AbstractA DC–20‐GHz broadband and compact single‐pole‐quadruple‐throw (SPQT) switch for Butler matrix switched beam smart antenna system application has been designed and fabricated on 0.15‐μm GaAs pHEMT process. By adopting inductive high impedance transmission lines in series‐shunt switch topology, the SPQT switch demonstrates an insertion loss of 1.25–3.53 dB from DC to 20 GHz, and the isolation is higher than 22 dB with a compact chip size of 1.5 mm2. The measured output 1 dB compression point (OP1 dB) is 16 dBm at 12 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2023–2026, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26993
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