Chemical Vapor Deposition Technology Research Articles

Electronics and Optoelectronics Based on Tellurium.

As a true 1Dsystem, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31eV in bulk to 1.04eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

Stoichiometry modulated tunable optoelectronic properties of Nb-doped WS2 synthesized by chemical vapor deposition method.

Significant progress has been made in the field of two-dimensional WS2, yet the precise control of the doping process to achieve desired properties and the interpretation of complex physical phenomena in these novel materials necessitate thorough research. In this study, Nb-doped WS2 is synthesized using chemical vapor deposition technology, leading to triangular flakes with a side length of 12-20μm. The X-ray photoelectron spectroscopy analysis indicates that the NbW substitution defect functions as an electron acceptor. The interlayer and transverse forces of the Nb-doped WS2 flake approach 1 nN and 150 pN, respectively. As the doping concentration increases, the valence band maximum energy of Nb-doped WS2 ranges from 4.06eV to 4.3eV. Furthermore, the performance of the photodetector is discussed.

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga2O3 films and the applications in ultraviolet photodetectors

In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga2O3 films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm2/V·s and 3.33 × 1016 cm−3, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.

Patterned 3D-graphene for self-powered broadband photodetector

The remarkable ultra-wideband energy capabilities of zero-bandgap two-dimensional (2D) graphene have made it an outstanding material for photon absorption and charge carrier generation across a broad spectrum. However, atomically thick 2D-graphene only exhibits a light absorption efficiency of 2.3%, posing a challenge for graphene-based photodetectors to harness photon energy effectively. This study utilized plasma-enhanced chemical vapor deposition technology and a mask to create in situ patterned 3D-graphene/Si-based Schottky heterojunctions. The porous structure and natural nano-resonant cavities of the 3D-graphene enhanced the probability of light absorption, while the curved and sharp edges and corners of the patterned 3D-graphene concentrated the local electromagnetic field and induced localized surface plasmon resonance. Both theoretical and experimental analyses confirmed the improved light absorption mechanisms and charge transfer of photogenerated carriers under the built-in electric field. The photodetector based on the patterned 3D-graphene/Si Schottky structure exhibits excellent broadband response characteristics spanning from 380 to 1550 nm, with responsivity and specific detectivity of 68.47 A/W and 1.43 × 1012 Jones at a wavelength of 1550 nm. Furthermore, the photodetector demonstrated ultrafast microsecond-level response times (116/120 μs rise/fall times) along with exceptional stability and reliability. The potential applications of as-fabricated photodetector include logic devices such as “AND” and “OR” gates and information encryption. This research holds valuable scientific significance for the design of future optoelectronic devices and provides crucial insights and technical support for developing high-performance Si-based graphene detectors.

Multi-interfaced FeCoNi@C/carbon cloth composites for eliminating electromagnetic wave pollution

To tackle the increasing electromagnetic pollution, new and efficient electromagnetic wave absorption (EWA) and shielding (EWS) materials are urgently needed. Multi-component synergism and complex microstructure design are effective measures to improve the EWA and EWS properties. However, how to implement the above designs still faces huge challenges. Herein, multi-interface carbon-coated FeCoNi nanoneedles grown on carbon cloth (FeCoNi@C/CC) were synthesized by a combination of hydrothermal process and chemical vapor deposition (CVD) technology with the concept of “green synthesis”. Using acetylene as the carbon source and atmosphere, the FeCoNi ternary hydroxide can be transformed into a multiple magnetic component (Fe3O4, Ni, and Co metals) by simple annealing. Simultaneously, a uniform carbon layer is formed on the surface, resulting in a composite system with a variety of heterogeneous interfaces and loss mechanisms. Additionally, the dielectric and magnetic loss capacities can be effectively adjusted by changing the temperature of CVD. The optimized FeCoNi@C/CC as filler exhibits remarkable EWA performance with a minimum reflection loss of −69.3 ​dB at a thickness of 1.82 ​mm and a maximum effective absorption bandwidth of 6.80 ​GHz. Moreover, the composites as an integrated component also show a fascinating electromagnetic interference shielding efficiency of 42.2 ​dB. This work provides a guide for the structural design of high-performance electromagnetic protection materials with multi-heterogeneous interfaces.

