Surface States Of Bi2Se3 Research Articles

Topological Surface State Evolution in Bi2Se3 via Surface Etching.

Topological insulators are materials that have an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi2Se3 is a prototypical topological insulator with a Dirac-cone surface state around Γ. Here, we present a controlled methodology to gradually remove Se atoms from the surface Se-Bi-Se-Bi-Se quintuple layers, eventually forming bilayer-Bi on top of the quintuple bulk. Our method allows us to track the topological surface state and confirm its robustness throughout the surface modification. Importantly, we report a relocation of the topological Dirac cone in both real space and momentum space as the top surface layer transitions from quintuple Se-Bi-Se-Bi-Se to bilayer-Bi. Additionally, charge transfer among the different surface layers is identified. Our study provides a precise method to manipulate surface configurations, allowing for the fine-tuning of the topological surface states in Bi2Se3, which represents a significant advancement toward nanoengineering of topological states.

Contribution of both bulk and surface states on photothermoelectric transport in epitaxial Bi2Se3 thin films

Probing the surface states in Bi2Se3 via electronic transport measurements is difficult due to the significantly larger numbers of bulk carriers. Herein, we report the contribution of both bulk and surface states on the measured photocurrent at room temperature and the electrical transport measurements at low temperatures in an epitaxial thin film of intrinsic Bi2Se3 capped with a high K dielectric, Al2O3. The measured photocurrent continuously increases when the gate voltage is swept toward the negative side from 10 to −10 V, indicating the movement of the Fermi level below the conduction band edge. Moreover, the contribution of the surface state conduction increases when the Fermi level moves inside the bandgap toward the Dirac point. Furthermore, the measured Seebeck coefficient (S) continuously increases with sweeping gate voltage from 10 to −10 V. Similar correlations of the photocurrent and S value with the gate voltage illustrate the contribution of the photothermoelectric effect due to the conduction of both bulk and surface states. Additionally, the ambipolar charge transport was observed in the electrical measurement at 32 K for the four-probe configuration. The ambipolar charge transport is possibly indicative of surface state transport.

Robust behavior and spin-texture stability of the topological surface state in Bi2Se3 upon deposition of gold

The Dirac point of a topological surface state (TSS) is protected against gapping by time-reversal symmetry. Conventional wisdom stipulates, therefore, that only through magnetisation may a TSS become gapped. However, non-magnetic gaps have now been demonstrated in Bi2Se3 systems doped with Mn or In, explained by hybridisation of the Dirac cone with induced impurity resonances. Recent photoemission experiments suggest that an analogous mechanism applies even when Bi2Se3 is surface dosed with Au. Here, we perform a systematic spin- and angle-resolved photoemission study of Au-dosed Bi2Se3. Although there are experimental conditions wherein the TSS appears gapped due to unfavourable photoemission matrix elements, our photon-energy-dependent spectra unambiguously demonstrate the robustness of the Dirac cone against high Au coverage. We further show how the spin textures of the TSS and its accompanying surface resonances remain qualitatively unchanged following Au deposition, and discuss the mechanism underlying the suppression of the spectral weight.

Visualization of optical polarization transfer to photoelectron spin vector emitted from a spin-orbit coupled surface state

Similar to light polarization that is selected by a superposition of optical basis, electron spin direction can be controlled through a superposition of spin basis. We investigate such a spin interference occurring in photoemission of the spin-orbit coupled surface state in Bi2Se3 by using spin- and angle-resolved photoemission spectroscopy combined with laser light source (laser-SARPES). Our laser-SARPES with three-dimensional spin detection and tunable laser polarization including elliptical and circular polarization enables us to directly visualize how the direction of the fully-polarized photoelectron spin changes according to the optical phase and orientation of the incident laser polarization. By this advantage of our laser-SARPES, we demonstrate that such optical information can be projected to the three-dimensional spin vector of the photoelectrons. Our results, therefore, present a novel spin-polarized electron source permitting us to optically control the pure spin state pointing to the arbitrary direction.

Anomalous Superconducting Proximity Effect in Bi2 Se3 /FeSe0.5 Te0.5 Thin-Film Heterojunctions.

The superconducting proximity effect (SPE) induces a superconductivity transition in otherwise non-superconducting thin films in proximity with a superconductor. The SPE usually occurs in real space and decays exponentially with film thickness. Herein, an abnormal SPE in a topological insulator (TI)/superconductor heterostructure is unveiled, which is attributed to the topologically protected surface state. Surprisingly, such abnormal SPE occurs in momentum space regardless of the TI film thickness, as long as the topological surface states are robust and form a continuous conduction loop. Combining transport measurements and scanning tunneling microscopy/spectroscopy techniques, the SPE in Bi2 Se3 /FeSe0.5 Te0.5 heterostructures is explored, where Bi2 Se3 is an ideal 3D topological insulator and FeSe0.5 Te0.5 a typical iron-based superconductor. As the thickness of the Bi2 Se3 thin film exceeds 400 nm, there still exists SPE-induced superconductivity on the surface of Bi2 Se3 thin film with a transition temperature Tc not less than 10 K. Such an extraordinary behavior is induced by the unique properties of topologically protected surface states of Bi2 Se3 . This research deepens the understanding of the important role of topologically protected surface states in the SPE.

