SnS2 Surface Research Articles

Optimizing the Microenvironment in Solid Polymer Electrolytes by Anion Vacancy Coupled with Carbon Dots.

The practical application of solid polymer electrolyte is hindered by the small transference number of Li+, low ionic conductivity and poor interfacial stability, which are seriously determined by the microenvironment in polymer electrolyte. The introduction of functional fillers is an effective solution to these problems. In this work, based on density functional theory (DFT) calculations, it is demonstrated that the anion vacancy of filler can anchor anions of lithium salt, thereby significantly increasing the transference number of Li+ in the electrolyte. Therefore, flower-like SnS2-based filler with abundant sulfur vacancies is prepared under the regulation of functionalized carbon dots (CDs). It is worth mentioning that the CDs dotted on the surface of SnS2 have rich organic functional groups, which can serve as the bridging agent to enhance the compatibility of filler and polymer, leading to superior mechanical performance and fast ion transport pathway. Additionally, the in situ formed Li2S/Li3N at the interface of Li metal and electrolyte facilitate the fast Li+ diffusion and uniform Li deposition, effectively mitigating the growth of lithium dendrites. As a result, the assembled lithium metal batteries exhibit excellent cycling stability, reflecting the superiority of the carbon dots derived vacancy-rich inorganic filler modification strategy.

Optimizing the Microenvironment in Solid Polymer Electrolytes by Anion Vacancy Coupled with Carbon Dots

The practical application of solid polymer electrolyte is hindered by the small transference number of Li+, low ionic conductivity and poor interfacial stability, which are seriously determined by the microenvironment in polymer electrolyte. The introduction of functional fillers is an effective solution to these problems. In this work, based on density functional theory (DFT) calculations, it is demonstrated that the anion vacancy of filler can anchor anions of lithium salt, thereby significantly increasing the transference number of Li+ in the electrolyte. Therefore, flower‐like SnS2‐based filler with abundant sulfur vacancies is prepared under the regulation of functionalized carbon dots (CDs). It is worth mentioning that the CDs dotted on the surface of SnS2 have rich organic functional groups, which can serve as the bridging agent to enhance the compatibility of filler and polymer, leading to superior mechanical performance and fast ion transport pathway. Additionally, the in‐situ formed Li2S/Li3N at the interface of Li metal and electrolyte facilitate the fast Li+ diffusion and uniform Li deposition, effectively mitigating the growth of lithium dendrites. As a result, the assembled lithium metal batteries exhibit excellent cycling stability, reflecting the superiority of the carbon dots derived vacancy‐rich inorganic filler modification strategy.

Pt-modified nanosheet-assembled SnS2 hollow microspheres for low temperature NO2 sensors

The three-dimensional (3D) microstructures assembled by nanomaterials have attracted great attention due to their unique hierarchical structure and large surface area. In this study, the hierarchical nanosheets-assembled SnS2 hollow microspheres with an average diameter of 6.1 μm were synthesized via a facile hydrothermal method. Then Pt nanoparticles were deposited on the surface of SnS2 to form Pt/SnS2 nanocomposites using the in-situ reduction method. Compared with pristine SnS2-based sensors, the Pt/SnS2 sensors exhibited improved gas-sensing performances to NO2 gas, including higher sensitivity, shorter response time, and better selectivity. The superior sensing performance can be ascribed to the Schottky junction created between Pt and SnS2, along with the catalytic effect of Pt. Moreover, the adsorption energy of SnS2 and Pt-modified SnS2 for NO2 molecules was calculated using first principles based on density functional theory (DFT). The Pt modification can enhance the interaction of NO2 with the SnS2 surface, which is favorable for improving the gas-sensing properties. This work provides novel hierarchical SnS2 microspheres based gas sensors for NO2 detection.

