Telecommunication Wavelengths Research Articles

Scanning Near-Field Optical Microscopy: Recent Advances in Disordered and Correlated Disordered Photonics

Disordered and correlated disordered photonic materials have emerged in the past few decades and have been rapidly proposed as a complementary alternative to ordered photonics. These materials have thrived in the field of photonics, revealing the considerable impact of disorder with and without structural correlations on the scattering, transport, and localization of light in matter. Scanning near-field optical microscopy (SNOM) has proven to be a fundamental tool for the study of the interaction between light and matter at the nanoscale in such systems, allowing for the investigation of optical properties and local electromagnetic fields with extremely high spatial resolution, surpassing the diffraction limit of conventional optical microscopy. In this review, the most important and recent advances obtained for disordered and correlated disordered luminescent structures by means of the aperture SNOM technique are addressed, showing how it allows the tailoring of local density of states (LDOS), as well as providing access to statistical analysis for multi-resonance disordered and hyperuniform disordered structures at telecom wavelengths.

Integrated photon pairs source in silicon carbide based on micro-ring resonators for quantum storage at telecom wavelengths

We present the design of an on-chip integrated photon pair source based on Spontaneous Four Wave Mixing (SFWM), implemented on a ring resonator in the 4H Silicon Carbide On Insulator (4H-SiCOI) platform, compatible with a solid state quantum memory in the telecommunications band. Through careful engineering of the waveguide dispersion and micro-ring resonator dimensions, we found solutions where the signal photons are emitted at 1536.48 nm with a bandwidth of ∼150\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim 150$$\\end{document} MHz, enabling the interaction with the hyperfine structure of Er3+\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^{3+}$$\\end{document} ions. Simultaneously, the idler photons are generated at 1563.86 nm, matching the central wavelength of a specific channel in a commercial dense wavelength division multiplexing system. The proposed device fulfill all the spectral requirements in a simple ring-bus coupled waveguide configuration with design parameters within the range of reported values for similar resonators, making feasible its manufacturing with current fabrication capabilities.

Fast topological pumps via quantum metric engineering on photonic chips.

Topological pumps have garnered substantial attention in physics. However, the requirement for slow evolution speed to satisfy adiabaticity greatly restricts their application in on-chip devices. Here, we discover a direct link between adiabaticity and quantum metric, the real part of quantum geometry that has been relatively less explored compared to its imaginary counterpart, the Berry curvature. We demonstrate that the evolution speed of topological pumps between nontrivial edge states can be increased by reducing the quantum metric via introduction of long-range coupling to the celebrated Rice-Mele model. This fast topological pump can occur without affecting the bulk state evolution, which challenges the common understanding. We experimentally confirm our findings by using a platform consisting of bilayer integrated silicon waveguides operating at telecommunication wavelengths. Our work provides possibilities for lifting topological pumps from the constraints of slow evolution and paves the way toward compact photonic integration.

Topological Laser in Anomalous Quadrupole Topological Phases

AbstractTopological photonics shows considerable promise in revolutionizing photonic devices through the use of topological phases, leading to innovations like topological lasers that enhance light control. One of the recent breakthroughs is reducing the size of these systems by utilizing lower‐dimensional boundary states, notably via higher‐order topological phases. This paper presents the experimental demonstration of a topological laser in an anomalous quadrupole topological phase, an instance of higher‐order phases. To facilitate this, a topological nanocavity with a quality factor near 6000 is engineered through a twisting operation. The topological nature of this system is validated by the calculation of nested Wannier centers and the emergency condition of corner states. The experimental observations reveal the manifestation of corner states and the achievement of single‐mode pulsed laser, driven by an optical gain from multiple quantum wells at telecommunication wavelengths and a temperature of 4 K. A lasing threshold of 23 µW and a cold quality factor of 1500 are deduced through rate equation. This work gives a new potential in the application of topological principles to advance nanophotonic technologies.

