Structure Of Aluminum Oxide Films Research Articles

Facile Preparation of Hydrophobic Aluminum Oxide Film via Sol-Gel Method.

Hydrophobic aluminum oxide films (AOFs) are widely used in anti-oxidation and anti-corrosion applications. In preparing AOFs, complex and high temperature conditions are usually necessary. Here, we report aluminum nanowire structures with hydrophobic properties, prepared using a facile sol-gel method by magnetic stirrer and hydrothermal reaction. The electromagnetic force work has great influence on the structure of AOFs. The surface morphology and compositions of the AOFs were analyzed by scanning electron microscope (SEM), energy dispersive X-ray spec-trometers (EDS), X-ray diffraction (XRD), 3M peeling test, and X-ray photoelectron spectroscopy (XPS). With the increase of water content in hydrothermal reaction, the hydrophobicity of AOFs proportional increased. Adding 10 ml deionized water leads to the formation of the upper nanowires and the lower nanohole with 129.3° water contact angle. Meanwhile, the AOF provide a good substrate for electroless deposition (ELD) of copper (Cu) to achieve a simple fabrication of metal conductor.

アルミニウム表面の酸化皮膜構造とガス放出特性

Relation between structure of aluminum oxide films on 6063 alloy and their gas desorption property was studied. 6063 alloy etched in alkali solution shows outgassing rates 4.2×10-9torr•l/s•cm2 at 10h after initial evacuation at room temperature and 1.0×10-12torr•l/s•cm2 at 10h after baking at 100°C for 24h. The alloy etched in alkali solution, dried in vacuum and heated in Ar+O2 mixture gas shows outgassing rates 3.2×10-10torr•l/s•cm2 at 10h after initial evacuation at room temperature and 3.9×10-12torr•l/s•cm2 at 10h after baking at 100°C for 24h. The alloy extruded in Ar+O2 mixture gas shows the same outgassing rates. Porous hydrated oxide films are formed on the alloy etched in alkali solution and stored in air. The formation of hydrated oxide films during storage in air is controlled by heating in vacuum and in the Ar+O2 mixture gas after alkali etching. Hydrated oxide films affect outgassing rates.