Enhanced response characteristics of NO2 gas sensor based on ultrathin SnS2 nanoplates: Experimental and DFT study

Layered-metal dichalcogenides with extraordinary characteristics of vast surface area, tunable bandgap and superior adsorption capability enable the potential for application in gas sensors. However, the synthesis of effective material for enhanced response performance remains a challenge. Herein, we exploited a fascinating sensitivity and selectivity towards NO2 gas detection using SnS2 nanoflakes prepared via the hydrothermal method. SnS2 nanoflakes with a thickness of 25 nm and an average diameter of approximately 500 nm show the potential for the detection of NO2 gas at low concentrations of ppb levels. The sensing properties of the SnS2 sensors were investigated for different concentrations of NO2 at various operating temperatures. The sensor exhibits the highest gas-sensing response of 161 at 250 οC upon exposure to 5 ppm of NO2 gas with fast response and recovery times. In addition, the sensor shows excellent selectivity with a low detection limit of ppb level. The electronic structure and gas-sensing mechanism are elucidated via finding density of states, charge density, and band structure based on DFT study which is calculated by the Vienna ab-initio simulation package (VASP). The considerable small adsorption energy reveals a physisorption of the NO2 molecules on the SnS2 surface (-0.174 eV), indicating the SnS2 nanoflakes are intriguing candidates for the speedy detection of NO2 gas.

Photogating enhanced photodetectors dominated by rubrene nanodots modified SnS2 films

The hybrid-induced photogating effect is considered as an effective way for photoconductance modulating in low-dimensional photodetectors. Besides, through constructing the local photogate vertical heterostructures on two-dimensional SnS2 surface can significantly increase its photoconductive gain. However, the potential of this photogain mechanism for SnS2 films has not yet been revealed in practical photodetection devices. To investigate its special advantages on promoting the optical-sensing activity, the high-quality SnS2 films with discrete, micro-area, and uniform rubrene-nanodots modification have been prepared. Benefit from the local interfacial photogating effect induced by hole trap states by rubrene-nanodots, the light-absorption and carrier-excitation efficiencies were significantly enhanced. Afterwards, the high-performance photodetector was designed based on the photogate vertical heterostructures of rubrene-nanodots/SnS2, which demonstrated an enhanced photoelectric response to 1064 nm light. Note that the maximum photocurrent density, photoresponsivity, and photodetectivity can reach up to 0.389 mA cm−2, 388.71 mA W−1, and 1.13 × 1010 Jones, respectively. Importantly, the optimal band-structure offsets accelerated the localized hole transfer from SnS2 film to rubrene-nanodots. The trapped holes in rubrene-nanodots induced an enhanced interface gating effect, which may help to modulate the number and lifetime of excess electrons under light illuminations. These superior features make the newly-developed photodetector be suitable for future multifunctional photodetection applications.

SnS2/MoS2 van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect.

Photoresponsivity is a fundamental parameter used to quantify the ability of photoelectric conversion of a photodetector device. High-responsivity photodetectors are essential for numerous optoelectronic applications. Due to the strong light-matter interactions and the high carrier mobility, two-dimensional (2D) materials are promising candidates for the next-generation photodetectors. However, poor light absorption, lack of photoconductive gain, and the interfacial recombination lead to the relatively low responsivity of 2D photodetectors. The photogating effect, which extends the lifetime of photoexcited carriers, provides a simple approach to enhance responsivity in photodetector devices. Here, the O2 plasma treatment introduced surface traps on the SnS2 surface, leading to a gate-tunable photogating effect in SnS2/MoS2 heterojunctions. The heterojunction device exhibits an ultrahigh responsibility of up to 28 A/W. Moreover, the photodetector possesses a wide spectral photoresponse spanning from 300 to 1100 nm and a high specific detectivity (D*) of 4 × 1011 Jones under a 532 nm laser at VDS = 1 V. These results demonstrate that O2 plasma treatment is an efficient and simple avenue to achieve photogating effects, which can be employed to enhance the performance of van der Waals heterostructure photodetector devices and make them suitable for future integration into advanced electronic and optoelectronic systems.

Enhancing the hydrogen evolution reaction by group IIIA-VIA elements doping in SnS2 basal plane

Tin disulfide (SnS2) − a post-transition metal dichalcogenide − is a promising non-precious metal catalyst for the hydrogen evolution reaction (HER). However, the practical application of SnS2 for electrocatalytic HER is hampered by its poor electrical conductivity and catalytic performance at the basal plane. Herein, by doping 14 main-group elements on the S-defective SnS2 monolayer, the most promising SnS2-based catalysts for the HER are screened through density functional theory (DFT) calculations. Interestingly, the Sb/Ga atoms anchored on the S-defective SnS2 basal plane are judged to possess excellent HER performance, yielding almost nearly zero Δ GH (Δ GH = −0.07 and −0.178 eV, respectively), which is even better than that of platinum (Pt) catalysts. Based on the density of states (DOS), the improved catalytic performance is attributed to the introduction of Sb/Ga atoms, which enhance the conductivity of the pristine SnS2 surface and provide unoccupied states near the Fermi energy level, effectively reducing the energy barrier for charge transfer between the H radical and the M@ SnS2 surface. It has also been confirmed by an investigation of the electronic properties resulting in the HER activity improvement, including the crystal orbital Hamiltonian population (COHP), the Bader charge, and the charge difference density (CDD). This work reveals a promising strategy to activate the SnS2 basal plane for HER.

