TiO2 is a material used in various fields such as electronics, optics, environment, etc. For the application to electronic and optical devices, TiO2 needs to be patterned using reactive ion etching using halogen-based gases. In this study, a TiO2 masked with ACL pillar pattern was etched using two types of gases namely C4F8-based (C4F8/SF6/Ar) and BCl3-based (BCl3/CF4/Ar), and the effect of etch gas and asynchronous pulsing (separated source power ON time and bias power ON time in a pulse period) on the etch properties such as the etch rates, etch selectivity, and aspect ratio dependent etching (ARDE) were investigated. The use of asynchronous pulsing with decreased bias pulsing ratio (high source power ON time and low bias ON time in a pulse period) improved the etch selectivity and ARDE possibly due to the lower sputter etching time after the removal of reacted species on the TiO2 surface and due to the more similar etch environment for different aspect ratio TiO2 features, respectively. The use of BCl3-based plasma showed higher etch selectivity over ACL compared to C4F8-based plasma, however, it showed the lower etch rate and more severe ARDE due to the stickiness of Cl compared to F to the sidewall during the etching of high aspect ratio TiO2.