Avoiding lateral mode leakage in thin film lithium niobate waveguides for the generation of spectrally pure photons at telecom wavelengths

Photonic integrated optical components, notably straight waveguides, serve as pivotal elements for on-chip generation and manipulation of quantum states of light. In this work, we focus on optimizing waveguides based on lithium niobate on insulator (LNOI) to generate photon pairs at telecom wavelengths using spontaneous parametric down-conversion (SPDC). Specifically, we investigate lateral leakage for all possible SPDC processes involving type 0, type I, and type II phase matching conditions in an X-cut lithium niobate waveguide and provide a recipe to avoid leakage loss for the interacting photons. Furthermore, focusing on type II phase matching, we engineer the waveguide in the single-mode regime such that it also satisfies group index matching for generating spectrally pure single photons with high purity (99.33%). We also address fabrication imperfections of the optimized design and find that the spectral purity of the generated photons is robust to fabrication errors. This work offers guidance for the suitable selection of morphological parameters to obtain lossless, single-mode LNOI waveguides for building linear optical circuits and photon pair generation at telecom wavelengths using desired phase-matching conditions.

Multiphoton-initiated laser writing of semiconductors using nanosecond mid-infrared pulses

The advent of more powerful mid-infrared nanosecond laser sources allows using them as attractive tools in material laser processing. For semiconductor bulk processing, laser intensities must remain modest to avoid detrimental nonlinear propagation and pre-focal plasma screening effects. Accordingly, nanosecond pulses are usually appropriate to locally initiate energy deposition by multiphoton absorption and subsequent modification, hardly achievable with ultrashort pulses. Employing a 2.8-μm 2.5-ns laser source, we explore the possibility to modify silicon and other semiconductors. With interactions initiated by three-photon absorption, we modify and determine the surface and bulk modification thresholds of Si, GaAs, and InP. For Si, compared to previous studies at telecom wavelengths, we report on a reduction of the energy threshold for volume modification with processing depth, and repeatable rear-surface modifications. Compared to Si, we find for GaAs and InP important fluctuations in the modification responses, which we attribute to an absorption mechanism initially triggered by a greater presence of defects. We also study germanium, as this narrower bandgap semiconductor very interesting for mid-infrared electro-optical applications is transparent at the newly introduced wavelength. Despite the ability to modify the surface, the bulk of Ge remains inaccessible in this two-photon regime, mainly attributed to beam aberrations and nonlinearities. Nonetheless, we demonstrate the ability to process Si chips integrating Ge layers. All these results showcase the potential of mid-infrared wavelengths to offer new degrees of flexibility for 3D laser processing technologies turned to silicon photonics and microelectronics packaging.

Efficient Poling‐Free Wavelength Conversion in Thin Film Lithium Niobate Harnessing Bound States in the Continuum

AbstractOver the past two decades, there has been a surge of interest in photonic integrated circuits (PICs) to enable low‐cost industrial mass manufacture of miniaturized optical systems while simultaneously improving performance and energy efficiency following the trajectory of electronics and large‐scale integration. An essential characteristic of any PIC lies in the ability of waveguides to efficiently confine light. The phenomenon of bound states in the continuum (BIC) shows promise in achieving confinement of light for modes that otherwise would suffer from high leakage losses, which can occur in many PIC platforms. In this contribution, the usefulness of operating near a BIC to achieve efficient second harmonic generation of ≈300% W−1 cm−2 in Silicon Nitride (SiN) loaded lithium niobate on insulator (LNOI) waveguides without needing to either pole or etch the lithium niobate is experimentally demonstrated. The guided fundamental mode is phase matched at the telecom wavelength to a higher order mode at the second harmonic wavelength that is engineered as a bound state in the continuum to mitigate leakage losses. This demonstrates the promise of using BIC in weakly confining waveguides for nonlinear optical applications all while avoiding the poling process by engineering waveguide geometry.

P-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors.

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on-off ratios of close to 103 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.

