Telecommunication Wavelengths Research Articles

Computation of the near-infrared electro-absorption in GeSn/SiGeSn step quantum wells

In this study, we propose a theoretical simulation of the type-I step quantum well obtained from GeSn/SiGeSn to scan a wide range of telecommunication wavelengths and obtain near-infrared optical modulators. At T = 300 K, the band discontinuities and energy gap between stretched Ge1−xSnx and relaxed Si0.1Ge0.9−ySny due to the acquisition of the heterostructure were calculated.Then, optimization of this heterostructure based on (Si) GeSn was performed using the solid theory model to balance out the composition y of Si0.1Ge0.9-ySny relaxed and thickness of Ge0.91Sn0.09 QWs. The eigenenergies and their related wavefunctions are computed by solving the Schrödinger equation using the finite difference method under the framework of the effective mass approximation. Depending on the y concentration, the energy levels of the electron and the heavy hole, the change of transition energies and oscillator strength were examined for different well widths. Additionally, the absorption coefficient with y concentration and structure parameters were examined.From the findings obtained, it was determined that this material group is very important to obtain high efficiency from electro-absorption modulators covering the 1.55 μm wavelength range.

Coherent Broadband Spectrum Generation in Rectangular Silicon Core Buried Waveguide Operated at Telecommunication Wavelength

Coherent Broadband Spectrum Generation in Rectangular Silicon Core Buried Waveguide Operated at Telecommunication Wavelength

Strong enhancement of third harmonic generation from a Tamm plasmon multilayer structure with WS2.

Improving the conversion efficiency is particularly important for the generation and applications of harmonic waves in optical microstructures. Herein, we propose to enhance the efficiency of third harmonic generation by integrating a monolayer WS2 with the metal/dielectric/photonic crystal multilayer structure. The numerical simulations show that the multilayer structure enables to generate the Tamm plasmon mode between the metal film and photonic crystal around the telecommunication wavelength, which is consistent with the experimental result. By measuring with a self-built nonlinear optical micro-spectroscopy system, we find that the third harmonic signal can be reinforced by 16-fold through inserting the monolayer WS2 in the dielectric spacer. This work will provide a new way for improving nonlinear optical response, especially THG in multilayer photonic microstructures.

High-power electrically pumped terahertz topological laser based on a surface metallic Dirac-vortex cavity

Topological lasers (TLs) have attracted widespread attention due to their mode robustness against perturbations or defects. Among them, electrically pumped TLs have gained extensive research interest due to their advantages of compact size and easy integration. Nevertheless, limited studies on electrically pumped TLs have been reported in the terahertz (THz) and telecom wavelength ranges with relatively low output powers, causing a wide gap between practical applications. Here, we introduce a surface metallic Dirac-vortex cavity (SMDC) design to solve the difficulty of increasing power for electrically pumped TLs in the THz spectral range. Due to the strong coupling between the SMDC and the active region, robust 2D topological defect lasing modes are obtained. More importantly, enough gain and large radiative efficiency provided by the SMDC bring in the increase of the output power to a maximum peak power of 150 mW which demonstrates the practical application potential of electrically pumped TLs.

Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25 s at 100 mK, and of order 1 s at 1.3 K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems’ hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.

Cavity-enhanced photon indistinguishability at room temperature and telecom wavelengths

Indistinguishable single photons in the telecom-bandwidth of optical fibers are indispensable for long-distance quantum communication. Solid-state single photon emitters have achieved excellent performance in key benchmarks, however, the demonstration of indistinguishability at room-temperature remains a major challenge. Here, we report room-temperature photon indistinguishability at telecom wavelengths from individual nanotube defects in a fiber-based microcavity operated in the regime of incoherent good cavity-coupling. The efficiency of the coupled system outperforms spectral or temporal filtering, and the photon indistinguishability is increased by more than two orders of magnitude compared to the free-space limit. Our results highlight a promising strategy to attain optimized non-classical light sources.

Zincblende InAsxP1-x/InP Quantum Dot Nanowires for Telecom Wavelength Emission.

