Sub-bandgap Voltage Reference Research Articles

A 0.7 V 5 nW CMOS sub-bandgap voltage reference without resistors

A 0.7 V 5 nW CMOS Sub-Bandgap voltage reference circuit without resistors is presented. The proposed circuits use a new complementary-to-absolute-temperature voltage generator to reduce the power consumption and area. The circuit consists of one single BJT and sub-threshold transistors. The sub-Bandgap voltage reference is implemented in a 0.18-µm CMOS process. Measured results show that the reference can run with 0.7 V supply voltage, while the power consumption is only 5 nW at room temperature, the area is 0.026 mm2 and the PSRR of better than − 48 dB over the full frequency range is achieved. The average temperature coefficient is 49 ppm/°C with a temperature range of − 40 to 125 °C. Also the line sensitivity is 0.02%/V.

A 68-nW novel CMOS sub-bandgap voltage reference circuit

This paper proposes a CMOS sub-bandgap reference (sub-BGR) circuit without resistors for ultra-low power applications. The BGR core circuit consists of a vertical PNP bipolar transistor, a temperature-compensation amplifier and a Proportional to Absolute Temperature (PTAT) voltage generator. The PTAT voltage generator consists of four p-type transistors and generates a positive temperature dependent voltage, which compensates for the negative temperature dependent base-emitter voltage in a PNP bipolar transistor. The circuit generates a sub-bandgap voltage of silicon. The sub-BGR is fabricated with 65-nm standard CMOS process with an area of 400 μm × 80 μm. Experimental results demonstrate that this sub-BGR circuit can generate a 202.8 mV reference voltage with a power consumption of 68 nW.

A 0.9-V 33.7-ppm/°C 85-nW Sub-Bandgap Voltage Reference Consisting of Subthreshold MOSFETs and Single BJT

A low temperature coefficient (TC) and high power supply ripple rejection (PSRR) CMOS sub-bandgap voltage reference (sub-BGR) circuit using subthreshold MOS transistors and a single BJT is presented in this brief. The proposed sub-BGR consists of a novel complementary-to-absolute-temperature (CTAT) voltage generator based on a scaled emitter-base voltage of a BJT, and an improved proportional-to-absolute-temperature (PTAT) voltage generator based on stacking of $\Delta V_{\mathbf {GS}}$ of sub- $V_{\mathbf {TH}}$ MOSFETs. As the CTAT circuit achieves a reduced absolute value of the negative TC, the PTAT circuit achieves reduced power consumption without consuming a large chip area. The proposed sub-BGR circuit is implemented in a standard 0.18- $\mu \text{m}$ CMOS process. Measured results show that the sub-BGR circuit can run with a supply voltage down to 0.9 V while the power consumption is only 85 nW. An average TC of 33.7 ppm/°C and a PSRR of better than −40 dB over the full frequency range are achieved.

0.75 V supply nanowatt resistorless sub-bandgap curvature-compensated CMOS voltage reference

This work presents a resistorless self-biased and small area sub-bandgap voltage reference that works in the nano-ampere consumption range with 0.75 V of power supply. The circuit applies a curvatu...

Sub-1 V supply 5 nW 11 ppm/°C resistorless sub-bandgap voltage reference

In this work a resistorless sub-bandgap voltage reference topology is presented. It is a self-biased and small area circuit that works in the nano-ampere consumption range, and under 1 V of power s...

A 150-nA 13.4-ppm/°C switched-capacitor CMOS sub-bandgap voltage reference

A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 0.35-μm 3.3-V/5-V dual gate mixed-signal CMOS process. The proposed circuit generates a precise sub-bandgap voltage of 1 V. The temperature coefficient of the output voltage is 13.4 ppm/°C with the temperature varying from −20 to 80 °C. The proposed circuit operates properly with the supply voltage down to 1.3 V, and consumes 150 nA at room temperature. The line regulation is 0.27%/V. The power supply rejection ratio at 100 Hz and 1 MHz is −39 dB and −51 dB, respectively. The chip area is 0.2 mm2.