Silicon Surface Research Articles

Crystallization Control of Anionic Thiacalixarenes on Silicon Surface Coated with Cationic Poly(ethyleneimine).

Surface modification of solid substrates with organic molecules and polyelectrolytes is a promising strategy toward advanced soft materials due to the control of molecular arrangement and supramolecular organization; however, understanding the nature of interactions within the assembly is challenging. Here a facile approach to the control of the architecture of calixarene macrocycles on soft surfaces is presented through the interplay of weak interactions involving a solid silicon substrate, a cationic polyelectrolyte layer, and anionic sulfonatothiacalix[4]arene (STCA). Topological analysis of atomic force microscopy (AFM) images of STCA on silicon, as well as silicon wafers modified with neutral polyethylenimine (PEI) and cationic PEI-H+, indicates different surface morphology and assembly behavior of STCA on such substrates. Drop-casting a calixarene solution onto silicon induces the formation of chaotically oriented needle crystals. When there is globular PEI, a nucleation point for the STCA crystals is formed on the polyelectrolyte surface, which grows into rosette structures. In contrast, protonated PEI with a chain-like structure alters the self-organization of STCA on silicon surfaces, leading to a dense uniform fiber-like network. Density functional theory modeling of the system components' self-assembly reveals thermodynamically favorable face-to-face antiparallel aggregation of STCA monomers and contribution of H-bonding into PEI(PEI-H+)-STCA and Si-STCA association.

Double Gold/Nitrogen Nanosecond-Laser-Doping of Gold-Coated Silicon Wafer Surfaces in Liquid Nitrogen

A novel double-impurity doping process for silicon (Si) surfaces was developed, utilizing nanosecond-laser melting of an 11 nm thick gold (Au) top film and a Si wafer substrate in a laser plasma-activated liquid nitrogen (LN) environment. Scanning electron microscopy revealed a fluence- and exposure-independent surface micro-spike topography, while energy-dispersive X-ray spectroscopy identified minor Au (~0.05 at. %) and major N (~1–2 at. %) dopants localized within a 0.5 μm thick surface layer and the slight surface post-oxidation of the micro-relief (oxygen (O), ~1.5–2.5 at. %). X-ray photoelectron spectroscopy was used to identify the bound surface (SiNx) and bulk doping chemical states of the introduced nitrogen (~10 at. %) and the metallic (<0.01 at. %) and cluster (<0.1 at. %) forms of the gold dopant, and it was used to evaluate their depth distributions, which were strongly affected by the competition between gold dopants due to their marginal local concentrations and the other more abundant dopants (N, O). In this study, 532 nm Raman microspectroscopy indicated a slight reduction in the crystalline order revealed in the second-order Si phonon band; the tensile stresses or nanoscale dimensions of the resolidified Si nano-crystallites envisioned by the main Si optical–phonon peak; a negligible a-Si abundance; and a low-wavenumber peak of the Si3N4 structure. In contrast, Fourier transform infrared (FT-IR) reflectance and transmittance studies exhibited only broad structureless absorption bands in the range of 600–5500 cm−1 related to dopant absorption and light trapping in the surface micro-relief. The room-temperature electrical characteristics of the laser double-doped Si layer—a high carrier mobility of 1050 cm2/Vs and background carrier sheet concentration of ~2 × 1010 cm−2 (bulk concentration ~1014–1015 cm−3)—are superior to previously reported parameters of similar nitrogen-implanted/annealed Si samples. This novel facile double-element laser-doping procedure paves the way to local maskless on-demand introductions of multiple intra-gap intermediate donor and acceptor bands in Si, providing related multi-wavelength IR photoconductivity for optoelectronic applications.

The Formation of Porous Silicon Using Vertical Photoelectrochemical Method with Laser Energy Variation