Single-atom Ce targeted regulation SnS/SnS2 heterojunction for sensitive and stable room-temperature ppb-level gas sensor

Metal sulfide-based gas sensors have the advantage of high sensitivity at room temperature, enabling high integration and low power consumption. However, a trade-off between low baseline resistance and good long-term stability at room temperature still needs to be addressed. Therefore, a single-atom Ce-targeted regulation strategy for p-SnS/n-SnS2 was proposed. By doping different amounts of Ce, the amount and size of SnS quantum dots on the surface of SnS2 can be regulated. Furthermore, Sn-S-Ce bonds are formed by combining single-atom Ce with SnS, which effectively hinders the growth and oxidation of SnS quantum dots, as evidenced by STEM, XPS, DFT, FTIR and EAXFS methods. Due to the unique energy band structure of p-SnS and n-SnS2, Ce-doped SnS quantum dots serve as electronic sensitizers, effectively increasing the carrier concentration in SnS2. The optimal gas sensor based on the 1% Ce-doped SnS/SnS2 composites enables high sensitivity (with a response of 22.1 to 1 ppm NO2), ultralow detection limit (1 ppb), excellent long-term stability at room temperature, and a lower baseline resistance. This engineering strategy of metal sulfide semiconductor heterostructures through single-atom targeted regulation provides new insights for further optimizing the composite system.

Insights into Electrochemical CO2 Reduction on SnS2 : Main Product Switch from Hydrogen to Formate by Pulsed Potential Electrolysis.

Tin disulfide (SnS2 ) is a promising candidate for electrosynthesis of CO2 -to-formate while the low activity and selectivity remain a great challenge. Herein, we report the potentiostatic and pulsed potential CO2 RR performance of SnS2 nanosheets (NSs) with tunable S-vacancy and exposure of Sn-atoms or S-atoms prepared controllably by calcination of SnS2 at different temperatures under the H2 /Ar atmosphere. The catalytic activity of S-vacancy SnS2 (Vs -SnS2 ) is improved 1.8 times, but it exhibits an exclusive hydrogen evolution with about 100 % FE under all potentials investigated in the static conditions. The theoretical calculations reveal that the adsorption of *H on the Vs -SnS2 surface is energetically more favorable than the carbonaceous intermediates, resulting in active site coverage that hinders the carbon intermediates from being adsorbed. Fortunately, the main product can be switched from hydrogen to formate by applying pulsed potential electrolysis benefiting from in situ formed partially oxidized SnS2-x with the oxide phase selective to formate and the S-vacancy to hydrogen. This work highlights not only the Vs -SnS2 NSs lead to exclusively H2 formation, but also provides insights into the systematic design of highly selective CO2 reduction catalysts reconstructed by pulsed potential electrolysis.

Removal of Norfloxacin from Wastewater by Adsorption onto SnS2 Followed by Photocatalytic Degradation**

AbstractAntibiotic remainders found in the river water of many countries have been a significant threat to the environment and human health. Herein, the removal of the Norfloxacin antibiotic from the aqueous medium has been reported. We successfully synthesized SnS2 nanoplates and studied the removal of Norfloxacin aqueous medium by adsorption followed by a photocatalysis process using SnS2. The presence of pores on the SnS2 surface and excellent photo‐induced charge generation ability under solar light illumination makes it a potential material for the degradation of Norfloxacin from an aqueous medium. 80 % of Norfloxacin was degraded in 130 minutes, out of which 36.7 % was removed in 20 min by the adsorption process and the rest was degraded in 110 min photo catalytically. The scavenger experiments were also performed to determine the reactive species responsible for the photodegradation. The results identified that the holes dominate the photodegradation of Norfloxacin by SnS2 in the aqueous medium. Our study has established SnS2 as a promising material for the removal of water pollutants, which may be a pathway to protect the environment from antibiotic pollution in river water.

