Switching Behavior Research Articles

Circularly polarized radiation to control the superconducting states: stability analysis.

Recently, the use of circularly polarized radiation for on-demand switching between distinct quantum states in a superconducting nanoring exposed to half-quantum magnetic flux has been proposed. However, the effectiveness of this method depends on the system's stability against local variations in the superconducting characteristics of the ring and flux fluctuations. In this study, we utilize numerical simulations based on the time-dependent Ginzburg-Landau equation to evaluate the influence of these inevitable factors on the switching behavior. The results obtained demonstrate that the switching phenomena remain remarkably robust, providing confidence in their experimental observation.

Room Temperature Phase Transition and Luminescence Behavior of a Novel Metal‐Free Ionic Crystal [C7H16NO][ClO4

AbstractMetal‐free ionic crystals have attracted tremendous attention for their environmental friendliness, biocompatibility, easy fabrication and structural variability. Herein, a metal‐free ionic crystal [C7H16NO][ClO4] ([C7H16NO]=1‐methyl‐4‐piperidinemethanol) with a dielectric transition at room temperature was designed and constructed. Differential scanning calorimetry (DSC) proved that there exists a reversible phase transition near room temperature at 304 K, accompanied with switchable dielectric behaviors between the low and high dielectric states. The single crystal structure show that the mechanism of such structural phase transition mainly results from the dynamic motion of perchlorate anions. The compound is further shown to exhibit remarkable luminescent properties, characterized by a prolonged lifetime of 18.6 ns. This work offers valuable insights into the construction of room temperature phase‐transition ionic crystals involved with dielectric switching and blue luminescence properties.

Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism

Abstract In this paper, we propose a doping- and capacitor-less 1T-DRAM cell, which achieved virtual doping by leveraging charge plasma and bias-induced electrostatic doping (bias-ED) techniques in a 5-nm-thick intrinsic silicon body, thereby eliminating doping processes. Platinum was in contact with the drain, while aluminum was in contact with the source, enabling virtual doping of the silicon body into a p*-i-n* configuration via the charge-plasma technique. Two coupled polarity gates and one control gate are positioned above the intrinsic channel region. The intrinsic channel region is virtually doped through the bias-ED by applying voltages to the gates, forming potential wells inside the channel. The voltage applied to the two coupled polarity gates determines whether the device operates in the p- or n-channel mode, whereas the control gate governs the flow of charge carriers. Charge carriers are stored and released in the potential wells inside the channel by adjusting the gate, effectively replacing the capacitor. In this device, the placement of polarity gates on either side of the control gate enables the observation of the reconfigurable characteristics. Moreover, the proposed device utilizes a feedback mechanism, enabling excellent memory characteristics such as a high on/off current ratio of ~10^9, steep switching behavior of ~0.2 µV/dec, short write time of 10 ns, long hold retention of over 100 s, and long read retention of over 600 s.

ZnO-Based Memristive Device for Temperature Sensing: Design, Modeling, and Performance Evaluation

This paper presents the design and modeling of a highly sensitive ZnO-based memristive temperature sensor, underpinned by the fundamental physics of memristive behavior. Utilizing a multi-physics simulation tool, the proposed model accurately maps temperature variation contours within the ZnO pyroelectric material, paving the way for its application in temperature sensing. An in-depth exploration of the sensor's electrical properties under varying temperature conditions reveals exceptional sensitivity (8.9 µV/K) and showcases the inherent non-volatile memory switching behavior of the memristor, making it ideally suited for dynamic applications. Moreover, this sensor operates inherently bias-free, functioning as a self-powered solution for emerging fields like the Internet of Things.

A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities.

A highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent. A comprehensive analysis of the mechanical properties of the resulting supramolecular Co(II)-metallogel was conducted through rheological investigation, considering angular frequency and thixotropic study. The hierarchical rocky network structure of the supramolecular Co(II)-metallogel was unveiled using field emission scanning electron microscopy (FESEM). Transmission electron microscopic (TEM) analysis showed rod-shaped structures via low-magnification high angle annular dark field (HAADF) bright field scanning transmission electron microscopic (STEM) imaging, while energy dispersive X-ray (EDX) elemental mapping confirmed its primary chemical constituents. The formation mechanism of the metallogel was examined via fourier transform infrared spectroscopy (FTIR) spectroscopy. The nature of the synthesized CoA-TA metallogel was affirmed through powder X-ray diffraction (PXRD) analysis. Furthermore, this study involved fabrication of Schottky diode structures in a metal-semiconductor-metal geometry based on cobalt(II) metallogel (CoA-TA), enabling observation of charge transport behavior. Remarkably, a resistive random access memory (RRAM) device utilizing cobalt(II) metallohydrogel (CoA-TA) demonstrated bipolar resistive switching at room temperature and under ambient conditions. The switching mechanism was investigated, revealing the formation and rupture of conductive filaments between metal electrodes that govern the resistive switching behavior. This RRAM device exhibited an impressive ON/OFF ratio (~ 414) and exceptional endurance over 5000 switching cycles. These structures offer great potential for diverse applications such as non-volatile memory design, neuromorphic computing, flexible electronics and optoelectronics. Their advantages lie in their fabrication process, reliable resistive switching behavior and overall performance stability.

Borrower switching behaviour on a P2P lending platform: a study of switching path analysis technique

Borrower switching behaviour on a P2P lending platform: a study of switching path analysis technique

Proton‐Modulated Resistive Switching in a Synapse‐Like Tyrosine‐Rich Peptide‐Based Memristor

AbstractArtificial intelligence has become an essential part of the daily lives and has revolutionized various sectors, including healthcare, finance, transportation, and entertainment. With a substantial increase in processed data, neuromorphic devices that replicate the operation of the human brain have been emphasized owing to their superior efficiency. Typical neuromorphic devices focus on constructing synapse‐like structures. However, biological synapses have more complex mechanisms for efficient data processing. One of the most prominent mechanisms is proton activation, which forms an ion concentration gradient prior to the transmission of neurotransmitters and plays a key role in efficient computation. In this study, proton‐mediated signaling at biological synapses is successfully replicated by fabricating a proton‐modulated memristor device using a tyrosine‐rich peptide film. The ionic input of the memristor is controlled by applying a voltage to proton‐permeable PdHx contacts in a hydrogen atmosphere, thus successfully adjusting the resistive switching behavior. Remarkable improvements in resistive switching and computing performance are observed through proton injection, analogous to “proton‐mediated signaling” at the actual synapse. It is believed that this study proposes a new paradigm for designing biorealistic devices and provides inspiration for precisely controllable ion‐based neuromorphic devices.

On-Off Switching of Singlet Self-Trapped Exciton Emission Endows Antimony-Doped Indium Halides with Excitation-Wavelength-Dependent Luminescence.

Excitation-wavelength-dependent (Ex-De) emitters are a fascinating category of luminescent materials whose emission properties vary with the wavelength of the light used for excitation. Antimony (Sb3+)-doped indium (In)-based metal halides are efficient light emitters; however, the peak fluorescence emission of most Sb3+-activated In-halide remains independent of the excitation wavelength. Here, the study introduces a new Sb3+-doped In-halide cluster, (BDPA)2InCl5:Sb (BDPA+ = C15H18N+, benzyldimethylphenylammonium), which demonstrates efficient Ex-De emission originating from the on-off switchable fluorescence behavior of singlet self-trapped exciton (STE) in 5-coordinate Sb3+ dopant. Interestingly, when excited within the range of 240-370nm, photoluminescence (PL) spectra of (BDPA)2InCl5:Sb show both singlet and triplet STE emission. However, under excitation wavelengths of 370 to 420nm, the singlet STE emission is absent, resulting in a noticeable correlated color temperature change from 1700 to 3800 K. The study provides a new approach to designing color-tunable Sb3+-based luminophores, and also presents a novel application scenario for the widely recognized Sb3+ doping strategy.