A Full‐Scale Analysis of Absorption Edges in Dye‐Doped Nonlinear Optical Polymers

AbstractA full‐scale analysis of the absorption edges by modified Tauc‐Lorentz models is essential in determining the optical bandgap and Urbach energy of semiconductors, transparent conductors, ionic compounds, and dielectric materials. This technique has not yet been applied to analyzing organic nonlinear optical (NLO) materials. This problem is tackled by preparing high‐quality films of guest–host NLO polymers with a wide thickness range from sub‐micron to 200 microns, allowing accurate measurement of full‐spectral absorption coefficients of NLO materials over four orders of magnitude by the UV‐VIS‐NIR spectroscopy. The Tauc model and a new Monolog–Lorentz model are used to study the optical absorption edge of guest‐host NLO polymers containing various push‐pull chromophores and the dependence of optical bandgap and Urbach edge on the structure and composition of materials is analyzed. The results reveal the critical transition of the Urbach exponential tail to a low energy tail that overlaps with vibrational overtones of materials at the telecom wavelengths. Determining the fundamental absorption region of organic NLO films in this study provides quantitative insight into the research to harness the resonance‐enhanced nonlinear coefficients of materials by operating at the wavelengths near the band edge with the control of optical loss.

Computation of the near-infrared electro-absorption in GeSn/SiGeSn step quantum wells

In this study, we propose a theoretical simulation of the type-I step quantum well obtained from GeSn/SiGeSn to scan a wide range of telecommunication wavelengths and obtain near-infrared optical modulators. At T = 300 K, the band discontinuities and energy gap between stretched Ge1−xSnx and relaxed Si0.1Ge0.9−ySny due to the acquisition of the heterostructure were calculated.Then, optimization of this heterostructure based on (Si) GeSn was performed using the solid theory model to balance out the composition y of Si0.1Ge0.9-ySny relaxed and thickness of Ge0.91Sn0.09 QWs. The eigenenergies and their related wavefunctions are computed by solving the Schrödinger equation using the finite difference method under the framework of the effective mass approximation. Depending on the y concentration, the energy levels of the electron and the heavy hole, the change of transition energies and oscillator strength were examined for different well widths. Additionally, the absorption coefficient with y concentration and structure parameters were examined.From the findings obtained, it was determined that this material group is very important to obtain high efficiency from electro-absorption modulators covering the 1.55 μm wavelength range.

Rational design of efficient defect-based quantum emitters

Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here, we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency.

Coherent Broadband Spectrum Generation in Rectangular Silicon Core Buried Waveguide Operated at Telecommunication Wavelength

Coherent Broadband Spectrum Generation in Rectangular Silicon Core Buried Waveguide Operated at Telecommunication Wavelength

Strong enhancement of third harmonic generation from a Tamm plasmon multilayer structure with WS2.

Improving the conversion efficiency is particularly important for the generation and applications of harmonic waves in optical microstructures. Herein, we propose to enhance the efficiency of third harmonic generation by integrating a monolayer WS2 with the metal/dielectric/photonic crystal multilayer structure. The numerical simulations show that the multilayer structure enables to generate the Tamm plasmon mode between the metal film and photonic crystal around the telecommunication wavelength, which is consistent with the experimental result. By measuring with a self-built nonlinear optical micro-spectroscopy system, we find that the third harmonic signal can be reinforced by 16-fold through inserting the monolayer WS2 in the dielectric spacer. This work will provide a new way for improving nonlinear optical response, especially THG in multilayer photonic microstructures.

High-power electrically pumped terahertz topological laser based on a surface metallic Dirac-vortex cavity

Topological lasers (TLs) have attracted widespread attention due to their mode robustness against perturbations or defects. Among them, electrically pumped TLs have gained extensive research interest due to their advantages of compact size and easy integration. Nevertheless, limited studies on electrically pumped TLs have been reported in the terahertz (THz) and telecom wavelength ranges with relatively low output powers, causing a wide gap between practical applications. Here, we introduce a surface metallic Dirac-vortex cavity (SMDC) design to solve the difficulty of increasing power for electrically pumped TLs in the THz spectral range. Due to the strong coupling between the SMDC and the active region, robust 2D topological defect lasing modes are obtained. More importantly, enough gain and large radiative efficiency provided by the SMDC bring in the increase of the output power to a maximum peak power of 150 mW which demonstrates the practical application potential of electrically pumped TLs.