Studies of surface states in Bi2Se3 induced by the BiSe substitution in the crystal subsurface structure

We present a systematic theoretical study of bismuth selenide electronic structure in the presence of spin-orbit interaction. It is confirmed that the inversion of Bi pz and Se pz states in the bulk band structure is induced by spin-orbit coupling. The energy gap in the bulk electronic structure is closed by pz states associated mainly with Bi atoms from the first quintuple layer. We elucidate the influence of Bi substitution in the fifth atomic layer on the local density of electronic states in the top quintuple layer. Finally, we describe how it develops into the additional p states in the surface electronic structure, which produce the triangular protrusion observed in Scanning Tunnelling Microscopy measurements and characteristic narrow features in Scanning Tunnelling Spectroscopy results.

Electron–phonon coupling in topological insulator Bi2Se3 thin films with different substrates

Broadband transient reflectivity traces were measured for Bi2Se3 thin films with various substrates via a 400 nm pump–white-light-probe setup. We have verified the existence of a second Dirac surface state in Bi2Se3 and qualitatively located it by properly analyzing the traces acquired at different probe wavelengths. Referring to the band structure of Bi2Se3, the relaxation mechanisms for photo-excited electrons with different energies are also revealed and studied. Our results show a second rise of the transient reflection signal at the time scale of several picoseconds. The types of substrate can also significantly affect the dynamics of the rising signal. This phenomenon is attributed to the effect of lattice heating and coherent phonon processes. The mechanism study in this work will benefit the fabrication of high-performance photonic devices based on topological insulators.

Electronic properties of GdxBi2−xSe3 single crystals analyzed by Shubnikov-de Haas oscillations

Magnetically doped topological insulators have been significantly researched for unlocking the nontrivial topological phases and the resultant potential applications for spintronics. We report the effect of antiferromagnetic order induced by Gd substitution on the electronic properties of GdxBi2−xSe3 single crystals by analyzing the Shubnikov-de Haas oscillations. Antiferromagnetic order of Gd ions affects the 2D surface state in Bi2Se3 and changes the effective mass and lifetime of charge carriers. These observations suggest a strong correlation of 2D surface electrons with the antiferromagnetic ordering, where the itinerant electrons are bound to the Gd ions to mediate the antiferromagnetic interaction.

Observation of Zeeman effect in topological surface state with distinct material dependence.

Manipulating the spins of the topological surface states represents an essential step towards exploring the exotic quantum states emerging from the time reversal symmetry breaking via magnetic doping or external magnetic fields. The latter case relies on the Zeeman effect and thereby we need to estimate the g-factor of the topological surface state precisely. Here, we report the direct observations of the Zeeman effect at the surfaces of Bi2Se3 and Sb2Te2Se by spectroscopic-imaging scanning tunnelling microscopy. The Zeeman shift of the zero mode Landau level is identified unambiguously by appropriately excluding the extrinsic effects arising from the nonlinearity in the band dispersion of the topological surface state and the spatially varying potential. Surprisingly, the g-factors of the topological surface states in Bi2Se3 and Sb2Te2Se are very different (+18 and −6, respectively). Such remarkable material dependence opens up a new route to control the spins of the topological surface states.

Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid

Dirac-like surface states on surfaces of topological insulators have a chiral spin structure with spin locked to momentum, which is interesting in physics and may also have important applications in spintronics. In this work, by measuring the tunable helicity-dependent photocurrent (HDP), we present an identification of the HDP from the Dirac-like surface states at room temperature. It turns out that the total HDP has two components, one from the Dirac-like surface states, and the other from the surface accumulation layer. These two components have opposite directions. The clear gate tuning of the electron density as well as the HDP signal indicates that the surface band bending and resulted surface accumulation are successfully modulated by the applied ionic liquid gate, which provides a promising way to the study of the Dirac-like surface states and also potential applications in spintronic devices.

Quasiparticle effects in the bulk and surface-state bands of Bi2Se3and Bi2Te3topological insulators

We investigate the bulk band structures and the surface states of Bi2Se3 and Bi2Te3 topological insulators using first-principles many-body perturbation theory based on the GW approximation. The quasiparticle self-energy corrections introduce significant changes to the bulk band structures, while their effect on the band gaps is opposite in the band-inversion regime compared to the usual situation without band inversion. Parametrized "scissors operators" derived from the bulk studies are then used to investigate the electronic structure of slab models which exhibit topologically protected surface states. The results including self-energy corrections reveal significant shifts of the Dirac points relative to the bulk bands and large gap openings resulting from the interactions between the surface states across the thin slab, both in agreement with experimental data.

Chiral Orbital-Angular Momentum in the Surface States ofBi2Se3

We performed angle-resolved photoemission (ARPES) experiments with circularly polarized light and first-principles density functional calculation with spin-orbit coupling to study surface states of a topological insulator Bi2Se3. We observed circular dichroism (CD) as large as 30% in the ARPES data with upper and lower Dirac cones showing opposite signs in CD. The observed CD is attributed to the existence of local orbital-angular momentum (OAM). First-principles calculation shows that OAM in the surface states is significant and is locked to the electron momentum in the opposite direction to the spin, forming chiral OAM states. Our finding opens a new possibility for strong light-induced spin-polarized current in surface states. We also provide a proof for local OAM origin of the CD in ARPES.

Effects of surface modification on the properties of topological surface states in Bi2Se3

The effects of surface modification on the topological surface states in Bi2Se3 have been studied using first-principles calculations. Although surface modification cannot change the topological order, however, the spin polarization, dispersion of topological surface bands and the position of Dirac points are altered. All the studied surface modifications can push Dirac cone upwards effectively. Bi-capped surface can attract the quantum well states into bulk band gap, forming new Dirac cone at M¯ point. Both Bi-capped and Se-removed surface can slightly enhance spin polarization of topological surface states, while flatten the energy dispersion of the topological surface bands above Dirac point.