Directional growth of graphene by microwave plasma CVD constructed TiO2@Ag@graphene ternary junction for efficient hydrogen production

This work proposes a novel strategy which the microwave plasma chemical vapor deposition (MPCVD) technology was used as one important preparation process for synthesizing TiO2@Ag@graphene ternary junction. The ternary junction exhibits an enhanced photocatalytic hydrogen production rate of 4.44 mmol·g−1·h−1, which is approximately 9.25 times higher than that of pure TiO2 (0.48 mmol·g−1·h−1). The remarkable photocatalytic activity can be attributed to the strong synergistic effect between TiO2@Ag and graphene. The loaded Ag and graphene can not only act as electronic conductors to effectively promote the separation of charges, but also obviously improve the response of visible light of TiO2. The photogenerated electrons are transferred from TiO2 to graphene via the Ag medium was further verified by DFT calculations. Constructing an Ag-graphene interface can activate carbon atoms, which can quickly capture electron to fill the π* orbital of graphene. TiO2@Ag@graphene ternary junction exhibits a lower ΔGH* value of 0.51 eV than that of TiO2@Ag (1.49 eV), which indicates that TiO2@Ag@graphene ternary junction with optimal absorption energy for the hydrogen intermediate.

Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations.

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.

SPECIFICS OF DESIGNING AN INFRARED PYROMETER-REFLECTOMETER FOR SEMICONDUCTOR HETEROSTRUCTURE FABRICATION

There are general technical requirements for all types of reactors for chemical vapour deposition technology using AIII- BV metalorganic compounds. Among them, it is worth highlighting the large temperature gradients that cause the origin of convection loops, which in turn, taking into account the high speed of the gas flow, lead to turbulence in the reactor instead of the expected laminar flow. It is also important to take into account the change in parameters of the wafer surface during the growth process and the need for signal separation between the useful signal from the wafer surface and the background signal from the wafer carrier, which rotates at fixed speed for uniform deposition of compounds. To obtain high-quality heterostructures with reproducible parameters, it is important to have a system of precise temperature control on the wafer surface directly in the deposition area, since the deposition process for many complex semiconductor devices (for example, laser diodes, LEDs, photodiodes, transistors on heterojunctions) is very sensitive to temperature changes. The method of optical pyrometry is a non-contact method that allows to precisely determine the temperature of the wafer surface and meets the technical requirements of CVD epitaxy growth reactors. This article is devoted to the analysis of the features of the development of optoelectronic systems for precise temperature measurement during epitaxial growth in order to determine the criteria for the selection or development of components of the optoelectronic system of the pyrometer-reflectometer. The main physical processes, electro-optical characteristics of Si photodiode, AlGaAs/GaAs LED and parameters of bandpass interference filters were investigated. Based on the analysis of the obtained research and measurement results, scientific recommendations have been developed. The recommendations aimed at the selection and optimization of the parameters of the components of the pyrometer-reflectometer (photodetectors, light emitting diodes, optical filters) in order to improve the accuracy and temperature stability of measurements in the pyrometer’s operation conditions, which take into account the compensation of emissivity change from the surface of the wafer.

Effects of Cp2Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

The semipolar (11 2‾ 2) plane Mg-doped p-Al0.42Ga0.58N epi-layers were successfully deposited on (10 1‾ 0) m-plane sapphire substrates with metal organic chemical vapor deposition technology. The effects of Cp2Mg molar flow rate on the structural, optical, and electrical properties of p-Al0.42Ga0.58N epitaxial layer were extensively studied. The randomly distributed Mg atoms and/or clusters that partially covered the growth surface were verified to act as an island-like mask to block the propagation of dislocations along the growth direction, resulting in a significant improvement in the crystalline quality of the semipolar Mg-doped p-AlGaN epi-layers. Moreover, two emission peaks with novel behavior were observed in the photoluminescence spectrum and identified to be originated from the transition between the conduction band and the Mg-related shallow acceptor energy level, and the deep Mg-induced compensation donor and the Mg acceptor pair-related transition, respectively. In addition, a hole concentration as high as 1.03 × 1017 cm−3 and a resistivity as low as 12.8 Ω cm were achieved for the semipolar Mg-doped p-Al0.42Ga0.58N epi-layer grown with the optimized Cp2Mg molar flow rate in this study.

Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic light-emitting diode on a single chip. In this work, InGaN/GaN micro-truncated pyramid arrays with six equivalent (101̄1) semi-polar facets and one (0001) polar facet were successfully prepared by the metal-organic chemical vapor deposition technology. The average diameter of the obtained uniform micro-truncated pyramids was 6.8 µm with a height of 2.4 µm. According to the results of micro-photoluminescence performed, the InGaN/GaN micro-truncated pyramid arrays can achieve multi-color emission from blue to red. The luminescent positions corresponding to different wavelengths were detected by the cathode luminescence spectrum. The multi-color emission was related to the quantum hybrid structures apart from the discrepancy of In composition in different positions. The developed microstructure can create multi-color emission by combining distinct luminescence modes, which can aid in the design of future optoelectronic devices.

Bias voltage-induced structural change in PECVD-deposited diamond-like carbon coatings for optimizing the tribological performance

To improve the adhesion strength and enhance the wear resistance of diamond-like carbon (DLC) coatings, different negative bias voltages were utilized to deposit a-Si:C:H/H-DLC/DLC composite coatings on the 45 steel substrates using direct current plasma enhanced chemical vapor deposition technology. Influences of negative bias voltages on the surface morphology, microstructure, mechanical properties, and tribological performance were investigated. The results showed that as the bias voltages increased from −400 V to −600 V, the surface roughness and thickness of the coatings increased, reaching a maximum roughness of 0.426 μm and a maximum total thickness of 9.9 μm. Raman data illustrated the decrease of hydrogen contents and the increase in sp3 bonds content, matching well with the increasing hardness and elastic modulus. The residual stress tended to increase as the bias voltages, while the adhesion strength reached the maximum value of 62.45 ± 2.65 N at −550 V. Under the synergistic effects of surface roughness, interfacial adhesion strength, hardness and elastic modulus, the average friction coefficient and wear rate of the coatings initially decreased and then increased, reaching the best tribological performance at −550 V.

Localized corrosion of nitrogen-doped diamond-like carbon films on the surface of 304 stainless steel

Nitrogen-doped diamond-like carbon (N-DLC) films with different nitrogen content were prepared on the surface of 304 stainless steel (SS) using plasma-enhanced chemical vapour deposition technology. Localized failure mechanisms of the N-DLC films under long-term exposure to sodium chloride solutions have been investigated. The results demonstrated that nitrogen doping significantly affected the failure behavior of the N-DLC films. When undoped, the number of pore defects in the film is high, providing a channel for the corrosive medium to attack the substrate metal. Meanwhile, due to the high internal stress within the undoped film, extensive exfoliation of the film occurred under the effect of the growth of oxides at the film-substrate interface. The DLC film on 304 SS is subject to stress corrosion cracking failure during long-term service in sodium chloride solution. However, when nitrogen doping is 10 sccm, the pH of the micro-zone solution was highly variable due to the dissolution of nitrogen in the film and the processes of formation and hydrolysis of NH4+. A large number of residual metal cations dissolved from the substrate combine with oxygen at the corrosion pits mouth to form oxides. This can aggravate the occlusion effect of the pits and severe pitting corrosion of 304 SS occurs under autocatalytic effects. The N-DLC film with 5 sccm nitrogen addition showed the excellent durability properties. The evolution mechanism of oxidation and dissolution behaviors in the presence of variations in local hydrochemistry is also discussed.

In-situ synthesis of high-quality porous Co-NC@MoS2 composites

MOF-derived nanoporous carbon materials and TMDCs are promising candidates for catalytical applications in many fields, such as photovoltaic devices and lithium-sulfur batteries. Traditional TMDCs catalysts suffer from low conductivity and poor catalytic activity, making it difficult to meet industrial applications. Here, Co-NC@MoS2 composite materials were successfully prepared by chemical vapor deposition technology, which exhibit the high electrocatalytic activity, good charge transport ability, multiple internal channels and excellent electrical conductivity due to the dual advantages of two materials. The composite is expected to be applied in energy catalysis fields such as quantum dot sensitized solar cells.