Due to its notable characteristics, porous silicon (PSi) has become the main focus in silicon upgrades for optoelectronics, medical, and sensor applications. Here, successful vertical photoelectrochemical fabrication of PSi based on crystalline silicon n-type wafers with orientation (100) has been accomplished. Silicon surfaces were anodized for 10 min in a solution of hydrofluoric acid and ethanol at a ratio of 1:3 and a current density of 4 mA/cm2 under laser illumination. Illumination sources were red, green, and purple laser beams with energies of 1.91 eV, 2.33 eV, and 3.06 eV, respectively, conducted to observe the effects on PSi microstructures and optical properties. The pores formed on the silicon surface were characterized via SEM, XRD, FTIR, and UV-Vis DRS Spectrophotometer. SEM analysis showed pore size distributions of 2.130, 3.353, and 1.078 mm for PSi samples with red, green, and purple lasers, respectively. XRD investigation revealed diffraction angles of 33.14° and 69.47° belonging to (211) and (422) planes, respectively, corresponding to the PSi. For samples of silicon and PSi with red, green, and purple lasers, the crystallite size and crystallinity were 168.55 nm and 44.80%, 25.02 nm and 17.12%, 29.19 nm and 23.56%, and 145.05 nm and 35.17%, respectively. FTIR observation confirmed that the PSi surface contained chemical bonds of Si-Si, Si-H, Si-H2, Si-O-Si, and C=O. UV-Vis DRS examination revealed the reflectance spectrum oscillation, indicating that lasers caused pore formation in PSi with bandgap energies of between 1 and 2 eV.

Recent Advances in Black Silicon Surface Modification for Enhanced Light Trapping in Photodetectors

The intricate nanostructured surface of black silicon (BSi) has advanced photodetector technology by enhancing light absorption. Herein, we delve into the latest advancements in BSi surface modification techniques, specifically focusing on their profound impact on light trapping and resultant photodetector performance improvement. Established methods such as metal-assisted chemical etching, electrochemical etching, reactive ion etching, plasma etching, and laser ablation are comprehensively analyzed, delving into their mechanisms and highlighting their respective advantages and limitations. We also explore the impact of BSi on the emerging applications in silicon (Si)-based photodetectors, showcasing their potential for pushing the boundaries of light-trapping efficiency. Throughout this review, we critically evaluate the trade-offs between fabrication complexity and performance enhancement, providing valuable insights for future development in this rapidly evolving field. This knowledge on the BSi surface modification and its applications in photodetectors can play a crucial role in future implementations to substantially boost light trapping and the performance of Si-based optical detection devices consequently.

Ultra-efficient surface grating couplers for chip-to-fiber and chip-to-free-space coupling based on single-beam radiation

Surface grating couplers, such as fiber-chip grating couplers and optical antennas, are fundamental devices in photonic integrated circuits, as they enable the coupling of light between the chip and an external medium. An important metric of surface grating couplers is the coupling efficiency, and high values, greater than -1 dB, are required for applications in quantum technology, light detection and ranging, and optical interconnects. Surface grating couplers typically suffer from radiation loss to the substrate, which significantly limits their coupling efficiency. Here we propose a novel grating-coupling concept that utilizes a high-refractive-index upper cladding to frustrate radiation orders to the substrate by operating in a single-beam diffraction regime. To illustrate this concept, we report the design of an easily fabricable silicon surface grating coupler with an unprecedented coupling efficiency of -0.2 dB to a single-mode optical fiber. Furthermore, the proposed strategy allows us to design an evanescently coupled millimeter-long optical antenna with a coupling efficiency of -0.1 dB to free space. Additionally, an ultra-fast wavelength-tunable beam steering of 0.37°/nm is achieved, which corresponds to more than a 2.5-fold enhancement over comparable silicon antennas. These results represent a pathway for a new set of photonic integrated interfaces for applications in which high-efficiency chip-to-fiber and chip-to-free-space coupling is critical.

Hierarchical Micro/Nanostructures with Anti-Reflection and Superhydrophobicity on the Silicon Surface Fabricated by Femtosecond Laser

In this paper, hierarchical micro/nano structures composed of periodic microstructures, laser-induced periodic surface structures (LIPSS), and nanoparticles were fabricated by femtosecond laser processing (LP). A layer of hydrophobic species was formed on the micro/nano structures through perfluorosilane modification (PM). The reflectivity and hydrophobicity’s influence mechanisms of structural height, duty cycle, and size are experimentally elucidated. The average reflectivity of the silicon surface in the visible light band is reduced to 3.0% under the optimal parameters, and the surface exhibits a large contact angle of 172.3 ± 0.8° and a low sliding angle of 4.2 ± 1.4°. Finally, the durability of the anti-reflection and superhydrophobicity is also confirmed. This study deepens our understanding of the principles of anti-reflection and superhydrophobicity and expands the design and preparation methods for self-cleaning and anti-reflective surfaces.

