Surface Photovoltage Research Articles

Static Organic p‐n Junctions in Photoelectrodes for Solar Ammonia Production with 86 % Internal Quantum Efficiency

AbstractFor photoelectrocatalytic cells, a limitation exists in finding appropriate photoelectrode configurations that couple efficient extraction of high‐energy electrons from absorbed photons and selective catalysis. Here we report an organic p‐n junction approach to fabricate molecular photoelectrodes for conversion of solar energy and nitrate into valuable ammonia product. Solar irradiation of the photoelectrode generates charge‐separated states with electrons and holes spatially separated at the n‐type and p‐type components, as revealed by surface photovoltage mapping, at a quantum yield of 90 %. The high‐flux photogenerated electrons are rapidly transferred to the catalyst for solar ammonia production from nitrate reduction at an external quantum efficiency (EQE) and an internal quantum efficiency (IQE) of 57 % and 86 %, respectively. Time‐resolved spectroscopic studies reveal that the large IQE originates from the combined high efficiencies for photoelectron generation, catalyst activation and dark catalysis. In a flow‐cell setup coupled with a silicon solar cell, the photoelectrode without bias generates photocurrent of 57 mA cm−2 and ammonia at an EQE of 52 %.

Band Alignment and Surface Photo-Voltage Analysis of C-Si/Siox/Poly-Silicon Passivating-Contact Stacks Through X-Ray Photoelectron Spectroscopy.

Ultrathin SiOx layers and c-Si/SiOx interfaces find application in tunnel-oxide passivated contacts (TOPcon) for high-efficiency silicon solar cells. Here, we investigate their detailed microscopic properties, with specific attention for the case of c-Si(100) substrates, capped either by p-type or n-type poly-silicon layers [c-Si/SiOx/poly-Si (p+) or c-Si/SiOx/poly-Si (n+)]. Our focus is on the effects of the substrate preparation conditions (either by a dry-plasma or wet SiOx process) and the high-temperature annealing step (as required for the poly-Si crystallization) on the SiOx stoichiometry and its microscopic structure. Through advanced photoemission techniques, we find a clearly decreased valence band offset between the c-Si and SiOx (from 4.5 eV to 4.15 eV) when comparing the dry SiOx with the wet SiOx process, independent of the SiOx film thickness, but correlating with the relative fraction of sub-stochiometric Si states. We lastly examine the magnitude of band-bending of the contact structure through controlled in-situ exposure to light of the surfaces and subsequent tracking of core and valence band levels via a surface photovoltage and a junction photo-voltage (JPV) effect. By analyzing this JPV effect qualitatively, we find it to be proportional to the expected quasi fermi level splitting within the c-Si wafer.

Perovskite/Silicon Tandem Solar Cells Above 30% Conversion Efficiency on Submicron-Sized Textured Czochralski-Silicon Bottom Cells with Improved Hole-Transport Layers.

In perovskite/silicon tandem solar cells, the utilization of silicon heterojunction (SHJ) solar cells as bottom cells is one of the most promising concepts. Here, we present optimization strategies for the top cell processing and their integration into SHJ bottom cells based on industrial Czochralski (Cz)-Si wafers of 140 μm thickness. We show that combining the self-assembled monolayer [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) with an additional phosphonic acid (PA) with different functional groups, can improve film formation when used as a hole transport layer improving wettability, minimizing shunt fraction and reducing nonradiative losses at the buried interface. Transient surface photovoltage and transient photoluminescence measurements confirm that the combined Me-4PACz/PA layer has similar charge transport properties to Me-4PACz alone. Moreover, this work demonstrates the potential for thin, double-side submicron-sized textured industry-relevant silicon bottom cells yielding a high accumulated short-circuit current density of 40.2 mA/cm2 and reaching a stabilized power conversion efficiency of >30%. This work paves the way toward industry-compatible, highly efficient tandem cells based on a production-compatible SHJ bottom cell.

Disentangling the Optoelectronic Behavior of Lead Iodide Governed by Two-Dimensional Electron Confinement.

We present a joint experimental and theoretical study for complete spectroscopic characterization and optoelectronic properties of lead iodide. Experimentally, we combine X-ray diffraction experiments to elucidate the structure with photoelectron spectroscopy to explore its electronic structure. Computationally, simulations are performed in the frame of density functional theory. We show that PbI2 presents a two-dimensional layered structure and exhibits a large transient photocurrent effect under visible light illumination, which are compatible with the surface photovoltage scenario. The transient photocurrent has an extremely long lifetime: when the sample is lightened with visible light, it shows very long relaxation times and, consequently, huge charge carrier diffusion lengths. We explain this anomalous behavior with the slow carrier mobility of holes and electrons caused by the 2D electron confinement in the layered material. Our results can be used as a simple model for understanding the optoelectronic properties of more complex 2D hybrid perovskites.