Investigations of Vacancy-Assisted Selective Detection of NO2 Molecules in Vertically Aligned SnS2.

Two important methods for enhancing gas sensing performance are vacancy/defect and interlayer engineering. Tin sulfide (SnS2) has recently attracted much attention for sensing of the NO2 gas due to its active surface sites and tunable electronic structure. Herein, SnS2 has been synthesized by the chemical vapor deposition (CVD) method followed by nitrogen plasma treatment with different exposure times for fast detection of NO2 molecules. Plasma treatment created a substantial number of surface vacancies on SnS2 flakes, which were controlled by the exposure period to modify the surface of flakes. After 12 min of nitrogen plasma treatment, SnS2 nanoflakes show considerable improvement in NO2 sensing characteristics, including a high sensing response of ∼264% toward 100 ppm NO2 at 120°C. The enhancement in the relative response of the sensor is due to the electronic interaction between NO2 molecules and the S vacancies on the surface of SnS2. Density functional theory (DFT) computations indicate that the S-vacancy defects on the surface dominate the effective NO2 detection and the NO2 adsorption mechanism transition from physisorption to chemisorption. Adsorption kinetics of the NO2 gas over SnS2 nanoflake-based chemiresistor sensors were studied using the Lee and Strano model [ Langmuir 2005, 21(11), 5192-5196]. The irreversible rate of the reaction for various NO2 concentrations exposed to the gas sensor is extracted using this model, which also appropriately describes the response curves. The forward rate constant of the irreversible gas sensor increased with the increase of the N2 plasma treatment time and reached the maximum in the 12 min plasma-treated sample. Through defect engineering, this research may open up new vistas for the design and synthesis of 2D materials with enhanced sensing properties.

Interfacial Coordinational Bond Triggered Photoreduction Membrane for Continuous Light-Driven Precious Metals Recovery.

Chemical/electric energy-driven processes dominate the traditional precious metal (PM) recovery market. The renewable energy-driven selective PM recycling approach crucial for carbon neutrality is under exploration. Herein, via an interfacial structure engineering approach, coordinational-active pyridine groups are covalently integrated onto the photoactive semiconductor SnS2 surface to construct Py-SnS2. Triggered by the preferred coordinational binding force between PMs and pyridine groups, together with the photoreduction capability of SnS2, Py-SnS2 shows significantly enhanced selective PM-capturing performance toward Au3+, Pd4+, and Pt4+ with recycling capacity up to 1769.84, 1103.72, and 617.61 mg/g for Au3+, Pd4+, and Pt4+, respectively. Further integrating the Py-SnS2 membrane into a homemade light-driven flow cell, 96.3% recovery efficiency was achieved for continuous Au recycling from a computer processing unit (CPU) leachate. This study reported a novel strategy to fabricate coordinational bonds triggered photoreductive membranes for continuous PM recovery, which could be expanded to other photocatalysts for broad environmental applications.

Synergistically Accelerating Adsorption-Electrocataysis of Sulfur Species via Interfacial Built-In Electric Field of SnS2 -MXene Mott-Schottky Heterojunction in Li-S Batteries.

Developing efficient heterojunction electrocatalysts and uncovering their atomic-level interfacial mechanism in promoting sulfur-species adsorption-electrocatalysis are interesting yet challenging in lithium-sulfur batteries (LSBs). Here, multifunctional SnS2 -MXene Mott-Schottky heterojunctions with interfacial built-in electric field (BIEF) are developed, as a model to decipher their BIEF effect for accelerating synergistic adsorption-electrocatalysis of bidirectional sulfur conversion. Theoretical and experimental analysis confirm that because Ti atoms in MXene easily lost electrons, whereas S atoms in SnS2 easily gain electrons, and under Mott-Schottky influence, SnS2 -MXene heterojunction forms the spontaneous BIEF, leading to the electronic flow from MXene to SnS2 , so SnS2 surface easily bonds with more lithium polysulfides. Moreover, the hetero-interface quickly propels abundant Li+ /electron transfer, so greatly lowering Li2 S nucleation/decomposition barrier, promoting bidirectional sulfur conversion. Therefore, S/SnS2 -MXene cathode displays a high reversible capacity (1,188.5mAhg-1 at 0.2C) and a stable long-life span with 500 cycles (≈82.7% retention at 1.0C). Importantly, the thick sulfur cathode (sulfur loading: 8.0mgcm-2 ) presents a large areal capacity of 7.35mAhcm-2 at lean electrolyte of 5.0µLmgs -1 . This work verifies the substantive mechanism that how BIEF optimizes the catalytic performance of heterojunctions and provides an effective strategy for deigning efficient bidirectional Li-S catalysts in LSBs.

