Rietveld refinement analyses revealed that the ceramic contained dual phases of BaWO4 and Na0.5Bi0.5WO4. The phases had a tetragonal structure with the I41/a space group, as verified by TEM. With increasing sintering temperature, the ɛr exhibited a decreasing trend owing to the combined influence of ionic polarizability and density. In addition, the variation trend of the Q × f value was similar to that of the density, and its intrinsic influence was investigated by analyzing the FWHM of the Raman vibrational peak. The τf was well optimized and exhibited a variation trend similar to those of the lattice distortion and microstrain. Finally, the (Ba0.2Sr0.2Ca0.2Na0.2Bi0.2)WO4 sintered at 950 °C had the outstanding properties: ɛr of 13.8, Q×f of 33,110 GHz and τf of −34 ppm/°C at 9 GHz.

Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si†

GHz operating single port SAW resonators have been manufactured on Sc0.3Al0.7N/Si substrate. The thickness of the ScAlN thin layer was 0.8 μm. Advanced nano‐lithographic techniques have been developed for devices manufacturing. Rayleigh and Sezawa modes have been evidenced on Sc0.3Al0.7N/Si structure. The targeted applications are temperature sensors for harsh environmental operations. The sensitivity and temperature coefficient of frequency (TCF) of the manufactured devices have been experimentally determined and analyzed. The mode shapes of the resonances that appear in the devices supported on Sc0.3Al0.7N/Si substrate were evidenced by finite element method (FEM) simulations. A technique that combines FEM with Coupling of Modes (COM) was used for the determination of the resonance frequencies. Simulations performed for the temperature dependence of the resonance frequency led to results close to the experimental ones for the Rayleigh mode as well as for the Sezawa mode for devices supported on Sc0.3Al0.7N/Si substrate. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.

Design and implementation of a temperature-insensitive heterogeneous resonant magnetic field sensor

A heterogeneous resonant magnetic field sensor is developed by using a FeGa plate, a quartz crystal double-ended tuning fork (DETF) resonator and a sapphire crystal plate. The double ends of the DETF are bonded to the ends of the magnetostrictive FeGa thin plate through two spacers, forming a resonant magnetic sensitive element. The C-cut sapphire crystal plate as a temperature compensation layer is bonded to the bottom of the magnetic sensitive element. When the temperature fluctuates, the bending deformation caused by the heterogeneous sensitive structure eliminates the thermal stress caused by the thermal expansion effect, thereby reducing the temperature drift of the sensor. The impact of different thicknesses of the sapphire substrate on reducing temperature drift in the sensor is analysed through theoretical calculation and finite element simulation. A sensor prototype was fabricated with a sapphire substrate thickness of 0.45 mm. The experimental results demonstrate that the temperature coefficient of frequency (TCF) of the sensor is reduced from 8.73 Hz/°C to 0.47 Hz/°C in the 0 °C to 60 °C range, and the sensitivity and resolution in the linear region of the sensor are 5.63 Hz/Oe and 42μOe (4.2nT), respectively.

Dielectric properties of La2MoO6 ceramics at microwave frequency for application in wireless sensors

The microwave dielectric properties of La2MoO6 ceramics were investigated in preparation for their application in mobile communication. La2MoO6 ceramics were prepared by the conventional solid-state method under varied sintering conditions. The X-ray diffraction peaks of La2MoO6 ceramic did not vary significantly with sintering conditions. The average grain size of La2MoO6 ceramics increased with increasing the sintering temperature and duration. The maximum density of 5.67 g/cm3, the dielectric constant ( ε r ) of 14.1, the quality factor (Q × f) of 68,000 GHz, and the temperature coefficient of resonant frequency ( τ f ) of −56 ppm/°C had been attained when La2MoO6 ceramics that sintered at 1300 °C for 4h.