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Resistive switching behaviors and conduction mechanisms of IGZO/ZnO bilayer heterostructure memristors

Negative differential resistance and resistive switching behavior in broad-spectrum electroluminescent devices based on Si3N4/Si thin films deposited by E-beam

Negative differential resistance and resistive switching behavior in broad-spectrum electroluminescent devices based on Si3N4/Si thin films deposited by E-beam

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal.

Two-dimensional (2D) van der Waals (vdW) magnetic materials with atomic-scale thickness and smooth interfaces promise the possibility of developing high-density, energy-efficient spintronic devices. However, it remains a challenge to effectively control the perpendicular magnetic anisotropy (PMA) of 2D vdW ferromagnetic materials, as well as the integration of multiple memory cells. Here, we report highly efficient magneto-optical memory arrays by utilizing the huge spin-orbit torques (SOT) induced by the in-plane current in Fe3GeTe2 (FGT) flake. The device is constructed from individual FGT flakes without heavy metal assistance and allows for a low current density. The magneto-optical memory arrays implement nonvolatile memories for three bits and can be repeatedly scrubbed for "writing" and "reading". Besides, we show that FGT nanoflakes possess current-controlled volatile switching behavior at zero magnetic field. These results provide a solution for the next generation of all-vdW-scalable, high-performance spintronic logic devices and SOT-Magnetic Random Access Memory (MRAM).

Synaptic Properties of an Interfacial Memristor Based on a Ga2O3/Nb:SrTiO3 Heterojunction.

Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga2O3/Nb:SrTiO3 heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga2O3/Nb:SrTiO3/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga2O3/Nb:SrTiO3 heterojunction memristor has significant potential in a neuromorphic computing system.

The switch behavior in a gene transcription regulation system driven by Levy noise and Gaussian noise

The switch behavior in a gene transcription regulation system driven by Levy noise and Gaussian noise

Effect of Annealing Conditions on Resistive Switching in Hafnium Oxide-based MIM Devices for Low-power RRAM

Abstract This work presents resistive switching (RS) behaviour in HfO2-based low-power resistive random-access memory (RRAM) devices. A metal-insulator-metal (MIM) structure (Au/HfO2/Pt) was fabricated by sandwiching a thin insulating layer of HfO2 between Pt and Au electrodes. HfO2 films deposited by RF sputtering at room temperature were rapid thermally annealed in N2 ambient at 400 °C and 500 °C. Grazing angle X-ray diffraction (GIXRD), Field emission gun-scanning electron microscopy (FEG-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were employed to analyse the phase, crystal structure, morphology, surface roughness and chemical composition of the HfO2 films. The bipolar RS could be observed in both as-deposited and annealed HfO2 film-based devices from I-V characteristics measured using a source meter. We have investigated the effect of annealing temperature and annealing ambient on the phase formation of HfO2 as well as the RS characteristics and compared with as-deposited film-based device. Annealed HfO2 film-based devices exhibited improved electrical characteristics, including stable and repeatable RS at significantly lower switching voltages (˂1 V) which indicates low power consumption in these devices. The relatively lower processing temperature of the HfO2 films and that too in the films deposited by physical vapor deposition (PVD) technique-RF magnetron sputtering makes this study significantly useful for resistive switching based non-volatile memories.

An Antagonistic Photovoltaic Memristor for Bioinspired Active Contrast Adaptation.

