Synthesis Of Silicon Carbide Research Articles

Effect of rice husk morphology on the ability to synthesize silicon carbide by pyrolysis method

Silicon carbide (SiC) is a mineral with good technical properties and high economic value. However, the synthesis of SiC is expensive because it is synthesized at a high-temperature environment (above 1500oC). The synthesis of SiC from biomass can significantly reduce the synthesis temperature. One commonly used biomass material for synthesizing SiC is rice husk. However, the ability to synthesize SiC depends on the shape of the rice husk. The influence of the morphology of rice husk on the ability to synthesize SiC was studied in this study. Experimental results showed that the original rice husk would give better SiC formation capacity than the rice husk powder. The amount of SiC formed using the original rice husk when impregnated by sodium silicate solution and pyrolysis at 1200oC is 18.3% (wt%.). With rice husk powder, it is 15.12% (wt%.). The results of analysis of the mineral composition, functional groups, and morphologies by X-ray diffraction (XRD), Fourier Infrared Transform Method (FT-IR), and Scanning Electron Microscopy (SEM) found that the polymorphy of SiC is α-SiC and β-SiC. These minerals are the basis for SiC from rice husks, which can be applied as wear-resistant materials.

Magnesium-Thermal Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Carbon Fibers as the Carbon Source

Magnesium-Thermal Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Carbon Fibers as the Carbon Source

Effect of leakage of volatile synthesis products on silicon carbide yield in an electrothermal fluidized bed reactor

Effect of leakage of volatile synthesis products on silicon carbide yield in an electrothermal fluidized bed reactor

Spark plasma sintering of SiC-based bulk materials from carbonaceous residue of rice husk thermal processing

Relevance. The search for a useful application of carbonaceous residues of rice husks thermal processing. These residues due to high silicon content in the inorganic part can potentially be used to produce silicon carbide – an important functional material for various fields of science and technology. Useful utilization of this waste will allow not only solving the environmental problem associated with their inefficient application and formal disposal, but also obtaining value-added products in the form of SiC-based ceramics. Aim. To obtain SiC-based bulk products from carbonaceous residues of rice husk thermal processing by spark plasma sintering with a minimum number of additional stages of feedstock processing. Objects. SiC-based bulk products obtained using carbonaceous residues of rice husk thermal processing. The samples were obtained by spark plasma sintering at 1800 °C, pressure of 60 MPa and holding time of 10 minutes. Methods. Spark plasma sintering; X-ray diffractometry (X-ray phase analysis); scanning electron microscopy; vacuumless arc discharge synthesis method. Results. The authors have carried out the experimental studies to assess the possibility of applying carbonaceous residue of rice husk thermal processing as a precursor for the synthesis of silicon carbide in bulk (ceramics) and dispersed (powder) forms. A series of experiments on spark plasma sintering of carbonaceous residue from rice husk thermal processing in the initial and milled form, with SiO2 silica sand additives, as well as with the use of silicon carbide powders synthesized from carbonaceous residue by vacuumless arc discharge method were implemented. The latter is performed within a one-stage fast-flowing process in an air environment and does not require the use of a vacuum system. Preliminary results demonstrated the possibility of obtaining bulk products and dispersed powders based on silicon carbide with a content of at least 50 and 60 wt %, respectively, and indicate the prospects of further increasing phase purity by optimizing spark plasma sintering and vacuumless arc discharge synthesis.

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir-Blodgett films on silicon substrate.

Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir-Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.

On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun

On the Possibility of Synthesis of Silicon Carbide Using an Indirect-Action Plasma Gun

Facile synthesis process for preparing silicon carbide with unique honeycomb structure

AbstractThis study introduces a novel and versatile method for synthesizing honeycomb‐structured silicon carbide (SiC). The innovative approach utilizes a sucrose solution as the carbon source and nonporous silica spheres, which serve both as silicon precursors and templates, allowing for precise control over pore sizes. Notably, the process is characterized by its cost‐effectiveness, eco‐friendliness, and the utilization of milder conditions attributed to magnesiothermic reduction. The tunable pore sizes achieved through adjustments in the size of silica particles offer a versatile platform for customizing SiC materials to meet specific application requirements. Beyond its customizable nature, the method reduces the environmental footprint of SiC synthesis by utilizing eco‐friendly materials. Its combined attributes of accessibility, sustainability, and performance optimization underscore its potential for driving advancements in SiC‐based applications across various industrial and scientific domains.

SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE

In this study, the processes involved in synthesis of silicon carbide (SiC) from a natural mineral raw material (diatomite mixed with coke) were investigated. The initial material mixture was placed in a graphite crucible installed on the focal zone of a large solar furnace. High-temperature heating was carried out using a stream of concentrated high-density solar radiation (200-300 W/cm<sup>2</sup>). After irradiating the material sample with the concentrated solar radiation, the crucible was cooled arbitrarily for 30 minutes. The synthesized material contained three phases: β-SiC with a cubic crystalline lattice and lattice parameter of 0.436 nm; α-SiC with a hexagonal crystalline lattice and lattice parameters of a = 0.307 nm and c = 1.511nm; and graphite with a hexagonal crystalline lattice. The SiC material obtained in the solar furnace in a freshly sintered state showed high refractoriness (up to 1650°C), while the material fired at 1550°C showed refractoriness up to 1580°C.

Silicon carbide synthesis in a solar oven from natural raw materials

The processes of synthesis of silicon carbide from natural mineral raw materials - diatomite mixed with coke (or coal, or graphite) have been studied. High-temperature heating was carried out using a flow of concentrated solar radiation (CSI) of high density (200 W/cm 2 ). The mixture was placed in a graphite crucible mounted on the focal zone of the Large Solar Furnace. The crucible with the material sample after irradiation with the XI flow was cooled in an arbitrary manner for 30 minutes. The analysis showed that such a diffraction pattern is due to the presence of three phases - silicon carbide β- SiC with a cubic system with lattice parameters a = 4.36 A and α- SiC with a hexagonal lattice with parameters a = 3.07 A c = 15.11 A, as well as graphite C of the hexagonal system.

Silicon carbide synthesis investigation in an electrothermal fluidized bed

Silicon carbide synthesis investigation in an electrothermal fluidized bed

Novel Synthesis of SiC-SiO2 Nanotubes from Cinachyrella sp. and Its Improvement of the Corrosion Resistance of Low Carbon Steel in 3.5% NaCl Water Solution

Coat synthesis of silicon carbide and composites of Si derivatives is a challenge for high-quality thin film applications, including corrosion resistance industries. A novel fabrication process of silicon carbide-silicon dioxide nanotube composites (SCDNTs) was developed by a solid reaction of silicon-carbon (marine sponge Cinachyrella sp.) resources. Trimetallic catalyst (Fe/Ni/Zr) supported on different Al2O3 media with heating in an argon flow was used to prepare SCDNTs composite. A higher crystallinity degree of the nanocomposites is attained at a heating temperature of 1200 °C as a suitable starting temperature to have a reasonable degree of crystallinity. XRD analysis of the prepared composite showed the presence of polycrystalline silicon dioxide and two phases of silicon carbide; 3C-SiC and 6H-SiC. TEM analysis showed the presence of silicon carbide's cubic and hexagonal structures embedded into silicon dioxide nanotubes. FTIR analysis confirmed the XRD and TEM analyses through the presence of the functional groups related to Si-Si, Si-O and Si-C. The SCDNTs spin coating process on LWS was optimized at 1000 rpm. Varying thin coatings of up to 5 layers of SCDNTs were prepared low steel substrate to evaluate its corrosion behavior in a 3.5% NaCl solution. Five-layer SCDNTs composite coating on LCS was the favorable coating as obtained from the electrochemical measurements ensured a corrosion inhibition efficiency of 92.5% and corrosion rate of 63.98 mm/y. XRD spectra and stereomicroscope were used to evaluate the surface of LWS coated with SCDNTs before and after corrosion test.Graphical

Sustainable synthesis of silicon carbide from sludge waste generated in organosilane industry

This study uses organosilane waste, a byproduct of the organosilane industry, to produce SiC particles through an accessible and effective method. Thermodynamic analysis was adopted to provide evidence of this route followed by exploring the effects of carbon content, time and temperature on SiC purity, crystallinity of, and the Si recovery ratio. The maximum purity of SiC of 88.4% and Si recovery of 95% was achieved at a temperature of 1750 °C, time of 45 min, and sludge waste: petroleum coke ratio of 2.8:1. The mechanism of the associated reaction is explained in three parts: phase separation of SiOC, nucleation in Si melt and carbothermal reduction of SiO2. This sustainable approach repurposes sludge waste, which contributes to environmental preservation and resource efficiency.

Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide.

Silicon carbide (SiC) is a very promising platform for quantum information processing, as it can host room temperature solid state defect quantum bits. These room temperature quantum bits are realized by paramagnetic silicon vacancy and divacancy defects in SiC that are typically introduced by irradiation techniques. However, irradiation techniques often introduce unwanted defects near the target quantum bit defects that can be detrimental for the operation of quantum bits. Here, we demonstrate that by adding aluminum precursor to the silicon and carbon sources, quantum bit defects are created in the synthesis of SiC without any post treatments. We optimized the synthesis parameters to maximize the paramagnetic defect concentrations-including already established defect quantum bits-monitored by electron spin resonance spectroscopy.

An overview of the synthesis of silicon carbide–boron carbide composite powders

Abstract Recently, silicon carbide–boron carbide composite ceramics have attracted more and more attention. The most important achievements of the silicon carbide–boron carbide composite ceramics should be applied in terms of mechanical, physical, and chemical for use in various advanced industries, such as armor plates, nozzles, abrasive tools, mechanical seals, etc. To prepare silicon carbide–boron carbide composite ceramics with good performance, the synthesis of silicon carbide–boron carbide composite powders is the basis. The synthesis approaches of silicon carbide–boron carbide composite powders are systematically summarized in this review, including ball milling, high-energy ball milling, self-propagating high-temperature synthesis (SHS), and sol–gel. Particularly, nanosized silicon carbide–boron carbide composite powders can be in situ synthesized by high-energy ball milling, SHS, or sol–gel. When commercial silicon carbide and/or boron carbide powders are used as raw materials to synthesize silicon carbide–boron carbide composite powders, the pretreatment of acid etching can significantly remove oxide layers existing on the surfaces of initial powders.

Retraction Note to: Sol–gel synthesis of silicon carbide on silicon pyramids: a promising candidate for supercapacitor electrodes

Retraction Note to: Sol–gel synthesis of silicon carbide on silicon pyramids: a promising candidate for supercapacitor electrodes

Sintering of silicon carbide obtained by combustion synthesis

An activated combustion synthesis method was utilized to synthesize silicon carbide from the elementary mixture in the presence of polytetrafluoroethylene (PTFE) as a thermochemical promoter and product's morphology modifier. Thermodynamic calculations in the initial Si–C-(C2F4)n mixture revealed the influence of PTFE amount and external gas pressure on the adiabatic temperature and equilibrium composition of the products. Combustion parameters and phase composition of the product were sensitive to silicon particle size, PTFE amount, sample diameter and gas pressure. Optimum conditions for the preparation of a mixture of alpha and beta SiC with up to 200 nm in particle size were determined. After consolidation by the spark plasma sintering technique some physicomechanical characteristics of the bulk specimens were measured.

Synthesis and Properties of Silicon Carbide (Review)

Silicon carbide is an extremely hard material that exhibits exceptional corrosion resistance as well as thermal shock resistance. Its high mechanical properties determine the increased performance of materials based on it. The combination of high thermal conductivity and low thermal expansion coefficient determines the stability of silicon carbide at high heating rates and under stationary thermal conditions. To date, significant progress has been made in the development of methods for the synthesis of various materials based on silicon carbide. The main synthesis methods that scientists use in their research are the sol-gel method, sintering, pyrolysis, microwave synthesis, chemical vapor deposition, etc. The use of "green" techniques in the synthesis of SiC has gained wide popularity due to environmental friendliness, renewability, and ease of implementation. This review analyzes modern research in the field of silicon carbide synthesis published in peer-reviewed professional journals.

