Susceptibility Of Semiconductors Research Articles

The Impurity Magnetic Susceptibility of Semiconductors in the Case of Direct Exchange Interaction in the Ising Model

The numerical simulation was applied to study the temperature dependence of the impurity magnetic susceptibility. The direct exchange interaction of the impurity magnetic moments randomly distributed in space was considered within the Ising model. When the temperature in a system decreases, the magnetic susceptibility behavior in this system ceases to comply with the Curie law, which is associated with the formation of a spin glass phase. It is shown that the expression of the preexponential factor in the formula for the direct exchange interaction considerably influences the temperature dependence of the magnetic susceptibility only in the case of ferromagnetic exchange.

Investigation of the Temperature Dependence of the Oscillation of the Magnetic Susceptibility in Semiconductors

The temperature dependence of the magnetic susceptibility oscillations semiconductors was considered in a quantizing magnetic field. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the de Haas-van Alphen effect in quantizing magnetic field was investigated. The influence of temperature on the de Haas-van Alphen with the help of free energy of electrons ( ) ( ) , χ HT in semiconductors was determined. Theoretical results of the mathematical simulation were compared with experimental data for bismuth. Using the proposed model of the low-temperature ( ) ( ) , χ HT , high-temperature oscillation magnetic susceptibility in semiconductors was calculated.

Electronic susceptibility in thin films and interfaces

We use tight-binding theory to investigate the electronic contribution to dielectric susceptibility in thin films and interfaces of covalent materials. We begin by describing the effects of an electric field on the elemental unit of a covalent material, the bond. Then, we show how the responses of individual bonds can be added up to obtain an estimate of the susceptibility of a bulk material. In doing so, we see that the polarization of a material can be viewed as arising from the transfer of charge from one side of the system to the other, and that this viewpoint leads naturally to a local definition of susceptibility in semiconductors. Using this concept, we examine dielectric susceptibility in thin films and interfaces, with a Si/Ge/Si heterostructure serving as an example. The interesting feature of thin films and interfaces is that they exhibit spatial variations in susceptibility, which we attribute to: (i) elastic distortions; (ii) the creation of bonds at an interface which are of a type not found in either bulk material; and (iii) the coupling of a bond to neighboring antibonds different than those in the bulk material. We then ask what error is introduced by neglecting these local variations when calculating the capacitance of a multilayer dielectric. For the Si/Ge/Si heterostructure, we find that effect (iii) introduces only small errors, even for very thin Ge layers, because the decrease in susceptibility on the Ge side of an interface is offset by the increase in susceptibility on the Si side. Similarly, effect (ii) is small because the polarizability of the Si–Ge bonds at the interface is very nearly the average of that for Si and Ge. On the other hand, effect (i) does lead to noticeable errors, but these errors can be removed almost entirely by choosing the permittivity of the Ge layer to be that of bulk Ge under the same state of strain as the Ge layer in the heterostructure. We conclude by interpreting recent experiments on “high-k” dielectrics in term of what we have learned here. [C. M. Perkins et al., Appl. Phys. Lett. 78, 2357 (2001); M. Koyama et al., Tech. Dig. Int. Electron Devices Meet., 459 (2001); W.-J. Qi et al., ibid., 145 (1999)].

Dielectric susceptibility of amorphous semiconductors

There is considerable difference between the changes in the diamagnetic and dielectric susceptibilities of semiconductors between their crystalline and amorphous phases. The authors use a bond orbital model, recently introduced by them, to explain the changes in the dielectric susceptibility of a model two-dimensional semiconductor with threefold coordination.

The non-linear susceptibility of the biexciton two-photon resonance

The results from three different theoretical approaches to the non-perturbative optical susceptibility of semiconductors near the biexciton resonance are analysed and the origin of their differences is elucidated.

Chemical-bond approach to the electric susceptibility of semiconductors

Chemical-bond approach to the electric susceptibility of semiconductors

Magnetophonon oscillations of the differential susceptibility of semiconductors in a quantizing magnetic field

A Green's-function method is used to calculate the shape of the magnetophonon-oscillation line of the differential susceptibility of a semiconductor in a quantizing magnetic field. The amplitude of the resonant peak is shown to be proportional to g2/3 (where g is the electron-phonon interaction constant), while the peak width is proportional to g4/3.

Van Vleck Paramagnetism and Bonding Parameters in Semiconductors

THE problem of evaluating the components of lattice magnetic susceptibility of semiconductors depends on knowledge of the density distribution and symmetry of the electron cloud in the polyatomic diamagnetic system.

Effect of Spin‐Magnetophonon Interaction on the Magnetic Susceptibility in Semiconductors

physica status solidi (b)Volume 12, Issue 2 p. K105-K108 Short Note Effect of Spin-Magnetophonon Interaction on the Magnetic Susceptibility in Semiconductors S. I. Uritsky, S. I. Uritsky Ural State University, SverdlovskSearch for more papers by this authorD. I. Sirota, D. I. Sirota Ural State University, SverdlovskSearch for more papers by this author S. I. Uritsky, S. I. Uritsky Ural State University, SverdlovskSearch for more papers by this authorD. I. Sirota, D. I. Sirota Ural State University, SverdlovskSearch for more papers by this author First published: 1965 https://doi.org/10.1002/pssb.19650120244Citations: 1AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume12, Issue21965Pages K105-K108 RelatedInformation

Theory of Lattice Magnetic Susceptibility of Semiconductors

The motion of a Bloch electron in a static uniform magnetic field is calculated exactly up to second order in the magnetic field in terms of the crystal momentum representation. The magnetic energy of an intrinsic semiconductor at zero temperature is calculated. An explicit expression of the lattice magnetic susceptibility, which consists of the Larmor-like diamagnetic term, the paramagnetic correction term, and additional terms, is presented. As a by-product, the Hamiltonian for the cyclotron motion of a free carrier is obtained in a form which is applicable for arbitrary symmetry and for bands with degeneracies.