Quantum Chemical Model Calculations of Adhesion and Dissociation between Epoxy Resin and Si-Containing Molecules

There is no doubt that when solid surfaces are modified, the functional groups and atoms directly bonded to solid atoms play a major role in adsorption interactions with molecules or resins. In this study, the adhesion and dissociation between epoxy resin and molecules containing Si atoms were analyzed. The analysis, conducted in contact with the solid surface of silicon, utilized quantum chemical calculations based on a molecular model. We compared some Si-containing molecular models to test quantum chemical calculations that contribute to the study of adhesion and dissociation between epoxy resins and solid surfaces somehow other than simple potential energy curve calculations. The AFIR (artificial force induced reaction) method, implemented in the GRRM (global reaction route mapping) program, was employed to separate an epoxy resin model molecule and three types of silicon compounds (Si(CH3)2(OH)2, Si(CH3)4, and (CH3)2SiF2) in three directions, determining their minimum dissociation energy when changing the applied energy by 2.5 kJ/mol. In systems with weak hydrogen bonds, such as Si(CH3)4 or (CH3)2SiF2, the energy required for dissociation was not large; however, in systems with strong hydrogen bonds, such as Si(CH3)2(OH)2, dissociation was more difficult in the vertical direction. Although anisotropy due to hydroxyl groups was calculated in the horizontal direction, dissociation remained relatively easy.

Double-pentagon silicon chains in a quasi-1D Si/Ag(001) surface alloy

Silicon surface alloys and silicide nanolayers are highly important as contact materials in integrated circuit devices. Here we demonstrate that the submonolayer Si/Ag(001) surface reconstruction, reported to exhibit interesting topological properties, comprises a quasi-one-dimensional Si-Ag surface alloy based on chains of planar double-pentagon Si moieties. This geometry is determined using a combination of density functional theory calculations, scanning tunnelling microscopy, and grazing incidence x-ray diffraction simulations, and yields an electronic structure in excellent agreement with photoemission measurements. This work provides further evidence of pentagonal geometries in 2D materials and heterostructures and elucidates the importance of surface alloying in stabilizing their formation.

Structural Features of Porous Silicon Formed on Heavily Doped Plates of Single-Crystal Silicon with Electron Conductivity

Using scanning electron microscopy, the structures of the surface and internal regions of porous silicon obtained by anodizing heavily doped plates of single-crystal silicon with electron conductivity in a hydrofluoric acid solution at different current densities were studied. It is found that the porous silicon surface has dark gray and light gray pores, which differ in size and surface distribution density. Dark gray pores possess larger sizes, and their density is about 5–10 times less than that of light gray pores. Based on the cross-section imagery, it is shown that light gray pores correspond to underdeveloped channels of small depth, while dark gray pores are the entrance points of deep bottle-shaped channels passing from the surface into the depth of the silicon wafer. The equivalent diameters of light gray pores on the surface of porous silicon are 12–15 nm and are practically independent of the anodic current density. At the same time, the equivalent diameters of dark gray pores and average distances between their centers increase linearly from 15 to 35 nm on the surface and from 35 to 120 nm in the volume of porous silicon when the current density is increased from 30 to 90 mA/cm2. The average thickness of silicon skeleton elements is about 3 nm on the surface and increases to 5–6 nm in the volume. By setting the density of the anode current, it is possible to obtain layers of porous silicon with different structural parameters. The obtained research results have practical significance for the formation of composite materials based on porous silicon, which can be used as a porous matrix for the deposition of metals and semiconductors.

The Influence of Rapid Heat Treatment During the Formation of Aluminum-Polysilicon Contacts on the Electrical Parameters of CMOS Microcircuits

The influence of rapid heat treatment (450 °C, 7 s) on the electrical parameters of CMOS integrated circuits during the formation of ohmic contact between aluminum metallization and polysilicon is considered. The following volt-ampere characteristics of the dependence of drain current on voltage were chosen as the analyzed parameters of n- and p-channel transistors: at the gate when diode-connected; on the drain at different gate voltages; on the drain in the channel breakdown mode without applying potential to the gate. A comparison of these parameters was carried out with respect to microcircuits manufactured using standard technology (450 °C, 20 min) to form these contacts. Analysis of the results showed that the use of rapid heat treatment to form an ohmic aluminum-polysilicon contact can significantly improve the above characteristics of n-MOS and p-MOS transistors. From the current-voltage characteristics of n- and p-channel transistors it follows that in the region of gate voltages greater than 0.65 V, the drain current after long-term heat treatment is higher than after quick heat treatment. Analysis of the current-voltage characteristics of the drain current versus the drain voltage showed that the drain current when using long-term heat treatment is significantly higher than after rapid heat treatment. In this case, for long-term heat treatment, there is a decrease in the channel breakdown voltage only for n-channel transistors and an increase in the drain current in the region of more than 5 V for both n- and p-channel transistors. Such improvements occur by eliminating the formation of polysilicon conglomerates in the aluminum contact, significantly reducing the epitaxial recrystallization of silicon doped with aluminum on the silicon surface, as well as reducing the microrelief of the interface of this contact and reducing the growth in the size of contact windows due to the lateral interaction of aluminum with polysilicon.