Machine vision systems that consist of cameras and image-processing components for visual inspection and identification tasks play a critical role in various intelligent applications, including pilotless vehicles and surveillance systems. However, current systems usually possess a limited dynamic range and fixed photoresponsivity, restricting their capability of gaining high-fidelity images when encoding a high-contrast scene. Here, it is shown that a photovoltaic memristor incorporating two antagonistic photovoltaic junctions can autonomously adjust its response to varying light stimuli, enabling the amplification of shadows and inhibition of highlight saturation. Due to the dynamic photodoping effect at the p-n junction with an asymmetrical profile, the photocurrent polarities of the antagonistic memristor can be changed as the light intensity increases. The light-intensity-dependent switchable photovoltaic behaviors match Weber's law where photosensitivity is inversely proportional to the light stimuli. An 11×11 memristor array is used to detect a high-contrast scene with light intensities ranging from 1 to 5×104 µW cm-2, achieving a similar active contrast adaptation performance compared with the human visual systems (less than 1.2 s at 94 dB). This work paves the way for innovative neuromorphic device designs and may lead to the development of state-of-the-art active visual adaptation photosensors.

Boosting the Photoresponse of Azobenzene Single-Molecule Junctions via Mechanical Interlock and Dynamic Anchor.

As the most classic photoisomerization system, azobenzene has been widely utilized as a building unit in various photoswitching applications. However, attempts to build azobenzene-based single-molecule photoswitches have met with limited success, giving low on/off ratios. Herein, we demonstrate two designs of azobenzene-based photoresponsive single-molecule junctions, based on mechanically interlocked diazocine and azobenzene-based dynamic anchors, respectively. Molecular conductance measurements using the scanning tunneling microscope breaking junction (STMBJ) technique revealed dramatic conductance changes upon photoillumination, achieving a high on/off ratio of ∼3.7. Using density functional theory (DFT), we revealed peculiar quantum interference (QI) effects in the diazocine molecular switch, indicating that diazocine is an excellent candidate for molecular photoswitches. The asymmetric azobenzene devices with a dynamic anchor exhibit switching behavior between a fully off state and a highly conductive state associated with the trans/cis conformation transition. The findings of this work not only present the design and development of functional molecular devices based on azobenzene units but also provide insight into the fundamental properties of light-induced quantum interference in azobenzene-based molecular devices.

MiRNAs targeted transcription factors HaGATAa/b to mediate the post-mating switch in Helicoverpa armigera female reproductive behavior.

The process of mating induces significant shifts in female reproductive behavior across various species, with the postmating behavioral switch playing a crucial role in insect reproduction. Previous studies have demonstrated the regulatory role of GATA transcription factors in vitellogenin transcription and egg formation in insects, while miRNAs have been implicated in modulating GATA expression and insect reproductive processes. Nevertheless, the precise regulatory mechanism underlying the interaction between miRNAs and GATA transcription factors in the postmating behavioral switch remains largely unexplored. In this study, we identified two key GATA transcription factors, HaGATAa and HaGATAb, as central players in orchestrating the postmating behavior of H. armigera using transcriptomics and RNAi technologies. HaGATAa was found to act upstream of HaGATAb, regulating its expression. Furthermore, we observed a postmating increase in miR-282 levels in females, targeting HaGATAa to regulate egg-laying capacity. Conversely, the decreased expression of miR-2 following mating functioned as a negative feedback regulator, influencing the expression of HaGATAb and thus impacting the postmating behavior of female individuals. Our results revealed a signal-mediated feedback regulatory mechanism that sustains female postmating behavior in H. armigera. These findings not only establish a strong basis for understanding the postmating behavior mechanisms in female moths, but also offer valuable insights for identifying potential targets for pest control strategies. © 2024 Society of Chemical Industry.

Spectroscopic Evidence of Ultrafast Topological Phase Transition by Light-Driven Strain.

