The TiC/Ni composites with different CeO2 or CeO2@Ni content are fabricated by pressureless reactive sintering, and the CeO2@Ni particles are prepared by electroless plating technique. The results show that the continuous Ni layer is prepared on CeO2 particles, leading to the decrease of contact angle between CeO2 and Ni from about 116° to 65°. The relative density of composites with 1 wt% CeO2 increases from 85.79% to 96.45% by Ni layer on CeO2 particles. The CeO2 or CeO2@Ni particles exhibit no obvious influence on the microstructure of composites, and Ce atoms of CeO2 diffuse into TiC particles during the reactive sintering process. The mass gain of composite decreases from 7.4709 to 4.9075 mg cm−2 by addition of 1 wt% CeO2@Ni. The Ce‐doped in NiO and TiO2 would restrict the inward diffusion of O atoms and outward diffusion of Ni atoms, resulting in the improvement of oxidation resistance of composite. With the increase of CeO2@Ni content from 0 to 1 wt%, the surface specific resistance of composite decreases from 3.16 to 0.56 Ω cm2 at 800 °C due to the thinner oxide scale and lower bandgap of TiO2 by Ce doping.
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