Lateral Goos-Hänchen (GH) shifts at the Fano resonances are theoretically investigated in superconducting photonic crystals. The photonic system consists of superconductor layer pairs with embedded graphene and a dielectric layer. With an oblique incident light, multiple Fano resonances are realized in the transmission spectrum because of the embedded graphene. Large GH shifts of the reflected light, including positive (Δp) and negative (Δn) GH shifts, are obtained around the Fano resonances. The GH shifts almost keep stable for different chemical potentials of graphene. By decreasing hydrostatic pressure or incident angle, larger Δp and |Δn| are achieved and the corresponding frequency has a redshift. By increasing the ambient temperature, Δp and |Δn| first increase smoothly and then decrease sharply. Overall, Δp is more sensitive than Δn, while the reflectance corresponding to Δn is much larger than that corresponding to Δp. Large and tunable GH shifts in our study may have great potential for optical detectors and transducers.
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