Surface-conduction Electron-emitter Display Research Articles

Surface-conduction electron-emitter characteristics and fabrication based on vertically aligned carbon nanotube arrays

The carbon nanotube (CNT) has replaced palladium oxide (PdO) as the electrode material for surface-conduction electron-emitter (SCE) applications. Vertically aligned CNT arrays with a delta-star arrangement were patterned and synthesized onto a quartz substrate using photolithography and thermal chemical vapor deposition. Delta-star shaped VACNT arrays with 20° tips are used as cathodes that easily emit electrons because of their high electrical field gradient. In order to improve the field emission and secondary electrons (SEs) in SCE applications, magnesium oxide (MgO) nanostructures were coated onto the VACNT arrays to promote the surface-conduction electron-emitter display (SED) efficiency (η). According to the definition of η in SCE applications, in this study, the η was stably maintained in the 75–85% range. The proposed design provides a facile new method for developing SED applications.

W-Si-N Nan-Crystal as Electron Emitter Applied in SED

Abstract As the most potential next-generation display technology, SED(Surface-conduction Electron-emitter Display) whose independent electron emission character and good image quality draw much attention. Because of the higher emission efficiency than ZnO or PdO in the same craftwork, W-Si-N was selected as electron emitter material applied in SED. In this work, we developed SED with W-Si-N electron emitter film through magnetron sputtering and photoetching technology. We have found that W-Si-N thin film has high luminescent performance. WN and Si3N4 were found in W-Si-N film according to the results of XRD (X-Ray Diffraction) and XPS (X-ray photoelectron spectroscopy). Moreover, the obvious negative resistance effect based on the electron tunneling was observed in the nano-gap formulating process. Crystal boundary, defects, and impure particle affect electron emission efficiency. Besides, we have investigated the fabricating parameters, crystal structure and electron emitting characteristics and obtained the highest emission efficiency∼4.3%.

Microstructural and Electron-Emission Characteristics of Nb-Si-N Films in Surface-Conduction Electron-Emitter Display

Abstract We proposed ternary nitride Nb-Si-N film as a promising surface-conduction electron emitter (SCE) in surface-conduction electron-emitter display (SED). Nb-Si-N films consisted of continuous NbN polycrystalline phase with (Si3-xNb4x)N4 amorphous phase in NbN grain boundaries. After electroforming, serrated nanogaps were observed in Nb-Si-N SCE strips. The emission current of Nb-Si-N SCE array of 1×18 cells was 6.50 μA with anode voltage of 1.5 kV and device voltage of 22 V, indicating satisfying potential for display applications comparing with NbN SCEs. © 2009 Published by Elsevier B.V.

Improved electron emission characteristics of ZnO nano-gap with Pd films

The properties of the surface-conduction electron-emitter display (SED) are mainly decided by the surface-conduction electron emitters (SCEs). Pd is mostly used to fabricate the surface-conduction electron emitters, which are normally obtained by generating a nano-scale gap from PdO conductive film. ZnO is a potential material for electron emission and the research work has proved that ZnO film can act as the electron-emitter material. In this study, we propose to use the ZnO–Pd two-layer film as the conductive film. Both the multi-layer device electrode film and conductive film were deposited by a magnetron sputter, and SCEs are formed by the electro-forming process as used in SED. The results revealed that the Pd film on ZnO film surface increases the electron emission efficiency from 0.36‰ to 3.85‰.

Optimal Configuration of Hydrogen-Embrittlement-Fabricated Nanogaps for Surface-Conduction Electron-Emitter Display

Application of nanogaps for electron sources is fascinating in surface-conduction electron-emitter display. In contrast to rather complicated fabrication processes of the focused ion beam technique for the extremely narrow fissure, nanogaps fabricated by hydrogen embrittlement (HE) have thus been proposed as novel surface-conduction electron emitters due to their low turn-on voltage, high emission current, high focus capability, and high emission efficiency. In this paper, we theoretically investigate effects of the separation width and the tilted angle of the nanogaps fabricated by HE method on the field emission efficiency using a 3-D finite-difference time-domain particle-in-cell simulation technique. The structure with a large tilted angle may result in a high emitted current, but the collected current on the anode is suppressed due to the strong local field around the tip. A small structure prevents the emitted electrons from spreading out, and thus, no current could be collected by the anode. Also, the structure with a wide (or a narrow) separation of gap weakens (or enhances) the field around the tip and reduces the collected electrons. For better emission efficiency and focus capability, the separation width and the tilted angle of the examined structure could vary from 57 to 117 nm and 30deg to 60deg, respectively.