RKFD Scheme for Quantum Reflection Model of Bose-Einstein Condensates (BEC) from Silicon Surface

We applied the numerical combination of Runge-Kutta and Finite Difference (RKFD) scheme for a quantum reflection model of Bose-Einstein condensate (BEC) from a silicon surface. It is by the time-dependent Gross-Pitaevskii equation (GPE), a non-linear Schrödinger equation (NLSE) in the context of quantum mechanics. The role of cut-off potential δ and negative imaginary potential Vim is essential to estimating non-interacting BEC reflection models. Relying on these features, we performed a numerical simulation of the BEC quantum reflection model and calculated the effect of reflection probability R versus incident speed vx. The model is based on the three rapid potential variations: positive-step potential +Vstep, negative-step potential -Vstep, and Casimir-Polder potential VCP. As a result, the RKFP numerical scheme was successfully set up and applied to the quantum reflection model of BEC from the silicon surface. The numerical simulations results show that the reflection probability R decays exponentially to the incident speed vx.

Ultrathin Self-Assembled Monolayer for Effective Silicon Solar Cell Passivation.

Passivation technology is crucial for reducing interface defects and impacting the performance of crystalline silicon (c-Si) solar cells. Concurrently, maintaining a thin passivation layer is essential for ensuring efficient carrier transport. With an ultrathin passivated contact structure, both Silicon Heterojunction (SHJ) cells and Tunnel Oxide Passivated Contact (TOPCon) solar cells achieve an efficiency surpassing 26%. To reduce production costs and simplify solar cell manufacturing processes, the rapid development of organic material passivation technology has emerged. However, its widespread industrial production is hindered by environmental safety concerns, such as strong acid corrosion and biological and ecological safety issues. Here, we discovered a low-cost self-assembled monolayer (SAM) hole-selective transport material known as 2PACz ([2-(9H-carbazol-9-yl) ethyl] phosphonic acid) with phosphate groups to form c-Si solar cells for the first time. The ultrathin film of 2PACz with phosphate groups can establish strong and stable P-O-Si bonds on the silicon surface. Meanwhile, like 2PACz, a uniform ultrathin film with a carbazole function group can offer electron-localizing and thus hole-selective properties, which provides ideas for studying dopant-free silicon solar cells. As a result of such interfacial passivation engineering, it plays an important role in repairing porous structures, such as pyramid-textured silicon surfaces, and cutting losses during the commercialization of c-Si solar cells. Crucially, this advancement offers insights for the development of new high-efficiency ultrathin film passivation methods in the postsilicon era.

Fabrication and Simulation of Silicon Nanowire pH Sensor for Diabetes Mellitus Detection

Diabetes Mellitus (DM) is a disease failed to control the balance of blood sugar level due to lack of insulin thereby it effect human health. In Malaysia, there are around 3.9 millions people aged 18 years old and above have diabetes according to National Health and Morbidity Survey 2019. Silicon Nanowire is a nanostructure which has ultra-high sensitivity and non-radioactive that has potential given good performances when applied on pH sensor and biosensor. Silicon nanowire pH sensor and biosensor is an electronic sensor that investigated to improve the sensitivity and accuracy for detecting DM. This project consists of two parts, which are fabrication of silicon nanowire pH sensor and simulation of silicon nanowire biosensor as preliminary study. In fabrication, silicon nanowire of pH sensor is fabricated by conventional lithography process, reaction ion etching (RIE) and metallization to achieved the width of 100 nm silicon nanowire. The pH6, pH7, pH10 and DI water as analytes to analysis the current-voltage (I-V) characteristics of silicon nanowire pH sensor. In second part, the silicon nanowire biosensor as preliminary study is done simulation by Silvaco ATLAS devices simulator. The silicon nanowire with 30 nm in height and 20 nm in width of biosensor is designed and simulated to analyze the performance in terms of sensitivity. I-V characteristics of silicon nanowire biosensor according to different concentration of negative interface charge is determined. The negative interface charge represent as the Retinol Binding Protein 4 (RBP4) which is used to diagnose DM. The I-V characteristic based on the change in current, resistance and conductance to determine sensitivity. Lastly, the sensitivity of silicon nanowire pH sensor obtained 23.9 pS/pH while the sensitivity of simulated silicon nanowire biosensor obtained 3.91 nS/e.cm2. The results shown the more negative charge of concentration analyte attached on surface silicon nanowire has been accumulated more current flow from drain terminal to source terminal. It leads to the resistance becomes highest and obtained good sensitivity. In summary, the silicon nanowire pH sensor exhibited good performance and high sensitivity in detection pH level. The simulated silicon nanowire biosensor is capable of detecting biomolecular interactions charges to obtained high sensitive and accuracy result.