Structural optimization and growth of intrinsic hydrogenated amorphous silicon films by HWCVD

Although the silicon heterojunction (SHJ) solar cell is the crystalline silicon solar cell with highest conversion efficiency at present, its higher cost of production line has been a factor restricting its industrial development. The use of hot wire chemical vapor deposition (HWCVD) technology instead of the mainstream plasma enhanced chemical vapor deposition (PECVD) technology for the deposition of amorphous silicon films can effectively reduce the cost of equipment and processing, and has a bright future. In recent years, i-a-Si:H films grown by PECVD have obtained great improvement in passivation quality, whereas HWCVD technology has been neglected in this field. This has significantly limited the development and application of HWCVD technology in SHJ cell production. In this work, we exploited the differences in the films properties and microstructures deposited by various hot-wire temperatures and successfully developed a structure for the high-passivation-quality i-a-Si:H film grown by HWCVD, consisting of a buffer layer and a double-layer bulk stack. By introducing the buffer layer grown with the 1650 °C hot-wire temperature and pure silane, the effective minority carrier lifetime was improved from 2.3 ms to 7.5 ms, and a cell efficiency enhancement of 0.4%abs was obtained. By depositing the bulk layer sequentially with hot-wire temperatures of 1800 °C and 1900 °C, the passivation quality and the conductance were both improved. An effective minority carrier lifetime of 8 ms and a further cell efficiency enhancement of 0.15%abs were obtained. Finally, SHJ solar cell efficiency of 24.35% was obtained with a home-made HWCVD-based pilot SHJ cell line.

Natural biochar catalyst: Realizing the co-valorization of waste cooking oil into high-quality biofuel and carbon nanotube precursor via catalytic pyrolysis process

Valorizing renewable precursors into high-quality biofuel and functional carbon nanomaterials can considerably improve the economic viability. Here, we propose a process for integrated production of high-quality biofuel and carbon nanotubes from waste cooking oil via catalytic pyrolysis coupling with chemical vapor deposition (CVD) technology. The natural biochar catalyst demonstrates excellent deoxygenation performance and good stability in catalytic pyrolysis process. The alkali/alkaline earth metal species (AAEMs) content in biochar catalysts has a strong correlation with the selectivity of esters and hydrocarbons in bio-oil. The biofuel obtained under optimal conditions exhibited potential as a precursor for jet fuel. The CVD process convert pyrolysis gas into carbon nanotubes with yield of 2.13%. The technical–economic analysis demonstrated the feasibility of the integrated process, projecting profitability and substantial total profit over a ten-year period. Overall, this study improves the economic viability of the waste cooking oil pyrolysis process and supports its wider commercial application.

Facile sulfur-assisted synthesis of GaAs nanowires /si heterojunctions for broadband self-powered photodetector

Nanowires (NWs)-based heterojunction photodetectors (PDs) have been widely applied in the fields of remote sensing, night vision, environmental monitoring, and optical communications with high light absorption coefficient and photoelectric conversion efficiency. Here, S-GaAs NWs/Si heterojunction was developed to form a broadband self-powered PDs by growing GaAs NWs on Si substrate through the sulfur-catalyzed assisted chemical vapor deposition (CVD) technology. Compared with the pure GaAs NWs, the sulfur-assisted catalysts could not only inhibit Ostwald ripening of Au seeds to improve the crystalline quality of NWs but also form a thin Ga–S bond passivation layer to reduce surface defects and enhance the optoelectronic performance of the PDs. The fabricated GaAs NWs/Si heterojunction PDs exhibit excellent performances with the large responsivity of 10.3 mA W−1 and high detectivity of 9.59 × 1012 cm Hz1/2 W−1. Additionally, the designed PDs have the broadband wavelength photoresponse from visible to near infrared and fast response speed (rise/fall time of 3.8/21.8 ms). Importantly, the develop strategy of hybrid heterojunction PDs can be extended to other semiconductor materials for facilitating the practical application of high-performance optoelectronic devices.

Enhancing the quality of homoepitaxial (−201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium

This article innovatively uses pulsed metal-organic chemical vapor deposition technology to optimize the quality of β-Ga2O3 thin films on (−201) β-Ga2O3 homo-substrate using indium pulse-assisted technology. The results demonstrate that the pulsed indium-assisted method, when compared with the traditional indium-assisted method, effectively suppresses the desorption of Ga2O, enhances the flatness of the β-Ga2O3 film, and reduces the surface roughness from 34.8 to 0.98 nm. The optimized single crystalline β-Ga2O3 film was grown with pulsed-indium, and the full width at half maximum of x-ray diffraction rocking curve was 30.42 arc sec, smaller than that of the continuous indium β-Ga2O3 (56.1 arc sec). In combination with the x-ray photoelectron spectroscopy O1s split-peak fitting analysis, the relative content of oxygen vacancies in the film was significantly reduced by pulsed indium-assisted method. The Hall mobility of films assisted by pulsed-indium is approximately 14 times higher than that of films assisted by traditional indium. The pulsed indium technology provides an idea for homoepitaxial growth of high-quality β-Ga2O3 films.