Enhanced piezocatalytic RhB degradation with ZnSnO3 Nanocube-modified Bi4Ti3O12 composite catalyst by harnessing ultrasonic energy

With the increasing demand for effective methods to address environmental pollution, piezocatalysis has emerged as a promising approach for pollutant degradation under mechanical energy. However, the development of highly efficient piezocatalytic materials remains a challenge. This study aimed to increase the piezocatalytic activity of bismuth titanate (Bi4Ti3O12) by modifying it with zinc stannate (ZnSnO3) nanocubes. The composite catalysts were synthesized using a straightforward deposition and calcination process. The calcination process ensured the tight adhesion of ZnSnO3 nanocubes to the Bi4Ti3O12 surface, while facilitating strong interactions between ZnSnO3 and Bi4Ti3O12, which enhanced electron transfer and heterojunction structure formation. Band structure analysis indicated that Bi4Ti3O12 has higher conduction band and valence band potentials than ZnSnO3, forming a type-II heterojunction. Bi4Ti3O12 possesses a higher Fermi level than ZnSnO3, resulting in interfacial electron drift and formation of a built-in electric field, which further promotes the directional transfer and separation efficiency of charge carriers within the composite catalyst. This hypothesis was confirmed by surface photovoltage spectroscopy, piezoelectric current response, and electrochemical analysis. Consequently, the ZnSnO3/Bi4Ti3O12 composite exhibited significantly improved piezocatalytic performance in RhB degradation, achieving a degradation efficiency of 80 % within 90 min under ultrasonic vibration. The degradation rate of the optimal sample was 8.2 times that of Bi4Ti3O12 and 6.3 times that of ZnSnO3. Additionally, experiments to detect reactive species were conducted to elucidate the mechanism behind the piezocatalytic RhB degradation. Holes and hydroxyl radicals were the main reactive species. This study may offer new insights into the design of efficient piezocatalytic materials.

Defect characterization and prospective applications of Cs3Bi2I9 perovskite: Insights from surface photovoltage spectroscopy

Defect characterization and prospective applications of Cs3Bi2I9 perovskite: Insights from surface photovoltage spectroscopy

Charge Transfer Kinetics and Thermodynamics Control the Energy Conversion Efficiency of a Gallium Phosphide Solar Hydrogen Photocathode.

P-type gallium phosphide (GaP) photocathodes for hydrogen evolution from water have a theoretical energy conversion efficiency of 12% based on the 2.4 eV optical band gap of the material. The performance of actual GaP photocathodes is much lower, for reasons not entirely clear. Here we use vibrating Kelvin probe surface photovoltage (VKP-SPV), open circuit potential (OCP) measurements, and photoelectrochemical (PEC) experiments to evaluate the kinetic and thermodynamic factors that control energy conversion with GaP photocathodes for the hydrogen evolution reaction (HER). We find that the open circuit photovoltage of the bare GaP-H2O junction is limited by recombination at surface states and that an CdS overlayer increases both photovoltage and photocurrent due to formation of a n-p-junction. An optimized GaP/CdS/Pt photocathode drives hydrogen evolution with a quantum efficiency of 62% at 400 nm and 0.0 V RHE and an open circuit photovoltage of 0.43 V at 250 mW cm-2. The Pt cocatalyst increases the photocurrent due to improve HER kinetics but reduces the photovoltage by promoting recombination. Added hydrogen or oxygen gas raise or lower the photovoltage by modifying the electrostatic barrier (band bending) in GaP. This shows that the GaP/CdS junction is not "buried" but behaves like a Schottky junction whose charge separating properties are controlled by the electrochemical potential of the electrolyte. The dynamic junction properties need to be considered in the design of optimized hydrogen evolution photoelectrodes and photocatalysts. Additionally, the work reveals that PEC or OCP measurements tend to underestimate the photovoltage because they do not account for changes in the electrochemical potential at the electrode-liquid contact. In contrast, the VKP-SPV method provides the open circuit photovoltage value directly. By combining the photovoltage data with OCP data, the minority carrier electrochemical potential at the electrode-liquid contact can be measured in a contactless way. This provides an improved understanding of illuminated photoelectrodes for the production of solar fuels.