Preparation of Br-terminated Si(100) and Si(111) surfaces and their use as atomic layer deposition resists

In area-selective processes, such as area-selective atomic layer deposition (AS-ALD), there is renewed interest in designing surface modification schemes allowing to tune the reactivity of the nongrowth (NG) substrates. Many efforts are directed toward small molecule inhibitors or atomic layers, which would modify selected surfaces to delay nucleation and provide NG properties in the target AS-ALD processes allowing for the manufacturing of smaller sized features than those produced with alternative approaches. Bromine termination of silicon surfaces, specifically Si(100) and Si(111), is evaluated as a potential pathway to design NG substrates for the deposition of metal oxides, and TiO2 (from cycles of sequential exposures of tetrakis-dimethylamido-titanium and water) is tested as a prototypical deposition material. Nucleation delays on the surfaces produced are comparable to those on H-terminated silicon that is commonly used as an NG substrate. However, the silicon surfaces produced by bromination are more stable, and even oxidation does not change their chemical reactivity substantially. Once the NG surface is eventually overgrown after a large number of ALD cycles, bromine remains at the interface between silicon and TiO2. The NG behavior of different crystal faces of silicon appears to be similar, albeit not identical, despite different arrangements and coverage of bromine atoms.

Near-infrared-terahertz hyper-Raman spectroscopy of an excited silicon surface.

We recorded the hyper-Raman spectra resulting from the interaction of a near-infrared (near-IR) picosecond pulse and a terahertz (THz) ultrashort pulse at the surface of a (111) silicon sample. A simple model is proposed to analyze the evolution of the hyper-Raman spectra vs the time delay between the near-IR and THz pulses. It links the hyper-Raman spectra to the multi-phonon absorption in silicon. This approach makes it possible to demonstrate that, during carrier generation by the near-IR pulse, the two-phonon and three-phonon absorption bands are enhanced in modes involving optical phonons. This process results from the very rapid and strong population of the optical phonons induced by the photo-generated hot carriers. It occurs over a few hundreds of femtoseconds and lasts throughout the duration of the near-IR pulse.

Virucidal Coatings Active Against SARS-CoV-2

Three types of coatings (contact-based, release-based, and combined coatings with both contact-based and release-based actions) were prepared and tested for the ability to inactivate SARS-CoV-2. In these coatings, quaternary ammonium surfactants were used as active agents since quaternary ammonium compounds are some of the most commonly used disinfectants. To provide contact-based action, the glass and silicon surfaces with covalently attached quaternary ammonium cationic surfactant were prepared using a dimethyloctadecyl[3-(trimethoxysilyl)propyl]ammonium chloride modifier. Surface modification was confirmed by attenuated total reflection infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy, and contact angle measurements. The grafting density of the modifier was estimated by XPS and elemental analysis. To provide release-based action, the widely used quaternary ammonium cationic disinfectant, benzalkonium chloride (BAC), and a newly synthesized cationic gemini surfactant, C18-4-C18, were bound non-covalently to the surface either through hydrophobic or electrostatic interactions. Virus titration revealed that the surfaces with combined contact-based and release-based action and the surfaces with only release-based action completely inactivate SARS-CoV-2. Coatings containing only covalently bound disinfectant are much less effective; they only provide up to 1.25 log10 reduction in the virus titer, probably because of the low disinfectant content in the surface monolayer. No pronounced differences in the activity between the flat and structured surfaces were observed for any of the coatings under study. Comparative studies of free and electrostatically bound disinfectants show that binding to the surface of nanoparticles diminishes the activity. These data indicate that SARS-CoV-2 is more sensitive to the free disinfectants.