Carbon ion self–sputtering attained by sublimation of hot graphite target and controlled by pulse injection of a neon–helium gas mixture

The operation of graphite targets with an increased temperature (HT – hot target) is studied for the case of gas injection magnetron sputtering (GIMS) of: 1) diamond–like carbon (DLC), and 2) carbon–silicon carbide (C–SiC) films. A purposely–thinned graphite target with a reduced thermal conductivity is applied for DLC deposition, extending its high temperature sputtering range up to 1636 °C. For the purpose of C–SiC synthesis four sockets with a silicon carbide powder are designed within graphite target. In this approach, the C–SiC target surface can be heated up to 1443 °C due to a greater energy input from impulse plasma, in the range 322–932 J. The HT sputtering is energy–controlled by a pulsed injection of a neon–helium gas mixture. High–energy Ne+ and He+ ions extend the length of pulsed GIMS discharge due to the self–sputtering effect observed during the deposition of DLC and C–SiC films. These conditions result in an almost 5–fold increase in the film growth rate (up to 185 nm/min) with respect to the operation with a cold target, which is due to the assisting vapour sublimation from custom–designed graphite–based targets. The temperature boosted HT GIMS discharge, proves to be an efficient tool for reaching relatively high (∼35 %) sp3–hybridized C content in both carbon–based materials. It also allows for tailoring the energy bandgap of DLC–based optical structure, in the range from 1.7 to 2.75 eV, due to the formation of the (CC) and (CO) bonds. Higher content of silicon oxide (SiO2-x) and silicon carbide (SiC) phases (15 – 23 %) in the case of C–SiC films results in hardness increase from 21.8 to 30.1 GPa.

Research Progress on Application in Energy Conversion of Silicon Carbide-Based Catalyst Carriers

In modern industrial production, heterogeneous catalysts play an important role. A catalyst carrier, as a constituent of heterogeneous catalysts, is employed for supporting and loading active components. The catalyst carrier has a considerable impact on the overall acting performance of the catalysts in actual production. Therefore, a catalyst carrier should have some necessary properties such as a high specific surface area, excellent mechanical strength and wear resistance, and better thermal stability. Among the candidate materials, silicon carbide (SiC) has excellent physical and chemical properties due to its special crystal structure; these properties include outstanding thermal conductivity and remarkable mechanical strength and chemical stability. Therefore, SiC materials with a high specific surface area basically meet the requirements of catalyst carriers. Accordingly, SiC has broad application prospects in the field of catalysis and is an ideal material for preparing catalyst carriers. In the present study, we reviewed the preparation methods and the variation in the raw materials used for preparing SiC-based catalyst carriers with high specific surface areas, in particular the research progress on the application of SiC-based catalyst carriers in the field of energy-conversion in recent years. The in-depth analysis indicated that the construction of SiC with a special structure, large-scale synthesis of SiC by utilizing waste materials, low-temperature synthesis of SiC, and exploring the interaction between SiC supports and active phases are the key strategies for future industrial development; these will have far-reaching significance in enhancing catalytic efficiency, reutilization of resources, ecological environmental protection, energy savings, and reductions in energy consumption.

A Systematic Review on the Synthesis of Silicon Carbide: An Alternative Approach to Valorisation of Residual Municipal Solid Waste

Over the past several decades, industrialised and developing nations have attempted to enhance sustainability. Demands for energy and the acceleration in environmental deterioration are the two primary obstacles to progress. The daily generation of municipal solid waste has been a significant factor in the deterioration of the ecology. To address this issue, a considerable amount of municipal solid waste may be used to synthesise SiC nanomaterials from organic and inorganic fractions and use them as carbon and silica sources. Nanomaterials have progressively received widespread prominence as the development of particulate materials accelerates at an incredible rate. One such material is silicon carbide (SiC), which has garnered considerable interest due to its remarkable performance and wide variety of applications. This review article discusses the SiC polytypes, including cubic, hexagonal, and rhombohedral SiC. The characteristics of silicon carbide, such as its biomimetic, surface, and thermal properties, are also discussed. In addition, the synthesis of silicon carbide was described in depth, including microwave sintering, the calcination method, the carbothermal redox reaction, and much more. The final section describes the applications of silicon carbide, including wastewater treatment, medical implants, and gas detection.