Staggered Double Vane Slow Wave Structure Research Articles

Design and Analysis of a Wideband Staggered Double-Vane Slow-Wave Structure for W-Band Amplifier

This article presents the design and analysis of a staggered double-vane (SDV) slow-wave structure (SWS) for $W$ -band amplifier, with 20-dB gain and a very high bandwidth (~25%). The use of dual Bragg reflector at either end of the interaction structure increases the impedance matching and the radio frequency (RF) coupling efficiency at the input and output ports, thereby reducing the RF leakage at the electron gun and collector ends, from 15% to 25% to less than 0.6%. The attenuator section is simple to fabricate and optimally designed in order to provide an effective isolation (>20 dB) between the input RF signal in the input section and the RF signal reflected from the output section. The dispersion analysis, the transmission analysis of each section, and the beam–wave interactions were simulated using the Dassault system’s computer simulation technology (CST) eigenmode solver, time-domain solver, and the particle-in-cell (PIC) solver, respectively. The proposed design of the SDV SWS conclusively provides an enormous bandwidth of ~25 GHz with 20-dB gain for $W$ -band amplifier, when compared to its solid-state counterparts and earlier reported work as per the author’s knowledge.

Multiple-beam and double-mode staggered double vane travelling wave tube with ultra-wide band

This paper presents design, fabrication and cold test of an ultra-wide band travelling wave tube (TWT) with planar alignment multiple pencil beams. The fundamental double-mode of staggered double vane slow wave structure (SDV-SWS) rather than the only one mode are put forward and adopted to match with the same electron beam to increase the bandwidth greatly. Simultaneous planar alignment multiple pencil beam tunnels are designed to improve interaction impedance and then to enhance output power, gain, efficiency, growth rate. The transmission performance of a two-stage 51-period SDV-TWT in G-band with structure attenuator between two sections shows that it indeed has an ultra-wideband performance from 81 to 110 GHz. By using computer numerical control machining, the SDV-SWS was manufactured and a detailed cold test was conducted. Good agreement is found at the wide band, where S21 is above − 5 dB and S11 is below − 10 dB. 3D PIC simulations with double-mode multiple-beam SDV-TWT within total length of 70 mm show that it can get a nearly 2120 W peak output power, a 42.5 dB corresponding gain and a 10.7% electron efficiency at 94 GHz with a 22.1 kV beam voltage and a 3 × 0.15A beam current. The 3 dB bandwidth of our double-mode SDV-TWT can achieve about 29 GHz.