Corrosion behavior of Si-DLC film in simulant solutions containing CO2-H2S-Cl−

Tubing and casing failure due to corrosion is a common problem in the oil industry. The Si-DLC film deposited by plasma enhanced chemical vapor deposition (PECVD) technology is expected to protect the pipeline during oil and gas exploitation. Corrosion tests were carried out in different Na2S·9H2O concentrations and temperatures in order to evaluate the corrosion resistance and stability of Si-DLC film. The results show that the Si-DLC film significantly improves the corrosion resistance of the SS304 substrate. There is no significant change on the surface of Si-DLC film with the increase of temperature, and the XPS spectrum and Raman spectrum of DLC film after corrosion possess no obvious change, which indicates that Si-DLC film possesses a great high temperature stability. The Si-DLC film is denser and it possesses excellent protective effect on the substrate compared to the corrosion product layer. The as-deposited Si-DLC film possesses excellent corrosion resistance in CO2-H2S-Cl− environment and this study provides a promising protective material for the inner surface of the pipeline during oil and gas exploitation.

Crystal orientation control of HFCVD diamond spherical film tools and tribological behavior on steel

(111)-oriented micron-crystalline diamond (111MCD), (110)-oriented micron-crystalline diamond (110MCD) and (110)-oriented nano-crystalline diamond (110NCD) spherical films were prepared on the surface of spherical WC-Co polishing tools by hot filament chemical vapor deposition technology. The microstructure, molecular structure, crystal orientation and surface roughness of spherical films were characterized by SEM, XRD, EBSD and White-light interferometer. The friction performance and material removal mechanisms were studied by friction experiments on steel. The results showed that both crystal orientation and grain size variation significantly influenced the tool properties. The roughness and friction coefficient of 111MCD, 110MCD, and 110NCD films decreased successively. During the friction process, the transformation of diamond to graphite reduced the friction coefficient but accelerated film delamination. 111MCD has the fastest material removal rate, but the graphitization rate and wear rate of the film are the highest, and there are a lot of abrasive chips in the friction interface. Diamond of (110) orientation can improve the wear resistance of the film and reduce the abrasive wear of the workpiece. Compared to 111MCD, 110NCD exhibited a 29.3 % reduction in friction coefficient, a 90 % improvement in wear resistance, a 49.4 % increase in surface smoothness of the processed workpiece, and the highest ID/IG value of 1.45 after film wear, demonstrating superior polishing performance and anti-graphitization properties. These results indicate that 110NCD tool is a highly efficient polishing tool with great potential.

AlGaAs photocathode with enhanced response at 532 nm

The AlGaAs photocathode can be used in the field of underwater optical communication because of its fast response speed and adjustable spectral response range. In order to solve the problem that the low light absorption of the AlGaAs emission layer limits the improvement of its quantum efficiency, the distributed Bragg reflector (DBR) structure is used to reflect the light at a specific wavelength back to the emission layer to further increase the absorption rate, thus improving the response capability of the photocathode at 532 nm. The spectral response model of the AlGaAs photocathode with DBR structure is obtained by solving one-dimensional continuity equation. The optical model of the AlGaAs photocathode with enhanced response at 532 nm is established by the finite-difference time-domain method. The effects of the sublayer periodic pairs, the sublayer material and the thickness of emission layer and buffer layer on the absorption rate of emission layer are analyzed. The light absorption distributions of AlGaAs photocathode with and without DBR structure are compared, and the influence mechanism of DBR structure on the blue-green light absorption capacity of AlGaAs photocathode emission layer is clarified, which can provide a theoretical basis for designing its structural parameters. The results show that the DBR structure with a periodic pair of 20 and Al<sub>0.7</sub>Ga<sub>0.3</sub>As/AlAs has the best reflection effect on 532 nm light. Based on the DBR structure, when the thickness of the emission layer and buffer layer are 495 nm and 50 nm, respectively, the emission layer has the best absorption rate of 532 nm light. Furthermore, two kinds of AlGaAs photocathodes with and without DBR structure are prepared by the metal-organic chemical vapor deposition technology, and the reflectivity and profile structure of the grown samples are characterized. Then the Cs/O activation experiments are performed to compare the spectral response curves. It is found that the spectral response of the AlGaAs photocathode sample with DBR structure at 532 nm wavelength is about twice that of the sample without DBR structure.