P‐98: A Novel Dynamic Resolution Improvement Method for Surface‐Conduction Electron‐Emitter Display

AbstractA novel dynamic resolution improvement method for surface‐conduction electron‐emitter display (SED) has been proposed in this paper. By alternating the polarity of control voltage, the landing positions of the emission electrons on the phosphor plate can be controlled. This helps to accomplish a double dynamic resolution on the conventional electron emission cell array.

Emission Efficiency Dependence on the Width and Thickness of Nanogaps in Surface-Conduction Electron-Emitter Displays

In this work, we explore the optimal size of nanogaps for the high field emission (FE) efficiency. In the FE process, the emission current is highly dependent upon both the material properties and the shape of the emitter. Thus, we first calibrate the theoretical model with the experimental data using the numerical simulation which is developed to evaluate the FE efficiency under different conditions. A three-dimensional finite-difference time-domain particle-in-cell method which approaches to self-consistent simulation of the electromagnetic fields and charged particles is adopted to simulate the electron emission in the surface-conduction electron-emitter display (SED) device. Examinations into conducting characteristics, FE efficiency, local electric fields around the emitter, and current density on the anode plate with one surface conduction electron-emitter (SCE) are conducted. It is found that the optimal width of nanogap in the SCE is about 80-90 nm and optimal thickness of the emitter is 30 nm to obtain the highest FE efficiency. This study benefits the advanced SED design for a new type of electron sources.

Surface Conduction Electron Emission from ZnO Film

The properties of the surface-conduction electron-emitter display (SED) are mainly decided by the surface-conduction electron emitters (SCE), which are normally made from the expensive metal Pd. In this study, we propose to use metal Zn instead of Pd as the emitter material. Both the device electrode and ZnO thin film are deposited by a sputter, and the electron emitters (SCE) are formed by the electro-forming process. The electron emission characteristic is obtained and the luminescence is observed.

Characteristics of an electron source of a surface‐conduction electron‐emitter display

Abstract— The electron source is an essential part of a surface‐conduction electron‐emitter display (SED). An electron source for an SED was obtained after certain procedures were performed. By introducing a carbon atmosphere, the electron‐emission characteristics of a SED were studied experimentally. The electron‐emission characteristic curves were drawn after comparing the experimental data of the electron source obtained in a vacuum environment with the data obtained in a carbon atmosphere, from which it had proved that a carbon atmosphere could significantly improve the electron‐emission characteristics of a SED. As a result, both the device current and the emission current had become stronger and the efficiency of surface‐conduction electron emission had been improved significantly. The possible reasons were analyzed: more carbon, which could possibly form the electron‐emission region of a SED, was produced from the carbon atmosphere during the electrical activation process.

Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays

We study the field emission (FE) property of a nanometer-scale gap structure in a palladium strip, which was fabricated by hydrogen absorption under high-pressure treatment. A vigorous cracking process could be accompanied by extensive atomic migration during the hydrogen treatment. A three-dimensional finite-difference time-domain particle-in-cell method is adopted to simulate the electron emission in a surface-conduction electron-emitter display (SED) device. Examinations of conducting characteristics, FE efficiency, the local field around the emitter, and the current density on the anode plate with one FE emitter are conducted. The image of a light spot is successfully produced on a phosphor plate, which implies that the explored electrode with nanometer separation possesses a potential SED application. Experimental observation and numerical simulation show that the proposed structure can be used as a surface conduction electron emitter and has a high FE efficiency with low turn-on voltage and a different electron emission mechanism. This study benefits the advanced SED design for a new type of electron source.