Heat transfer origin of adhesion behaviors between liquid-aluminum and solid aluminum/silicon interfaces

Liquid-aluminum tends to adhere to some surfaces rather than others, and the underlying mechanism of the differences in adhesion of liquid-aluminum on different surfaces is still unclear. This manuscript takes liquid-aluminum/aluminum and liquid-aluminum/silicon interfaces as research objects, revealing that solid aluminum surface is aluminophilic but the solid silicon surface is aluminophobic, mainly due to differences in interfacial thermal conductance (ITC) between two interfaces. We also investigate effect of surface temperature on adhesion characteristics of liquid-aluminum on aluminum/silicon surfaces, and decode the reasons from lattice integrity and phonon spectra. It is shown that vibrational state with intact lattice excites fewer low frequency phonons with increasing surface temperature, resulting in a decrease in ITC and thus adhesion force. In diffusion state where lattice is fractured resulting from high temperature, interfacial adhesion is increased due to surface defects.

Studying the optical properties of assembled silver and gold nanoparticles for the purpose of creating SERS sensors

The optical properties of silver and gold sols with different sizes of nanoparticles and the method of their chemical deposition on the surface of silicon, silicon oxide, glass and aluminum foil were studied in order to obtain SERS substrates – promising platforms for the development of aptamer sensors and immunochemical analysis of various pathogens. It has been established that for operation on lasers with exciting radiation wavelengths of 532, 638 and 785 nm, it is possible to create universal SERS substrates based on colloidal solutions obtained by the liquid-phase chemical method with an average silver particle size of 40 nm and by the Leopold-Lendl method with an average size of 20 nm.

Effect of micropatterning with nanowire-based microcavity array on bacterial enrichment and selective distribution

The micro-patterned topography can affect bacterial enrichment and selective distribution by modifying the characteristics of material surface. In this study, we fabricated microcavity patterned silicon surfaces, and quantitatively explored the amount and distribution of Escherichia coli (E. coli) cells attached on a series of defined topographies. The results showed that E. coli cells enrichment was significantly increased on silicon nanowires-based microcavity array when compared to nanowires patterned silicon wafer. Furthermore, the microcavity diameter can control bacterial distribution by changing hydrophilic performance of interface. With the microcavity diameter of 7 µm, the cells colonized into the microcavity almost in its entirety, whilst distributed around the microcavity completely with 10 µm diameter, regardless of centre distances. This phenomenon can be explained by the Cassie-Baxter model equation according to the wettability. The distribution of bacterial enrichment changed with the silicon surfaces turning from non-wetting status to wetting status when treated with oxygen plasma to modify the hydrophobicity. These results demonstrated that microcavity patterned surface could favor bacterial enrichment on silicon and strictly confined bacterial distribution inside/outside the microcavity. Moreover, the nanowires inside microcavity can also increase electron conductivity and reduce the internal resistance, thus providing scientific evidence for the design of wearable microbial fuel cell with rational optimization and integration of different components for electronic skin.

HFE-7100 spray cooling under microgravity: Liquid film dynamics and heat transfer

Spray cooling under microgravity is not only motivated by space applications but also by the essential pursuit of the exploration spirit facing the unknown. This study was the first series of scientific experiments conducted at the China New Microgravity Experiment Facility with Electromagnetic Launch. In this study, the liquid film dynamics and heat transfer characteristics of HFE-7100 spray, including liquid film morphology, wetted area, equivalent diameter, and velocity under different inlet pressures and heat fluxes, were quantitatively captured on smooth and rough silicon surfaces under microgravity. Several classic scenarios of liquid films, including spreading, bifurcating, bridging, fusiform, tadpole-shaped, and isolated liquid film, were recognized for the first time. The morphologies of the liquid films and the heat transfer performance under smooth and rough surfaces showed insignificant differences under normal and microgravity conditions. In addition, the dimensionless groups (Weber number and Reynolds number) were updated corresponding to approximately 92.4 % of the total We samples and approximately 96.4 % of the total Re samples ranging from 0.01 to 1 and 10 to 300, respectively, regardless of the different coolants (HFE-7100 and HFE-7000), pressures, nozzle-to-surface heights, heat fluxes, surface conditions, orientations, and gravities (1 g and µg).