Study on the Detection Characteristics and Response Mechanism of SnS2-Based Sensors for SO2 and SOF2

Based on the wide application of sulfur hexafluoride (SF6) gas in the power industry, the analysis and detection of its decomposition components have become important technical means for state detection and fault evaluation of gas-insulated equipment. The gas-sensitive characteristics and adsorption mechanism of the SnS2 sensor for SO2 and SOF2 gases were investigated using SO2 and SOF2, the main SF6 decomposition components, as the target detection gases. SnS2 gas-sensitive materials and components were prepared, and the temperature response, concentration response, response recovery and stability of the SnS2 sensor for the two SF6 decomposition components were tested based on the gas-sensitive test platform. The results demonstrate that the sensor had the best working performance at 200 °C, with obvious response and ideal recovery for both target gases and good stability in a certain time. Based on the first principle, the SnS2 surface structure model and the target gas adsorption model were established, and the adsorption mechanism was analyzed in terms of frontier molecular orbital theory to verify the correctness of the gas-sensitive test results. The gas-sensitive test analysis and simulation calculation can provide data basis and theoretical support for the study of SF6 decomposition components detected by gas sensors.

Ammonia Sensing Properties of SnS₂/SnO₂ Nanocomposite-Based Gas Sensor by SnS₂ Annealing

Tin disulfide has been demonstrated effective for ammonia detection, while its potential application has been seriously limited by high working temperature and low sensitivity. In this article, SnS2/SnO2 nanocomposites are prepared through a two-step method. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis show that the material would be transformed from SnS2 to SnS2/SnO2 composites by increasing annealing temperature. Gas testing results have shown that SnS2/SnO2 nanocomposites exhibit high sensitivity and good stability to ammonia, and the response to 100-ppm ammonia at 80 °C can reach 5.91. The sensor response was relatively stable at the target gas concentration. The high response of SnS2/SnO2 composites to ammonia at low temperatures might be due to SnS2 surface defects and heterostructure. From the perspective of atom and energy, adsorption energy has been simulated and calculated by the first principle analysis, to some extent, which proved that SnS2/SnO2 nanocomposite can improve the response to ammonia gas.

Novel insights into the unique intrinsic sensing essences of 2D tin chalcogenides for ethanol: From hexagonal SnS2 to orthorhombic SnS

Introducing orthorhombic SnS phase into two-dimensional (2D) hexagonal SnS2 crystal to form in-plane heterojunctions has become a promising approach to facilitate the sensitivity of SnS2 towards trace gases. However, its surface sensitization mechanism remains to be exploited in addition to the heterointerface effect. Hence, to dig into it, we explored the surface adsorption of SnS and SnS2 from unique surface electron configurations by combing experimental, computational and bionic approaches. Taking ethanol vapor as the target gas, orthorhombic SnS shows rapid detection of trace ethanol with a sub-ppm level at room temperature (RT). In contrast, hexagonal SnS2 is more suitable for detecting ethanol vapor with much higher concentrations (above 50 ppm). First-principles calculations and porcupine quill models further reveal that unlike the inactive symmetry of electrons on SnS2 surface, the rotational symmetry breaking of the stereochemically-active SnS surface leads to the oriented rearrangement of its surface electrons, which greatly facilitates the adsorption of trace ethanol molecules on SnS. On these basis, we renew the design concept of SnS–SnS2 in-plane heterostructures. This work reveals the structure-property relationship between the crystalline structures and gas-sensitive characteristics of 2D tin chalcogenides from a brand-new perspective, and helps the design and research of novel lateral heterostructures.