In-Situ comparative study of photo-induced charge behavior in single-perovskite Cs3Bi2Br9 and double-perovskite Cs2AgBiBr6

While organic-inorganic lead halide perovskites excel in optoelectronic applications, their use is limited by toxicity and degradation. Consequently, lead-free alternatives like Cs2AgBiBr6, offering greater stability and diverse applications, have been investigated. However, the fundamental structural, optical, and electronic properties of Cs2AgBiBr6 remain insufficiently understood. In this study, we compared the exciton dynamics and photo-induced charge separation in Cs3Bi2Br9 and Cs2AgBiBr6 films using in-situ surface techniques. Both materials display similar surface photovoltage (SPV) peaks in the 450–500 nm range, supporting the hypothesis of Bi 6s-6p orbital transitions in distorted [BiBr6]3− structures. Although many theories propose the presence of self-trapped excitons (STE) in bismuth-based perovskites, sufficient evidence has been lacking. Our observation of a significant redshift in the SPV peak compared to the band edge absorption peak supports STE hypothesis, with Cs2AgBiBr6 showing a more pronounced redshift due to its more complex electronic structure and stronger electron-phonon coupling. Additionally, we observed that Cs2AgBiBr6 exhibits superior charge separation efficiency compared to Cs3Bi2Br9. Notably, Cs2AgBiBr6 shows significantly shorter rise times, indicating more rapid photogenerated charge separation. However, both materials exhibit similar fall times, suggesting comparable charge recombination rates. Light-chopping-frequency dependent SPV measurements further reveal that Cs2AgBiBr6 has a higher charge separation rate than Cs3Bi2Br9. These findings underscore the potential of bismuth-based perovskites for optoelectronic applications and highlight the importance of a comprehensive understanding of their structure-property relationships.

Growth of Ba2CoWO6 single crystals and their magnetic, thermodynamic and electronic properties

This study explores the bulk crystal growth, structural characterization, and physical property measurements of the cubic double perovskite Ba2CoWO6(BCWO). In BCWO, Co2+ions form a face-centred cubic lattice with non-distorted cobalt octahedra. The compound exhibits long-range antiferromagnetic order belowTN= 14 K. Magnetization data indicated a slight anisotropy along with a spin-flop transition at 10 kOe, a saturation field of 310 kOe and an ordered moment of 2.17µB atT= 1.6 K. Heat capacity measurements indicate an effectivej= 1/2 ground state configuration, resulting from the combined effects of the crystal electric field and spin-orbit interaction. Surface photovoltage analysis reveals two optical gaps in the UV-Visible region, suggesting potential applications in photocatalysis and photovoltaics. The magnetic and optical properties highlight the significant role of orbital contributions within BCWO, indicating various other potential applications.

Modulating long-lived ultrafast charge carrier recombination in type-I MoS2/CdS photocatalyst achieving optimal H2 evolution

Maximizing charge carrier efficiency is crucial for enhancing photocatalyst systems’ capacity to achieve outstanding photocatalytic hydrogen evolution (PHE). Herein, an I-type CdS nanorod/MoS2 nanoflowers heterojunction was successfully fabricated and kinetic transportof charge carriers was being investigated with electron paramagnetic resonance (EPR) analysis, surface photovoltage (SPV), femtosecond transient absorption (fs-TA) measurements and related density functional theory (DFT) calculations, etc. The in-situ dynamic study conducted using fs-TA reveals that the optimal CdS/MoS2 ratio (3CM), when excited by a 380 nm pump, exhibits a quasi-discrete exciton hot carrier cooling time of 0.35 picoseconds (ps), with interfacial electron transfer occurring in approximately 21.90 ps. In this context, MoS2 enhances the efficiency of interfacial electron transfer by passivating surface shallow trapped states, which were observed to be only 8.62 ps in pure CdS. Moreover, the kinetic coupling of long-lived charge separation (approximately 4440 ps) within the 3CM heterojunction, across various ratios of CdS/MoS2, is identified as a key factor in enhancing visible-light-driven PHE. This enhancement achieves remarkable rates of up to 31.094 mmol h-1 g-1, surpassing the performance of physically mixed CdS-MoS2 without chemical bonding by an impressive factor of 31. Our findings highlight the importance of tailored cocatalyst ratios in modulating the charge recombination for enhanced photocatalytic activity.

Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures

The performance of devices made from III-V compound semiconductors relies heavily on their surface and interface properties. The InAsP/InP material system is recently gaining interest due to its suitability for the next generation of long-haul classical and quantum communication applications. Researchers are studying how surface and interface properties affect the efficiency of the device and concludes that the epitaxial growth conditions responsible for creating surface and interface states require further improvement. To address this, we have studied the effect of the top (cap) layer and post-growth on-site hydride passivation on the properties of InAsP/InP hetero-structures grown using metal-organic vapor phase epitaxy technique. The flow rate and flux ratios of the hydrides significantly affect the surface reaction rates and gas-phase diffusion coefficients, which in turn impact the As↔P exchange mechanisms. Our findings suggest that post-growth on-site arsine passivation encourages the As↔P substitutions at the vicinity of the desorption sites of phosphorus, leading to the arsenic-rich surface of InAsP with the diffused hetero-interfaces. The activation energy for such As↔P exchange reaction mechanism is evaluated as ∼ (1.4 ± 0.3) eV. On the other hand, it has been observed that the thin cap layer of InP protects the surface of the InAsP epilayer and thereby preserving the sharp interface. Further, surface photovoltage and photoluminescence spectroscopy is employed to examine the role of the diffused and sharp interface of InAsP/InP hetero-structures in charge carrier transport, their redistribution and recombination process. Our analysis of the energy transitions occurring in the surface photovoltage and photoluminescence spectrum reveal that the energy band alignment and the subsequent charge carrier redistribution processes is influenced by the surface and interface states. These changes in the surface photovoltage phase spectra of InAsP/InP system also support the role of surface and interface states in the generation and separation of the charge carriers. The study provides insights into the effects of As↔P exchange on surface and interfacial quality, highlighting the implications for optoelectronic device development using InAsP/InP material system.

Influence of SnWO4, SnW3O9, and WO3 Phases in Tin Tungstate Films on Photoelectrochemical Water Oxidation.

An essential step toward enabling the production of renewable and cost-efficient fuels is an improved understanding of the performance of energy conversion materials. In recent years, there has been growing interest in ternary metal oxides. Particularly, α-SnWO4 exhibited promising properties for application to photoelectrochemical (PEC) water splitting. However, the number of corresponding studies remains limited, and a deeper understanding of the physical and chemical processes in α-SnWO4 is necessary. To date, charge-carrier generation, separation, and transfer have not been exhaustively studied for SnWO4-based photoelectrodes. All of these processes depend on the phase composition, not only α-SnWO4 but also on the related phases SnW3O9 and WO3, as well as on their spatial distributions resulting from the coating synthesis. In the present work, these processes in different phases of tin tungstate films were investigated by transient surface photovoltage (TSPV) spectroscopy to complement the analysis of the applicability of α-SnWO4 thin films for practical PEC oxygen evolution. Pure α-SnWO4 films exhibit higher photoactivities than those of films containing secondary SnW3O9 and WO3 phases due to the higher recombination of charge carriers when these phases are present.

One‐Step Aerosol Synthesis of Thiocyanate Passivated Hybrid Perovskite Microcrystals: Impact of (Pseudo‐)Halide Additives on Crystallization and Access to a Novel Binary Model

AbstractHybrid Perovskite materials have gone through an astonishing development due to their unique optoelectronic behavior, leading to the creation of a wide range of synthetic strategies. As the materials’ surface is found to play a crucial role with respect to the properties, e.g. hydration, stability and carrier mobilities, considerable efforts have been made to optimize the surface through various approaches. Especially the passivation of the perovskite surface attracted a lot of attention in this field, often resulting in more complex, multi‐step synthetic processes. In this study, a simple one‐step aerosol‐assisted synthetic approach is presented to obtain thiocyanate (SCN) passivated single‐crystal MAPbBr3 microcrystals. To elucidate the role of the additive in the crystallization process, mixed (pseudo‐)halide precursors are systematically investigated. The as processed, passivated microcrystals exhibit enhanced stability and charge carrier lifetimes. Additionally, a decrease in surface photovoltage, attributed to the presence of the SCN additive, is observed. Furthermore, the aerosol process is further developed resulting in a novel binary system containing MAPbBr3‐SCN perovskite microcrystals and Au nanostructures. This system serves as a promising model for further investigations into potential interactions between plasmonic and semiconducting materials, with initial results indicating prolonged charge carrier lifetimes.