InAsxP1-x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAsxP1-x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAsxP1-x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAsxP1-x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAsxP1-x QDs with a composition in the range of x = 0.24-1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAsxP1-x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

Topologically Protected Parametric Wavelength Conversion in a Valley Hall Insulator

AbstractNonlinear phenomena are investigated in a topological photonic valley Hall insulator (VHI) using a Kagome system designed to have localized topological boundary state (TBS) at telecommunications wavelengths. Valley Hall topologically protected nonlinear phenomena are demonstrated. Similar transmission properties and parametric wavelength conversion of up to −12 dB are experimentally achieved using sub‐milliwatt average powers in a zigzag interface without back‐scattering, compared with a straight interface. Furthermore, a 7 dB slow light enhancement is observed in the conversion efficiency near the red edge in the transmission band of the boundary state, demonstrating how slow light‐induced backscattering may be circumvented by leveraging the topologically protected boundary state. A Kerr‐induced delocalization of the valley Hall topological state (VHTS) is further experimentally observed, which can be harnessed to control the properties of topological edge states.

Synchronized source of indistinguishable photons for quantum networks

We present a source of indistinguishable photons at telecom wavelength, synchronized to an external clock, for the use in distributed quantum networks. We characterize the indistinguishability of photons generated in independent parametric down-conversion events using a Hong-Ou-Mandel interferometer, and show non-classical interference with coalescence, C = 0.83(5). We also demonstrate the synchronization to an external clock within sub-picosecond timing jitter, which is significantly shorter than the single-photon wavepacket duration of ≈ 35 ps. Our source enables scalable quantum protocols over multi-node, long-distance optical networks using network-based clock recovery systems.

Time-bin entanglement at telecom wavelengths from a hybrid photonic integrated circuit

Mass-deployable implementations for quantum communication require compact, reliable, and low-cost hardware solutions for photon generation, control and analysis. We present a fiber-pigtailed hybrid photonic circuit comprising nonlinear waveguides for photon-pair generation and a polymer interposer reaching 68dB\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${68}\\,\\hbox {dB}$$\\end{document} of pump suppression and photon separation based on a polarizing beam splitter with >25dB\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$>{25}\\,\\hbox {dB}$$\\end{document} polarization extinction ratio. The optical stability of the hybrid assembly enhances the quality of the entanglement, and the efficient background suppression and photon routing further reduce accidental coincidences. We thus achieve a 96-8+3%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\left( 96_{-8}^{+3}\\right) \\%$$\\end{document} concurrence and a 96-5+2%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\left( 96_{-5}^{+2}\\right) \\%$$\\end{document} fidelity to a Bell state. The generated telecom-wavelength, time-bin entangled photon pairs are ideally suited for distributing Bell pairs over fiber networks with low dispersion.

Waveguide-integrated twisted bilayer graphene photodetectors

Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W–1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s–1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

Long infrared detector based on Se-hyperdoped black silicon

Infrared (IR) detectors play crucial roles in various applications. A significant milestone in advancing the next-generation low-cost silicon technology is the enhancement of hyperdoped black silicon (b-Si) photodetectors, particularly within the IR wavelength range. In this study, highly selenium (Se)-doped b-Si photodetectors. Through the optimization of laser parameters and the application of SiO2 passivation, significant enhancements were achieved in responsivity (R), external quantum efficiency, and specific detectivity (D*) within the long-wave IR range, culminating in a D* of 1.3 × 1012 Jones at 9.5 μm. Additionally, the Se: b-Si photodetectors maintain a D* of approximately 1.3 × 1011 Jones at critical optical telecommunications wavelengths of 1.3 μm and 1.5 μm. These results significantly contribute to the advancement of IR photodetector technology and provide a foundation for the development of highly efficient, low-cost, and broadband IR detectors for Si photonic applications.