Crystal plane selective adsorption and photogenerated carrier transfer between the SnS2 nanoparticles and AuNCs

We calculated the adsorption behaviors of Au clusters on different crystal planes of SnS2 via first principles methods. Due to the surface dangling bonds and surface atomic arrangements, the (101) plane shows lower formation energy (−5.29 eV) to Au clusters as compared to the (001) surface (−3.77 eV) of SnS2. This indicates the Au clusters prefer to stick on the (101) surface of SnS2, which is further confirmed by the experimental results. The calculated HOMO and LUMO reveal the excited electron transfer behavior between Au clusters and the (101) surface of SnS2. The photoluminescence spectra, photocurrent and photocatalytic experiments of AuNCs and SnS2 nanoparticles support the electron transfer mechanisms.

Synergically engineering defect and interlayer in SnS2 for enhanced room-temperature NO2 sensing

Defect and interlayer engineering are considered as two promising strategies to alter the electronic structures of sensing materials for improved gas sensing properties. Herein, ethylene glycol intercalated Al-doped SnS2 (EG-Al–SnS2) featuring Al doping, sulfur (S) vacancies, and an expanded interlayer spacing was prepared and developed as an active NO2 sensing material. Compared to the pristine SnS2 with failure in detecting NO2 at room temperature, the developed EG-Al–SnS2 exhibited a better conductivity, which was beneficial for realizing the room-temperature NO2 sensing. As a result, a high sensing response of 410% toward 2 ppm NO2 was achieved at room temperature by using the 3% EG-Al–SnS2 as the sensing material. Such outstanding sensing performance was attributed to the enhanced electronic interaction of NO2 on the surface of SnS2 induced by the synergistic effect of Al doping, S vacancies, and the expanded interlayer spacing, which is directly revealed by the in-suit measurement based on near-ambient pressure X-ray photoelectronic spectroscopy (NAP–XPS). Furthermore, to identify the role of Al doping, S vacancies, and the expanded interlayer spacing in enhancing the NO2 sensing properties, a series of comparative experiments and theoretical calculations were performed.

Effect of hydrogen and oxygen plasma on the photoelectronic current and photo-response time of SnS2 flakes

The photoelectronic properties of SnS2 flakes have been widely studied due to the abundance and environmentally friendly qualities of this material. However, the defects and residual molecules adsorbed on the SnS2 surface can have a negative influence on the photoelectronic current and photo-response time. In this paper we examine the effects of these two factors on the photoelectronic currents of SnS2 flakes. Defects on a single crystal SnS2 surface are fabricated using hydrogen and oxygen plasma and are characterized by atomic force microscopy, confocal micro-Raman spectroscopy and photoluminescence spectroscopy. Doping by oxygen plasma can be demonstrated by x-ray photoelectron spectroscopy. Both the photoelectronic current and the switching speed (on and off times) are reduced after hydrogen plasma treatment. However, oxygen plasma has two effects on SnS2 thin film transistors. First, oxygen plasma can remove the residual molecules within a short irradiation time. In this case, the photoelectronic current of SnS2 treated with oxygen plasma is enhanced several times. Second, with a longer treatment time oxygen plasma induces many defects and doping on the SnS2 flake surface, as reflected in the reduced photoelectronic current and switching speed. Results of this work have significant practical applications for photoelectronic detection with SnS2 flakes.

Ag functionalized SnS2 with enhanced photothermal activity for safe and efficient wound disinfection.

Severe bacterial infections have brought an urgent threat to our daily life, and photothermal therapy (PTT) has acted as an effective method to kill bacteria. Herein we decorated Ag on the surface of SnS2 (Ag@SnS2), which has outstanding photothermal conversion capability and good biocompatibility. The decoration of Ag on SnS2 improved the absorption of near-infrared (NIR) light in comparison to SnS2, resulting in a temperature increase of 50 °C after 5 min of NIR light irradiation (1.9 W cm-2) and a photothermal conversion efficiency of 31.3%. Ag@SnS2 exhibits almost 100% growth inhibition of E. coli and S. aureus bacteria due to hyperthermia, with a concentration larger than 0.5 mg mL-1 and 5 min of NIR irradiation. Meanwhile, SEM images of treated bacterial cells showed the attachment of Ag@SnS2 on the cell surface and obvious cellular membrane destruction. Ag@SnS2 can also accelerate in vivo wound healing through PTT-induced bacterial disinfection. Therefore, Ag@SnS2 exhibits great potential for photothermal antibacterial application and wound disinfection.