An alternative chlorine-assisted optimization of CdS/Sb2Se3 solar cells: Towards understanding of chlorine incorporation mechanism

The current strategies in the development of Sb2Se3 thin film solar cells involve fabrication and optimization of superstrate and substrate device architectures, with the preferable choice for TiO2 and CdS heterojunction layers. For CdS-based superstrate cells, several studies reported the necessity to apply CdCl2 or other metal halide-based post-deposition treatment (PDT), highlighting improvement of CdS/Sb2Se3 device efficiency. However, the need, effect, and mechanism of such PDT are very often not described. Additionally, the fact that many groups have not succeeded in demonstrating its benefits suggests that this strategy is not straightforward, requiring a deeper understanding towards a more unified concept. The present study proposes an alternative approach to the challenging CdCl2 PDT of CdS in CdS/Sb2Se3 device, involving controllable Cl incorporation in CdS films by systematically varying the concentration of NH4Cl in the CBD precursor solution from 1 to 8 mM. Structural and electrical characterizations are correlated with advanced measurements of Scanning Kelvin Probe, surface photovoltage, and atomic force microscopy to understand the impact of Cl incorporation on the properties of CdS films and CdS/Sb2Se3 devices. The validity of Cl incorporation in the CdS lattice and interdiffusion processes at the CdS-Sb2Se3 interface is confirmed by secondary ion mass spectrometry analysis. It is demonstrated that incorporation of 1 mM of NH4Cl, as a Cl source in CBD CdS, can boost the PCE of CdS/Sb2Se3 by ∼20 %. With this approach, we offer new perspectives on the optimization methodology for Cl-based CdS/Sb2Se3 device processing and complementary understanding of the physiochemistry behind these processes.

Preparation and surface photovoltage regulation of (Cs/MA)3Bi2I9 double A-site cation mixed-phase perovskite nanocrystal structure

This paper reports a novel (Cs/MA)3Bi2I9 double A-site cations perovskite nanostructured photoelectrode and its fabrication method, utilizing a stoichiometric dissolution of MAI, CsI, and BiI3 solutes in DMF solvent. The (Cs/MA)3Bi2I9 perovskite electrodes are then prepared on FTO glass substrates using the spin-coating technique. Furthermore, by adjusting the molar ratio x of Cs+ to the total moles of Cs+ and MA+ in precursor, the morphology and size of the (Cs/MA)3Bi2I9 perovskite nanostructures can be effectively modulated, thereby tuning their photoelectrical properties. (Cs/MA)3Bi2I9 consists of two phases: (CsMA)3Bi2I9 formed by substituting Cs+ with MA+, and (MACs)3Bi2I9 formed by substituting MA+ with Cs+. The surface photovoltage performance of the (Cs/MA)3Bi2I9 perovskites prepared at different x values surpasses that of pure MA3Bi2I9 and Cs3Bi2I9 bismuth-based perovskites. Particularly noteworthy is that at x = 0.6, the surface photovoltage performance of (Cs/MA)3Bi2I9 perovskite is nearly double that of the pure MA3Bi2I9 and Cs3Bi2I9 perovskites.

In-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)

High purity semi-insulating (HPSI) 4H-SiC wafers from different vendors have been studied by surface photovoltage spectroscopy (SPV). It is demonstrated that the surface photovoltage signal height can be used to discriminate between non-compensated and compensated material, and that the SPV signal is also proportional to the bulk resistivity, at least for non-compensated 4H-SiC material.

Revisiting Sub-Band Gap Emission Mechanism in 2D Halide Perovskites: The Role of Defect States.

Understanding the sub-band gap luminescence in Ruddlesden-Popper 2D metal halide hybrid perovskites (2D HaPs) is essential for efficient charge injection and collection in optoelectronic devices. Still, its origins are still under debate with respect to the role of self-trapped excitons or radiative recombination via defect states. In this study, we characterized charge separation, recombination, and transport in single crystals, exfoliated layers, and polycrystalline thin films of butylammonium lead iodide (BA2PbI4), one of the most prominent 2D HaPs. We combined complementary defect- and exciton-sensitive methods such as photoluminescence (PL) spectroscopy, modulated and time-resolved surface photovoltage (SPV) spectroscopy, constant final state photoelectron yield spectroscopy (CFSYS), and constant light-induced magneto transport (CLIMAT), to demonstrate striking differences between charge separation induced by dissociation of excitons and by excitation of mobile charge carriers from defect states. Our results suggest that the broad sub-band gap emission in BA2PbI4 and other 2D HaPs is caused by radiative recombination via defect states (shallow as well as midgap states) rather than self-trapped excitons. Density functional theory (DFT) results show that common defects can readily occur and produce an energetic profile that agrees well with the experimental results. The DFT results suggest that the formation of iodine interstitials is the initial process leading to degradation, responsible for the emergence of midgap states, and that defect engineering will play a key role in enhancing the optoelectronic properties of 2D HaPs in the future.