Experiment study of forming and activation of conductive film of the surface conduction electron emitter display

The forming and activation of the conductive films are studied experimentally. The power supply, a peak-to-peak 30 V triangle profile voltage, is applied to three kinds of conductive films that contain 0.25%, 0.5%, and 1% of palladium respectively. In the experiments we contrasted the values of related parameter in different conditions, observed the luminous spots on the anode panel, dealt with and analyzed the related data, and compared the positions and the amount of the luminous spots. We have gotten the conclusion that there is a threshold value U th. The emission current I e will increase rapidly when the device voltage U f is greater than U th. And the emission current I e could be controlled by the device voltage U f. The positions of the luminous spots on the anode panel are related with the device voltage U f.

Goodbye, CRT

With many developed countries going fully digital in the near future, the entire television landscape is expected to change dramatically in the next few years. Plasma and LCDs as well as several new technologies including the surface-conduction electron-emitter display (SED) are vying to replace the 100-year old CRT. After examining the advantages and disadvantages each of these new options, the paper predicts that LCD televisions will dominate by 2010

Electric field distribution in surface-conduction electron-emitter display

The surface-conduction electron-emitter display(SED) based on tunneling effect is a newly developed flat panel display. It has obvious technical advantages and excellent characteristics and is praised as one of the most advanced displays. Based on the theory of electromagnetism, an equivalent physical model of a single pixel of SED is established. In particular, it shows the exterior charge densities in different parts of the pixel. Furthermore, the electric potential and electric field intensity are studied in detail, and their distribution is simulated with the help of MATLAB 6.5 Software. Finally, a theoretical analysis of the simulated curved surface is given, and the electrical behavior as well as the emission mechanism is explained comprehensively. In order to further interpret the behavior of electrons in SED, we compare this model with the multi-scattering model and the inertial centrifugal force model respectively. It is found that within the limits of error our conclusion on electric field distribution is consistent with that of the inertial centrifugal force model.

Fabrication and characterization of surface‐conduction electron emitters for SED application

Abstract— A surface‐conduction electron emitter (SCE) for next‐generation flat‐panel displays has been developed. PdO thin films (approximately 10 nm thick) produced by an ink‐jet process were used to form the surface‐conduction electron emitter. The films were electroformed and activated while a voltage was applied, and an electron emitter with good characteristics was obtained. A current density of approximately 30 mA/cm2 was attained when an anode voltage of 10 kV was applied. Furthermore, a 36‐in. surface‐conduction electron‐emitter display (SED), consisting of SCEs and a phosphor screen similar to that of a CRT, was also developed.

71.2: Fabrication and Characterization of Surface Conduction Electron Emitters

We have developed a surface conduction electron emitter (SCE) for next-generation flat displays. PdO thin films (approximately 10 nm) produced by the ink-jet process were used for forming the surface conduction electron emitter. The films were electroformed and activated while a certain voltage was applied, and an electron emitter with good characteristics was obtained. A current density of approximately 30 mA/cm2 was attained when an anode voltage of 10 kV was applied. We confirmed operation for 60,000 hours by an acceleration test at a current density of 3 mA/cm2. This current density is required for “good brightness” on the surface conduction electron emitter display (SED).

71.1: Invited Paper: A 36-inch Surface-conduction Electron-emitter Display (SED)

We have developed a 36-inch surface-conduction electron-emitter display (SED), consisting of surface conduction electron emitters (SCEs) and a phosphor screen for CRTs. The main features of the prototype are luminance of 400 cd/m2, contrast ratio of 10,000: 1 in a dark room, and response time of < 1 ms. The SED panel offers sufficient performance for application to TVs.

Canon and Toshiba go their own way in flat panels

The article presents the alliance between the Canon Inc. and Toshiba Corp., both in Tokyo. The alliance was formed to meet the soaring demand of the consumers on large flat-panel screens. They intend to produce and market large flat-panel screens for TVs based on surface-conduction electron-emitter display (SED) technology. This technology is newcomer to the big-screen wars, which have been dominated by liquid-crystal displays (LCD), follower by plasma displays, and projection TVs using cathode ray tube (CRT). This article also presents the advantages of SED technology over LCDs, CRTs and plasma displays.