Wideband and low-spurious optical waveform generator for optically addressable quantum systems manipulation and control

Optical manipulation of quantum systems requires stable laser sources able to produce complex waveforms over a large frequency range. In the visible region, such waveforms can be generated using an acousto-optic modulator driven by an arbitrary waveform generator, but these suffer from a limited tuning range typically of a few tens of MHz. Visible-range electro-optic modulators are an alternative option offering a larger modulation bandwidth, however they have limited output power which drastically restricts the scalability of quantum applications. There is currently no architecture able to perform phase-stabilized waveforms over several GHz in the visible or near infrared region while providing sufficient optical power for quantum applications. Here we propose and develop a modulation and frequency conversion set-up able to deliver optical waveforms over a large frequency range, with a high spurious extinction ratio, scalable to the entire visible/near infrared region with high optical power. The optical waveforms are first generated at telecom wavelength and then converted to the emitter wavelength through a sum frequency generation process. By adapting the pump laser frequency, the optical waveforms can be tuned to interact with a broad range of optical quantum emitters or qubits such as alkali atoms, trapped ions, rare earth ions, or fluorescent defects in solid-state matrices. Using this architecture, we were able to detect and study a single erbium ion in a nanoparticle. We also generated high bandwidth signals at 606 nm, which would enable frequency multiplexing of on-demand read-out Pr3+:Y2SiO5 quantum memories.

Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25 s at 100 mK, and of order 1 s at 1.3 K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems’ hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.

Cavity-enhanced photon indistinguishability at room temperature and telecom wavelengths

Indistinguishable single photons in the telecom-bandwidth of optical fibers are indispensable for long-distance quantum communication. Solid-state single photon emitters have achieved excellent performance in key benchmarks, however, the demonstration of indistinguishability at room-temperature remains a major challenge. Here, we report room-temperature photon indistinguishability at telecom wavelengths from individual nanotube defects in a fiber-based microcavity operated in the regime of incoherent good cavity-coupling. The efficiency of the coupled system outperforms spectral or temporal filtering, and the photon indistinguishability is increased by more than two orders of magnitude compared to the free-space limit. Our results highlight a promising strategy to attain optimized non-classical light sources.

Zincblende InAsxP1-x/InP Quantum Dot Nanowires for Telecom Wavelength Emission.

InAsxP1-x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAsxP1-x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAsxP1-x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAsxP1-x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAsxP1-x QDs with a composition in the range of x = 0.24-1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAsxP1-x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

Topologically Protected Parametric Wavelength Conversion in a Valley Hall Insulator

AbstractNonlinear phenomena are investigated in a topological photonic valley Hall insulator (VHI) using a Kagome system designed to have localized topological boundary state (TBS) at telecommunications wavelengths. Valley Hall topologically protected nonlinear phenomena are demonstrated. Similar transmission properties and parametric wavelength conversion of up to −12 dB are experimentally achieved using sub‐milliwatt average powers in a zigzag interface without back‐scattering, compared with a straight interface. Furthermore, a 7 dB slow light enhancement is observed in the conversion efficiency near the red edge in the transmission band of the boundary state, demonstrating how slow light‐induced backscattering may be circumvented by leveraging the topologically protected boundary state. A Kerr‐induced delocalization of the valley Hall topological state (VHTS) is further experimentally observed, which can be harnessed to control the properties of topological edge states.

Synchronized source of indistinguishable photons for quantum networks

We present a source of indistinguishable photons at telecom wavelength, synchronized to an external clock, for the use in distributed quantum networks. We characterize the indistinguishability of photons generated in independent parametric down-conversion events using a Hong-Ou-Mandel interferometer, and show non-classical interference with coalescence, C = 0.83(5). We also demonstrate the synchronization to an external clock within sub-picosecond timing jitter, which is significantly shorter than the single-photon wavepacket duration of ≈ 35 ps. Our source enables scalable quantum protocols over multi-node, long-distance optical networks using network-based clock recovery systems.