CdS/g-C3N5 for heterogeneous catalytic degradation of hazardous pollutants

CdS, as an important photocatalytic degradation material, exhibits certain limitations. In our study, carbon nitride/cadmium sulfide (C3N5/CdS) nanocomposites were synthesized via an in-situ method, and the crystalline structure, composition, and morphology of the hybrid samples were evaluated using various techniques. The development of the Z-scheme heterojunction in the C3N5/CdS composite photocatalyst facilitated more effective separation of photogenerated charges, resulting in higher photocatalytic degradation efficiency. Under visible light irradiation at 425 nm, the composite with a 1:1 ratio exhibited the best degradation performance, achieving degradation rates of 93.8% for methyl orange solution and 96.8% for rhodamine B solution. Additionally, the introduction of C3N5 significantly reduced the photocorrosion of CdS. These experimental results were confirmed by fluorescence analysis, surface photovoltage (SPV) measurements, electrochemical tests, etc.

PAN-assisted preparation of Bi2MoO6 with enhanced photocatalytic CO2 reduction performance

In this study, to improve photocatalytic CO2 reduction efficiency of Bi2MoO6-based photocatalysts, Bi2MoO6 (BMO) was synthesized via a solvothermal method with the assistance of polyacrylonitrile (PAN). Scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were utilized to evaluate the microstructures, phases, and elemental compositions of the samples. Additionally, the separation and migration efficiency of photogenerated charge pairs during the photocatalytic process were analyzed in detail using surface photovoltage spectroscopy (SPS), photoluminescence spectrum (PL), transient photocurrent density (TPR), and electrochemical impedance spectroscopy (EIS). In comparison with the reference sample, the specific surface area of 2 % BMO (mass ratios of PAN/Bi(NO3)3·5H2O is 2 %) has been increased to 39.6 m2/g, which increases by 0.9 times compared to the reference sample. The successful introduction of oxygen vacancies (OVs) in Bi2MoO6 was confirmed by low-temperature electron paramagnetic resonance (EPR) and X-ray photoelectron spectroscopy (XPS), and suitable OVs is favorable for separation and migration of the photogenerated carriers. The experimental results indicate that the separation efficiency of photogenerated carriers in the PAN-BMO photocatalyst is significantly boosted in contrast to the reference sample. Furthermore, all photocatalysts exhibit higher photocatalytic CO2 reduction activity than the reference sample. It is noteworthy that the 2 % BMO sample shows the highest photocatalytic CO2 reduction activity, and the average photocatalytic CO2 reduction yield over the 2 % BMO reaches 2.16 μmol g−1 h−1, which is 2.25 times higher than that on the reference sample (0.96 μmol g−1 h−1). In view of the findings, photocatalytic CO2 reduction mechanism for BMO with OVs was rationally proposed.

Designing Robust CdS Nanostructures for Superior Photostability and Enhanced Photocatalytic Degradation of Organic Pollutants

AbstractTill date it is a great challenge to synthesize CdS photocatalyst with a high stability. In this study, a stable CdS photocatalyst was successfully synthesized by a simple, cost‐effective hydrothermal route via cadmium acetate and thiourea as Cd and S precursors, respectively. The effect of different processing times (8 h and 24 h) and molar ratios on the photocatalytic activity and stability were mainly investigated. The samples were characterized in detail by XRD, FT‐IR, XPS, UV‐vis DRS, Photolummiscence spectroscopy and Surface photovoltage. The photocatalytic activity of the as‐obtained nanostructures was examined for methylene blue (MB) dye degradation under visible light irradiation (λ≥420 nm). After 70 min of irradiation, nearly 82 % of MB was degraded by CdS nanostructures, display an improved photocatalytic activity for MB degradation with an apparent rate constant (k) of 0.019 min−1. Additionally, CdS nanostructures sustained a good photostability after five consecutive cycles. The higher photocatalytic activity of CdS nanostructure is attributed to an efficient separation of photogenerated electron‐hole pairs stimulated by its optimal molar ratio, optimal temperature and surface morphology. Our synthesized stable nanostructures have potential for dye contaminated waste‐water treatment.