Broadband silicon nitride integrated polarization rotators at 780 nm

Polarization management, and in particular polarization rotation, is becoming increasingly important for photonic integrated circuits (PICs). While fiber-optic networks are generally polarization insensitive, the large aspect ratio of high-index-contrast PIC waveguides leads to a large polarization-dependent response of integrated components such as waveguides, optical cavities, couplers, etc. Although foundry-processed polarization rotators operating at telecom and datacom wavelengths (C- and O-band) have been demonstrated, to date, there have been few reports of devices operating at shorter wavelengths. This work demonstrates silicon nitride (SiN) polarization rotators operating from λ=700-1000 nm (the I/Z-band) that take advantage of optical coupling between two waveguiding layers in a standard foundry process. We demonstrate a broadband white-light polarization measurement setup that enables precise characterization of the polarization-dependent transmission of photonic waveguide devices. Measurements on foundry-processed devices confirm full TE-to-TM rotation exhibiting a maximum polarization extinction ratio (PER) approaching 20 dB (limited by our measurement setup), and an exceptionally large bandwidth of up to 160 nm with an insertion loss less than 0.2 dB. Beam propagation method (3D-BPM) simulations show good agreement with experimental data and enable the device parameters to be adjusted to accommodate different operating wavelengths and geometries with no changes to the existing foundry process. This work opens up opportunities for applications in quantum information and bio-sensing where operation at λ<1000nm is needed.

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.

The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.

High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band.

Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.

Highly-oriented single-crystalline gold quantum-dot metamaterials as new prospective materials for photonics

Highly-oriented single-crystalline gold quantum-dot metamaterials as new prospective materials for photonics

Deterministic storage and retrieval of telecom light from a quantum dot single-photon source interfaced with an atomic quantum memory.

A hybrid interface of solid-state single-photon sources and atomic quantum memories is a long sought-after goal in photonic quantum technologies. Here, we demonstrate deterministic storage and retrieval of light from a semiconductor quantum dot in an atomic ensemble quantum memory at telecommunications wavelengths. We store single photons from an indium arsenide quantum dot in a high-bandwidth rubidium vapor-based quantum memory, with a total internal memory efficiency of (12.9 ± 0.4)%. The signal-to-noise ratio of the retrieved light field is 18.2 ± 0.6, limited only by detector dark counts.

Silicon Nanoantennas for Ultra‐Compact, High‐Speed and Low‐Power Consumption Electro‐Optic Modulators

AbstractTo keep pace with the expanding data capacity in modern communications and increasing on‐chip integration density, it is highly desirable to have electro‐optic modulators featured with compact footprint, large modulation bandwidth, low energy consumption, and full complementary metal‐oxide‐semiconductor (CMOS) compatibility. Here, this work experimentally demonstrates a high‐speed electro‐optic modulator in the telecommunication wavelength range made of a 1D chain resonator of Mie‐resonant silicon nanoparticles. The modulator exploits the plasma dispersion effect and works in the carrier depletion configuration. The resulting large modulation bandwidth over 40 GHz and low energy consumption of 23 fJ bit−1 are attributed to its ultra‐compact footprint of 10 µm2. The open eye diagrams are measured up to 40 Gbits s−1. The modulators are fabricated at wafer level by a silicon photonic foundry using CMOS‐compatible process. This modulator shows promise for achieving higher integration density and larger modulation bandwidth. It can be added to the existing on‐chip device building blocks library and used for a wide range of applications, including data communication, quantum photonics, and non‐reciprocal optics.

Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures

The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm antibunching. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.

Highly efficient visible and near-IR photon pair generation with thin-film lithium niobate

Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables the use of more accessible silicon detector technology, and opens up applications in imaging and spectroscopy. Here, we present high brightness ((1.6 ± 0.3) × 109 pairs/s/mW/nm) visible–near-IR photon pair generation in a periodically poled lithium niobate nanophotonic waveguide. The degenerate spectrum of the photon pairs is centered at 811 nm with a bandwidth of 117 nm when pumped with a spectrally multimode laser diode. The measured on-chip source efficiency of (2.3 ± 0.5) × 1011 pairs/s/mW is on par with source efficiencies at telecom wavelengths and is also orders of magnitude higher than the efficiencies of other visible sources implemented in bulk crystal or diffused waveguide-based technologies. Further improvements in the brightness and efficiencies are possible by pumping the device with a single-frequency laser, which would also shrink the pair bandwidth. These results represent the shortest wavelength of photon pairs generated in a nanophotonic waveguide reported to date by nearly an octave.