Enabling reversible control over the topological invariants, transitioning them from nontrivial to trivial states, has fundamental implications for quantum information processing and spintronics. It offers a promising avenue for establishing an efficient on/off switch mechanism for robust and dissipationless spin-currents. While mechanical strain has traditionally been advantageous for such manipulation of topological invariants, it often comes with the drawback of in-plane fractures, rendering it unsuitable for high-speed, time-dependent operations. This study employs ultrafast optical and THz spectroscopy to explore topological phase transitions induced by light-driven strain in Bi2Se3. Bi2Se3 requires substantial strain for Z2 switching. Our observations provide experimental evidence of ultrafast switching behavior, demonstrating a transition from a topological insulator with spin-momentum-locked surfaces to hybridized states and normal insulating phases under ambient conditions. Notably, applying light-induced strong out-of-plane strain effectively suppresses surface-bulk coupling, facilitating the differentiation of surface and bulk conductance even at room temperature─significantly surpassing the Debye temperature. We expect various time-dependent sequences of transient hybridization and manipulation of topological invariant through photoexcitation intensity adjustments. The sudden surface and bulk transport alterations near the transition point enable coherent conductance modulation at hypersound frequencies. Our findings on the potential of light-triggered ultrafast switching of topological invariants hold promise for high-speed topological switching and its related applications.

Photoinduced modulation and the effect of CNT loading on field effect transistor characteristics of CNT/ZnO/PVDF composite.

CNT/ZnO/PVDF polymer composite phototransistor is studied for the effect of CNT loading and the photoinduced modulation on its transfer characteristics. XRD study shows that the induced strain in the composite is due to the addition of CNT to the ZnO/PVDF composite. The percentage of β-phase present in PVDF is estimated through Raman spectroscopy and the composite's spectral response is determined by UV-Vis absorbance spectroscopy. From the DC electrical conductivity study it is found that the percolation threshold for the composites is obtained for 0.3 wt% of CNT, and 0.44 wt % of CNT loading makes the composite conductive. On adding 1 wt% of CNT, the electrical conductivity of the ZnO/PVDF composite increases 40 times (~ 0.2 μS/m). The temperature-dependent DC conductivity shows that the conductivity of the composites changes from variable range hopping (VRH) to band conductance upon an increase in CNT loading above the percolation threshold and exhibits a negative temperature coefficient (NTC). Two terminal photoconductivity studies are done to understand the photo enhancement and sensitivity of all the devices. PE hysteresis studies show that the polarization of the composites increases drastically from 0.05 μC/cm2 below the percolation threshold to 10 - 30 μC/cm2 above the percolation threshold of CNT in the composite. To study the effect of interfacial polarization on photoconductivity, the composite is studied in a three-terminal device format using SiO2 as a gate dielectric. A band diagram analysis of the oxide-composite and CNT/ZnO interface is done to understand the mechanism behind the photoinduced field effect on transfer characteristics and the effect of CNT loading. The switching behavior and decay time under UV illumination are studied to understand the effect of CNT loading and photoinduced polarization. The persistent photoconductivity decreases and the charge collection efficiency of the FET increases as the CNT loading increases.

Role of sulphur in resistive switching behavior of natural rubber-based memory

The rising environmental awareness has spurred the extensive use of green materials in electronic applications, with bio-organic materials emerging as attractive alternatives to inorganic and organic materials due to their natural biocompatibility, biodegradability, and eco-friendliness. This study showcases the natural rubber based resistive switching memory devices and how varying sulphur concentrations (0 - 0.8 wt.%) in natural rubber thin films impact the resistive switching characteristics. The natural rubber was formulated and processed into a thin film deposited on an ITO substrate as the bottom electrode and with an Ag film as the top electrode. The addition of sulphur modifies the degree of crosslinking in the natural rubber thin film, from which the concentration of -C=C- group and density of defect site (S+) are affected, and hence the resistive switching behavior of the memory device. The devices exhibit bipolar resistance with symmetric switching characteristics which are attributed to the formation of conductive paths facilitate by electron transport along -C=C- and S+ defect sites between the two electrodes. Notably, a sample with 0.2 wt.% sulphur exhibits a high ON/OFF ratio (104), a large memory window (5.5 V), prolonged data retention (10 years), and reliable endurance (120 cycles). These findings highlight the potential of natural rubber as a promising material for eco-friendly resistive-switching random access memory applications.&#xD.